Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2

By D. A. Neamen Problem Solutions

______________________________________________________________________________________

Chapter 2

2.1
Sketch

6.625 10 3 10   6.54 10
34 10
5

1.90 1.6  10 
_______________________________________ 19

2.2 cm
Sketch or
_______________________________________   0.654  m
_______________________________________
2.3
Sketch
_______________________________________
2.6
2.4
h 6.625  10 34
2 x (a) p  
From Problem 2.2, phase   t  550  10  9

= constant  1.205  10 27 kg-m/s
Then
p 1.2045  10 27
2 dx
   1.32  10 3 m/s
dx    m 9.11  10 31
    0,    p    
 dt dt  2  or   1.32  10 5 cm/s
2 x h 6.625  10 34
From Problem 2.3, phase   t (b) p  

 440  10  9
= constant
Then  1.506  10 27 kg-m/s

2 dx dx    p 1.5057  10 27
    0,    p        31
 1.65  10 3 m/s
 dt dt  2  m 9.11  10
_______________________________________ or   1.65  10 5 cm/s
(c) Yes
2.5 _______________________________________
hc hc
E  h  
 E 2.7
Gold: E  4.90 eV (a) (i)

  4.90  1.6  10 19 J  p 2mE    
2 9.11  10 31 1.2  1.6  10 19 
So,
25
 5.915  10 kg-m/s


 6.625 10 3 10   2.54 10
34 10
5

 4.90 1.6 10 

19

h

6.625  10 34
 1.12  10  9 m
p 5.915  10  25
cm
o
or or   11 .2 A
  0.254  m
(ii)
Cesium: E  1.90 eV

 1.90  1.6  10 19 J  p   
2 9.11  10 31 12  1.6  10 19 
So,  1.87  10 24 kg-m/s
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
6.625  10 34 _______________________________________
  24
 3.54  10 10
1.8704  10 2.9
m hc
o E p  h p 
or   3.54 A p
(iii) Now
p 
2 9.11  10 31
120 1.6  10 19
 p e2
Ee  and
 5.915  10 24 kg-m/s 2m
6.625  10 34
2
h 1  h 
  1.12  10 10 m pe   Ee   
5.915  10  24 e 2m   e 

o
or   1.12 A Set E p  E e and  p  10 e
Then
2 2
hc 1  h  1  10h 
   
p 2m   e 
 2 m   p 
which yields
100h
p 
2mc
hc hc 2mc 2
Ep  E    2mc 
(b)  p 100h 100


2 9.11  10 31 3  10 8  2

p 
2 1.67  10 27
1.2 1.6 10 19
 
100
23
 2.532  10 kg-m/s  1.64  10 15
J  10.25 keV
34
6.625  10 _______________________________________
  23
 2.62  10 11
2.532  10
m
o 2.10
or   0.262 A h 6.625  10 34
_______________________________________
(a) p 
 85  10 10
2.8  7.794  10 26 kg-m/s

3 3 p 7.794  10 26

E avg  kT    0.0259   0.03885 eV    31
 8.56  10 4 m/
2 2 m 9.11  10
Now s
p avg  2mE avg or   8.56  10 6 cm/s

  
2 9.11  10 31  0.03885 1.6  10 19   E
1
2
m 2 
1
2

9.11  10  31 8.56  10 4  2

or
 3.33  10 21 J
p avg  1.064  10 25 kg-m/s
3.334  10 21
Now or E  2.08  10  2
1.6  10 19
h 6.625  10 34 eV
   6.225  10  9 m
p 1.064  10  25 (b) E 
1
2

9.11  10  31 8  10 3   2

or
o  2.915  10 23 J
  62.25 A
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
2.915  10 23
or E 19
 1.82  10  4 1.054  10 34
1.6  10 p   8.783  10  26 kg
10
eV 12  10

p  m  9.11  10 31 8  10 3   -m/s
 7.288  10 27
kg-m/s dE d  p2 
(ii) E   p     p
dp dp  2m 
h 6.625  10 35 2p pp
   9.09  10 8 m   p 
p 7.288  10  27 2m m
o Now p 2 mE
or   909 A
_______________________________________    
2 9  10 31 16 1.6  10 19 
2.11  2.147  10 24 kg-m/s
(a) so

E  h 
hc


6.625  10 34
3  10  8
 E 
 2.1466 10 8.783 10 
24 26

 1 10 10
9  10 31
 1.99  10 15 J  2.095  10 19 J
Now 2.095  10 19
E 1.99  10 15 or E   1.31 eV
E  e V  V   1.6  10 19
e 1.6  10 19 (b) (i) p  8.783  10 26 kg-m/s
V  1.24  10 4 V  12.4 kV (ii)
(b) p   
2 5  10 28 16  1.6  10 19 
p 2mE  
2 9.11  10 31
1.99 10  15
 5.06  10 23
kg-m/s
 6.02  10 23 kg-m/s
Then
E 
5.06 10 8.783 10 
23 26

h 6.625  10 34 5  10  28
   23
 1.10  10 11  8.888  10 21 J
p 6.02  10
m 8.888  10 21
or E  19
 5.55  10  2
or 1.6  10
o
eV
  0.11 A _______________________________________
_______________________________________
2.14

 1.054  10 34
p    1.054  10  32
x 10  2
kg-m/s
2.12 p 1.054  10 32
 1.054  10 34 p  m    
p   m 1500
x 10  6   7  10 36
m/s
 1.054  10 28 kg-m/s _______________________________________
_______________________________________

2.13
(a) (i) px  
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

2.15  2 1 

Et    V  x   1  2   j 1  2
t 
(a)
 t

1.054  10 34 Dividing by 1  2 , we find

t   8.23  10 16

 0.8 1.6  10 19   2  1  2 2
  
1  2 1
 
2 1 2 

 2 x 1 x 2 1 2 x x 
2
s 2m
 1.054  10 34
(b) p    1 2 1 1 
x 1.5  10 10  V  x   j   
 7.03  10 25 kg-m/s  2 t 1 t 
_______________________________________

2.16 Since 1 is a solution, then

(a) If 1  x, t  and 2  x, t  are   2 1  2 1 1 1
solutions to    V  x   j  
2m 1 x 2
1 t
Schrodinger's wave equation, then
Subtracting these last two equations, we have
2  1  2 2 2 1 2 
 
   1  x, t  1  x, t   
2 2
 V  x  1  x, t   j  2 x 1 2 x x 
2
 2m
2m x 2
t
and 1 2
 j  
2 t
  2  2  x, t  2  x, t 
2
  V  x   2  x, t   j Since 2 is also a solution, we have
2m x 2
t
  2 1  2 2 1 2
Adding the two equations, we obtain    V  x   j  
2 2 2m 2 x 2
2 t
  1  x, t   2  x, t   Subtracting these last two equations, we obtain
2m x 2
 V  x   1  x, t   2  x, t   2

2

1 2
  V  x  0
2m 1 2 x x
 This equation is not necessarily valid, which
 j  1  x, t   2  x, t  
t means that 1 2 is, in general, not a
which is Schrodinger's wave equation. So solution
1  x, t   2  x, t  is also a solution. to Schrodinger's wave equation.
_______________________________________
(b) If 1  x, t   2  x, t  were a solution
2.17
to 3
 x 
Schrodinger's wave equation, then we
A dx  1
2
cos 2 
could write 1  2 
2 2
  1  2   V  x  1  2   x sin  x    3
A2   1
2m x 2 2 2  1

 j  1  2   3   1 
t A2      1
which can be written as  2  2 
1
so A 2 
  2   2 2  2 1 1 2  2
1   2  2  
2m  x 2 x 2 x x 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
1 ao
or A  2
  2x 
2

2
 exp 
_______________________________________ a  a  dx
o ao  o 
4
2.18
1 / 2 2   ao    2 x  ao 2

 nx  dx  1    exp 
A 
2 2
cos ao  2   a o  ao 4
1 / 2
or
 x sin  2nx   1 / 2
A2   1    1 
2 4n  1 / 2 P    1 exp  1  exp 
  2 
 1  1  1
A 2       1  A 2   which yields
 4  4  2 P  0.239
or A  2 (c)
ao 2
_______________________________________  2   x 
P 
0

 a o
exp  dx

 a o 
ao
2   2x 
2.19

ao  exp
0
 dx
a o 


   dx  1
*
Note that 2   ao    2 x  ao
0    exp 

Function has been normalized. ao  2   ao  0
(a) Now    1  exp  2   1
ao 2
which yields
4
 2   x  P  0.865
P 
0

 a o
exp  dx

 a o  _______________________________________
ao
4 2.20
2   2x 

2

 exp  dx

P     x dx
ao  ao  a/4
0 2  x
  a  cos
2
(a)  dx
2   ao    2x  ao 4
 2 
   exp 

0

ao  2   ao  0   2x   a / 4
or  sin 
 2  x  a 
  
   2a o  a  2   
  1 4   0
P    1 exp   1  1  exp  
 a 

  4a o    2 
 a   
which yields    sin   
P  0.393 2 4  2 
   
(b)  a  2  4  
ao 2    
 2   a  
2
  x 
P  
a
 o
exp
a
 dx

 o 
 2   a 1 a  
   
ao
4
 a  8 4 
or P  0.409
a/2
2  x 
(b) P    a  cos
2
 dx
a/4
 a 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
  2x   a / 2   4x   a / 2
 sin    sin  
 2  x  a   2  x  a 
     
 a  2     a  2  2  
 4   a / 4  4   a/4
 a    a  
  
 sin     
 2  a sin    a  2  
 2   a sin  2   a 

sin    
          
 a   4  4  8  4    a  4  8  8  8  
      


 a 
 
 a 

  a   a  
or P  0.25
1 1 1  a / 2
 2  0   2 2  2x 
 
 4 8 4 (c) P     sin 
a  a 
dx
or P  0.0908 a / 2
a / 2
2 2  x 
  4x    a / 2
(c) P     cos 
a  a 
dx 
 2  x
sin 
 a 

a / 2   
  2x    a / 2  a  2  2  
sin    4   a / 2
   a  
 2  x  a 
  
 a  2  4  
    a / 2  
  a    
 2  a sin  2    a  sin   2  
     
 a  4  8   4   8  
     
    a   a  
 
 2   a sin      a  sin      or P  1
    
 a  4  4   4   4   _______________________________________
     
  a   a  
or P  1 2.22
_______________________________________  8  10 12
(a) (i)  p    10 4 m/s
k 8  10 8
2.21 or  p  10 6 cm/s
a/4
2  2x 
(a) P    a  sin
2
 dx 2 2
0
 a     7.854 10  9 m
k 8  10 8
  4x   a / 4
 sin  o
 2  x  a  or   78.54 A
  
 a  2  2   
(ii) p  m  9.11  10 31 10 4  
 4   0
  a    9.11  10 kg-m/s 27

  
  1 1 2
 
 2  a sin    
E  m 2  9.11  10  31 10 4
    2 2
 a  8  8  
    4.555  10 23 J
  a 
or P  0.25
4.555  10 23
or E  2.85  10  4
a/2 1.6  10 19
2  2x 
(b) P    a  sin
2
 dx eV
 a 
a/4  1.5  10 13
(b) (i)  p    10 4 m/s
k  1.5  10 9
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
or  p  10 cm/s
6

2 2
2 2
   4.19  10  9 k   4.32  10 8 m
k 1.5  10 9  1.454  10 8
1
m
o   k   4.32  10 8  5  10 4 
or   41.9 A
 2.16  1013 rad/s
(ii) p  9.11  10 27 kg-m/s
(b) 
p  9.11  10 31 10 6  
E  2.85  10 4 eV 25
_______________________________________  9.11  10 kg-m/s
34
6.625  10
2.23   25
 7.27  10 10
9.11  10
(a)   x, t   Ae  j  kx  t  m

(b) E   0.025 1.6  10 19  1
 m 2
2
k
2
 8.64  10 9 m
7.272  10 10
1


1
2

9.11  10  31  2    8.64  10 9 10 6   8.64  10 15
rad/s
so   9.37  10 4 m/s  9.37  10 6 _______________________________________
cm/s
For electron traveling in  x direction, 2.25
  9.37  10 6 cm/s
 2 n 2 2 
n 2 1.054  10 34  2  2


p  m  9.11  10 31  9.37  10 4   En 
2ma 2


2 9.11  10  31 75  10 10   2

 
26
 8.537  10 kg-m/s
E n  n 2 1.0698  10 21 J
h 6.625  10 34 or

p

8.537  10  26
 7.76  10  9
En 

n 2 1.0698  10 21 
m 1.6  10 19

or E n  n 2 6.686  10 3 eV 
2 2 Then
k   8.097  10 8 m
 7.76  10 9
E1  6.69  10 3 eV
1
E 2  2.67  10 2 eV
  k    8.097  10 8 9.37  10 4  E 3  6.02  10 2 eV
or   7.586  1013 rad/s _______________________________________
_______________________________________
2.26
(a)
2.24
(a) 
p  m  9.11  10 31 5  10 4   En 
 2 n 2 2

n 2 1.054  10 34  2   2

 4.555  10 26 kg-m/s 2ma 2 

2 9.11  10  31 10  10 10   2

34

 n 2 6.018  10 20 J 
h 6.625  10 or
   1.454  10 8
p 4.555  10  26
En 

n 2 6.018  10 20
 n 2  0.3761 e

m
1.6  10 19
V
Then
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
E1  0.376 eV _______________________________________
E 2  1.504 eV
2.29
E 3  3.385 eV Schrodinger's time-independent wave
hc equation
(b)  
 2  x  2m
E  2  E  V  x    x   0
E   3.385  1.504 1.6  10 19   x 2 
 3.01 10 19 J We know that
a a
  x   0 for x  and x 
2 2
We have


6.625 10 3 10  34 8
V  x   0 for
a
x
a
3.01 10 19 2 2
 6.604  10 7 m
or   660.4 nm so in this region
_______________________________________
 2  x  2mE
 2   x  0
2.27 x 2 
 2 n 2 2 The solution is of the form
(a) E n    x   A cos kx  B sin kx
2ma 2
where

15  10 3


n 2 1.054  10 34  2
2 k
2mE
2

2 15  10 3 1.2  10  2   2
Boundary conditions:

15  10 3  n 2 2.538  10 62    x   0 at x 
a
, x
a
or n  7.688  10 29
2 2
(b) E n 1  15 mJ First mode solution:
(c) No  1  x   A1 cos k 1 x
_______________________________________ where
  2 2
2.28 k1   E1 
For a neutron and n  1 :
a 2ma 2
Second mode solution:
 2  x   B 2 sin k 2 x
E1 
 2 2

1.054  10  2 34 2
 where
2ma 2 
2 1.66  10  27 10 14   2
2 4 2  2
13 k2   E2 
 3.3025  10 J a 2ma 2
or Third mode solution:
E1 
3.3025  10 13
 2.06  10 6 eV  3  x   A3 cos k 3 x
19
1.6  10 where
For an electron in the same potential well: 3 9 2  2
E1 
1.054 10   34 2 2 k3 
a
 E3 
2ma 2
2 9.11  10 10   31 14 2 Fourth mode solution:
 6.0177  10 10 J
 4  x   B 4 sin k 4 x
or where
6.0177  10 10 4 16 2  2
E1   3.76  10 9 eV k4   E4 
1.6  10 19 a 2ma 2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
_______________________________________ n
k z  z , n z  1, 2, 3...
2.30 a
The 3-D time-independent wave equation in From Equation (1) above, we have
cartesian coordinates for V  x, y , z   0 is:  k x2  k y2  k z2  k 2  0
or
 2  x, y , z   2  x, y, z   2  x, y, z  2mE
  k x2  k y2  k z2  k 2 
x 2 y 2 z 2 2
so that


2mE
  x, y , z   0 E  E nx n y nz 
 2 2 2
2

n x  n 2y  n z2 
2 2ma
Use separation of variables, so let _______________________________________
  x, y , z   X  x Y  y  Z  z 
Substituting into the wave equation, we 2.31
obtain (a)
 2  x, y   2  x, y  2mE
    x, y   0
x 2
y 2
2
Solution is of the form:
  x, y   A sin k x x  sin k y y
2 X  2Y 2Z We find
YZ  XZ  XY   x, y 
x 2 y 2 z 2  Ak x cos k x x  sin k y y
x
2mE  2  x, y 
 XYZ  0   Ak x2 sin k x x  sin k y y
2 x 2
2mE
Dividing by XYZ and letting k 2  ,   x, y 
2  Ak y sin k x x  cos k y y
we y
find  2  x, y 
(1)   Ak y2 sin k x x  sin k y y
y 2
1  2 X 1  2Y 1  2 Z
     k2 0 Substituting into the original equation, we
X x 2 Y y 2 Z z 2 find:
We may set 2mE
(1)  k x2  k y2  0
1  X 2
 X 2
2
  k x2   k x2 X  0
X x 2 x 2
From the boundary conditions,
o
Solution is of the form A sin k x a  0 , where a  40 A
X  x   A sin  k x x   B cos k x x 
nx
Boundary conditions: X  0   0  B  0 So k x  , n x  1, 2, 3, ...
a
nx
and X  x  a   0  k x  Also A sin k y b  0 , where b  20 A
o

a
where n x  1, 2, 3.... n y
So k y  , n y  1, 2, 3, ...
Similarly, let b
1  2Y 1 2Z Substituting into Eq. (1) above
   k 2
y and   k z2
Y y 2  2  n x  n 2y  2 
2 2
Z z 2 
E nx n y  
Applying the boundary conditions, we find 2m  a 2 b 2 
n y
ky  , n y  1, 2, 3.... (b)Energy is quantized - similar to 1-D result.
a There can be more than one quantum state
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
per given energy - different than 1-D result. 2m
_______________________________________ k2  2
 E  VO 

2.32 Term with B 2 represents incident wave and
(a) Derivation of energy levels exactly the
term with A2 represents reflected wave.
same as in the text
Region I, x  0
(b) E 
 2 2 2
n 2  n12    2 1  x  2mE
2ma 2   1  x  0
For n 2  2, n1  1 x 2
2
Then General form of the solution is
3  2 2
E   1  x   A1 exp jk1 x   B1 exp  jk1 x 
2ma 2 where
o
(i) For a  4 A 2mE
k1 
E 

3 1.054  10 34 2
  2 2

2 1.67  10  27 4  10 10   2 Term involving B1 represents the
transmitted wave and the term involving A1
 6.155  10 22 J
represents reflected wave: but if a particle is
or
transmitted into region I, it will not be
6.155  10 22 reflected so that A1  0 .
E   3.85  10  3 eV
1.6  10 19 Then
 1  x   B1 exp  jk 1 x 

 2  x   A2 exp jk 2 x   B 2 exp  jk 2 x 
(b)
Boundary conditions:
(1)  1  x  0    2  x  0 
(ii) For a  0.5 cm  1  2
(2) 
x x 0 x x0

E 

3 1.054  10  34
 2
 2
Applying the boundary conditions to the
solutions, we find

2 1.67  10  27
 0.5  10  2 2
B1  A2  B 2
36
 3.939  10 J k 2 A2  k 2 B 2   k 1 B1
or

3.939  10 36 Combining these two equations, we find

E   2.46  10 17 eV
1.6  10 19  k  k1 
_______________________________________ A2   2   B 2
 k 2  k1 
2.33  2k 2 
(a) For region II, x  0 B1     B 2
 k 2  k1 
 2 2  x  2m
  E  VO  2  x   0 The reflection coefficient is
x 2
2 A2 A2*  k  k1 
2

General form of the solution is R   2 


B 2 B 2  k 2  k1
*

 2  x   A2 exp jk 2 x   B 2 exp  jk 2 x  The transmission coefficient is
where
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

T  1 R  T 
4k 1 k 2  0.1 
T  16 1 
0.1 
 
 exp  2 4.85976  10 4  10
9 10
 
 k1  k 2  2  1.0  1.0 
_______________________________________  0.0295
(b) For a  12  10 10 m
2.34
 2  x   A2 exp  k 2 x  T  16
 0.1 
1 
0.1 
 
 exp  2 4.85976  10 12  10
9 10

 1.0  1.0 
  x
2
 1.24  10 5
P  exp  2k 2 x 
A2 A2* (c) J  N t e , where N t is the density of
transmitted electrons.
2m V o  E  E  0.1 eV  1.6  10 20 J
where k2 
2

1
m 2 
1

9.11  10  31  2 

 
2 9.11  10 31  3.5  2.8 1.6  10 19   2 2
   1.874  10 5 m/s
1.054  10  34
 1.874  10 7 cm/s
k 2  4.286  10 9 m 1

  
o
(a) For x  5 A  5  10 10 m 1.2  10 3  N t 1.6  10 19 1.874  10 7
P  exp  2k 2 x  N t  4.002  10 8 electrons/cm 3
Density of incident electrons,
 
 exp  2 4.2859  10 9 5  10 10   Ni 
4.002  10 8
 1.357  10 10 cm
 0.0138 0.0295
o 3
(b) For x  15 A  15  10 10 m
_______________________________________

 
P  exp  2 4.2859  10 9 15  10 10   2.36
 2.61 10 6  E  E 
T  16 1   exp  2k 2 a 
 
o
(c) For x  40 A  40  10 10 m  VO  VO 
(a) For m   0.067  m o
 
P  exp  2 4.2859  10 9 40  10 10   2 m V O  E 
15
k2 
 1.29  10 2
_______________________________________
    
1/ 2
 2 0.067 9.11  10
  0.8  0.2 1.6  10 19
 31

2.35
 E  

 
1.054  10 34
2
 

E
T  16 1   exp  2k 2 a  or
 
 Vo  Vo  k 2  1.027  10 9 m 1
2m V o  E  Then
where k2   0.2  0.2 
2 T  16 1  
 0 . 8  0.8 


 
2 9.11  10 31 1.0  0.1 1.6  10 19     
 exp  2 1.027  10 9 15  10 10 
 34
1.054  10 or
T  0.138
k 2  4.860  10 9 m
(b) For m  1.08  m o
or 1

(a) For a  4  10 10 m

Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
2.38
Region I  x  0  , V  0 ;
Region II  0  x  a  , V  VO
k2 = Region III  x  a  , V  0
(a) Region I:

    
1/ 2
 21.08 9.11  10
  31
 0.8  0.2 1.6  10 19  1  x   A1 exp jk1 x   B1 exp  jk1 x 


 1.054  10 34 2
 
 (incident) (reflected)
or
k 2  4.124  10 9 m 1
Then
 0.2  0.2  where
T  16 1  
 0.8  0.8  2mE
k1 
2
 
 exp  2 4.124  10 9 15  10 10   Region II:
or
T  1.27  10 5  2  x   A2 exp k 2 x   B 2 exp  k 2 x 
_______________________________________ where
2 m V O  E 
2.37 k2 
 E  E  2
T  16 1   exp  2k 2 a 
  Region III:
 Vo  Vo 
2m V o  E   3  x   A3 exp jk 1 x   B3 exp  jk 1 x 
where k2 
2 (b)
In Region III, the B3 term represents a


 
2 1.67  10 27 12  1  10 6  1.6  10 19   reflected wave. However, once a particle
is transmitted into Region III, there will
 34
1.054  10 not be a reflected wave so that B3  0 .
 7.274  10 m 1 14
(c) Boundary conditions:
(a) At x  0 :  1   2 
A1  B1  A2  B 2
 1 
T  16 1 
1 
 exp  2 7.274  10 10
14 14
    d 1 d 2
 
 12  12 
dx dx
 1.222 exp  14.548
 5.875  10 7 jk 1 A1  jk 1 B1  k 2 A2  k 2 B 2
(b)
At x  a :  2   3 

T  10  5.875  10 7 
A2 exp k 2 a   B 2 exp  k 2 a 
 
 1.222 exp  2 7.274  10 14 a  
 A3 exp jk1 a 

2 7.274  10 14
 
a  ln
1.222
6

 d 2 d 3
 5.875  10   
dx dx
or a  0.842  10 14 m

k 2 A2 exp k 2 a   k 2 B 2 exp  k 2 a 
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

 jk1 A3 exp jk 1 a 
A1 A1* 
A3 A3*
k 2

 k 12 exp 2k 2 a 
The transmission coefficient is defined as  4k 1 k 2  2 2

A3 A3*
T  Substituting the expressions for k 1 and
A1 A1* k 2 , we find
so from the boundary conditions, we want
to solve for A3 in terms of A1 .
2mVO
k12  k 22 
Solving 2
for A1 in terms of A3 , we find and
 2mVO  E    2mE 
 jA3 k12 k 22    2 
A1 
4k 1 k 2
 k 2
2 
 k 12  exp k 2 a   exp  k 2 a    2   
2
 2m 
  2  VO  E  E 
 2 jk1 k 2  exp k 2 a   exp  k 2 a     
2
 2m   
 exp jk 1 a 
E
  2  V O  1   E 

   VO 
We then find
Then

2
 2mVO 
A3 A  *
3
2
 exp 2k 2 a 
  
A1 A1 
*

 2m  2
 E  
16 2  VO 1   E  

    VO  

A1 A1* 
A3 A3*
 k 2

 k 12  exp k 2 a  
A3 A3*
 4k 1 k 2  2 2
 E  E 
16 1   exp  2k 2 a 
 exp  k 2 a    
2
 VO  VO 
Finally,
 4k k  exp k 2 a   exp  k 2 a  
2 2
1 2
2
 A3 A3*  E  E 
We have T   16 1   exp  2k 2 a 
*  V 
A1 A  VO  
2 m V O  E  1 O

k2  _____________________________________
2
If we assume that VO  E , then k 2 a
will 2.39
be large so that
Region I: V  0
exp k 2 a   exp  k 2 a 
 2 1  x  2mE
We can then write   1  x  0 
x 2 2
 k 
*
A3 A
 k12  exp k 2 a    1  x   A1 exp jk1 x   B1 exp  jk1 x 
2
A1 A1*  3 2

 4k 1 k 2  2 2

incident reflected


where
 4k12 k 22  exp k 2 a  
2

which becomes
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
2mE  2  3
k1   
2 x x
Region II: V  V1
k 2 A2 exp jk 2 a   k 2 B 2 exp  jk 2 a 
 2 2  x  2m E  V1 
  2  x  0 
x 2 2  k 3 A3 exp jk 3 a 
But k 2 a  2n 
 2  x   A2 exp jk 2 x   B 2 exp  jk 2 x 
exp jk 2 a   exp  jk 2 a   1
transmitted reflected
where Then, eliminating B1 , A2 , B 2 from the
2m E  V1  boundary condition equations, we find
k2  k3 4k12 4k 1 k 3
 2
T  
k1  k1  k 3  2  k1  k 3  2
Region III: V  V 2
_______________________________________
 2 3  x  2 m E  V 2 
  3  x  0  2.40
x 2 2
(a) Region I: Since VO  E , we can write
 3  x   A3 exp jk 3 x 
 2 1  x  2 m V O  E 
 1  x  0
transmitted
where

x 2
2
2 m E  V 2  Region II: V  0 , so
k3  2
 2 2  x  2mE
 2  x  0


There is no reflected wave in Region III. x 2
2
The transmission coefficient is defined as:
Region III: V     3  0
The general solutions can be written,
 3 A3 A3* k 3 A3 A3*
T    keeping in mind that  1 must remain
1 A1 A1* k1 A1 A1*
finite for x  0 , as
From the boundary conditions, solve for A3  1  x   B1 exp k1 x 
in terms of A1 . The boundary conditions
are:  2  x   A2 sin  k 2 x   B 2 cos k 2 x 
At x  0 :  1   2 
 3  x  0
A1  B1  A2  B 2
where
 1  2
  2m V O  E 
x x k1  and
k 1 A1  k 1 B1  k 2 A2  k 2 B 2 2
At x  a :  2   3  k2 
2mE
A2 exp jk 2 a   B 2 exp  jk 2 a  2
(b) Boundary conditions
 A3 exp jk 3 a  At x  0 :  1   2  B1  B 2

 1  2
  k1 B1  k 2 A2
x x
At x  a :  2   3 

A2 sin  k 2 a   B 2 cos k 2 a   0
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
or

 mo e
B 2   A2 tan  k 2 a  3
(c)
k
k1 B1  k 2 A2  A2   1

 B1

4o 2 n
(eV)

 k2
and since B1  B 2 , then

2 22
k 
A2   1  B2

 k2 



 9.11  10 31 1.6  10 19  3

4 8.85 10 12

 21.054 10 
2  34 2
n2

From B 2   A2 tan k 2 a , we can write  or
k  13.58
En 
B 2   1  B 2 tan  k 2 a  n2
(eV)
 k2  n  1  E1  13.58 eV
or
n  2  E 2  3.395 eV
k 
1   1  tan  k 2 a  n  3  E 3  1.51 eV
 k2  n  4  E 4  0.849 eV
This equation can be written as _______________________________________
V E  2mE 
1  O  tan  2
 a 2.42
E    We have
or 3/ 2
1  1  r 
E  2mE   100    
 exp 

  tan   a   ao   ao 
VO  E  
2
 and
This last equation is valid only for specific P  4 r 2 100 100
*

values of the total energy E . The energy 3

levels are quantized. 1  1    2r 
 4 r  2
   exp
  a 

_______________________________________   ao   o 
or
2.41

 mo e 4
4   2r 

En 
P  r 2 exp 

 ao  3
 ao 

4o 2 n
(J)
To find the maximum probability
2 22 dP  r 
0
dr

  2  2   2r 

4
   
r exp 

 ao  3

 a o   ao 

  2r  
 2r exp 

 a o  
which gives
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
r
0  1  r  ao 3/ 2
ao  1   1  r 

  
  exp 0
  
or r  a o is the radius that gives the greatest     ao   ao 
probability. where
_______________________________________

2.43
 oem 
4 2
E  E1  2 2  2
 100 is independent of  and  , so the
wave

4o 2 2 oam o
equation in spherical coordinates reduces to

1   2   2m o
 r   2  E  V  r    0
r 2 r  r  
where Then the above equation becomes
e 
2 2
V r   3/ 2
   r    1
4 o r m o a o r 1  1   r2 
  
 exp   2
  2 r  
For   ao    a o   r a o  ao 
3/ 2
1  1  r 
 100    
 exp 

  ao   ao  2m o    2  2 
     0
 2  2m o a o m o a o r 
Then
3/ 2
 100 1  1   1  r 
   

   
 a  exp a  or
r   ao   o  o  3/ 2
1  1     r 
so   
 exp 

5/2   ao    a o 
 100 1  1   r 
r 2
   
 r 2 exp 

r   ao   ao  
  2 1   1 2 
  2  2   0
We then obtain
5/2
 a o r a o  a o a o r 
 
  2  100  1  1  
which gives 0 = 0 and shows that 100 is
 r     

r  r    ao  indeed a solution to the wave equation.
_______________________________________
  r   r2    r  2.44
 2r exp 
 
 exp
  a 

 ao   ao All elements are from the Group I column of
   o 
the periodic table. All have one valence
Substituting into the wave equation, we have electron in the outer shell.
_______________________________________

5/2
1  1    r  r2   r 
  
 2r exp 
 exp 

r2   ao    a o  a o  a o 
2m o  2 
  E  
2  mo a o r 