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2001 electric properties, superconductors, semiconductors

electric properties, superconductors, semiconductors


D 8000 Electrical and Photoelectrical Properties of Vacuum Deposited SnSe
03 - 011 Thin Films. 4Bulk SnSe is prepared from powders of the elements (sealed
quartz ampoule, 10 Pa, 900 C, 10 h). Polycrystalline semiconducting thin
films of SnSe are grown on glass substrates by vacuum deposition at 150 C using
the prepared bulk material. The films are characterized by XRD. Annealing
the films at 300 C for 2 h improves their crystallinity. Optical transmission
measurement reveals a direct allowed band gap of the films of 1.26 eV. Their
electrical conductivity increases with increasing temperature. Photoconductivity
measurements indicates the presence of continuously distributed deep localized
gap states. (PADIYAN, D. PATHINETTAM; MARIKANI, A.; MURALI,
K. R.; Cryst. Res. Technol. 35 (2000) 8, 949-957; Dep. Phys., Manonmaniam
Sundaranar Univ., Tirunelveli 627 012, India; EN)

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