Analysis and Design of Analog Integrated Circuits

Lecture 16

Subthreshold Operation and gm/Id Design

Michael H. Perrott
April 1, 2012

Copyright © 2012 by Michael H. Perrott

All rights reserved.

M.H. Perrott
 A Closer Look at Transconductance
Id Vds > ΔV
d
Id
g
M1
ΔId
Vgs s Id_op gm =
ΔVgs
Vgs_op
Vgs
NMOS VTH Vgs_op

ΔV
 Assuming device is in strong inversion and in saturation:
μnCox W
ID = (Vgs − VT H )2(1 + λVds)
2 L s
δId W W
⇒ gm = ≈ μnCox (Vgs −VT H ) ≈ 2μnCox Id
δVgs L L
q
Id 2μnCox W/L 2Id
⇒ gm ≈ √ ≈
Id (Vgs − VT H )
M.H. Perrott 2
 Unity Gain Frequency for Current Gain, ft

|Id/Iin|
d
Id
g
M1
Iin s Vds
0dB f
NMOS ft

 Under fairly general conditions, we calculate:

 ft is a key parameter for characterizing the achievable

gain·bandwidth product with circuits that use the device
M.H. Perrott 3
 Current Density as a Key Parameter

Id W

Id
W
L
M1 Id
W

 Current density is defined as the ratio Id/W:

- We’ll assume that current density is altered by keeping
Id fixed such that only W varies
 Maintains constant power
 ro (i.e., 1/gds = 1/(Id)) will remain somewhat constant

M.H. Perrott 4
 Investigating Impact of Current Density

 For simplicity, let us assume that the CMOS device

follows the square law relationship
μnCox W
ID ≈ (Vgs − VT H )2
2 L
- This will lead to the formulations:
s µ ¶
2L Id 2Id
Vgs − VT H ≈ gm ≈
μnCox W Vgs − VT H

- These formulations are only accurate over a narrow

region of strong inversion (with the device in saturation)
- However, the general trends observed from the above
expressions as a function of current density will provide
useful insight

M.H. Perrott 5
 Investigate the Impact of Increasing Current Density
−6 Gate Overdrive versus Current Density
x 10
1.5
Vgs−Vth (Volts)

1
s µ ¶
Gate overdrive increases
0.5 2L Id
Vgs − VT H ≈
0
−7 −6 −5 −4 −3
μnCox W
10 10 10 10 10
−3 Transconductance versus Current Density
x 10
8

6
gm (1/Ohms)

4 gm decreases 2Id
2 gm ≈
Vgs − VT H
0
−7 −6 −5 −4 −3
10 10 10 10 10
11 ft versus Current Density
x 10
4

3
√
ft (Hz)

2
ft increases 1 gm W
1 ft = ∝
0
2π Cgs W
−7 −6 −5 −4 −3
10 10 10 10 10
Current Density Id/W (Amps/micron)

W decreased with fixed Id

M.H. Perrott 6
 Transconductance Efficiency Versus ft
−6 Gate Overdrive versus Current Density
x 10
1.5
Vgs−Vth (Volts)

1
s µ ¶
Gate overdrive increases
0.5 2L Id
Vgs − VT H ≈
0
−7 −6 −5 −4 −3
μnCox W
10 10 10 10 10
−3 Transconductance versus Current Density
x 10
8

6
gm (1/Ohms)

4 gm decreases 2Id
2 gm ≈
Vgs − VT H
0
−7 −6 −5 −4 −3
10 10 10 10 10
11 ft versus Current Density
x 10
4

3
√
ft (Hz)

2
ft increases 1 gm W
1 ft = ∝
0
2π Cgs W
−7 −6 −5 −4 −3
10 10 10 10 10
Current Density Id/W (Amps/micron)

Higher gm (more gain) Higher ft (faster speed)

M.H. Perrott 7
 Transistor “Inversion” Operating Regions
−6 Gate Overdrive versus Current Density
x 10
1.5
Vgs−Vth (Volts)

1
s µ ¶
Gate overdrive increases
0.5 2L Id
Vgs − VT H ≈
0
−7 −6 −5 −4 −3
μnCox W
10 10 10 10 10
−3 Transconductance versus Current Density
x 10
8

6
gm (1/Ohms)

4 gm decreases 2Id
2 gm ≈
Vgs − VT H
0
−7 −6 −5 −4 −3
10 10 10 10 10
11 ft versus Current Density
x 10
4

3
√
ft (Hz)

2
ft increases 1 gm W
1 ft = ∝
0
2π Cgs W
−7 −6 −5 −4 −3
10 10 10 10 10
Current Density Id/W (Amps/micron)

Weak Moderate Strong

M.H. Perrott 8
 Key Insights Related to Current Density

 Current density sets the device operating mode

- Weak inversion (subthreshold): highest g efficiency
m
 Achieves highest g for a given amount of current, I
m d
- Strong inversion: highest f t
 Achieves highest speed for a given amount of current, I d
- Moderate inversion: compromise between the two
 Often the best choice for circuits that do not demand the
highest speed but cannot afford the low speed of weak
inversion (subthreshold operation)
 Key issue: validity of square law current assumption
μnCox W
ID = (Vgs − VT H )2(1 + λVds)
2 L
- The above is only accurate over a narrow range of strong
inversion (i.e., the previous plots are inaccurate)
 General observations above are still true, though
M.H. Perrott 9
 A Proper Model for Subthreshold Operation
ID

VGS<VTH
G
VDS
S D

 Drain current:
W Vgs/(nVt) ³ −Vds/Vt
´
ID = ID0 e 1−e
L
- Where: Vt =
kT
≈ 26mV at T = 300K
q
Cox + Cdepl
n= ≈ 1.5
Cox
ID0 = μnCox (n − 1)Vt2e−VT H /(nVt)
- Note: channel length modulation, i.e., , is ignored here
M.H. Perrott 10
 Saturation Region for Subthreshold Operation
Drain current Versus Vds and Vgs
140
Vgs = 0.44V
120

100

80 Vgs = 0.42V
I (nA)
d

60
Vgs = 0.4V
40

20

0
0 0.1 0.2 0.3 0.4 0.5
Vds (Volts)

 Saturation occurs at roughly Vds > 100 mV

W Vgs/(nVt ) ³ −Vds/Vt
´ W Vgs/(nVt)
⇒ ID = ID0 e 1−e ≈ ID0 e
L L 11
M.H. Perrott
 Transconductance in Subthreshold Region

Id Vds > 100mV

d
Id
g
M1
ΔId
Vgs s Id_op gm =
ΔVgs
Vgs_op
Vgs
Vgs_op
NMOS
 Assuming device is in subthreshold and in saturation:
W Vgs/(nVt) gm purely a
ID ≈ ID0 e
L function of Id!
δId W Vgs/(nVt) 1 Id
⇒ gm = ≈ ID0 e =
δVgs L nVt nVt

2Id
Recall for strong inversion : gm ≈
(Vgs − VT H )
M.H. Perrott 12
 Comparison of Strong and Weak Inversion for gm

 Assumption: Id is constant with only W varying

 Strong inversion formulation predicts ever increasing
gm with reduced overdrive voltage
2Id
gm ≈
(Vgs − VT H )
- Reduced current density leads to reduced overdrive
voltage and therefore higher gm
 Weak inversion formulation predicts that gm will hit a
maximum value as current density is reduced
Id
gm =≈
nVt
- Note that the area of the device no longer influences g m
when operating in weak inversion (i.e., subthreshold)

M.H. Perrott 13
 Hybrid- Model in Subthreshold Region (In Saturation)
d
g

d
g
vgs Cgs gmvgs gmbvs ro
s

 Looks the same in form as for strong inversion, but

different expressions for the various parameters
µ ¶ µ ¶
1 Id n − 1 Id 1
gm ≈ gmb ≈ ro ≈
n Vt n Vt λId

- We can use the very same Thevenin modeling

approach as in strong inversion
 We just need to calculate gm and gmb differently
M.H. Perrott 14
 Noise for Subthreshold Operation (In Saturation)
d
g

d
g
vgs Cgs gmvgs gmbvs ro 2
ind
s

 Recall transistor drain noise in strong inversion:

K g 2
f m
i2
nd = 4kT γg dso ∆f + 2
∆f
f W LCox
Thermal noise 1/f noise
 In weak inversion (i.e., subthreshold):
Kf gm 2
2
ind = 2kT ngm∆f + ∆f
f W LCox2

Thermal noise 1/f noise

M.H. Perrott 15
 Strong Inversion Versus Weak Inversion

 Strong inversion (Vgs > VTH)

- Poor g efficiency (i.e., g /I is low) but fast speed
m m d
- Need V > (V – V ) = V to be in saturation
ds gs TH
- Key device parameters are calculated as:
2Id γgm 1
gm ≈ gmb ≈ q ro ≈
(Vgs − VT H ) 2 2|ΦF | + VSB λId
 Weak inversion (Vgs < VTH)
- Good g efficiency (i.e., g /I is high) but slow speed
m m d
- Need V > 100mV to be in saturation
ds
- Key device
µ ¶
parameters are calculated as:
µ ¶
1 Id n − 1 Id 1
gm ≈ gmb ≈ ro ≈
n Vt n Vt λId
 Moderate inversion: compromise between the two
Thevenin Modeling Techniques Can Be Applied to All Cases
M.H. Perrott 16
 gm/Id Design

 gm/Id design is completely SPICE based

- Hand calculations of g , r , etc. are not performed
m o
 Various transistor parameters are plotted in terms of
gm/Id
- Low g /I corresponds to strong inversion
m d
- High g /I corresponds to weak inversion
m d
 Once a given value of gm/Id is chosen, it constrains
the relationship between W, L, ft, etc. such that the
sizing of devices becomes a straightforward exercise

M.H. Perrott 17
 Useful References Related to gm/Id Design

 Prof. Bernhard Boser’s Lecture:

- B. E. Boser, "Analog Circuit Design with Submicron
Transistors," IEEE SSCS Meeting, Santa Clara Valley, May
19, 2005,
http://www.ewh.ieee.org/r6/scv/ssc/May1905.htm
 Prof. Boris Murmann’s Course Notes:
- https://ccnet.stanford.edu/cgi-
bin/course.cgi?cc=ee214&action=handout_view&V_sect
ion=general
 See Slides 45 to 67 in particular
 Prof. Reid Harrison’s paper on a low noise instrument
amplifier:
- http://www.ece.utah.edu/~harrison/JSSC_Jun_03.pdf

M.H. Perrott 18
 Summary

 CMOS devices in saturation can be utilized in weak,

moderate, or strong inversion
- Each region of operation involves different expressions
for drain current as a function of V and V
gs ds
- It is best to use SPICE to calculate parameters such as
gm, gmb, ro due to the complexity of the device model in
encompassing these three operating regions
 gm/Id methodology is one such approach
- Weak inversion offers large gm/Id but slow speed, and
strong inversion offers fast speed but lower gm/Id
- Moderate inversion offers the best compromise between
achieving reasonable gm/Id and reasonable speed
 Thevenin modeling approach is valid for all operating
regions once gm, gmb, and ro are known

M.H. Perrott 19