4.

5 Exercise Problems

Problem 1. Find the bias point of the transistor (Si BJT with β = 100 and VA → ∞).
Problem 2. Find parameters and state of transistor of problem 1 if β = 200.
Problems 3-6. Find the bias point of the transistor (Si BJTs with β = 200 and VA → ∞).
Problems 7-8. Find the bias point of the transistor (Si BJTs with β = 100 and VA → ∞).
Problem 9. In the circuit below with a SI BJT (VA → ∞), we have measured VE = 1.2 V.
Find BJT β and VCE .
15 V

2.5 V 15 V 9V 34 k 1k

vo
vi
20k 3k 18k
50k 4.7 µ F
vi
vo 270
0.47 µ F
30k 100k
5.9 k
500 5k 22k 1k 47 µ F
240

Problem 1 Problem 3 Problem 4 Problem 5

16 V
2.5 V
30k 1.5k
3V 5V
vo 18k 500
510nF 2.3k 5k
vi
Q1 VE

32k
6.2k 510 30k
Q2 5k
2.3k

−3V − 5V

Problem 6 Problem 7 Problem 8 Problem 9

Problem 10. Find VE and VC (SI BJT with β → ∞ and VA → ∞).
Problem 11. Find R such that VDS = 0.8 V (kn′ (W/L) = 1.6 mA/V2 , Vtn = 0.5 V, and
λ = 0).
Problem 12. Find the bias point of the transistor below (kp′ (W/L) = 1 mA/V2 , Vtp = −1 V,
and λ = 0.
Problem 13. Find VD and VS (kn′ (W/L) = 1 mA/V2 , Vtn = 2 V, and λ = 0).

ECE65 Lecture Notes (F. Najmabadi), Spring 2010 4-27

4.6 Solution to Selected Exercise Problems

Problem 1. Find the bias point of the transistor (Si BJT with β = 100 and VA → ∞).
This is a fixed bias scheme (because there is no RE ) with a voltage divider 2.5 V
providing VBB (It is unstable to temperature changes, see problem 2).
20k
Assuming BJT (PNP) in the active state and replacing R2/R1 voltage
divider with its Thevenin equivalent:
30k
500
30
RB = 30 k k 20 k = 12 k, VBB = × 2.5 = 1.5 V
30 + 20
EB-KVL: 2.5 = VEB + 12 × 103IB + 1.5
2.5 V
IB = (2.5 − 1.5 − 0.7)/(12 × 103 ) = 25 µA
12k
IC = βIB = 2.5 mA 1.5 V
EC-KVL: 2.5 = VEC + 500IC 500

VEC = 2.5 − 500 × 2.5 × 10−3 = 1.25 V

Since VEC ≥ 0.7 V and IC > 0, assumption of BJT in active is justified.

Bias Summary: VEC = 1.25 V, IC = 2.5 mA, and IB = 25 µA.

Problem 4. Find the bias point (Si BJT with β = 200 and VA → ∞).
9V
Assume BJT (NPN) in active. Replace R1 /R2 voltage divider
with its Thevenin equivalent (note capacitors are open): 18k

vi
22 vo
RB = 18 k k 22 k = 9.9 k, VBB = × 9 = 4.95 V 0.47 µ F
18 + 22
IE IE 22k 1k
BE-KVL: VBB = RB IB + VBE + 103 IE IB = =
1+β 201
!
9.9 × 103
4.95 − 0.7 = IE + 103 9V
201
RB
IC
IE = 4 mA ≈ IC , IB = = 20 µA VBB
β
1k
CE-KVL: VCC = VCE + 103 IE
VCE = 9 − 103 × 4 × 10−3 = 5 V

Since VCE ≥ 0.7 V and IC > 0, assumption of BJT in active is justified.

Bias Summary: VCE = 5 V, IC = 4 mA, and IB = 20 µA.

ECE65 Lecture Notes (F. Najmabadi), Spring 2010 4-30

Problem 5. Find the bias point (Si BJT with β = 200 and VA → ∞).
15 V
Assume BJT (NPN) is in active. Replace R1 /R2 voltage divider
with its Thevenin equivalent. Since capacitors are open, the 34 k 1k

emitter resistance for bias is 270 + 240 = 510 Ω. vi

vo

4.7 µ F
5.9 270
RB = 5.9 k k 34 k = 5.0 k, VBB = 15 = 2.22 V
5.9 + 34 5.9 k

47 µ F
IE IE 240
BE-KVL: VBB = RB IB + VBE + 510IE IB = =
1+β 201
!
5.0 × 103
2.22 − 0.7 = IE + 510
201 15V

IC 1k
IE = 3 mA ≈ IC , IB = = 15 µA
β RB

CE-KVL: VCC = 1000IC + VCE + 510IE VBB

270 + 240
= 510
VCE = 15 − 1, 510 × 3 × 10−3 = 10.5 V

Since VCE ≥ 0.7 V and IC > 0, assumption of BJT in active is justified.

Bias Summary: VCE = 10.5 V, IC = 3 mA, and IB = 15 µA.

Problem 6. Find the bias point (Si BJT with β = 200 and VA → ∞).
16 V

30k 1.5k
30k 16V
vo
510nF 1.5k
vi + + RB
V CC VD0
− −
VBB
6.2k 510 6.2k
510

Assuming that the BJT is in the active state, the base voltage has to be large enough to
forward bias the BE junction and, therefore, the diode would also be forward biased. We
can find the Thevenin equivalent of the voltage divider part by noting (see circuit above:)

6.2
VBB = Voc = (VCC − VD0 ) + VD0 = 2.74 + 0.83VD0 (V)
30 + 6.2
RB = RT = 30 k k 6.2 k = 5.14 k

ECE65 Lecture Notes (F. Najmabadi), Spring 2010 4-31