The document discusses electrical and photoelectrical properties of tin selenide (SnSe) thin films deposited through vacuum deposition. Thin films of polycrystalline semiconducting SnSe were grown on glass substrates at 150°C using bulk SnSe prepared from elemental powders. The films were characterized through X-ray diffraction and annealing improved crystallinity. Optical measurements found the films had a direct band gap of 1.26 eV. Electrical conductivity increased with temperature and photoconductivity tests indicated deep localized gap states.
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Literatura Postcolonial
Original Title
Magical Realism in West African Fiction Seeing With a Third Eye (Routledge Research in Postcolonial Literatures, 1)
The document discusses electrical and photoelectrical properties of tin selenide (SnSe) thin films deposited through vacuum deposition. Thin films of polycrystalline semiconducting SnSe were grown on glass substrates at 150°C using bulk SnSe prepared from elemental powders. The films were characterized through X-ray diffraction and annealing improved crystallinity. Optical measurements found the films had a direct band gap of 1.26 eV. Electrical conductivity increased with temperature and photoconductivity tests indicated deep localized gap states.
The document discusses electrical and photoelectrical properties of tin selenide (SnSe) thin films deposited through vacuum deposition. Thin films of polycrystalline semiconducting SnSe were grown on glass substrates at 150°C using bulk SnSe prepared from elemental powders. The films were characterized through X-ray diffraction and annealing improved crystallinity. Optical measurements found the films had a direct band gap of 1.26 eV. Electrical conductivity increased with temperature and photoconductivity tests indicated deep localized gap states.
2001 electric properties, superconductors, semiconductors
electric properties, superconductors, semiconductors
D 8000 Electrical and Photoelectrical Properties of Vacuum Deposited SnSe 03 - 011 Thin Films. 4Bulk SnSe is prepared from powders of the elements (sealed quartz ampoule, 10 Pa, 900 C, 10 h). Polycrystalline semiconducting thin films of SnSe are grown on glass substrates by vacuum deposition at 150 C using the prepared bulk material. The films are characterized by XRD. Annealing the films at 300 C for 2 h improves their crystallinity. Optical transmission measurement reveals a direct allowed band gap of the films of 1.26 eV. Their electrical conductivity increases with increasing temperature. Photoconductivity measurements indicates the presence of continuously distributed deep localized gap states. (PADIYAN, D. PATHINETTAM; MARIKANI, A.; MURALI, K. R.; Cryst. Res. Technol. 35 (2000) 8, 949-957; Dep. Phys., Manonmaniam Sundaranar Univ., Tirunelveli 627 012, India; EN)