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PSpice Applications
Applications for
for Power
Power Electronics
Electronics
이상우
jonathan@onyxtech.co.kr
TEL: 031-908-7577
FAX: 031-908-7579
Mobile: 011-237-3846
㈜오닉스 테크놀로지스
Magnetic
Magnetic Core
Core Modeling
Modeling
The parameters in the model library(magnetics.lib) were derived from the data sheets
for each core.
The
TheJiles-Atherton
Jiles-Athertonmagnetics
magneticsmodel
modelisisdescribed
describedin:
in:
Theory
TheoryofofFerromagnetic
FerromagneticHysteresis,
Hysteresis,by
byDDCCJiles
Jilesand
andDDLLAtherton,
Atherton,
Journal
JournalofofMagnetism
Magnetismand
andMagnetic
MagneticMaterials,
Materials,vol
vol61
61(1986)
(1986)pp
pp48-60
48-60
Model parameters for ferrite material (Philips 3C8) were obtained by trial simulations,
using the B-H curves from the manufacturer's catalog.
Then, the library was compiled from the data sheets for each core geometry.
Notice that only the geometric values change once a material is characterized.
Magnetic
Magnetic Core
Core Modeling
Modeling
Notes:
1) Using a K device (formerly only for mutual coupling) with a model
reference changes the meaning of the L device: the inductance value
becomes the number of turns for the winding.
2) K devices can "get away" with specifying only one inductor, as in the
example above, to simulate power inductors.
Demonstration of power inductor B-H curve To view results with Probe (B-H
curve):
1) Add Trace for B(K1)
2) set X-axis variable to H(K1)
Probe x-axis unit is Oersted
Probe y-axis unit is Gauss
Magnetic
Magnetic Core
Core Modeling
Modeling
Method I Method II
1.1.K=0
K=0: :Anhysteric
AnhystericCurve
CurveSetup
Setup 1.1.MS
MS; ;BBmax/0.01257
max/0.01257
2.2.BBmax 결정 : Bmax=MS*0.01257
max 결정 : Bmax=MS*0.01257
2.2.100A/m=1.25
100A/m=1.25oersted
oersted
3.3.A조정
A조정: :GetGetaaCurve
Curve 3.3.MS, Í
MS, A, C, K ÍB-H
A, C, K Loop에서추출
B-HLoop에서 추출
4.4.K조정
K조정 : CreateHysteresis
: Create Hysteresis 4.4.Core Size에 따라 Area와 Path결정
Core Size에 따라 Area와 Path결정
5.5.C결정 : Initial Permeability
C결정 : Initial Permeability
Magnetic
Magnetic Core
Core Modeling
Modeling
Magnetic
Magnetic Core
Core Modeling
Modeling
Example(Ferroxcube사 참조)
3C81
H(Oersted) B(Gauss)
0 1100
0.176 0
3.125 4250
0.625 2560
0.625 3400
FIG. 1.
Magnetic
Magnetic Core
Core Modeling
Modeling
Example(Ferroxcube사 참조)
H(Oersted) B(Gauss)
0 1100
0.176 0
3.125 4250
0.625 2560
0.625 3400
Active Parameters
Initial Perm : 2700
Name Value
MS 384610
A 27.747
C 0.2418
K 18.396
FIG. 2.
Magnetic
Magnetic Core
Core Modeling
Modeling
5. 0K
B-H Curve
1. 3C81_LSW
2. EC70_3C81 0
R1
3C81_LSW
0.1 SEL>>
R2 R3 - 5. 0K
0.1 0.1
FIG. 4 - 3. 0
B( K2)
- 2. 0 - 1. 0 - 0. 0 1. 0 2. 0 3. 0
H( K2)
I1 5. 0K
IOFF = 0
IAMPL = 0.5 1 1
FREQ = 10k
TD = 1usec L1 L2
100 100
2 2
0
0 K K1 K K2
3C81_LSW EC70_3C81
1
COUPLING= 1
COUPLING=
EC70_3C81
FIG. 3
FIG. 5 - 5. 0K
- 3. 0 - 2. 0 - 1. 0 - 0. 0 1. 0 2. 0 3. 0
B( K1)
H( K1)
Magnetic
Magnetic Core
Core Modeling
Modeling
200T
K K1
PARAMETERS: 3C81_LSW
L1 = 50 1
COUPLING= 100T
L1 50T
{L1}
I1 I2 I3 2
IOFF = 0 IOFF = 0 IOFF = 0 0
IAMPL = 0.02 IAMPL = 0.05 IAMPL = 0.1
FREQ = 1k FREQ = 1k FREQ = 1k
TD = 1msec TD = 2msec TD = 3msec
R1
0.1
- 5. 0K
- 800m - 400m 0 400m 800m
B( K1 )
FIG. 6 H( K1 ) @1
FIG. 7.
Modeling
Modeling of
of Transformer
Transformer
1. K_Linear 사용
G1 E3 G3
+ G1
- Voltage-Controlled Current Source IN+ OUT+ IN+ OUT+
GVALUE
G IN- OUT- IN- OUT- V(%IN+, %IN-)
ETABLE GTABLE
H1 V(%IN+, %IN-) V(%IN+, %IN-)
+
- Current-Controlled Voltage Source
H
2.51
0.0269124 0.269m 0.0311
V1
Lm Rm R1
65.578H 73k 10
R5
FIG. 8
1Meg
4 6
F1
4
5
3
FNOM
Ideal Transformer E1
3 + +
4
- -
6 FIG. 9
ENOM
K_Linear 이용
5. 0K
R1
0.1 1 1
V1 L1 L2
VOFF = 0 R3
VAMPL = 10 1 1
FREQ = 1k {Ro}
0
2 R2 2
1meg
K K1
0 3C81_K_LINEAR_LSW
COUPLING= 1
PARAMETERS:
Ro = 1
- 5. 0K
FIG. 10 - 10 -5 0 5 10
B( K1)
H( K1)
FIG. 11
TX4
K^@REFDES L1^@REFDES L2^@REFDES
XFRM_LINEAR @COUPLING\nL1^@REFDES %1 %2
@L1_VALUE\nL2^@REFDES %3 %4 @L2_VALUE L1_VALUE = 10uH L2_VALUE = 10uH
3C81-HCM
TX2
K^@REFDES L1^@REFDES L2^@REFDES @COUPLING
@MODEL\nL1^@REFDES %1 %2 @L1_TURNS L1_TURNS = 2 L2_TURNS = 1
\nL2^@REFDES %3 %4 @L2_TURNS
@L3_TURNS L1_TURNS = 5
L2_TURNS = 1
L3_TURNS = 1
1meg
FIG. 14 R6 1meg
FIG. 12 R5 0
0 12V
10V
8V
Pr i ma r y
Pr i ma r y
5V
4V
Se c onda r y
Se c onda r y
0V
0V
- 4V
- 5V
- 8V
FIG. 13 FIG. 15
- 12V
0s 5us 10us 15us 20us
- 10V V( R4: 1) V( R3: 1)
0s 5us 10us 15us 20us Ti me
V( R1: 2) V( TX1: 3)
Ti me
12V
Pr i ma r y
XFRM_Nonlinear 소자에서 8V
Template 변경
Se c onda r y1
4V
R7 3C81_LSW
TX3 Se c onda r y2
0V
0.1
R8
V3 L2_TURNS = 2
VOFF = 0 L1_TURNS = 5 10
VAMPL = 10
FREQ = 100k - 4V
R9
L3_TURNS = 1
10
- 8V
R11 1meg
0
- 12V
FIG. 16 0s
V( R7: 2)
5us
V( TX3: 3)
10us
V( TX3: 5)
15us 20us
Ti me
FIG. 17
절연형과 비절연형에 의한 분류
에너지 축적 Type에 의한 분류
8. 0
Buck Converter
Out put
4. 0
M1
R1 IRF150 R4 L1
200u
IC = 0 - 4. 0 FIG. 19
0s 2. 0ms 4. 0ms 6. 0ms
V( R3: 1) I ( L1)
R5 Ti me
0
V1 = 0 G
10 567m
V6
V2 = 10 R6
TD = 1n
TR = 1n 1meg
TF = 1n 500m
PW = 4u S
PER = 10u
FIG. 18 400m
FIG. 20 345m
4. 560ms 4. 580ms 4. 600ms
V( R3: 1) I ( L1)
Ti me
(-Vo)
입출력 관계식
di FIG. 21
vL = L (1)
dt
(Vi − Vo ) DTS = Vo (1 − D)TS (2) 커패시터 값 설정
Vo = DVin (3) 1
C∫
∆vo = ic dt + ic Rc ≅ ic Rc = ∆iL Rc (7)
==> D = 0.4
인덕터 값 설정 ∆vo TS2 (1 − D)
= (8)
Vo 8 LC
Vin − Vo V −V
∆iL = Ton = in o DTS (4) TS2 (1 − D) Vo
L L C= • (9)
1 DTS 8L ∆vo
I LB = ∆iL = (Vi − Vo ) = I o ,min (5)
2 2L
V (1 − D)TS
L= o ( 6)
2 I o ,min
Simulation Waveforms
1
7. 85
2
589mA
( 4. 5541m, 556. 37 FIG. 22
( 4. 5441m, 7. 2568)
5. 00 On time : 4.551ms-4.54ms=4.1us
500mA
Off time : 10us-4.1us=5.9us
∆iL : 556.3mA-359.2mA=197.1mA
(Vi-Vo) : 7.26
0
(-Vo) : 4.99
400mA
( 4. 5500m, 359. 327m)
( 4. 5400m, - 4. 9904)
Inductor Voltage(1)
- 5. 00
>>
324mA
4. 5400ms 4. 5420ms 4. 5440ms 4. 5460ms 4. 5480ms 4. 5500ms 4. 5520ms 4. 5540ms
Inductor Current(2)
1 V( L1: 1) - V( L1: 2) 2 I ( L1)
Ti me
0A 4. 580V
400mA
Inductor Current(1)
Ca pa c i t or Cur r e nt
Capacitor Current(2)
>>
300mA - 400mA 4. 576V
Capacitor Voltage(3)
4. 428ms 4. 432ms 4. 436ms 4. 440ms 4. 444ms 4. 448ms
1 I ( L1) 2 I ( C1) 3 V( C1: 1)
Ti me
200
Boost Converter
100
Out put Vol t a ge
L1 R1 D1
in switch out I nduc t or Cur r e nt
0
50uH 0.1 MBR1045
R2
V1 0.01
48Vdc R3
R4 M1 - 100
10 0s 5ms 10ms
C1 V( OUT) I ( L1)
10 Ti me
IRF540
470u
V1 = 0 V2 R5 FIG. 25
V2 = 10
TD = 1n 100k 11. 65
TR = 1n
TF = 1n
PW = 3u
PER = 10u
0 10. 00
FIG. 24
8. 00
FIG. 26 6. 99
8. 854ms 8. 880ms 8. 920ms 8. 959ms
V( OUT) I ( L1)
Ti me
Boost Converter
50V 12A
1 2
FIG. 28
( 9. 983m, 11. 010)
- 50V
>>
8A
9. 970ms 9. 975ms 9. 980ms 9. 985ms 9. 990ms 9. 995ms 10. 000ms
Inductor Voltage(1)
1 V( I N, L1: 2) 2 I ( L1)
Ti me Inductor Current(2)
5A 12A 66. 46V
1 2 3
FIG. 29
11A
0A 66. 44V
10A
20
10
R1 3C81_LSW D1
MBR1035
0.1 TX1
Swi t c h Cur r e nt
50 10 R2 0
0.001 R3
V3
48Vdc C1 100
0.1Vac
TRAN =
47u FIG. 31 - 10
0s 5ms 10ms
R4 M2 V( R3: 1) I D( M2)
Ti me
10
V1 = 0 V2 IRF840
V2 = 10 R5 478m
TD = 1n R7
TR = 1n 100k
TF = 1n 100k
PW = 3u
PER = 10u
250m
0
FIG. 30
FIG. 32 - 93m
8. 5287ms 8. 5400ms 8. 5600ms 8. 5743ms
V( R3: 1) I D( M2)
Ti me
100V 10. 0A 5. 0V
Forward Converter
1 2 3
50V
3C81_LSW
R1 COUPLING = 0.9 D2 R2 L1
out 5. 0A 0V
30
1 MBR1045 0.1 500uH
TX1
R3 R4 0V
30 5 Swi t c h Cur r e nt Vds
D3 0.01 10
Out put Vol t a ge
MBR1045
V1 C1
48Vdc >>
47u - 50V 0A - 5. 0V
0s 2ms 4ms 6ms 8ms 10ms
R7 M4 1 V( M4: d) 2 I ( L1) 3 V( OUT)
Ti me
R9
50 IRF840 1
V2 V1 = 0
R6 FIG. 34
V2 = 10
TD = 1n
TR = 1n 100k D15 R5
TF = 1n
PW = 3u MBR1045 10Meg
PER = 10u
72. 6V 8. 174A 3. 174V
1 2 3
72. 0V
0
8. 100A 3. 100V
FIG. 33
70. 0V 8. 000A 3. 000V
>>
7. 900A 2. 900V
68. 4V
9. 2432ms 9. 2600ms 9. 2800ms 9. 3000ms 9. 3200ms 9. 3378ms
1 V( M4: d) 2 I ( L1) 3 V( OUT)
Ti me
FIG. 35
Buck Converter
A 1:D C
A C
DIO IO
Vin DVin VO
P P P
FIG. 36 FIG. 37
R6
+
-
G1 E1 Vin H
A
1 G2 E2
0
IN1+ IN1+ H1 Vout
OUT+
IN1- IN1-
OUT+ OUT+ IN+ IN+ OUT+ C
I(In)=I(Out)*D GMULT EMULT
+
- Iin=Iout*DR1
Iin OUT- IN- IN- OUT-
1
OUT-
IN2+ IN2+
OUT- H 1Meg GVALUE EVALUE R4
IN2- IN2- Out 2 V(Io)*V(D) V(Vin)*V(D)
1Meg
P 2
Diode D
Duty Vout=Vin*D
1
V(Out,Diode)=V(In,Diode)*D
Duty_Cycle R3
D
1Meg
2
0
FIG. 38 FIG. 39
Boost Converter
R2 1k
Io
Iin=Io/(1-D)
C Vin H1
0
+
-
G1 E1 H
Vo
OUT+ IN+ IN+ OUT+ P
OUT- IN- IN- OUT-
GVALUE EVALUE
A V(Io)/(1-V(D)) V(Vin)/(1-V(D))
A Vo=Vin/(1-D)
D
D 0
R1 C P
1Meg
0 A
FIG. 40
PARAMETERS:
L3 = 150u Out put Vol t a ge
S2_1 L3 R14
1 2 1 2 4. 0
A C
{L3} 0.1
1
P
Duty C6 1
V10 V12 I nduc t or Cur r e nt
DC = 12Vdc 1Vac 2 R16
AVG_PWM2
AC = 0Vac 0.4Vdc 47u 0
TRAN = 10
1
2
R15
0.01
2
FIG. 42
- 4. 0
0s 5ms 10ms
Ga i n Cur ve
0 0 0
Pha s e Cur ve
- 100 - 100
- 100
- 200
- 200 1. 0Hz 100Hz 10KHz 1. 0MHz 100MHz - 200
1. 0Hz 100Hz 10KHz 1. 0MHz 100MHz VDB( R14: 2) VP( R14: 2) 1. 0Hz 100Hz 10KHz 1. 0MHz 100MHz
VDB( R14: 2) VP( R14: 2) VDB( R14: 2) VP( R14: 2)
Fr e que nc y
Fr e que nc y Fr e que nc y
R1 L1 S1
C P
0.1
200uH
R2
D
A 0.01
48Vdc Boost_PWM R3
V1
0Vac 20
V2
0.1Vac C1
TRAN = 0.3Vdc 470u
FIG. 46
Compensation
Type I.
100
C1
1 2
1n
1
fC =
IC = 0
(20)
2πRC
VCC- U1A
Ga i n
4
R1 TL082
1 2 2
V-
-
10k
1 0
OUT
3
V+
+
V1
1Vac V2
0Vdc
8
1Vdc VCC+
VCC+ VCC-
Pha s e
0
V3 V4
5Vdc -5Vdc - 100
1. 0Hz 100Hz 10KHz 1. 0MHz
FIG. 47 VDB( C1: 2) VP( C1: 2) - 1 80
Fr e q ue nc y
FIG. 49
C2
1 2
1n
IC = 0
R4 G1
E1
1 2 - 1 + +
10k + - -
R5 E
V8 V7 G
1Vac 2.5Vdc 10Meg
2.5Vdc 2
0
0 FIG. 48
(1 + sC1 R2 )
Ga i n
vc
= (21)
vo C1C2 0
s (C1 + C2 ) R1 1 + s R2
(C1 + C2 ) Pha s e
1 FIG. 50
fZ = (22) - 100
2πC1 R2
1. 0Hz 100Hz 10KHz 1. 0MHz
VDB( C1: 2) VP( C1: 2) - 180
Fr e que nc y
C2
1 2
1n
R2 C1
1 2 IC1= 0 2
C + C2 1 10k
100n
fP = 1 ≅ (Q C1 >> C2 )
IC = 0
(23)
2πC1C2 R2 2πC2 R2 VCC- U1A
4
R1 TL082
1 2 2
V-
-
1k
1
R OUT
AV 1 = 2 (24) V1 3
V+
1Vac +
V2
R1 2.5Vdc
2.5Vdc
8
VCC+
FIG. 51
0
R3 C2
1 2 1 2
100k
Type III. 1
C1
2
100n
IC = 0
5n
VCC- U1A
IC = 0
4
R2 TL082
V-
-
vo sC2 R1 (1 + sC1 R2 ) V1 3
V+
1Vac +
2.5Vdc V2
8
2.5Vdc VCC+
1 FIG. 52
f Z1 = (26)
2πC1 R1 50
0
1
fZ 2 = (27) Ga i n
2πC2 R3 0
1
fP = (28)
2πC1 R2 - 50
Pha s e
R3
AV 1 = (29)
R1 + R2 - 100
1. 0Hz 100Hz 10KHz 1. 0MHz
AV 2 =
Fr e que nc y
(30) FIG. 53
R2
Type IV.
1
f Z1 = (32)
2πC1 R2
50
Ga i n
1 1
fZ 2 = ≅ (33) 0
2πC3 ( R1 + R3 ) 2πC3 R1
Pha s e
- 50
1
f P1 = (34)
2πC3 R3 - 100
1. 0Hz 100Hz 10KHz 1. 0MHz FIG. 54
C1 + C2 1 VDB( C1: 2) VP( C1: 2) - 180
f P1 = ≅ (Q C1 >> C2 )
Fr e que nc y
(35)
2πC1C2 R2 2πC2 R2
R2 ( R1 + R3 ) R2
R
AV 1 = 2 (36) AV 2 = ≅ (37)
R1 R1 R3 R3
R6
1Meg
Io
H2
fc=1/{2*3.14*sqrt(LC)}
+
-
Iin=Iout*D H
Vin G2 E2 R2 L1
1 Vout 1 2 1 2
OUT+ IN+ IN+ OUT+
OUT- IN- IN- OUT- 0.1 {L1}
R1
1Meg GVALUE EVALUE R5 Vout=Vin*D 1
V(Io)*V(D) V(Vin)*V(D)
1 100
2 1Meg R7
V1 R8
0Vac 0.1
PARAMETERS: 2 1
16Vdc
A C C1 = 400uF 1 2
1 L1 = 150uH Ga i n_R11=10k
V2 R11 = 1k C1
1Vac R3 Ga i n_R11=100k
2 {C1}
0.31Vdc 1Meg D 0
2 P
C3 R9
0 1 2
5k Pha s e
R12 10p C2
EA 2 1
- 100
100k 100nIC = 0
E3 E4 R13 R11
E1 G1
D EA_out + -
OUT+ IN+ OUT+ IN+ +
OUT- IN- OUT- IN-
-
- +
R15 10 E G {R11}
R16 EVALUE R14 R4
EVALUE if(V(EA)>10, 1, V(EA)) V5
1meg V(EA_out)*0.5 1meg 1Meg 1meg 2.5Vdc R10 V4
5k
- 200
5Vac 1. 0Hz 100Hz 10KHz 1. 0MHz
0Vdc
0 VDB( L1: 2) VP( L1: 2) - 180
Fr e que nc y
0
FIG. 55 FIG. 56
PF
PF//THD
THD
Power Factor
– What Is It and Why Must It Be Corrected?
VL = (− jωL) I IN
IIN VL
L
VIN = I IN R 2 + ω 2 L2 Reactive Power
VIN R VR = ( RI IN ) Apparent Power
VL = ωL I IN
ωL
tan θ =
R
θ
VIN = R I IN cosθ
FIG. 57 True Power FIG. 58
PF
PF//THD
THD
If v(t) has form of sine wave, power factor can be expressed as following.
I 2 rms − I 2 rms(1)
THD = * 100
Irms(1)
PF
PF//THD
THD
Irms 2
THD = ( ) − 1 *100
Irms(1)
1
THD = − 1 * 100
K 2d
1
Kd =
THD 2
1+ ( )
100
Irms(1)
PF = cosθ = Kd * Kθ = Kd
Irms
1
∴ PF =
THD 2
1+ ( )
100
Relationship
RelationshipBetween
BetweenPF
PFand
andTHD
THD
v v
i i
v v
i i
FIG. 59
Equipment
EquipmentClassification
Classification
Balanced Yes
three-phase
equipment?
No
Equipment 0 π/2 ωt π
having the Yes Motor No Class
special driven? D
Class D Wave Shape Definition
wave shape?
No Yes
Class FIG. 61
A
FIG. 60
IEC
IEC555-2
555-2Absolute
AbsoluteLimits
Limits
10
CLASS B
5
CLASS A
2
(Arms)
Amplitude
1
0.5
0.2
0.1
0.05 CLASS D
CLASS C
0.02
0.01
1 2 3 5 10 20 30 50 100
Harmonic Number (n)
FIG. 62
IEC
IEC555-2
555-2Class
ClassDDSpecification
Specification
Maximum Permissible
Harmonic Order mA/W
Harmonic Current
3 3.4 2.30
5 1.9 1.14
7 1.0 0.77
9 0.5 0.40
11 0.35 0.33
13 and on Linear Extrapolation See Limits for Class
3.85/n A Equipment
Notes:
1. Class-D specifications apply to equipment operating from a single-phase 220V ac line
with a waveshape such as that exhibited by the input current to a rectifier with a
apacitive input filter.
2. Current IEC documentation suggests that the above Class D limits will be applicable
from 1st January 1995 to all equipment having an input power from 75W to 600W.
PFC
PFCSpecification
SpecificationInformation
Information
Comparison
Comparison
FIG. 63 FIG. 64
Single
SinglePhase
PhasePFC
PFCTopologies
Topologies
Single-Phase
PFC
Resonant VPEC
Boost PFC Flyback PFC
PFC Circuits
Buck+Boost Isolated Boost
PWM Phase
PFC PFC
Shift PFC
Shower PFC
Dither PFC
BIFRED PFC
BIBRED PFC
Basic
BasicTopology
Topology&&Control
ControlMethod
Method
Vmo=K*Vm1*(Vm2-Vref)
iL*Rcs
AC
3.Turn-ON
S
F/F Q
R
+ 2.Turn-OFF
Vdet
_
_
4.Feed-back
1.Boundary X +
Vout
Vref
FIG. 65 FIG. 66
Experimental
Experimental Results
Results
V & I V & I
250 250
200 200
150 150
100 100
50 50
0 0
0 100 200 300 400 500 0 100 200 300 400 500
-50 -50
input current input current
-100 -100
0.5A/div 1A/div
-150 -150
input voltage input voltage
-200 -200
50V/div 50V /div
-250 -250
Experimental
Experimental Results
Results
1
V & I
250 0.99
200 0.98
150
0.97
100
Power Factor
0.96
50
0 0.95
0 100 200 300 400 500
-50
input current 0.94
-100
2A/div 0.93
-150
input voltage Ro=1.5k
0.92
-200 Ro=1k
50V /div
-250
Ro=500
0.91
0.9
80 100 120 140 160 180 200 220 240
Output Power = 250W Input Voltage
FIG. 69
Power Factor Versus the Input Voltage Variation
FIG. 70
Two
Two Stage
Stage Topology
Topology
T1
C2
L1 N1
C3
Q1 N2 N4
R1
Vi D1 Q2 Q4
C1 CCFL
Q3
N3
R2
PWM IC
FIG. 71
Simulation
Simulation Circuit
Circuit of
of Buck
Buck ++ Royer
Royer Topology
Topology
K K1
K_Linear
1
COUPLING = 1
L3 R6
8uH
10meg
1
2
M1 C1 22p
IRFU9010 L1
1 2
L5 R1
60uH 0.206H
1 120k
2
R3 R5 L2
V2 V1 = 7 V1 R7
0.21k 0.2k 8uH 0
15Vdc C4 V2 = 15 D1
TD = 0 Dbreak
1u 2 10meg
TR = 1n C3
TF = 1n
C2 22p
PW = 10u R2
2u
PER = 20u Q2N6473 120k
Q2N6473
Q2 V Q1
V
0 0 0 0
0
0 0
L4
0.88uH
FIG. 72 2
Simulation
Simulation Result
Result
40V 400V
30V
200V
20V
0V
10V
- 200V
0V
- 10V - 400V
0s 200us 400us 500us 0s 200us 400us 500us
V( Q1: c) V( Q2: c) V( C1: 2) V( R2: 1)
Ti me Ti me
FIG. 73 FIG. 74
Single
Single Stage
Stage Topology
Topology
Q1
C2 L1 T1 C4
Vi
C1 N1 N2
Q2 C3
R1 R2 CCFL
CONTROL IC
FIG. 75
Freq.
Freq. Characteristic
Characteristic of
of Power
Power Stage
Stage
Vin 8 -
20Vdc
S1 V P ROBE
L1 C4 T1
S2 AC 1V C5
LAMP
Fe e dback
R8 VR1
• Charge Pump Technique
(NMOS)
Vin=20V
• High System Efficiency
2kV
Dimming Max
Dimming Min
• Low Cost
f.min f.max
fr
FIG. 76
Power
Power Stage
Stage AC
AC Simulation
Simulation
FIG. 77
AC
AC Simulation
Simulation Result
Result
250
V(R68K)
V(R150K)
200
150
Voltage
100
50
0
0 50000 100000 150000 200000 250000
Frequency
FIG. 78
AC
AC Simulation
Simulation that
that Consider
Consider Actual
Actual Parameters
Parameters
FIG. 79
Simulation
Simulation Results(Ideal
Results(Ideal // Actual
Actual Case)
Case)
Ideal
1400
V(out1)
1200 Actual V(out2)
1000
800
Voltage
600
400
200
0
0 50000 100000 150000 200000
Frequency
FIG. 80
Power
Power Stage
Stage Design
Design Guideline
Guideline
Parameter Description Typical Value Units
VLrms Nominal Lamp Operating Voltage at full brightness 420 V
Program of De s ign guide line ILrms
fo
Nominal Lamp Operating Current at full brightness
Minimum Operating Locked Frequency
5
53
mA
kHz
Lm Primary side Magnetizing Inductance 143 µH
Cout Output Ballasting Capacitor 100 pF
Vin Power circuit DC voltage 7 V
Cs 0.8 µ H
0.3uF N
Input DC Decoupling Capacitor
Turns ratio of Transformer 74 none
Q1 34.5uH 1 : 74
1. The vertual resistance of the lamp at the operating point Rout = 84.0 kΩ
2. The RMS value of the equivalent sinewave source voltage Vrms = 3.15 V
C2 L1 T1 3. The input impedance Rs = 4.73 Ω
Vi 4. The impedance of the converted secondary capacitance Xcop = 48.5 Ω
5. The parallel equivalent load resistance Rop = 17.4 Ω
6. The total parallel net capacitance Xctot = 10.6 Ω
C1 N1 N2 7. The net value of the required series inductor XLs = 11.5 Ω
Q2 C3 8. The impedance of the primary side magnetizing inductance XLm = 47.6 Ω
R1 CCFL 9. The actual capacitive impedance that must be used Xcp = 10.6 Ω
10. The parallel capacitor value Cp = 284 nF
234nF 11. The series inductance value Ls = 34.5 µ H
KA7523
Control IC FIG. 81
Frequency response of output voltage
1600
140.0
1200
100.0
80.0 400
60.0
FIG. 82 FIG. 83
0
40.0
1E+3 10E+3 100E+3 1E+6
1.00 1.20 1.40 1.60 1.80 2.00
Q frequency f [Hz]
Mixed
Mixed Dimming
Dimming Control
Control Method
Method
C5
Burst Ct Frequency=150Hz Vdim SS
- ++
Feedback Burst
E/A OSC Ct
SS
Burst OSC Ct
PWM
Comparator
IS Main Switching Frequency=100kHz
SS
Output
Drive
Switching Frequency=100kHz
Burst R19 R20 R21 OSC
Ct 0.5k 30k 0.5k Ct Main
SS Ct
0.1V
S/S
150Hz R22 SS
Burst Dimming Mode Analog Dimming Mode
3k
Q25 Q26
Iref FIG. 85 Timing Waveforms of the Control Circuit
R16
DIM(Vdim:0↔5V) 1.2k Vref:1.25↔3.65V
Idim
Vdim:1.5V→Idim:66.7uA(Vref:1.31V)
Vdim:5.0V→Idim:2.4mA(Vref:3.65V) Idim R23
Q27 1k Vdim
Q22 5.0V
R17 R18
0.3k 0.3k Burst OSC
Burst Dimming Area Ct
Experimental
Experimental Results
Results
Soft Start
FIG. 87 FIG. 88
Experimental
Experimental Results
Results
Css
COMP
Output Drive
Lamp Voltage
FIG. 89
Experimental
Experimental Results
Results
SDP
Output Drive
Lamp Voltage
FIG. 90