2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier

October 2011

2N3904 / MMBT3904 / PZT3904

NPN General Purpose Amplifier
Features
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

2N3904 MMBT3904 PZT3904

C
C

E
E
C
TO-92 SOT-23 B SOT-223 B
Mark:1A
EBC

Absolute Maximum Ratings* Ta = 25C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.

Thermal Characteristics Ta = 25C unless otherwise noted

Max.
Symbol Parameter Units
2N3904 *MMBT3904 **PZT3904
Total Device Dissipation 625 350 1,000 mW
PD
Derate above 25C 5.0 2.8 8.0 mW/C
RJC Thermal Resistance, Junction to Case 83.3 C/W
RJA Thermal Resistance, Junction to Ambient 200 357 125 C/W
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

2N3904 / MMBT3904 / PZT3904 Rev. B0 1
 2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier
Electrical Characteristics Ta = 25C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10A, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10A, IC = 0 6.0 V
IBL Base Cutoff Current VCE = 30V, VEB = 3V 50 nA
ICEX Collector Cutoff Current VCE = 30V, VEB = 3V 50 nA
ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.1mA, VCE = 1.0V 40
IC = 1.0mA, VCE = 1.0V 70
IC = 10mA, VCE = 1.0V 100 300
IC = 50mA, VCE = 1.0V 60
IC = 100mA, VCE = 1.0V 30
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 0.2 V
IC = 50mA, IB = 5.0mA 0.3 V
VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 0.65 0.85 V
IC = 50mA, IB = 5.0mA 0.95 V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product IC = 10mA, VCE = 20V, 300 MHz
f = 100MHz
Cobo Output Capacitance VCB = 5.0V, IE = 0, 4.0 pF
f = 1.0MHz
Cibo Input Capacitance VEB = 0.5V, IC = 0, 8.0 pF
f = 1.0MHz
NF Noise Figure IC = 100A, VCE = 5.0V, 5.0 dB
RS = 1.0k,
f = 10Hz to 15.7kHz
SWITCHING CHARACTERISTICS
td Delay Time VCC = 3.0V, VBE = 0.5V 35 ns
tr Rise Time IC = 10mA, IB1 = 1.0mA 35 ns
ts Storage Time VCC = 3.0V, IC = 10mA, 200 ns
tf Fall Time IB1 = IB2 = 1.0mA 50 ns
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%

Ordering Information
Part Number Marking Package Packing Method Pack Qty
2N3904BU 2N3904 TO-92 BULK 10000
2N3904TA 2N3904 TO-92 AMMO 2000
2N3904TAR 2N3904 TO-92 AMMO 2000
2N3904TF 2N3904 TO-92 TAPE REEL 2000
2N3904TFR 2N3904 TO-92 TAPE REEL 2000
MMBT3904 1A SOT-23 TAPE REEL 3000
MMBT3904_D87Z 1A SOT-23 TAPE REEL 10000
PZT3904 3904 SOT-223 TAPE REEL 2500

2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

2N3904 / MMBT3904 / PZT3904 Rev. B0 2
 2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier
Typical Performance Characteristics

Typical Pulsed Current Gain Collector-Emitter Saturation

VCESAT- COLLECTOR-EMITTER VOLTAGE (V)

vs Collector Current Voltage vs Collector Current
h FE - TYP ICAL PULSED CURRE NT GAIN

500
V CE = 5V
400
0.15 = 10

125 C 125 C
300
25 C 0.1

200 25 C

- 40 C 0.05
100
- 40 C
0
0.1 1 10 100 0.1 1 10 100
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Base-Emitter Saturation Base-Emitter ON Voltage vs

Voltage vs Collector Current Collector Current
VBE(ON)- BASE-EMITTER ON VOLTAGE (V)
VBESAT- BASE-EMITTER VOLTAGE (V)

1
1 = 10 VCE = 5V

0.8 - 40 C
0.8 - 40 C 25 C

25 C 0.6
0.6 125 C

125 C 0.4

0.4
0.2
0.1 1 10 100 0.1 1 10 100
IC - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Collector-Cutoff Current Capacitance vs

vs Ambient Temperature Reverse Bias Voltage
10
ICBO- COLLECTOR CURRENT (nA)

500
f = 1.0 MHz
100 VCB = 30V
CAPACITANCE (pF)

5
10 4
C ibo
3
1
2
0.1 C obo

1
25 50 75 100 125 150 0.1 1 10 100
TA - AMBIENT TEMPERATURE ( C) REVERSE BIAS VOLTAGE (V)

2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

2N3904 / MMBT3904 / PZT3904 Rev. B0 3
 2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier
Typical Performance Characteristics (continued)

Noise Figure vs Frequency Noise Figure vs Source Resistance

12 12
I C = 1.0 mA V CE = 5.0V I C = 1.0 mA
R S = 200
NF - NOISE FIGURE (dB)

NF - NOISE FIGURE (dB)

10 10
A
I C = 50 A I C = 5.0 mA
8 k
R S = 1.0 k 8 A
I C = 50 A
I C = 0.5 mA
6 R S = 200 6

4 4 A
I C = 100 A

2 2
I C = 100 A
A, R S = 500

0 0
0.1 1 10 100 0.1 1 10 100
f - FREQUENCY (kHz) k) )
R S - SOURCE RESISTANCE ((k

Current Gain and Phase Angle Power Dissipation vs

vs Frequency Ambient Temperature
50 0 1
- CURRENT GAIN (dB)

PD - POWER DISSIPATION (W)

45 h fe 20
40 40 SOT-223
- DEGREES

0.75
35 60 TO-92
30 80
25 100 0.5
20 120
SOT-23
15 140
V CE = 40V 160
10 0.25
fe

5 I C = 10 mA 180
h

0
1 10 100 1000 0
f - FREQUENCY (MHz) 0 25 50 75 100 125 150
TEMPERATURE (o C)

Turn-On Time vs Collector Current Rise Time vs Collector Current

500 500
Ic Ic
I B1 = I B2 = VCC = 40V I B1 = I B2 =
10 10
40V
t r - RISE TIME (ns)

100 15V 100

TIME (nS)

T J = 25C
t r @ V CC = 3.0V
T J = 125C

2.0V

10 10
t d @ VCB = 0V
5 5
1 10 100 1 10 100
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

2N3904 / MMBT3904 / PZT3904 Rev. B0 4
 2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier
Typical Performance Characteristics (continued)

Storage Time vs Collector Current Fall Time vs Collector Current

500 500
Ic Ic
I B1 = I B2 = I B1 = I B2 =
10 10
t S - STORAGE TIME (ns)

T J = 25C
T J = 125C VCC = 40V

t f - FALL TIME (ns)

100 100
T J = 125C
T J = 25C

10 10

5 5
1 10 100 1 10 100
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Current Gain Output Admittance

500 100
mhos)

V CE = 10 V V CE = 10 V
h oe - OUTPUT ADMITTANCE ( nhos

f = 1.0 kHz f = 1.0 kHz

T A = 25oC T A = 25oC
h fe - CURRENT GAIN

100
10

10 1
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Input Impedance Voltage Feedback Ratio

)
_4

100 10
V CE = 10 V
h re - VOLTAGE FEEDBACK RATIO (x10

V CE = 10 V
(k)

f = 1.0 kHz
)

f = 1.0 kHz
T A = 25oC 7 T A = 25oC
h ie - INPUT IMPEDANCE (k

10 5
4

1
2

0.1 1
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

2N3904 / MMBT3904 / PZT3904 Rev. B0 5
 2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier
Test Circuits

3.0 V

300ns
300 ns 275
10.6 V

Duty Cycle == 2%

k
10 K
0
- 0.5 V C1 << 4.0pF
4.0 pF

<< 1.0ns
1.0 ns

FIGURE 1: Delay and Rise Time Equivalent Test Circuit

3.0 V

10 <<t1 t<1 <

10 s s
500500 t1
10.9 V
275

Duty Cycle == 2%

0
k
10 K

< 4.0pF
C1 < 4.0 pF

- 9.1 V 1N916

<< 1.0ns
1.0 ns

FIGURE 2: Storage and Fall Time Equivalent Test Circuit

2011 Fairchild Semiconductor Corporation www.fairchildsemi.com

2N3904 / MMBT3904 / PZT3904 Rev. B0 6
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Rev. I57

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