f NOTE: Answer any 5 questions

All questions carry equal marks

1.(a)Derive density of states function and hence deduce

expression for it.

(b) What is fermi distribution function and fermi

energy.Explain fermi probability function variation with
energy at different temperatures.Explain its significance.

2.(a) If fermi energy level is 0.35eV above the valance

band.Then determine the probability of a state being empty at
temperature equal to 300K.
(b) Deduce an expression for thermal equilibrium electron and
hole concentration in semicoductors.

4.(a) Explain formation of PN junction diode and hence deduce

an expression for built in potential in an unbiased PN junction
diode.

(b) Describe working of Junction field effect transistor.

5. Write short notes on( any two)

(a) Tunnel Diode

(b)Compensating semiconductors

(c) Avalanche Breakdown.

6.(a)What is BJT.Explain its input and output charachterstic

feature .Deduce an expression for collector current in terms of
amplification factor in a common base configuration.

(b) A common emitter transistor has a current gain of 50.if the

load resistance is 4KΩ and input resistance is 500KΩ. Then
calculate voltage gain of the amplifier.