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The 9th edition of GATE MCQ Electronics & Communication Engineering has been revised exhaustively as per new
GATE Syllabus. The book has been completely revised in this edition, with the purpose not only of updating the
material, but just as important, making the book a better learning aid. This new edition is enriched by increasing
the number of problems as well as covering more topics of a subject. The book includes both the Multiple Choice
Questions (MCQ) and Numerical Answer Type (NAT) problems. Each problem is accompanied by a step-by-step and
well-explained solution. To improve the readability, the contents are represented with illustrative diagrams, standard
notations, relatively consistent variable naming and easy-to-understand explanations.
This new edition is the outcome of 10 successive years of compilation, revision & improvement of contents by
the authors and their team. In the past few years, a rumor was spread to defame the book that it has some errors.
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Syllabus
Calculus : Mean value theorems, theorems of integral calculus, evaluation of definite and improper integrals, partial
derivatives, maxima and minima, multiple integrals, line, surface and volume integrals, Taylor series.
Differential Equations : First order equations (linear and nonlinear), higher order linear differential equations, Cauchy’s
and Euler’s equations, methods of solution using variation of parameters, complementary function and particular
integral, partial differential equations, variable separable method, initial and boundary value problems.
Vector Analysis : Vectors in plane and space, vector operations, gradient, divergence and curl, Gauss’s, Green’s and
Stoke’s theorems.
Complex Analysis : Analytic functions, Cauchy’s integral theorem, Cauchy’s integral formula; Taylor’s and Laurent’s
series, residue theorem.
Numerical Methods : Solution of nonlinear equations, single and multi-step methods for differential equations, convergence
criteria.
Probability and Statistics : Mean, median, mode and standard deviation; combinatorial probability, probability
distribution functions - binomial, Poisson, exponential and normal; Joint and conditional probability; Correlation and
regression analysis.
Continuous-time signals: Fourier series and Fourier transform representations, sampling theorem and applications;
Discrete-time signals: discrete-time Fourier transform (DTFT), DFT, FFT, Z-transform, interpolation of discrete-time
signals; LTI systems: definition and properties, causality, stability, impulse response, convolution, poles and zeros,
parallel and cascade structure, frequency response, group delay, phase delay, digital filter design techniques.
Section 7: Communications
Random processes: autocorrelation and power spectral density, properties of white noise, filtering of random signals through
LTI systems; Analog communications: amplitude modulation and demodulation, angle modulation and demodulation,
spectra of AM and FM, superheterodyne receivers, circuits for analog communications; Information theory: entropy,
mutual information and channel capacity theorem; Digital communications: PCM, DPCM, digital modulation schemes,
amplitude, phase and frequency shift keying (ASK, PSK, FSK), QAM, MAP and ML decoding, matched filter receiver,
calculation of bandwidth, SNR and BER for digital modulation; Fundamentals of error correction, Hamming codes;
Timing and frequency synchronization, inter-symbol interference and its mitigation; Basics of TDMA, FDMA and
CDMA.
Section 8: Electromagnetics
Electrostatics; Maxwell’s equations: differential and integral forms and their interpretation, boundary conditions, wave
equation, Poynting vector; Plane waves and properties: reflection and refraction, polarization, phase and group velocity,
propagation through various media, skin depth; Transmission lines: equations, characteristic impedance, impedance
matching, impedance transformation, S-parameters, Smith chart; Waveguides: modes, boundary conditions, cut-off
frequencies, dispersion relations; Antennas: antenna types, radiation pattern, gain and directivity, return loss, antenna
arrays; Basics of radar; Light propagation in optical fibers.
************
contents
ELECTRONIC devices
ANALOG ELECTRONICS
DIGITAL ELECTRONICS
Chapter 6
Sample Chapter of GATE Electronics & Communication-2018, Volume-4
The output signal power of a power amplifier is several times A power BJT operating at a high current density, IE = 5 A
the input signal power. It is possible because is found to have a base current of 0.2 A and a base-input
resistance of 0.72 W.
n
(A) a positive feedback exists in the circuit
i
The base spreading resistance is
(B) a negative feedback is introduced in the circuit
o.
(A) 0.125 W
c
(C) the circuit converts a part of dc power from the dc
.
(B) 0.72 W
supply into ac signal power
(D) a step-up transformer is used in the circuit
i a (C) 0.595 W
o d (D) 0.835 W
. n
QUESTION 6.2
o p
sh
QUESTION 6.5
Conversion efficiency is defined as
In which of the following amplifier classes, the active device
(A) Power dissipated in the load divided by the power
operates for the whole of the input signal cycle ?
dissipated in the output stage of the amplifier.
(A) Class A
(B) Power dissipated in the load divided by the total power
in
supplied by the power supplies. (B) Class AB
(C) Decreasing gain with increasing frequency.
o.
(C) Class B
(D) First increasing and then decreasing gain with increasing
. c
(D) Class C
a
frequency
d i
n o
QUESTION 6.3
p. QUESTION 6.6
sh
If the load power is 3 mW and the dc power is 150 mW, the
(A) 50%
efficiency is
(B) 100%
(A) 0%
(C) 0%
(B) 2%
(D) 0.1%
(C) 3%
(D) 20%
QUESTION 6.8
(A) 20%
. c
(A) 40 mA
(B) 30%
i a (B) 5 mA
(C) 40%
o d (C) 18 mA
n
(D) 50% (D) 13 mA
p.
o
QUESTION 6.9 sh QUESTION 6.11
The parameters for the transformer-coupled common-emitter Consider the common-source circuit shown in figure below.
circuit shown in figure are VCC = 36 V and n1 : n2 = 4 : 1. If The maximum current, voltage and power ratings of the
in
the signal power delivered to the load is 2 W, what will be power transistor are: 5 A, 80 V and 25 W, respectively. If
.
the rms voltage across the load ? VDD = 80 V , what will be the value of RD ?
c o
a .
d i
n o
p.
o
sh _______ Ω
_______ Volt
Consider the class A power amplifier circuit given below. For the transistor in the common-emitter circuit shown in
figure below, the parameters are: b = 100 , PD,max = 2.5 W ,
VCE^sush = 25 V and IC,max = 500 mA .
. i n
o
What is the value of RB that locate the Q -point at the centre
c
of the load line ?
i
_______ kΩ that delivers the maximum power to the load ?
n
(A) 20.8 25
p. (B) 19.4 25
o (C) 25 19.4
sh
QUESTION 6.13
(D) 19.4 20.8
The common-emitter circuit shown in figure below is biased at
VCC = 24 V . The maximum transistor power is PD,max = 20 W
and the current gain is b = 80 .
. in
QUESTION 6.15
o
A student designs the emitter follower as shown in figure
c
.
below for a small-signal voltage gain of 0.7 and a load
i a
resistance of 4 W.
o d
. n
o p
sh
What will be the values of RB and base current IB such that
the maximum power is delivered to the load RL ?
RB (in kW) IB (in mA)
(A) 20.8 1.12
(B) 1.12 20.8 For a sinusoidal input, what is the maximum average power
that can be delivered to the load, RL without turning Q1 off ?
(C) 7.2 20.8
(D) 1.12 7.2 _______ Watt
. i n
o
If transformer has an 80% efficiency, then the maximum
. c
efficiency of the class A amplifier is
i a
(A) 50%
d
If the output voltage is to vary between + 10 V and - 10 V , (B) 33.33%
what are the minimum required values of IQ and R ?
n o (C) 24.6%
IQ ^minh (in mA) R (in W)
p. (D) 78.6%
o
(A) 113 100
sh
(B) 100 113
(C) 10 11.3
(D) 11.3 10 QUESTION 6.19
in
load with VCC = 2 V . If the bias current is 70 mA, the power
.
efficiency of the circuit will be
QUESTION 6.17
c o
.
_______ %
Consider the case AB stage amplifier shown in figure with
i a
d
Vthermal = 25 mV . If both transistors have reverse saturation
o
current IS = 10−15 A , the value of Quiescent current IC is
. n QUESTION 6.20
sh
(A) The nonlinearity that arises due to non-constant gain of
the amplifier.
(B) The amount of power that appears in the harmonic
components as a percentage of the power appearing in
the fundamental.
(C) The amount of crossover distortion.
(D) The sum of the voltages of the harmonics divided by the
voltage of the harmonic.
_______ µA
Consider the transformer-coupled common-emitter circuit Consider the class-A emitter follower shown in figure. All
shown in figure. The parameters are: VCC = 10 V , RL = 8 Ω the transistor are identical. Assume that VBE = 0.7 V in the
, n1 : n2 = 3 : 1, R1 = 0.73 kΩ , R2 = 1.55 kΩ and RE = 20 Ω . active region and that VCEsat = 0.2 V .
The transistor parameters are b = 25 and VBE ^onh = 0.7 V .
The amplitude of the sinusoidal input voltage is 17 mV.
. i n
c o
.
What is the maximum and minimum output voltage Vo for
a
which Q1 remains in the active region.
o
_______ mW (D) Vo^maxh = 2.86 V , Vo^minh =− 2.86 V
sh
QUESTION 6.22 QUESTION 6.24
in
The circuit of a class B push-pull amplifier is shown in Fig. Which of the following amplifier class suffers mainly from the
.
If the peak output voltage, Vo is 16 V, the power drawn from problem of crossover distortion ?
o
the dc source would be
c
(A) Class A
a . (B) Class B
d i (C) Class AB
n o (D) Class C
p.
o
sh QUESTION 6.25
. i n
Suppose vi = 0 . Which of the following condition guarantees
o
that Q1 is ON (i.e., VBE1 . 800 mV ) ?
c
The transfer characteristic (vo versus vi ) for the circuit is
a .(A) I1 RL $ 800 mV
d i (B) I1 RL 1 800 mV
o
I1
(C) RL $ 800 mV
. n 1 800 mV
I1
(D) RL
o p
sh QUESTION 6.28
in
are VTN = VTP = 0 and Kn = K p = 0.4 mA/V2 . Let RL = 5 kΩ
.
o.
. c
i a
o d
. n
o p
sh What is the maximum output voltage such that Mn remains
biased in the saturation region ?
(A) 8 V
(B) 10.25 V
(C) 12.5 V
(D) 20.5 V
Consider the circuit shown in figure below. Consider the class-AB stage amplifier shown in figure having
Vthermal = 25 mV .
. i n
c o
.
The maximum ac output power and the dc input power of For the npn transistor, IS = 10-15 A , and for pnp transistor
the amplifier are respectively
d
(A) 12.5 W, 15.5 W is vo = 0 V . If IB = 250 µA , what is the value of quiescent
o
current ICQ ?
n
(B) 3.25 W, 7.96 W
(C) 6.25 W, 3.25 W
p. _______ µA
o
(D) 6.25 W, 7.96 W
sh QUESTION 6.32
QUESTION 6.30 Consider the circuit of class AB stage amplifier shown in
in
figure below. The transistor parameters are:
.
Consider the class-AB stage shown below. The transistor
o
parameters are VTN = 0.75 V , VTP =− 0.75 V
c
K p = 300 µA/V2 = Kn
.
Kn = 250 µA/V2 , K p = 100 µA/V2
a
VTN = 0.75 V What is the value of Quiescent current ID ?
d
VTP =− 0.75 V
What is the value of quiescent current ID1 ?
n o
p.
o
sh
_______ µA
_______ µA
. i n
o
What is the value of ac output power ?
. c
(A) 47 mW
i a(B) 23.5 mW
o d (C) 94 mW
n
(D) 50 mW
.
At vo = 24 V , if the minimum current in the diodes D1 and
p
D2 is 25 mA, what will be the value of R1 ?
o
sh
(A) 18.52 W
(B) 98.2 W
QUESTION 6.37
(C) 53.97 W
(D) 5.3 W Consider the output stage shown in figure. Assume I1 is an
ideal current source and the load resistance, RL = 8 Ω . If the
in
output must achieve a small-signal voltage gain of 0.8, what
.
is the required bias current of Q1 and Q2 ?
o
(Neglect the incremental resistance of diodes D1 and D2 )
c
QUESTION 6.34
a .
A class-C amplifier is driven by a 200 kHz signal. The
d i
o
transistor is ON for 1 µs and the amplifier is operating over
n
100% of its load line. If IC^sath = 100 mA and VCE^sath = 0.2 V ,
what is the average power dissipation ?
p.
o
_______ mW
sh
QUESTION 6.35
_______ %
Consider the output stage depicted in figure. A push-pull stage is designed to deliver a peak swing of VP to
a load resistance of RL . What is the efficiency, if the circuit
delivers a swing of only VP /2 ?
_______ %
QUESTION 6.41
i n
a 10 V peak fundamental are the second and fourth. All
.
other harmonics are negligible small. If the total harmonic
o
distortion is 12% and the amplitude of the second harmonic
c
.
is 0.5 V peak, what is the amplitude of the 60 kHz harmonic
Assume that I1 is an ideal current source. The small-signal
a
?
i
voltage gain is (Neglect the incremental resistance of diodes
d
D1 and D2 )
o
_______ Volt
g R
n
(A) m L 1
.
gm 2
p
RL
^ m + gm h
(B)
o
g 1 2
sh
(C) ^gm1 + gm2h RL
QUESTION 6.42
^gm + gm h
(D)
1 2
in
designed to amplify this signal ?
.
(A) RC coupling
o
QUESTION 6.39
c
(B) Transformer coupling
.
Consider the composite stage shown in figure. Assume
a
(C) Direct coupling
i
b1 = 40 and b2 = 50 . In the circuit, the value of I1 so as to
d
obtain an output impedance of 1 W is (D) Double-tuned transformer
n o
p.
o
sh
QUESTION 6.43
_______ mA
QUESTION 6.49
QUESTION 6.45
o
temperature is TJ,max = 200cC , the ambient temperature is the transistor is 3c C/W . What is the maximum junction
c
25cC and the device-to-case thermal resistance is 3cC/W .
.
temperature ?
What will be the maximum permissible thermal resistance
between the case and ambient ?
i a _______ cC
d
_______
o
cC/W
n
p.
o QUESTION 6.50
QUESTION 6.46
sh
A BJT has a rated power of 15 W and a maximum junction
A power transistor for which Tj^maxh = 180cC can dissipate
50 W at a case temperature of 50cC if it is connected to a
heat sink using an insulating washer for which the thermal
temperature of 175cC . The ambient temperature is 25cC resistance is 0.6cC/W . What is heat sink temperature
and the thermal resistance parameters are: qsnk − amb = 4cC/W
in
necessary for safe operation at 30 W ?
and qcase − snk = 1cC/W . The actual power (in watts) that can
be safely dissipated in the transistor is
o. _______ cC
_______ Watt
. c
i a
o d QUESTION 6.51
. n
p
QUESTION 6.47 The amplifier in which the emitter and collector leads of one
o
transistor are connected to the base and collector leads of a
The power rating of a transistor can be increased by
sh
second transistor is called a
(A) raising the temperature (A) push-pull amplifier
(B) using a heat sink (B) Darlington amplifier
(C) using class-A operation (C) differential amplifier
(D) operating with no input signal (D) complementary amplifier
QUESTION 6.52 (B) Q1 ^184 µA, 7.85 Vh, Q2 ^325 µA. 7.16 Ah
Sample Chapter of GATE Electronics & Communication-2018, Volume-4
The follower design shown is intended to provide a relatively (C) Q1 ^325 µA, 6.04 Vh, Q2 ^184 µA, 7.85 Vh
high input resistance. Assume VCC = 5 V , VEB = 0.7 V , (D) Q1 ^184 µA, 6.04 Vh, Q2 ^186 µA, 7.85 Vh
VCE sat = 0.2 V (Note the transistor sizing indicated by the
notation # n ) **********
. i n
c o
a .
d i
What is the largest possible unclipped zero-average sine wave
o
output?
. n
(A) 9 V
p
(B) 4.1 V
o
sh
(C) 5.9 V
(D) 0.9 V
QUESTION 6.53
. in
Consider the direct coupled amplifier shown in figure.
c o
a .
d i
n o
p.
o
sh
SOLUTION
n
converts a part of it into useful ac signal power at the output.
i
b = IC = IE − IB
.
So a power amplifier is a dc to ac power convertor, whose
IB IB
o
action is controlled by the input signal.
c
= 5 − 0.2 = 24
.
0.2
i a re = VT
d
IE
SOLUTION 6.2
n o = 25 mV = 5 mΩ
.
5
rp = ^β + 1h re
p
Correct option is (B).
o = ^24 + 1h # 5m
Conversion efficiency
sh
^h h = Power drawn from dc source
maximum signal power output
= 0.125 Ω
Sine Conversion efficiency is defined as ratio of power Therefore, the base input resistance is
dissipated in the load to the total power supplied by the Rib = 0.72 Ω
power supplies. and the base spreading resistance is
in
Rbbl = Rib − rp
o.
= 0.72 − 0.125 = 0.595 Ω
. c
a
SOLUTION 6.3
o
= 3m = 0.02
150m
sh
% of h = 2%
SOLUTION 6.4
= 1 = 50%
n
2
. i
For signal ended class-A power amplifier maximum efficiency
o
is 50%.
c
a .
d i
n o SOLUTION 6.9
sh
vol^peakh = 36 V
Also, we have the voltage gain for transformer
Vf vlo = n1 = 4
So, b = =1
Vo vo n2 1
So the feedback in emitter follower is 100%.
in
vo = v o
l
or
4
So,
o. vo = 36 = 9 V
c
4
i
SOLUTION 6.7
Vrms = 9 = 6.36 V
d
2
o
Correct option is (C).
. n
o p
sh
SOLUTION 6.10
= 25 = 0.625 Amp
40
So, we obtain the resistance,
RD = VDD − VDS
ID
= 80 − 40 = 64 Ω
0.625
n
SOLUTION 6.12
i
gm R L
.
A v =
1 + gm R L
o
Correct answer is 11.3.
c
Substituting the given values in above expression, we get
.
For the Q -point to be at the centre of the load line, we have
gm1 ^8 Ωh
a
=
0.8
1 + gm1 ^8 Ωh
(IC = I1 ) VCE = VCC = 12 = 6 V
i
2 2
gm1 = 0.5
o d and IC = 12 − 6 = 60 mA
100
n
Since, the transconductance for the transistor is defined as
gm1 = IC = I1
VT VT
p. Also, IB = 60 mA = 1 mA
60
So, we get I1 = gm1 VT
o
sh
For dc analysis, we redraw the given circuit as
= 0.5 # 26 = 13 mA
SOLUTION 6.11
. in
Correct answer is 64.
c o
We redraw the given circuit as
a .
d i
o
Applying KVL in loop 1, we have
. n 12 - IB RB - 0.7 = 0
o p or RB = 12 − 0.7 = 11.3 kΩ
1m
sh
Since, we have VDD = 80 V SOLUTION 6.13
circuit as
Sample Chapter of GATE Electronics & Communication-2018, Volume-4
For the given circuit, the maximum power is delivered to the For maximum power delivered to the load, we have
load, when
. i n VCC = VCE^sush = 25 V
o
VCEQ = VCC = 24 = 12 V and VCEQ = VCC = 25 = 12.5 V
2 2
c
2 2
The maximum power is given as
a . ICm = VCC
i
So,
PQ^maxh = ICQ VCEQ RL
2PQ^maxh
. n Applying KVL in output loop, we get
p
So, ICQ =
VCC V − VCEQ 25 − 12.5
o
ICQ = CC =
RL 0.1k
sh
= 2 # 20 = 1.67 Amp
24
= 125 mA
Therefore, the base current is
So, IBQ = 125 = 1.25 mA
I 100
IBQ = CQ
β
Again, applying KVL in collector-base loop, we have
in
= 1.67 = 20.8 mA VCC - IBQ RB - VBE = 0
.
80
o
Applying KVL in output, we get So, RB = VCC − VBE
IBQ
c
VCC - ICQ RL - VCEQ = 0
VCC
a . = 25 − 0.7 = 19.4 kΩ
i
VCC − VCEQ VCC − 2 1.25m
So, R L = =
d
ICQ 1.67
= 24 − 12 = 7.2 Ω
n o
.
1.67
20.8m
sh
RB = 24 − 0.7 = 1.12 kΩ Correct answer is 0.45.
From the given data, we have
Av = 0.7 ,
R L = 4 Ω
For sinusoidal input, assume that
SOLUTION 6.14
vo = VP sin wt b ω = 2Tπ l
Correct option is (C). So, average power in the load resistor is
We draw the dc equivalent of the given common-emitter
_vo i IE1 = IQ + IL
2
i
100m
.
Now, we have
o
gm1 RL
Av = 0.7 =
c
1 + gm1 RL
Av
a .
i
gm1 =
^1 − Av h RL
or
=
0.7
^1 − 0.7h^4h
= 0.58 S
o d SOLUTION 6.17
p
So, IC1 = I1 = gm1 VT = 0.015 A For dc analysis, we redraw the circuit as
o
Hence, from equation (1), we get
sh
Pavg ^maxh = 1 I 12 RL
2
. in
c o
.
SOLUTION 6.16
p. VT ln IC + VT ln IC = 1.3
or
IS IS
o
(IS and VT are same for both transistor)
sh or 2VT ln IC = 1.3
IS
IC = 10−15 eb 2 # 25m l
1.3
So,
= 196 µA
PR + PI + PQ L
= 13 # 5m = 65 mW
where PR " Power across resistor RL
L
For dc input, inductor behaves as short circuit. Therefore, by PI " Power across current source
dc analysis, we have
VCC - VCEQ - 1k # 5m = 0
^PQ havg " Average power dissipation across transistor
Now, we obtain the power across resistor RL as
or VCEQ = 13 − 5 = 8 V
^VP / 2 h
2
2 2
The maximum ac power delivered to the transformer primary PR = V rms = = VP
L
RL RL 2RL
n
winding is
Plo = 1 VCEQ ICQ
16
. i
= 0.25 = 0.0156 W
o
2
c
The power across current source is
= 1 # 8 # 5m
.
2
a
PI =− IVEE = 70m # 2 = 0.14 W
i
= 20 mW
The average power dissipation across transistor is given as
Since, the transformer efficiency is 80%, so we obtain
o d ^PQ haverage = T1 #I
T
C VCE dt ...(2)
n
Po = hPlo 0
= 0.8 # 20m
p. where T = 2π
ω
= 16 mW
o
sh
Thus, we obtain the maximum efficiency as IC - IE = I1 + Vout
RL
AC power
Maximum efficiency = 100
Power delivered # VCE = VCC − Vout
= Po # 100
= VCC − VP sin wt
Pdc
Substituting the above expressions in equation (2), we get
in
= 16 mW # 100
^PQ haverage = T1
.
b I1 + RL sin ωt l
T
VP
65 mW #
o
0
= 24.6%
^VCC - VP sin ωt h dt ...(3)
a . = I1 bVCC − VP l
i
2
o d = 70m b 2 − 0.5 l
2
SOLUTION 6.19
. n = 0.1225 W
p
Thus, by substituting the obtained values in equation (1),
o
Correct answer is 5.6.
we get
sh
We draw the emitter follower circuit as
Power efficiency = 0.0156
0.0156 + 0.14 + 0.1225
= 0.0156 = 5.6%
0.2781
NOTE
For solving the integration of equation (3) note the following points:
1. The average value of sin ωt over one period of T is zero.
2. For eliminating the squared trigonometric terms, the trigonometric
relation is
sin 2 ωt = 1 − cos 2ωt
2
3. The average value of cos 2ωt over one period T is zero.
SOLUTION 6.20
where D 2 = A 2 ,
A1
c A1 m c A1 m c A1 m
THD = A2 2 + A 3 2 + A 4 2 + .....
6.80 − 0.70
0.496 + 26 # ^0.02h
=
i n
2 2 2
= A 2 + A 3 + A 4 + ....
.
= 6 mA
A1
o
So the total harmonic distortion signifies the amount of power So, the collector current is
that appears in the harmonic component as a percentage of
.
c ICQ = bIBQ = 150 mA
a
the power appearing in the fundamental.
i
Therefore, we obtain the circuit parameters as
RlL = a2 RL = ^3h2 8 = 72 Ω
d
n o and g m =
ICQ
.
VT
SOLUTION 6.21
sh
Correct answer is 345 mW. By using small signal model, the gain of circuit is
For dc analysis, we redraw the circuit as Av =− gm RlL =− 5.77 ^72h =− 415
. in
vlo = 3
vo 1
c o vo = v o
l
.
or
3
i a = 7.06 = 2.35 V
d
3
.
2
P L = 1 v o
p
By using voltage divider rule, we have 2 RL
VTH = R2
o ^2.35h2
sh
R1 + R 2 =
= 345 mW
2#8
=
1.55k 10
1.55k + 0.73k #
= 6.80 V
= 16 # 16
Po =
2RL 2#8 So, we have the equivalent circuit as
= 16 W
SOLUTION 6.23
. i n
From the circuit, the output voltage is
o
Vo = 15 − VCE^sath
. c
= 15 − 0.2 = 14.8 V
d
Q1 operates in active region is
o
Vo^maxh = 14.8 V ,
. n Vo^minh =− 2.86 V
in
=
= 2.86 mA Crossover distortion refers to the non-linearity in the output
.
5k
signal when the output signal crosses from positive to negative
o
This is a current mirror circuit. So, we have
or from negative to positive.
. c
ICQ3 = ICQ1 = ICQ2 = 2.86 mA Crossover distortion in class-B
a
Now, we consider the circuit for Q1 operating in cutoff. The
equivalent circuit is as shown below.
d i
n o
p.
o
sh
From the circuit, we have the output voltage
Vo =− 2.86m # 1k
=− 2.86 Volt
SOLUTION 6.25
SOLUTION 6.26
. i n
o
Correct option is (A).
c
We redraw the given push-pull stage as
a .
d i
n o
p.
o
sh
From the circuit, we obtain
vo = vi − 0.7 − 0.7
For the push-pull stage, we consider the condition when Q1 is
in
= vi − 1.4 V
ON and Q2 is OFF. From the circuit, we have
Again, for negative value of vi , we have the equivalent circuit
o. vo = vi − VBE1 ...(1)
c
Applying KCL at output node,
a
. IC1 = I1 + vo ...(2)
i
RL
n
IC1 $ 0
p. I1 + vo $ 0
RL
[from equation (2)]
o
sh
I1 + vi − VBE $ 0 [from equation (1)]
RL
I1 + 0 − VBE $ 0
RL
From the circuit, we obtain the output voltage
I1 RL - VBE $ 0
vo = vi + 0.7
Thus, the transfer characteristics is I1 RL $ 800 mV
. i n
o
The maximum peak output voltage is
c
Given the threshold voltage for the FETs,
.
Vout^peakh = VCEQ = VCC
2
a
VTN = VTP = 0 V
Now, for Mn to be biased in the saturation region, we have
VDS1 $ VDS ^sath
d i = 20 = 10 V
2
n
The maximum peak output current is
.
or VDS1 $ VGS1 - VTN
p
V
6VTN = 0@
I out^peakh = CEQ
or VDS $ VGS1 RL
o
sh
Applying KVL in loop 1, we get
= 10 = 1.25 A
10 - VDS1 - vo^maxh = 0 8
So, we obtain the ac output power as
or VDS1 = 10 − vo^maxh = VGS1 ...(1)
For the MOSFET, we have the current equation Pout = 1 ICQ VCC
4
ID = IL = Kn ^VGS − VTN h2
in
= 1 # 1.25 # 20
6VTN = 0@
.
or I D = I L = K n V 2
GS
4
or
vo^maxh
= Kn ^VGS h2
o
= 6.25 W
c
.
RL
The dc input power for the amplifier is
a
vo^maxh
i
or VGS = I V
R L Kn Pdc = CQ CC
d
π
o
vo^maxh
or 10 - vo^maxh = [substituting equation (1)] = 1.25 # 20
n
R L Kn
.
π
p
or v o2^maxh − 20.5vo^maxh + 100 = 0 = 7.96 W
^20.5h2 − 4 ^100h
o
sh
20.5 !
So, vo^maxh =
2
=8V
SOLUTION 6.30
= VBE1 + VEB2
1.25
= 22.8 µA
= 2.2 = 1.1 V
. i n
Correct answer is 9.38.
o
2
For dc analysis, we redraw the circuit as shown below
c
or VGS1 =− VGS2
= 1.1 V
a .
So, the drain current is obtained as
d i
ID1 = ID2
n o
= Kn ^VGS − VTH h2
sh
= 36.8 µA
in
SOLUTION 6.31
. Kn c TP Kp m
or VTN + I D1 + − V + I D2 = 2
Correct answer is 22.8.
c o
.
VTN − VTP + c
Kp m
The base current is zero because b is very large. So, IB flows or I D1 + ID1 = 2 (I = I )
D1 D2
Kn
a
through 5 kW resistor. For dc analysis, we redraw the given
circuit as
d i or 1
c 2.5 10−4 +
#
1
1 # 10−4 m
= 2 − ^1.5h
n o or ID1 = 0.5
.
163.3
sh
SOLUTION 6.33
SOLUTION 6.34
Sample Chapter of GATE Electronics & Communication-2018, Volume-4
Correct answer is 4.
The power dissipation during the ON time is
PD, on = IC^sath VCE^sath
The total time period of amplifier is
T = 1 = 5 µ sec
200k
Let the transistor be ON for a short time, ton and OFF for
the rest of the input cycle. Since, the amplifier is operating
over 100% of the load line, so we have
PD^avgh = ton PD, on
T
vo = 24 V ,
c
1µ
o
.
=
100m # 0.2
ID1 = ID2 = 25 mA 5µ #
i
= 4 mW
So, the load current is
iL = vo = 24 = 3 Amp
RL 8
o d
Applying KCL at the output terminal, we have
. n
I N = I L + I P
o p
sh
or IN - IL = 3 Amp SOLUTION 6.35
in
iD = 25 mA R L = 8 Ω
So, the current through resistance R1 is
o.
Since, the power dissipation in load RL is given by
c
2
IR1 = 25m + 73.2 = 98.2 mA PR = V P = 0.2
.
L
2RL
a
From transistor equation,
VBE = VT ln b iN l
IS
d i So, VP = 0.2 # 2 # 8 = 1.8 V
o
Therefore, the power efficiency for the push-pull stage is
n
= 0.026 ln b 3 obtained as
6 # 10−12 l
.
= 0.7004 V
PR
p
h = L
PR + PQ1^aveh + PQ2^aveh
o
Applying KVL in loop 1, we get L
sh
30 - IR1 R1 - VBE - vo = 0 V P2 /2RL
= 2
30 − ^24 + 0.7h
RL b p 4l
V P + 2VP VCC − VP
So, R 1 = 2R L
98.2m
=
0.2
8 bp p l
= 53.97 Ω
0.2 + 3 . 6 3 − 1.8
= 46.8%
SOLUTION 6.36
VP = VCC − VCE^sath
= 10 − 0.3
= 9.7 V
So, we obtain the output ac power as
^VP h2 9.7 # 9.7
Po = =
2RL 2 # 1k
= 47 mW
Given that ideal current source I1 is used for forward biasing
n
of the diode D1 and D2 . So, we have the equivalent circuit
. i
c o
SOLUTION 6.37
a .
Correct answer is 1.3.
d i
o
For the given output stage, the voltage gain is given by
n
Av = vo = ^gm1 + gm2h RL ...(1)
vi
p.
o
From the given data, we have
sh
Av = 0.8 ,
R L = 8 Ω ,
Since, the incremental resistance of diodes D1 and D2 is to be
and IC1 = IC2 = I Bias neglected, so we redraw the circuit for small signal as
Substituting these values in equation (1), we get
in
Av = b IC1 + IC2 l RL
.
VT VT
= 0.8 # 26m
2#8
od
= 0.8 # 26m
. n
p
2#8 From the circuit, we have
= 1.3 mA
o vi = v p1 = v p2
sh
Applying KCL at output, we get
io =− gm1 v p − gm2 v p
=−^gm1 + gm2h v p
^v p = vi h
SOLUTION 6.38 =−^gm1 + gm2h vi
So, the output voltage is
Correct option is (C).
We draw the equivalent circuit for the given output stage vo =− io RL
= ^gm1 + gm2h RL vi
Therefore, the voltage gain for the output stage is obtained SOLUTION 6.40
Sample Chapter of GATE Electronics & Communication-2018, Volume-4
as
Correct answer is 39.
Av = vo = ^gm1 + gm2h RL For a push pull stage, the operating mechanism is illustrated
vi
in the following figures.
SOLUTION 6.39
. i n
c o
For Positive Half Cycle
a .
d i
n o
p.
o
sh
The output resistance for the composite stage is given by
1
gm2 ^1 + b 1 + 1/b 2h
Rout =
Since, from the given data, we have Rout = 1 Ω , so by For Negative Half Cycle
substituting it in above expression, we get
in
So, the average power dissipation in Q1 is obtained as
1
.
gm2 = ( b1 = 40 , b2 = 50 ) T/2
1 + 40 + 1/50 PQ1^aveh = 1 #V I dt
o
CE C
T 0
= 0.024 S
. c
T 0 ^ CE
V − V lP sin wt hcV lP sin wt m dt
T/2
IC2 = 0.024 = 1
#
a
or RL
i
VT
d
T/2 T/2
= 1 VCC V lP sin wtdt − 1 V lP2 dt
or
b2 IB2
= 0.024
T 0 RL # T # 2R L
o
0
VT
n c # cos 2ωtdt = 0 m
T/2
.
So, IB2 = 0.012 mA (VT = 26 mV , b2 = 50 )
p
0
Applying KCL at output, we get 2
= VCC V P − V lP
l
o
I1 = IE2 + IC1 pR L 4RL
sh
= IC2 + IB2 + b1 IB1
= V lP bVCC − V lP l
RL p 4
= b2 IB2 + IB2 + b1 IC2
Similarly, we obtain power dissipation in Q2
PR SOLUTION 6.42
PR + PQ1^aveh + PQ2^aveh
Correct option is (C).
L
n
1/8RL Correct option is (D).
i
=
.
Negative feedback amplifier, increase the bandwidth of an
1/8RL + 1 b VCC − 1/8 l
RL pVP
o
amplifier so it is decrease the lower cutoff frequency and
c
1 increase the upper cutoff frequency of the amplifier.
.
=
1 + b CC − 1l
8 V
a
VP p
= p VP
8 VCC
d i
Since, VP - VC , so we obtain
n o
h = 39%
p.
o
sh
fl1 < f1
fl2 > f2
SOLUTION 6.41
in
Correct answer is 1.091.
n th harmonic distortion = %Dn = An # 100%
A1
o.
SOLUTION 6.44
For the given problem, total harmonic distortion is
. c
Correct option is (D).
a
2 2 Heat sinks are used to quickly transfer the heat generated in
i
THD = 0.12 = D + D ...(1)
2 4
the power transistor to the surroundings. The heat generated
d
Since, we have
in transistor in mainly at the junction.
D2 = A2 # 100
A1
n o So Heat sink reduce the junction temperature.
= 0.5 # 100 = 5%
10
p.
o
sh
Substituting it in equation (1), we get
= ^0.05h2 + D 42
0.0144
SOLUTION 6.45
So, D 4 = 0.0144 − 0.0025
Correct answer is 4.
= 0.1091 = 10.91%
Again, we have
Since, the 4th harmonic can also be given as TTTotal = θ Total PD
D 4 = A 4 = 0.1091 or Tdev - Tamb = PD ^q dev − case + q case − ambh
A1
So, A 4 = 1.091 V or 200 - 25 = 25 ^3 + θ case − ambh
This is the amplitude of 60 kHz ( = 4 # 15 kHz ) harmonic. So, θ case - amb = 4cC/W
TT = θPD
Correct answer is 10.
We obtain the temperature coefficient, So, TJ - TA = θ JA PD
T − Tamb TJ = 3 # 30 + 50
qdev - case = J,max Therefore,
PD, rated
= 140cC
= 175 − 25 = 10cC/W
15
Hence, the actual power dissipated in the transistor is
TJ,max − Tamb
PD =
q dev − case + q case − snk + q snk − amb
SOLUTION 6.50
= 175 − 25 = 10 W
10 + 1 + 4
n
Correct answer is 84.
. i
The ambient temperature and dissipated power in a transistor
o
are related as
c
TT = θPD
.
SOLUTION 6.47
a
Tj max − TC
i
So, θ JC =
PD
d
Correct option is (B).
o = 180 − 50
The power rating or power handling capability of a transistor
n
can be increased by using a heat sink with the heat sink, the 50
p.
transistor has a larger area to radiate heat into the air = 2.6cC/W
o
Again, we have
sh
TJ - TS = QJS PD
or TJ - TS = ^QJC + QCS h PD
in
Since, we know that
TT = θPD
o.
. c
So, Tj - TA = QJ − A PD
a
TJ^maxh − TA SOLUTION 6.51
i
Therefore, PD^maxh =
QJ − A
= 130 − 30 = 50 W
2
o d Correct option is (B).
n
Darlington configuration circuit is,
.
Thus, the maximum average collector current is obtained as
p
PD max
IC, max = ^ h
o
VCE
sh
= 50 = 2.5 Amp
(VCE = 20 V)
20
SOLUTION 6.49
So in Darlington configuration circuit emitter of one transistor
is connected to the base of other transistor, and collector are
Correct answer is 140.
connected each other.
The ambient temperature and dissipated power in a transistor
= 325 µA
The voltage at collector terminal of transistor Q1 is obtained
as
VC1 = 9 − 9.1k # 325µ
= 6.04 V
. i n
o
Applying KVL in loop 2,
c
9 - 12k # IE2 - VEB2 - 9.1 ^IC1 - IB2h = 0
i
In the circuit, the output signal is voltage limited by the
a So, IE2 = 9 − 0.7 − 6.06 = 186 µA
12k
d
saturation of Q1 . So, we obtain the output as
o
vo = VCC − VCE^sat h − VBE and IC2 = 184 µA
p
VC1 = 9 − 9.1 ^IC1 − IB2h
o
= 5 − 0.9
sh
= 9 − 2.94 = 6.06 V
= 4.1 V
VE1 =− 9 + IE1 ^24kh
= 10IRL
Thus, for large enough I , the largest possible zero-average =− 1.10 V
unclipped output is 4.1 V peak. VCE1 = 6.06 − ^− 1.10h
in
= 7.16 V
. c
=− 1.09 V
SOLUTION 6.53
d = 6.76 − ^− 1.09h
Correct option is (A).
o
For dc analysis, we redraw the circuit as
n
= 7.85 V
sh
Q2 ^184 µA, 7.85 Vh
**************