(Assignment No: 4 & 5) Summation Date: 2074/11/25

1. Explain the V-I characteristics of a power thyristor and illustrate its application in power circuit. How
an optp-coupler can be used to isolate the gate signal generator and power circuit?
2. What is latching current and holding current?
3. Draw circuits for generation of short pulse and long pulse for thyristor triggering. Explain the
functions of various components of these
4. Explain di/dt and dv/dt protection of thyristor.
5. Fig. shows the single phase half-wave controlled rectifier with dv/dt protection provided by a snubber
circuit. Calculate the value of Rs and Cs so that the dv/dt does not exceed 200 V/µsec. The limiting
value of the charging current to turn on the thyristor is 5 mA.

6. For the circuit shown figure, calculate the max values of di/dt and dv/dt for SCR.

7. Explain the V-I characteristics of power transistor and illustrate how it can be used as a switch?
8. Sketch the CE-configuration transistor output characteristics of a transistor and explain the
significance of these curves. Indicate the active, cut-off and saturation regions.
9. Describe the switching characteristics of power MOSFET. What is meant by threshold gate voltage?
10. What is an IGBT? Why they are becoming popular in their application to controlled converter
11. What is GTO? Discuss its operation.
12. Describe the basic structure of TRIAC. Draw and discuss its volt-ampere characteristics