Rigorous Analysis of Uniaxial Bi-Anisotropic

Dielectric Resonators by the Mode Matching Method

N. Aknin, A. El Moussaoui, M. Iben Yaich, M. Essaaidi
Electronics and Microwaves Group, Department of Physics, Faculty of Sciences,
Abdelmalek Essaadi University, P.O. Box 2121, Tetuan 93000, Morocco;
e-mail: Aknin@hotmail.com; essaaidi@hotmail.com
Recei¨ ed 16 April 1998; re¨ ised 10 December 1998

ABSTRACT: Rigorous analysis of uniaxial bi-anisotropic dielectric resonators is carried out

by the mode matching method. To validate our numerical model, results are satisfactorily
compared with the literature for a uniaxial electric anisotropic dielectric resonator (DR).
Then bi-anisotropy effects of DRs dielectric materials on their resonant frequencies are
studied in detail. 䊚 1999 John Wiley & Sons, Inc. Int J RF and Microwave CAE 9: 385᎐393, 1999.

Keywords: dielectric resonator; bi-anisotropy; mode matching

INTRODUCTION mate methods have been used to compute uniax-

Dielectric resonators ŽDRs. ease of fabrication,
small weight and size and very high Q-factors
have made them very popular devices for many
microwave and millimeter-wave applications.
Though their fabrication process is very easy, it
frequently leads to permittivities of different val-
ues along the different directions Ži.e., anisotropic
materials.. Such materials comprise mainly single
crystals, ferrites, and plasmas w1x. Recently, single
crystals DRs such as sapphire DRs, have at-
tracted much attention due to their small losses.
This property is very important for small noise
microwave oscillators w2, 3x. In order to obtain
very high Q-factors Ž) 2 ⭈ 10 6 ., these resonators
are placed between two high Tc Ž90⬚K. supercon-
ducting layers w4, 5x.
Ceramic DRs’ resonant frequencies and their
electromagnetic ŽEM. field distributions, associ-
ated with several modes, have been extensively
dealt with in the literature using different numer-
ical methods w6x. However, the anisotropic DRs
have not received the same attention as that
dedicated to the isotropic ones. Some approxi-
Correspondence to: M. Essaaidi
ial anisotropic sapphire DRs resonant frequencies
w7, 8x and their EM field distributions w9x, but they
have proved to be insufficient to allow an accu-
rate design of these devices. Thus, it is necessary
to resort to rigorous methods such as the finite
difference method w10x, the axial mode matching
method developed by Zaki and Atia w11x and
Chen and Zaki w12x and its radial version pro-
posed by Kobayashi and Tanaka w13x. This latter
method has been extended by Kobayashi to the
analysis of uniaxial anisotropic DRs w14x. To our
knowledge, it has been supposed so far that the
dielectric materials are magnetically isotropic.
However, real materials show normally certain
magnetic anisotropy that should be taken into
account in order to allow an accurate design of
these devices. Hence, in this paper we study the
effect of the dielectric materials bi-anisotropy on
the resonant frequencies of DRs TE 01 ␦ mode.
THEORY
The studied uniaxial bi-anisotropic DR is pre-
sented in Figure 1. The substrate is supposed to
be isotropic with a relative permittivity ␧ r s and a

䊚 1999 John Wiley & Sons, Inc. CCC 1096-4290r99r050385-09

385
386 Aknin et al.

Figure 1. Structure of a uniaxial bi-anisotropic dielec-

tric ring resonator placed in a cylindrical conductor
cavity.
Figure 2. Uniaxial bi-anisotropic dielectric ring res-
onator in its plating structure.
relative permeability ␮ r s s 1, while the DR is a
low-loss homogeneous uniaxial bi-anisotropic ma-
terial characterized by the following permittivity
and permeability tensors, respectively, w1x: where E and H are, respectively, the electric and
the magnetic fields. ␧ 0 and ␮ 0 are, respectively,
vacuum permittivity and permeability. Equation
␧␳ 0 0
Ž5. can be written as follows:
w ␧r x s 0 ␧␾ 0 , Ž1.
0 0 ␧z
␧ z ⭸ Ez
ⵜ ⭈ Žw ␧ r x E. s ␧␳ ⵜ ⭈ E y ␧␳ 1 y s 0.
with ␧␳ s ␧␾ , and
ž ␧␳ / ⭸z
Ž7.

␮␳ 0 0
w ␮r x s 0 ␮␾ 0 , Ž2. Hence for the TE modes Ž Ez s 0. we obtain
0 0 ␮z
␧ z ⭸ Ez
ⵜ⭈Es 1y s 0.
with ␮␳ s ␮␾ .
The DR cylindrical cavity shielding is supposed
ž ␧␳ / ⭸z
Ž8.

to be a perfect loss-less electric wall ŽPEC.. Since

regions R1 and R3 ŽFig. 2. remain identical to the In order to allow an easy resolution of this EM
one encountered in the isotropic cylindrical DR boundary problem concerning TE modes a vector
which is widely treated in the literature w15᎐18x, potential F which is consistent with eq. Ž8. can be
our interest is concentrated on the bi-anisotropic introduced. This satisfies the following equations;
region R2 ŽFig. 2..
Considering a time-harmonic factor e j ␻ t ,
Maxwell’s equations for a bi-anisotropic source- 1
Esy ⵜ = F, Ž9.
free region read: ␧0

ⵜ = H s j ␻␧ 0 w ␧ r x E, Ž3.
where
ⵜ = E s yj ␻␮ 0 w ␮ r x R, Ž4.
ⵜ ⭈ Žw ␧ R x E. s 0, Ž5. ysin Ž m ␾ .
F s ␺ hŽ ␳, z.
ⵜ ⭈ Žw ␮ r x H. s 0, Ž6. ž cos Ž m ␾ .
z.
/ Ž 10.
 Analysis of Uniaxial Bi-Anisotropic DRs 387

Substituting Ž10. in Ž9., we obtain the electric with

field components, namely:
␮␳ 1 ⭸ ⭸ ␮␳ m2
¡E s
m
␺ Ž ␳, z.
cos Ž m ␾ .
D␳ s
␮ z ␳ ⭸␳ ž / ␳
⭸␳
y
␮z ␳ 2
, Ž 17.

~
h
␳
␧0 ␳ sin Ž m ␾ .
,
ž / and
1 ⭸␺ Ž ␳ , z . ysin Ž m ␾ . Ž 11. ⭸2
E␾h s

¢E
␧0 ⭸␳ cos Ž m ␾ .
,
ž / Dz s
⭸ 2z2
q k 02 ␧␳ ␮␳ Ž 18.

h
z s 0. are differential operators acting, respectively, on
␳ and z dependent functions.
The components of H can be obtained using Ž4. An easy way to find ␺ h is to express it in
and Ž11. and are given by terms of eigenfunctions Z␳h of the differential

¡ yj ␻ ⭸ 2␺ h ysin Ž m ␾ .
operator Dz :
⬁
s
H␳h
k 02 ␮␳ ž
⭸␳ ⭸ z cos Ž m ␾ .
,
/ ␺ hŽ ␳, z. s Ý
␳s1
R hp Ž ␳ . Z ph Ž z . , Ž 19.

j ␻ m 1 ⭸␺ h cos Ž m ␾ .
H␾h s where R hp are the radial functions satisfying eq.
~ k 02 ␳ ␮␳ ⭸ z sin Ž m ␾ .
,
ž / Ž 12.
Ž13.. Since Z ph depends on the regions of the DR,
yj ␻ 1 ⭸ ⭸␺ h m2 we introduced the following notation:
H zh s
k 02 ␮ z ž ž /
␳ ⭸␳
␳
⭸␳
y
␳2
␺h
/ ¡Z p1
Ž z., z g w 0. h1 x ,
ysin Ž m ␾ . Z ph Ž z . s
1
~Z Ž z., z g w h1, h1 q h2 x ,
¢ 'C ¢Z p2
ž =cos Ž m ␾ .
.
/ p
p3
Ž z., z g w h1 q h2. h x ,
Ž 20.
Substituting eqs. Ž11. and Ž12. in Ž3. and Ž4., the
following scalar wave equation can be obtained, where C p is the normalization coefficient, and Z p i
are the eigenfunctions in the different dielectric
␮␳ 1 ⭸ ⭸␺ h
␮␳ m 2
␳ y ␺h layers, i s 1, 2, or 3, of region R2 ŽFig. 2.. ␭ p are
␮ z ␳ ⭸␳ ž / ⭸␳ ␮z ␳ 2 their corresponding eigenvalues.
We can obtain the Z p i by enforcing the bound-
⭸ 2␺ h
q q k 02 ␧␳ ␮␳ ␺ h s 0, Ž 13. ary conditions, applying the continuity of the tan-
⭸ 2z2 gential EM field components, and by solving
␮␳ 1 ⭸ ⭸␺ h m2 the following equation obtained by substituting
␳ ␺h
␮z ž ž /
␳ ⭸␳ ⭸␳
y
␳2 / eq. Ž19. into Ž13.:
d 2 Zp i
⭸ ␺ 2 h q Ž k 02 ␧ k ␮ k q ␭ p . Z p i s 0, Ž 21.
s q k 02 ␧␳ ␮␳ ␺ .
h Ž 14. dz 2
⭸ 2z2
with
The z-component of the magnetic field can be
¡␧ , z g w 0, h1 x ,
s~␧
obtained substituting eq. Ž14. in Ž12.. Hence Hzh rs

␧ k ⭈ ␮k ⭈␮ , z g w h1, h1 q h2 x , Ž 22.
is given by
¢1, ␳ ␳

z g w h1 q h2, h x .
yj ␻ 1 ⭸ 2␺ h
s q k 02 ␧␳ ␮␳ ␺
Hzh
k 02 ␮␳ ž ⭸ z2
h
/ We see from Ž11. and Ž12., that the boundary
conditions and the continuity of the tangential
ysin Ž m ␾ . EM field require that
=
ž cos Ž m ␾ .
.
/ Ž 15.
Z p1 s 0, at z s 0, Ž 23.

Equation Ž13. can also be reduced to the follow- Z p3 s 0, at z s h, Ž 24.

ing expression, 1
Z p1 s Z p2 , at z s h1, Ž 25.
D␳ ␺ q Dz ␺ s 0,
h h Ž 16. ␮␳
388 Aknin et al.

dZ p1 1 dZ p2 The TM modes, which are necessary to ade-

s , at z s h1, Ž 26.
dz ␮␳ dz quately represent the EM field in every region of
the studied DR, can be obtained in the same way
1 dZ p2 dZ p3 as for the TE modes. Hence by analogy with
s , at z s h1 q h2, Ž 27.
␮␳ dz dz Ž7. ᎐ Ž10. the following expressions are considered,

1
Z p2 s Z p3 , at z s h1 q h2. Ž 28. ␮ z ⭸ Hz
␮␳ ⵜ ⭈ Žw ␮ r x H. s ␮␳ⵜ ⭈ H y ␮␳ 1 y s 0,
ž ␮␳ / ⭸z
The eigenvalues ␭ p can be obtained from eq. Ž 32.
Ž28..
The radial functions R hp can be obtained re-
solving the following equation obtained in the thus, we obtain
same manner as Ž21.:

1 d dR hp m2 ␮z ␮ z ⭸ Hz
ⵜ⭈Hs 1y s 0,
␳ d␳ ž / ž
␳
d␳
y
␳2
q
␮␳ /
␭ hp R hp s 0. Ž 29. ž ␮␳ / ⭸z
Ž 33.

Once the radial and the axial functions are deter- 1

Hs ⵜ = A, Ž 34.
mined, it is easy to find the EM field components, ␮0
namely,

¡E Ž ␳ , ␾ , z .
h
␳
where

⬁
m cos Ž m ␾ .
s R hp Ž ␳ . Z ph Ž z .
␧0 ␳
Ý
ps1
ž sin Ž m ␾ .
,
/ A s ␺ eŽ ␳, z.
ž cos Ž m ␾ .
sin Ž m ␾ .
z,
/ Ž 35.
~E hŽ
␾ ␳, ␾, z.
⬁
1 ysin Ž m ␾ . with
s R hp Ž ␳ . Z ph Ž z .
␧0
Ý ž cos Ž m ␾ .
,
/
¢E Ž ␳ , ␾ , z . s 0,
ps1
h ⬁
z
␺ eŽ ␳, z. s Ý R ep Ž ␳ . Z pe Ž z . . Ž 36.
Ž 30. ps1

¡H ␳
hŽ
␳, ␾, z.
Hence the EM field components can be written
yj ␻ ⬁
ysin Ž m ␾ . as follows,
s ␳ . Z ph⬘ Ž
k 02 ␮␳ ps1
Ý R h⬘
p
Ž z.
ž
cos Ž m ␾ .
,
/
H␾h Ž ␳ , ␾ , z . ¡E Ž ␳ , ␾ , z .
e

~
␳
j␻ m ⬁
cos Ž m ␾ . yj ␻ ⬁
cos Ž m ␾ .
s R hp Ž ␳ . Z ph⬘ Ž z .
k 02 ␳␮␳ ps1
Ý ž sin Ž m ␾ .
,
/ s
k 02 ␧␳ ps1
Ý p ␳ Zp z
R e⬘ Ž . e⬘ Ž .
ž sin Ž m ␾ .
,
/
H zh Ž ␳, ␾, z. E␾e Ž ␳, ␾, z.
j␻ ysin Ž m ␾ . ~ yj ␻ m ⬁
ysin Ž m ␾ .
¢ s
k 02 ␮␳
Ý R hp Ž ␳ . ␭hp Z ph Ž z . ž cos Ž m ␾ .
.
/ s
k 02 ␧␳ ps1
Ý R ep Ž ␳ . Z pe⬘ Ž z .
ž cos Ž m ␾ .
,
/
Ž 31. Eze Ž ␳ , ␾ , z .
yj ␻ 1 ⬁
cos Ž m ␾ .
Regions R1 and R3 which are two-layer regions,
can be easily deduced from the above study by
¢ s
k 02 ␧ z ␮␳
Ý
ps1
R ep Ž ␳ . ␭ ep Z pe Ž z .
ž sin Ž m ␾ .
,
/
simply setting w ␮ r x s 1 and ␧ r s 1 in the air and Ž 37.
w ␧ r x s ␧ r s in the substrate.
 Analysis of Uniaxial Bi-Anisotropic DRs 389

¡H Ž ␳ , ␾ , z .
␳
e the matrix M, namely,
⬁
m ysin Ž m ␾ . det M Ž ␧␳ , ␮␳ , a, c, h, h1 , h 2 , h 3 , ␧ r s , k0 . s 0.
s R ep Ž ␳ . ␭ ep Z pe Ž z .
k 02 ␮␳ ps1
Ý ž cos Ž m ␾ ./,
Ž 48.
~H eŽ
␾ ␳, ␾, z.
y1 ⬁
cos Ž m ␾ .
s p ␳ Zp z
␮0
Ý
¢H Ž ␳ , ␾ , z . s 0.
e
ps1
R e⬘ Ž . eŽ .
ž sin Ž m ␾ .
,
/ VALIDATION AND
NUMERICAL RESULTS
z

Ž 38. Since there are no numerical or experimental

The primes on the Bessel functions refer to dif-
ferentiation with respect to their argument.
The following step in the formulation process
is the application of the continuity condition of
the tangential components of the EM field on the
cylindrical boundaries between regions R1 and
R2 Ž ␳ s b . and between regions R2 and R3
Ž ␳ s a. ŽFig. 2.. We distinguish the fields of the
three partial regions by superscripts 1, 2, and 3.
We can formulate the continuity conditions as
follows,
H␾h1 y H␾h2 q H␾e1 y H␾e2 s 0,
H␾h2 y H␾h3 q H␾e2 y H␾e3 s 0,
results in the literature for bi-anisotropic DRs, we
validate our numerical model considering the uni-
axial anisotropic DRs which have been already
dealt with in the literature ŽTable I.. An excellent
agreement can be seen between our results and
those of references w10, 14x.
Figure 3 shows that the TE 01 ␦ resonant fre-
quency remains constant for values of ␮␳ com-
prised between 0.3 and 1.2, and experiences a
slight variation for other values. However, this
resonant frequency decreases with increasing ␮ z .
To illustrate in a more significant way the
effects of bi-anisotropy on the performances of
DRs, the resonant frequency is presented vs. an
anisotropy factor, we define as follows:
␳ s b, Ž 39.
< ␮␳ y ␮ z <
Af s .
␳ s a, Ž 40. ␮␳ q ␮ z

E␾h1 y E␾h2 q E␾e1 y E␾e2 s 0, ␳ s b, Ž 41. Figure 4 shows the behavior of f 0 with respect to
A f for two different values of ␧␳ . It can be seen
E␾h2 y E␾h3 q E␾e2 y E␾e3 s 0, ␳ s a, Ž 42. that f 0 increases for increasing values of A f and
for decreasing values of ␧␳ .
H zh1 y H zh2 s 0, ␳ s b, Ž 43. The effect of the cavity dimensions on the
TE 01 ␦ resonant frequency are studied in Figure 5.
H zh2 y Hzh3 s 0, ␳ s a, Ž 44. Hence, for values of cra ranging from 1 to 5, f 0
decreases considerably, while this decrease is
Eze1 y Eze2 s 0, ␳ s b, Ž 45. smaller for greater values of cra. Figure 6 shows
the dependence of f 0 on the ratio of the DR rod
Eze2 y Eze3 s 0, ␳ s a. Ž 46. dimensions hr2 a. Values of this ratio less than
0.6 can affect considerably f 0 while greater values
These boundary conditions can be written in the have little effect.
form of a homogeneous linear set of equations:

MX s 0,
where M is a square 2 N = 2 N matrix, N is the
number of terms in the different summations, and
X is a one column vector containing the unknown
EM field amplitudes.
The resonant frequencies of the different DR
modes can be obtained resolving a nonlinear
equation giving the roots of the determinant of
CONCLUSION
Ž 47.
The detailed study of uniaxial bi-anisotropy effect
on the resonant frequency of DRs, carried out in
this paper, has shown that they can have an
important impact upon their performances Že.g.,
resonant frequencies .. Hence, in order to allow
an accurate design of these devices, bi-anisotropy
effects are to be accounted for in the formulation
of the relevant EM boundary problem.
390 Aknin et al.

TABLE I. Comparison of the Resonant Frequencies (GHz) for the Sapphire DR Cavity a
f0 f 0 w14x Error
␧␳ ␧z a h1 s h 3 h2 Calculated Measured f 0 w10x %
Case a 9.389 11.478 4.9925 1.501 9.998 9.72 9.714 9.706 0.06
Case b 9.399 11.553 5.001 3.999 5.002 10.704 10.706 10.696 0.02
a
c s 7.775 mm, h s 13 mm, b s 0, ␧ r s s 1.031, ␮␳ s ␮ z s 1. a, h1, h3, and h2 are in mm.

Figure 3. TE 01 ␦ resonant frequency variation for Case b in Table I as a function of ␮␳ .

Figure 4. Anisotropic factor dependence of f 0 for bi-anisotropic DR ŽCase b in Table I

with two different ␧␳ ..
 Analysis of Uniaxial Bi-Anisotropic DRs 391

Figure 5. TE 01 ␦ resonant frequency vs. cra with 2 arh2 s 2, ␧␳ s 9.399, and ␧ z s 11.553.
Case 1: ␮␳ s ␮ z , Case 2: ␮␳ s 0.9, ␮ z s 0.95, Case 3: ␮␳ s 0.95, ␮ z s 0.9.

Figure 6. TE 01 ␦ resonant frequency vs. h 2r2 a for Case b in Table I with different values
of ␮␳ and ␮ z . Case 1: ␮␳ s ␮ z , Case 2: ␮␳ s 0.9, ␮ z s 0.95, Case 3: ␮␳ s 0.95, ␮ z s 0.9.

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BIOGRAPHIES
N. Aknin was born in El Hoceima in
1965. She received the ‘‘Licence de
physique’’ degree, from Abdelmalek Es-
saadi University in Tetouan in 1988 and
ˆ
the ‘‘Diplome d’Etudes Approfondies’’
from Hassan II University in Casablanca,
Morocco, both in electrical engineering.
She recently obtained her Ph.D. degree
with honors in electrical engineering from
Abdelmalek Essaadi University. She is the author and co-
author of several publications in national and international
journals. Her main field of interest is computer aided design
of dielectric resonators with different dielectric materials
properties such as anisotropy, bi-anisotropy, chirality, and high
temperature superconductors.
A. El Moussaoui was born in Al Ho-
ceima, Morocco in 1953. He received an
engineering degree in electronics and
mechanics from ‘‘Ecole Central des Arts
et Metiers’’ ŽECM. in Brussels, Belgium
ˆ
in 1977, a ‘‘Diplome de Docteur Inge-
nieur’’ degree in electronics and mea-
surements in 1982 from Orsay University
Paris, France and a Ph.D. degree in elec-
trical engineering ŽMicrowave. in 1990 from Bradford Univer-
sity, U.K. He is currently exercising in the Faculty of Sciences
as a Professor in electronics and microwave frequencies and
directs research in numerical modeling of high frequencies
12. C. Chen and K.A. Zaki, Resonant frequencies of
dielectric resonators containing guided complex
modes, IEEE Trans. Microwave Theory Tech
MTT-36 Ž1988., 1455᎐1457.
13. Y. Kobayashi and S. Tanaka, Resonant modes of a
dielectric rod resonator short-circuited at both ends
by parallel conducting plates. IEEE Trans Mi-
crowave Theory Tech MTT-28 Ž1980., 1077᎐1085.
14. Y. Kobayashi and T. Senju, Resonant frequencies
in shielded uniaxial-anisotropic dielectric rod res-
onators, IEEE Trans Microwave Theory Tech 41
Ž1993., 2198᎐2205.
15. J. Krupka, Properties of shielded cylindrical quasi-
TE 0mn-mode dielectric resonators, IEEE Trans Mi-
crowave Theory Tech 36Ž4. Ž1988., 774᎐779.
16. S. Vigneron and P. Guillon, Mode matching method
for determination of the resonant frequency of a
dielectric resonator placed in metallic box, IEE
Proc 134 Ž1987., 151᎐155.
17. Y. Kobayashi et al., Frequency and low-tempera-
ture characteristics of high-Q dielectric resonators,
IEEE MTT-S Digest, 1989, pp. 1239᎐1242.
18. H.C. Chang et al., Unloaded Q’s of axially asym-
metric modes of dielectric resonators, IEEE MTT-S
Digest 1989, pp. 1231᎐1234.
structures Ždielectric resonator, microstrip . . . .. He is responsi-
ble of the formation and research unit for high degree prepa-
ration. He is also in charge of the cooperation in the Univer-
sity Abdelmalek Essaadi.ˆ He is the author and co-author of
several publications in national and international journals. His
interest is now focused mainly on the modeling and
computer-aided design of dielectric resonators, millimeter-
wasve and microwave monolithic circuits, and the analysis of
special materials properties, such as dielectric substrates
anisotropy or bi-anisotropy and high temperature supercon-
ductors.
M. Iben Yaich was born in Targuist, in
1955, Morocco. He received the ‘‘Licence
en physique’’ degree from Mohamed V
University in Rabat. He obtained the
` cycle’’ in electrical
‘‘doctorat de troisieme
engineering with honors from Abdel-
malek Essaadi University in Tetouan in
1998. Currently, he works in the E.N.S.
ŽEcole Normale Superieure.. Martil Mo-
rocco. His main fields of interest concern mainly the modeling
and computer-aided design of stepped impedance resonators
and simulation of electromagnetic fields radiation and scatter-
ing by the TLM method. He is a member of the Electronics
and Microwaves Group of the faculty of sciences of Abdel-
malek Essaadi University Tetouan.

M. Essaaidi was born in Tetuan, Mo-
rocco in 1965. He received the ‘‘Licence
de Physique’’ degree, the ‘‘Doctorat de
`
Troisieme Cycle’’ degree and the
‘‘Doctorat d’Etat’’ degree, all in electrical
engineering and with honors, from Ab-
delmalek Essaadi University in Tetuan,
Morocco, in 1988, 1992, and 1997, respec-
tively. In September 1993, he joined the
Electronics & Microwaves Group of the Faculty of Sciences of
Abdelmalek Essaadi University as an assistant professor and
Analysis of Uniaxial Bi-Anisotropic DRs 393
was promoted to the rank of associate professor in 1997. His
main fields of interest concern mainly the modeling and
computer-aided design of millimeter-wave and microwave
monolithic circuits, and the analysis of special materials prop-
erties, such as dielectric substrates anisotropy or bi-anisotropy
and high temperature superconductors, effects on their per-
formances. Dr. M. Essaaidi has authored and co-authored
several articles and communications that have appeared in
specialized publications and symposia. He is an IEEE member
and his biography is published in the 1999 edition of Marquis
Who’s Who.