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FI 3221 ELECTROMAGNETIC
INTERACTIONS IN MATTER
Alexander A . Iskandar
Physics of Magnetism and Photonics
• Sur face
Plasmon
• Propagation
of Sur face
SURFACE PLASMON Plasmon
• Localized
Plasmon
• SPR
Spectroscopy
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REFERENCES
Main
▪ S.A. Maier : Section 2.1 – 2.3, 5.1
Supplementary
▪ J. A. Dionne et.al., Phys. Rev. B72, 075405 (2005)
Consider the x z y
direction as the dielectric
effective propagation
direction and by x
metal
symmetry, there is
no y-dependence.
E( x, y, z , t ) E( z )ei ( x t )
Substituting to the Maxwell’s eq.s, we obtain
2 E( z )
k02 2 E 0
z 2
And similar equation for the H-field.
Alexander A. Iskandar Electromagnetic Interactions in Matter 4
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TE SURFACE-WAVE SOLUTION
0 0
And for region z < 0, we obtain
E y ( z ) A1ei ( x km z ) , Re[k m ] 0
km i ( x k
H x ( z ) A1 e i ( x k m z ) , H z ( z ) A1 e mz)
0 0
TE SURFACE-WAVE SOLUTION
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TM SURFACE-WAVE SOLUTION
d 0 d 0
And for region z < 0, we obtain
H y ( z ) A1ei ( x km z ) , Re[k m ] 0
km
E x ( z ) A1 e i ( x k m z ) , E z ( z ) A1 e i ( x k mz)
m 0 m 0
TM SURFACE-WAVE SOLUTION
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Plasmons:
▪ collective oscillations of the “free electron gas” density, often at
optical frequencies.
Surface Plasmons:
▪ plasmons confined to surface (interface) and interact with light
resulting in polaritons.
▪ propagating electron density waves occurring at the
interface between metal and dielectric.
Surface Plasmon Resonance:
▪ light () in resonance with surface plasmon oscillation
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km2 k02 m 2
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Kurva Dispersi - Model Gas Elektron Bebas Kurva Dispersi - Komponen Re[kx] dengan Data Empiris
6 5.82 eV 6
kx'
/ 213 nm
5.5 P 8.85 1015 s 1 5.5 light line
5 5
Energi (eV)
3.5
SP P 1 2 3.5 Modus Quasi-bound (QB)
3.28 eV /
378 nm
3 3
Modus Terikat 3.44 eV /
2.5 2.5 (SPP) 360 nm
2 2
0 0.05 0.1 0.15 0.2 0.25 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07
kx (1/nm) kx' (1/nm)
-3
attenuated. Define 10
-5
propagation length L as 10
-6
RPP
2 Im[ ]
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Confinement of the
surface plasmon
2000
SiO2
wave near the 1500
Skin Depth
interface can be
(nm)
1000
360 nm (3.44 eV)
characterize by its 500
as the length d
Panjang Gelombang Vakum (nm)
Skin Depth Ag
1
(nm)
d
-150
Imki -200 Ag
Alexander A. Iskandar Electromagnetic
-250 Interactions in Matter 18
200 400 600 800 1000 1200 1400 1600 1800 2000
Panjang Gelombang Vakum (nm)
0.5
-0.5
Ag
– SPP mode
-1 SiO2
200
100 200
0 150
100
-100 50
z(nm) -200 0
x(nm)
Distribusi Medan Ex, untuk Lambda = 476 nm Distribusi Rapat Energi pada x = 0
200 5
Ag SiO2 Ag
150 4.5
4
100
3.5
50
3
z(nm)
0 2.5
U
-50 2
1.5
-100
1
-150
SiO2 0.5
-200 0
0 20 40 60 80 100 120 140 160 180 200 -200 -150 -100 -50 0 50 100 150 200
x(nm) z(nm)
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0.5
100 200
0 150
100
-100 50
z(nm) -200 0
x(nm)
Distribusi Medan Ex, untuk Lambda = 370 nm Distribusi Rapat Energi pada x = 0
200 5
Ag SiO2 Ag
150
4.5
4
100
3.5
50
3
z(nm)
0 U 2.5
-50 2
1.5
-100
1
-150
SiO2 0.5
-200
0 20 40 60 80 100 120 140 160 180 200 0
x(nm)
-200 -150 -100 -50 0 50 100 150 200
Alexander A. Iskandar Electromagnetic Interactions in Matter z(nm)
20
0.5
Distribusi Medan Ex, untuk Lambda = 315 nm Distribusi Rapat Energi pada x = 0
200 5
SiO2 Ag
Ag
4.5
150
4
100
3.5
50
3
z(nm)
0 2.5
U
2
-50
1.5
-100
1
-150
0.5
SiO2
-200 0
0 20 40 60 80 100 120 140 160 180 200 -200 -150 -100 -50 0 50 100 150 200
x(nm) z(nm)
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MULTILAYER SYSTEM
MULTILAYER SYSTEM
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Profil Medan Listrik Tangensial Untuk Tebal Film = 50 nm, Lambda = 400 nm
1 Ag
-0.5
SiO2
Ag film thickness 50 nm
-1
400
Propagation length L = 1388.31 nm
200 1500
SiO2
0 1000
-200 500
z(nm) -400 0
x(nm)
Profil Medan Listrik Tangensial Untuk Tebal Film = 50 nm, Lambda = 400 nm Cross-Section Profil Medan E pada x=0, Tebal Film = 50, Lambda = 400 nm
400 1
0 Ex(z)
0
-100 -0.2
-0.4
-200
-0.6
-300
SiO2 -0.8
-400 -1
0 500 1000 1500 -400 -300 -200 -100 0 100 200 300 400
x(nm) z (nm)
Alexander A. Iskandar Electromagnetic Interactions in Matter 24
Profil Medan Listrik Tangensial Untuk Tebal Film = 50 nm, Lambda = 400 nm
1 Ag
-0.5
SiO2
Ag film thickness 50 nm
-1
400
Propagation length L = 434.81 nm
200 SiO2 1500
0 1000
-200 500
z(nm) -400 0
x(nm)
Profil Medan Listrik Tangensial Untuk Tebal Film = 50 nm, Lambda = 400 nm Cross-Section Profil Medan E pada x=0, Tebal Film = 50, Lambda = 400 nm
400 1
Ag 0.8
200
0.7
100
0.6
z(nm)
Ex(z)
0 0.5
-100 0.4
0.3
-200
0.2
-300
SiO2 0.1
-400 0
0 500 1000 1500 -400 -300 -200 -100 0 100 200 300 400
x(nm) z (nm)
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m()
d
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reflectance
prism
0
c angle
prism
1
reflectance
prism
0
c angle
evanescent field
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detector
1
reflectance
Au 0
50 nm c o angle
(Kretschmann configuration)
detector
1
reflectance
Au 0
c o 1
angle
analyte
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HOMEWORK
HOMEWORK
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