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IKZ50N65ES5

TRENCHSTOPTM5softswitchingIGBT

TRENCHSTOPTM5highspeedsoftswitchingIGBTcopackedwithfullcurrent
ratedRAPID1fastandsoftantiparalleldiode

FeaturesandBenefits:

HighspeedS5technologyoffering
Highspeedsmoothswitchingdeviceforhard&softswitching
VeryLowVCEsat,1.42Vatnominalcurrent
PlugandplayreplacementofpreviousgenerationIGBTs
650Vbreakdownvoltage
LowgatechargeQG
IGBTcopackedwithfullratedRAPID1fastantiparalleldiode
Maximumjunctiontemperature175C
QualifiedaccordingtoJEDECfortargetapplications
Pb-freeleadplating;RoHScompliant
CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:

IndustrialUPS
IndustrialSMPS
EnergyStorage
Charger
Welding

ProductValidation:

Qualifiedforapplicationslistedabovebasedonthetest
conditionsintherelevanttestsofJEDEC20/22

Packagepindefinition:

PinC&backside-collector
PinE-emitter
PinK-Kelvinemitter
PinG-gate

Pleasenote:TheemitterandKelvinemitterpinsarenot
exchangeable.Theirexchangemightleadtomalfunction.

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25C Tvjmax Marking Package
IKZ50N65ES5 650V 50A 1.35V 175C K50EES5 PG-TO247-4

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1


www.infineon.com 2017-04-26
IKZ50N65ES5

TRENCHSTOPTM5softswitchingIGBT

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet 2 V2.1
2017-04-26
IKZ50N65ES5

TRENCHSTOPTM5softswitchingIGBT

MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value Unit


Collector-emittervoltage,Tvj25C VCE 650 V
1)
DCcollectorcurrent,limitedbyT vjmax
TC=25Cvaluelimitedbybondwire IC 80.0 A
TC=100C 60.5
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 200.0 A
Turn off safe operating area
- 200.0 A
VCE650V,Tvj175C,tp=1s
Diodeforwardcurrent,limitedbyTvjmax1)
TC=25Cvaluelimitedbybondwire IF 80.0 A
TC=100C 60.5
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 200.0 A
Gate-emitter voltage 20
VGE V
TransientGate-emittervoltage(tp10s,D<0.010) 30
PowerdissipationTC=25C 274.0
Ptot W
PowerdissipationTC=100C 137.0
Operating junction temperature Tvj -40...+175 C
Storage temperature Tstg -55...+150 C
Soldering temperature,
C
wave soldering 1.6mm (0.063in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Value
Parameter Symbol Conditions Unit
min. typ. max.
RthCharacteristics
IGBT thermal resistance,
Rth(j-C) - - 0.55 K/W
junction - case
Diode thermal resistance,
Rth(j-C) - - 0.63 K/W
junction - case
Thermal resistance
Rth(j-a) - - 40 K/W
junction - ambient

1)
value limited by bondwire
Datasheet 3 V2.1
2017-04-26
IKZ50N65ES5

TRENCHSTOPTM5softswitchingIGBT

ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V
VGE=15.0V,IC=50.0A
Tvj=25C - 1.35 1.70
Collector-emitter saturation voltage VCEsat V
Tvj=125C - 1.50 -
Tvj=175C - 1.60 -
VGE=0V,IF=50.0A
Tvj=25C - 1.45 1.70
Diode forward voltage VF V
Tvj=125C - 1.42 -
Tvj=175C - 1.39 -
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 V
VCE=650V,VGE=0V
Zero gate voltage collector current ICES Tvj=25C - - 50 A
Tvj=175C - 2000 -
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S

ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 3100 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 88 - pF
Reverse transfer capacitance Cres - 12 -
VCC=520V,IC=50.0A,
Gate charge QG - 120.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25C
Turn-on delay time td(on) Tvj=25C, - 36 - ns
Rise time tr VCC=400V,IC=50.0A, - 22 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=23.1,RG(off)=23.1, - 294 - ns
Fall time tf L=30nH,C=30pF - 32 - ns
L,CfromFig.E
Turn-on energy Eon Energy losses include tail and - 0.77 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.88 - mJ
Total switching energy Ets - 1.65 - mJ

Datasheet 4 V2.1
2017-04-26
IKZ50N65ES5

TRENCHSTOPTM5softswitchingIGBT

Turn-on delay time td(on) Tvj=25C, - 33 - ns


Rise time tr VCC=400V,IC=25.0A, - 14 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=23.1,RG(off)=23.1, - 304 - ns
Fall time tf L=30nH,C=30pF - 33 - ns
L,CfromFig.E
Turn-on energy Eon Energy losses include tail and - 0.36 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.32 - mJ
Total switching energy Ets - 0.68 - mJ

DiodeCharacteristic,atTvj=25C
Diode reverse recovery time trr Tvj=25C, - 62 - ns
Diode reverse recovery charge Qrr VR=400V, - 1.40 - C
IF=50.0A,
Diode peak reverse recovery current Irrm diF/dt=2500A/s - 40.0 - A
Diode peak rate of fall of reverse
dirr/dt - -1100 - A/s
recoverycurrentduringtb

Diode reverse recovery time trr Tvj=25C, - 44 - ns


Diode reverse recovery charge Qrr VR=400V, - 1.00 - C
IF=25.0A,
Diode peak reverse recovery current Irrm diF/dt=2500A/s - 38.5 - A
Diode peak rate of fall of reverse
dirr/dt - -2200 - A/s
recoverycurrentduringtb

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=150C
Turn-on delay time td(on) Tvj=150C, - 34 - ns
Rise time tr VCC=400V,IC=50.0A, - 26 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=23.1,RG(off)=23.1, - 328 - ns
Fall time tf L=30nH,C=30pF - 38 - ns
L,CfromFig.E
Turn-on energy Eon Energy losses include tail and - 1.00 - mJ
Turn-off energy Eoff diode reverse recovery. - 1.20 - mJ
Total switching energy Ets - 2.20 - mJ

Turn-on delay time td(on) Tvj=150C, - 32 - ns


Rise time tr VCC=400V,IC=25.0A, - 16 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=23.1,RG(off)=23.1, - 354 - ns
Fall time tf L=30nH,C=30pF - 44 - ns
L,CfromFig.E
Turn-on energy Eon Energy losses include tail and - 0.64 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.56 - mJ
Total switching energy Ets - 1.20 - mJ

Datasheet 5 V2.1
2017-04-26
IKZ50N65ES5

TRENCHSTOPTM5softswitchingIGBT

DiodeCharacteristic,atTvj=150C
Diode reverse recovery time trr Tvj=150C, - 92 - ns
Diode reverse recovery charge Qrr VR=400V, - 3.20 - C
IF=50.0A,
Diode peak reverse recovery current Irrm diF/dt=2500A/s - 63.0 - A
Diode peak rate of fall of reverse
dirr/dt - -1100 - A/s
recoverycurrentduringtb

Diode reverse recovery time trr Tvj=150C, - 68 - ns


Diode reverse recovery charge Qrr VR=400V, - 2.30 - C
IF=25.0A,
Diode peak reverse recovery current Irrm diF/dt=2500A/s - 59.0 - A
Diode peak rate of fall of reverse
dirr/dt - -1850 - A/s
recoverycurrentduringtb

Datasheet 6 V2.1
2017-04-26
IKZ50N65ES5

TRENCHSTOPTM5softswitchingIGBT

275 90

250
80

225
70
200

IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]

60
175

150 50

125 40

100
30
75
20
50

10
25

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[C] TC,CASETEMPERATURE[C]
Figure 1. Powerdissipationasafunctionofcase Figure 2. Collectorcurrentasafunctionofcase
temperature temperature
(Tvj175C) (VGE15V,Tvj175C)

150 150
VGE = 20V VGE = 20V

135 18V 135 18V

15V 15V
120 120
12V 12V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]

105 105
10V 10V

90 8V 90 8V

7V 7V
75 75
6V 6V

60 5V 60 5V

45 45

30 30

15 15

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Typicaloutputcharacteristic Figure 4. Typicaloutputcharacteristic
(Tvj=25C) (Tvj=175C)

Datasheet 7 V2.1
2017-04-26
IKZ50N65ES5

TRENCHSTOPTM5softswitchingIGBT

150 3.0
Tvj = 25C IC = 25A
Tvj = 150C IC = 50A
135 IC = 100A

VCEsat,COLLECTOR-EMITTERSATURATION[V]
2.5
120
IC,COLLECTORCURRENT[A]

105
2.0

90

75 1.5

60

1.0
45

30
0.5

15

0 0.0
2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tvj,JUNCTIONTEMPERATURE[C]
Figure 5. Typicaltransfercharacteristic Figure 6. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)

1000 1000
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]

100 100

10 10

td(off)
tf
td(on)
tr

1 1
0 30 60 90 120 150 0 10 20 30 40 50 60
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[]
Figure 7. Typicalswitchingtimesasafunctionof Figure 8. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistance
(inductiveload,Tvj=150C,VCE=400V, (inductiveload,Tvj=150C,VCE=400V,
VGE=0/15V,RGon=23,1,RGoff=23,1, VGE=0/15V,IC=75A,dynamictestcircuitin
dynamic test circuit in Figure E) Figure E)
Datasheet 8 V2.1
2017-04-26
IKZ50N65ES5

TRENCHSTOPTM5softswitchingIGBT

1000 6
typ.
min.

VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
max.
5
t,SWITCHINGTIMES[ns]

100 4

10 2

td(off) 1
tf
td(on)
tr

1 0
25 50 75 100 125 150 175 25 50 75 100 125 150
Tvj,JUNCTIONTEMPERATURE[C] Tvj,JUNCTIONTEMPERATURE[C]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V, (IC=0.5mA)
IC=75A,RGon=23,1,RGoff=23,1,dynamic
test circuit in Figure E)

9 5
Eoff Eoff
Eon Eon
8 Ets Ets

4
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

3
5

4
2

2
1

0 0
0 30 60 90 120 150 0 10 20 30 40 50
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[]
Figure 11. Typicalswitchingenergylossesasa Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistance
(inductiveload,Tvj=150C,VCE=400V, (inductiveload,Tvj=150C,VCE=400V,
VGE=0/15V,RGon=23,1,RGoff=23,1, VGE=0/15V,IC=75A,dynamictestcircuitin
dynamic test circuit in Figure E) Figure E)
Datasheet 9 V2.1
2017-04-26
IKZ50N65ES5

TRENCHSTOPTM5softswitchingIGBT

3.0 3.0
Eoff Eoff
Eon Eon
Ets Ets
2.5 2.5
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
2.0 2.0

1.5 1.5

1.0 1.0

0.5 0.5

0.0 0.0
25 50 75 100 125 150 175 200 250 300 350 400 450 500
Tvj,JUNCTIONTEMPERATURE[C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(inductiveload,VCE=400V,VGE=0/15V, (inductiveload,Tvj=150C,VGE=0/15V,
IC=75A,RGon=23,1,RGoff=23,1,dynamic IC=75A,RGon=23,1,RGoff=23,1,dynamic
test circuit in Figure E) test circuit in Figure E)

16 1E+4
VCC=130V
VCC=520V
14
VGE,GATE-EMITTERVOLTAGE[V]

12 1000
C,CAPACITANCE[pF]

10

8 100

4 10

Cies
2 Coes
Cres

0 1
0 20 40 60 80 100 120 0 5 10 15 20 25 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalgatecharge Figure 16. Typicalcapacitanceasafunctionof
(IC=75A) collector-emittervoltage
(VGE=0V,f=1MHz)

Datasheet 10 V2.1
2017-04-26
IKZ50N65ES5

TRENCHSTOPTM5softswitchingIGBT

1 1
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]

Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
D = 0.5 D = 0.5
0.1 0.1
0.2 0.2
0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
single pulse single pulse
0.01 0.01

i: 1 2 3 4 5 i: 1 2 3 4
ri[K/W]: 0.030556 0.137971 0.162007 0.15972 0.059746 ri[K/W]: 0.066623 0.198269 0.201696 0.163411
i[s]: 2.4E-5 3.1E-4 3.1E-3 0.024936 0.134448 i[s]: 2.1E-5 3.7E-4 5.5E-3 0.057467

0.001 0.001
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 17. IGBTtransientthermalimpedance Figure 18. Diodetransientthermalimpedanceasa
(D=tp/T) functionofpulsewidth
(D=tp/T)

120 4.5
Tvj = 25C, IF = 50A Tvj = 25C, IF = 50A
Tvj = 150C, IF = 50A Tvj = 150C, IF = 50A
110 4.0
Qrr,REVERSERECOVERYCHARGE[C]

100
3.5
trr,REVERSERECOVERYTIME[ns]

90
3.0

80
2.5
70
2.0
60

1.5
50

1.0
40

30 0.5

20 0.0
2000 2500 3000 3500 4000 4500 5000 5500 2000 2500 3000 3500 4000 4500 5000 5500
diF/dt,DIODECURRENTSLOPE[A/s] diF/dt,DIODECURRENTSLOPE[A/s]
Figure 19. Typicalreverserecoverytimeasafunction Figure 20. Typicalreverserecoverychargeasa
ofdiodecurrentslope functionofdiodecurrentslope
(VR=400V) (VR=400V)

Datasheet 11 V2.1
2017-04-26
IKZ50N65ES5

TRENCHSTOPTM5softswitchingIGBT

110 0
Tvj = 25C, IF = 50A Tvj = 25C, IF = 50A
Tvj = 150C, IF = 50A Tvj = 150C, IF = 50A
100

dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/s]
-500
Irr,REVERSERECOVERYCURRENT[A]

90

-1000
80

-1500
70

60
-2000

50
-2500

40

-3000
30

20 -3500
2000 2500 3000 3500 4000 4500 5000 5500 2000 2500 3000 3500 4000 4500 5000 5500
diF/dt,DIODECURRENTSLOPE[A/s] diF/dt,DIODECURRENTSLOPE[A/s]
Figure 21. Typicalreverserecoverycurrentasa Figure 22. Typicaldiodepeakrateoffallofreverse
functionofdiodecurrentslope recoverycurrentasafunctionofdiode
(VR=400V) currentslope
(VR=400V)

150 2.50
Tvj = 25C IF = 25A
Tvj = 150C IF = 50A
135 IF = 100A
2.25

120
2.00
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]

105

1.75
90

75 1.50

60
1.25

45
1.00
30

0.75
15

0 0.50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tvj,JUNCTIONTEMPERATURE[C]
Figure 23. Typicaldiodeforwardcurrentasafunction Figure 24. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature

Datasheet 12 V2.1
2017-04-26
IKZ50N65ES5

TRENCHSTOPTM5softswitchingIGBT

Package Drawing PG-TO247-4

5 6

10 01221034356 1)*36


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Datasheet 13 V2.1
2017-04-26
IKZ50N65ES5

TRENCHSTOPTM5softswitchingIGBT

Testing Conditions

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit


Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

Datasheet 14 V2.1
2017-04-26
IKZ50N65ES5

TRENCHSTOPTM5softswitchingIGBT

RevisionHistory
IKZ50N65ES5

Revision:2017-04-26,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2017-04-26 Final data sheet

Datasheet 15 V2.1
2017-04-26
TrademarksofInfineonTechnologiesAG
HVIC,IPM,PFC,AU-ConvertIR,AURIX,C166,CanPAK,CIPOS,CIPURSE,CoolDP,
CoolGaN,COOLiR,CoolMOS,CoolSET,CoolSiC,DAVE,DI-POL,DirectFET,DrBlade,EasyPIM,
EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,GaNpowIR,
HEXFET,HITFET,HybridPACK,iMOTION,IRAM,ISOFACE,IsoPACK,LEDrivIR,LITIX,MIPAQ,
ModSTACK,my-d,NovalithIC,OPTIGA,OptiMOS,ORIGA,PowIRaudio,PowIRStage,PrimePACK,
PrimeSTACK,PROFET,PRO-SIL,RASIC,REAL3,SmartLEWIS,SOLIDFLASH,SPOC,
StrongIRFET,SupIRBuck,TEMPFET,TRENCHSTOP,TriCore,UHVIC,XHP,XMC

TrademarksupdatedNovember2015

OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.





Publishedby
InfineonTechnologiesAG
81726Mnchen,Germany
InfineonTechnologiesAG2017.
AllRightsReserved.

ImportantNotice
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(Beschaffenheitsgarantie).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand
liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird
party.

Inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseof
theproductofInfineonTechnologiesincustomersapplications.

Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof
customerstechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe
completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.

Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest
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PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive
ElectronicsCouncil.

Warnings
Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion
pleasecontactyournearestInfineonTechnologiesoffice.

ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized
representativesofInfineonTechnologies,InfineonTechnologiesproductsmaynotbeusedinanyapplicationswherea
failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.