Department of Electrical and Electronic Engineering

Shahjalal University of Science and Technology

Electronic Circuit Simulation Laboratory

EXPERIMENT NO.

Name of the Experiment: STUDY OF CHARACTERISTICS OF BIPOLAR JUNCTION

TRANSISTOR (BJT).

OBJECTIVE

The objective of this experiment is to simulate

Concept

Bipolar junction transistor (BJT) is a three terminal device with the terminals named as emitter (E), base

(B) and collector(C). In a npn-BJT, the emitter and the collector regions are of n-type while the central

base region is of p-type. In this device, the terminal currents are mainly dependent on the base-emitter

voltage, Vbe, and to a lesser extent on the base-collector voltage,Vcb. The structure of the device and

the circuit symbol are shown in Figure 8.1.

BJT consists of two pn junctions, the emitter-base junction and collector-base junction. Depending on

the bias condition of each of these junctions, current flows across the junctions accordingly. Current-

Voltage equations are as given below.

Experiment

1. DC Characteristics

Fig-1. Circuit for DC analysis of BJT in CE configuration

1.1. Draw the circuit shown in Fig. 1 in PSpice schematics.

1.2. Here, for determining the output characteristics a nested DC Sweep of VCE and IB is required. For
achieving this, Select Setup Analysis and then DC Sweep from the pop-up window. Sweep first VCE
from 0 to 10V in 0.1V increments. Then click on the Nested Sweep button for sweeping IB from 0A to 1
mA in 0.2mA increments. Mark the Enable Nested Sweep box.

1.3. After placing a current marker in the collector of the BJT (as shown in Fig. 1), run the simulation.

1.4. Output characteristic of the BJT will appear in the probe.

1.6 Determine the beta

1.7 In the PSpice Model Editor check the forward Beta parameters to as your calculated one.
1.8. [Home work] Draw a circuit for obtaining output characteristics of Q2N2222 in CB configuration and
simulate it using appropriate sources and nested sweeps.

2. Biasing of BJT

a) Fixed Bias Circuit

Fig-2

2.1. Draw the circuit of Fig. 2 (Fixed Bias Circuit). By choosing Setup analysis, mark Bias Point Detail
and Temperature. Set Temperature to 27 C.

2.2. Run the simulation and click on the Enable Bias Voltage Display and Enable Bias Current Display
icons.

2.3. Fill up the following table.

2.4 Change the temperature 50 C and beta= 100 and fill up the table

Temp= 27

Beta Ib % change of Ic % change of Vce % change of

Ib Ic Vce
50
100

Temp= 50

Beta Ib % change of Ic % change of Vce % change of

Ib Ic Vce

50

100

2.4 Comment on the stability of the biasing circuits with change in temperature and device model .
 Fig-3: Emitter Stabilized

3.1. Draw the circuit of Fig. 2 (Fixed Bias Circuit). By choosing Setup analysis, mark Bias Point Detail
and Temperature. Set Temperature to 27 C.

3.2. Run the simulation and click on the Enable Bias Voltage Display and Enable Bias Current Display
icons.

3.3. Fill up the following table.

3.4 Change the temperature 50 C and beta= 100 and fill up the table

Temp= 27

Beta Ib % change of Ic % change of Vce % change of

Ib Ic Vce

50

100

Temp= 50

Beta Ib % change of Ic % change of Vce % change of

Ib Ic Vce

50

100

3.4 Comment on the stability of the biasing circuits with change in temperature and device model .
 Fig-4: Voltage Divider

4.1. Draw the circuit of Fig. 2 (Fixed Bias Circuit). By choosing Setup analysis, mark Bias Point Detail
and Temperature. Set Temperature to 27 C.

4.2. Run the simulation and click on the Enable Bias Voltage Display and Enable Bias Current Display
icons.

4.3. Fill up the following table.

4.4 Change the temperature 50 C and beta= 100 and fill up the table

Temp= 27

Beta Ib % change of Ic % change of Vce % change of

Ib Ic Vce

50

100

Temp= 50

Beta Ib % change of Ic % change of Vce % change of

Ib Ic Vce

50

100

4.4 Comment on the stability of the biasing circuits with change in temperature and device model .