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VLSI Current Mirrors Explained

This chapter discusses current mirrors and their operation. It covers the basics of long channel current mirrors including their ideal output resistance and derivation of the current ratio. Process variations like mismatches in threshold voltage and transconductance can affect current mirror matching. Layout considerations like common centering, interdigitization and differing widths are discussed to reduce mismatch effects.

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Rahul Yadav
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0% found this document useful (0 votes)
83 views8 pages

VLSI Current Mirrors Explained

This chapter discusses current mirrors and their operation. It covers the basics of long channel current mirrors including their ideal output resistance and derivation of the current ratio. Process variations like mismatches in threshold voltage and transconductance can affect current mirror matching. Layout considerations like common centering, interdigitization and differing widths are discussed to reduce mismatch effects.

Uploaded by

Rahul Yadav
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Baker Ch.

20 Current Mirrors Introduction to VLSI

Chapter 20
Current Mirrors
Basics
Long Channel
Matching
Biasing
Short Channel
Temperature
Subthreshold
Cascoding
Simple
Low Voltage, Wide Swing
Wide Swing, Short Channel
Regulated Drain
Biasing Circuits
Long Channel Biasing
Short Channel Biasing

Joseph A. Elias, Ph.D. Adjunct Professor, University of Kentucky; Modeling Principal, Cypress Semiconductor 1
Baker Ch. 20 Current Mirrors Introduction to VLSI

Current Mirrors - Basics LONG CHANNEL DERIVATION


IDEAL OUTPUT RESISTANCE=OO
OUTPUT CURRENT INDEPENDENT
OF VOLTAGE ACROSS SOURCE
Ids1 Ids2
ASSUME M1, M2 SAME W, L
D1 SHORTED TO G1
VGS1=VDS1=VGS2
Vgs1 Vgs2
DUE TO SAME Vgs, SAME Ids
IF RES EQUAL, M2 VD=M1 VD
THEREFORE: VGS1=VDS1=VGS2 =VDS2

CURRENT IN M1:
IREF = ID1 = (KPN/2) (W1/L1) (VGS1-Vtn)2
KNOWN:
VGS1= VGS2
VDS1,SAT = VGS1-Vtn (WHERE VDG=Vtn)
CURRENT IN M2:
IO = ID2 = (KPN/2) (W2/L2) (VGS1-Vtn)2
MARTIN RATIO OF THE CURRENTS:
IO / IREF = (W2/L2) / (W1/L1)
IF L1=L2, THEN:
IO / IREF = W2 / W1

Joseph A. Elias, Ph.D. Adjunct Professor, University of Kentucky; Modeling Principal, Cypress Semiconductor 2
Baker Ch. 20 Current Mirrors Introduction to VLSI

Current Mirrors - Basics LONG CHANNEL DERIVATION


IO / IREF = W2 / W1
SCALE W TO GET VARIOUS IO
WHAT IS THE RESISTOR VALUE?
FOR IREF=20uA,
IREF=(VDD-VGS1)/R R=(5-1.05)/20uA
R=200k OHMS
HOW IS VGS1=1.05 FOUND?
SWEEP VO TO FIND WHERE IREF=IO
SOLVE THE EQUATION:
IREF = ID1 = (KPN/2) (W1/L1) (VGS1-Vtn)2
KNOW IREF, KP, W, L, Vt
WHY DOES IO DROP BELOW 250mV?

CURRENT SOURCE RANGE:


VDS,SAT < VO < VDD

IMPORTANT IDEAS:
IO = IREF WHEN VO=VDS1=VGS1
IREF , VGS1 NOT DEPENDENT ON VO

Joseph A. Elias, Ph.D. Adjunct Professor, University of Kentucky; Modeling Principal, Cypress Semiconductor 3
Baker Ch. 20 Current Mirrors Introduction to VLSI
PROCESS CAUSE
Current Mirrors - Basics
FIRST-ORDER PROCESS ISSUES:
GATE OXIDE THICKNESS
LATERAL DIFFUSION
OXIDE ENCROACHMENT
OXIDE CHARGE DENSITY
THRESHOLD MISMATCH
MISMATCH IN Vt LEADS TO:
IO/IREF ~
REDUCED 1 [2 Vt / (VGS-Vt) ] =
RESISTANCE
1 [2 Vt / (VDS,SAT) ]
WANT LARGE VGS
REDUCES MISMATCH
TRANSCONDUCTANCE MISMATCH
MISMATCH IN KP LEADS TO:
IO/IREF ~ 1 + [KPN / KPN ]
WANT LARGE AREA, KP INCR
VDS MISMATCH
ETCHED MORE IO/IREF ~
ON OUTER POLY
[1 + 2VO] / [1+ 1VDS1]
CAP REDUCED BY (n+1)/2n
VDS VARIES W/ RESISTANCE
DO NOT USE SHORT CHANNEL
Joseph A. Elias, Ph.D. Adjunct Professor, University of Kentucky; Modeling Principal, Cypress Semiconductor 4
Baker Ch. 20 Current Mirrors Introduction to VLSI

Current Mirrors - Basics LAYOUT CONSIDERATIONS


DO NOT CHANGE ORIENTATION
IMPLANTS ARE ORIENTED
INTERDIGITIZE FINGERS
AVERAGES PROCESS VARIATIONS
COMMON
GATE DIFFERING WIDTHS ISSUES
LATERAL DIFFUSION LDIFF
OXIDE ENCROACHMENT WENC
IO/IREF =
(W2,DRAWN-2WENC)(L1,DRAWN-2LDIFF) /
(W1,DRAWN-2WENC)(L2,DRAWN-2LDIFF)
FIX L1=L2 , MINIMIZE MISMATCH
WIDTHS DETERMINE OFFSET

BUILT IN MISMATCH

USE FOLDING
TO REDUCE
MISMATCH

Joseph A. Elias, Ph.D. Adjunct Professor, University of Kentucky; Modeling Principal, Cypress Semiconductor 5
Baker Ch. 20 Current Mirrors Introduction to VLSI

Current Mirrors - Basics BIASING


DO NOT WANT TO USE RES
VARIES WITH TEMPERATURE
WANT IREF VDD-INDEPENDENT
REPLACE RES WITH XTOR
USE EITHER M1 OR M3
WANT VDS IND OF VDD, GND
EXAMPLE CHANGE VS. VDD:
IO ~ 8nA / mV
IREF (XTOR) ~ 12nA / mV
IREF (RES) ~ 5nA / mV

USING MODELS
FROM BOOK

Joseph A. Elias, Ph.D. Adjunct Professor, University of Kentucky; Modeling Principal, Cypress Semiconductor 6
Baker Ch. 20 Current Mirrors Introduction to VLSI

Current Mirrors - Basics SUPPLY INDEPENDENT BIAS


WANT IREF VDD-INDEPENDENT
LAST EXAMPLES 5-12nA/mV
MOVE RESISTOR FROM DS
DRAWBACK: VGS2!=VGS5
ADD M1 CAN USE M1 AS DIODE
DIODE MIRROR M1 CURRENT TO M5
NEED M2=M1 CURRENT
ADD PMOS CURRENT MIRROR
DERIVE IREF AS A FNCT OF VDD
MOVE RES VGS1=VGS2+(IREF)(R)
TO SOURCE
MAKES SENSE IF VGS1>VGS2
DONE BY MAKING W2>W1
ADD PMOS
RESULT:
CURRENT
MIRROR IREF= [ 2 / (R2KPNW1L1) ] [ 1-(1/(K)1/2) ]2
IREF INDEPENDENT OF VDD
CONSTANT-GM BIAS CIRCUIT
K=4, EVALUATE EQUATION
gm=[ 2KPN(W/L) IREF ]1/2 = 1/R

Joseph A. Elias, Ph.D. Adjunct Professor, University of Kentucky; Modeling Principal, Cypress Semiconductor 7
Baker Ch. 20 Current Mirrors Introduction to VLSI
BIASING-USING STARTUP
Current Mirrors - Basics
VDD<VG<VDD-Vtp UNWANTED STATE
NMOS SWITCH
M1, M2 GATES AT GND
M3, M4 GATES AT VDD
1
NO CURRENT FLOWS
NEED STARTUP
0 0
X IN THE ZERO-CURRENT STATE
PARASITIC MSU1 VG=0
CAP
MSU2 VG>=VDD-Vtp
MSU3 TURNS ON
VDD @ M3/4 M1/2
M1/2 RISE, CIRCUIT WORKS
MSU3 GATE GOES TO GND
POSITIVE FEEDBACK ISSUES
STABLE IF GAIN < 1
RESISTOR SMALL, GAIN>1
M2 PARASITIC CAP, R0
CIRCUIT WILL OSCILLATE
RESULTS
VDDMIN=VDS3,SAT+VGS1~1.3V
IREF / VDD ~ 800pA / mV
COMPARE TO 5-12nA / mV
Joseph A. Elias, Ph.D. Adjunct Professor, University of Kentucky; Modeling Principal, Cypress Semiconductor 8

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