Design Of All Optical Logical OR Gate Based On 2-D
Photonic Crystal
Sagarika Dey Anil Kumar Shukla
AITEM AITEM
Amity University,Uttar Pradesh Amity University, Uttar Pradesh
d.sagarik@gmail.com akshukla2@amity.edu
Abstract— The paper presents the design of all-optical OR gate
based on the 2-D photonic crystal. The proposed structure consists
of Si rod placed in the air of having the size 15μm ×18μm with
point and line defects. The Finite difference time domain (FDTD)
and plane wave expansion (PWE) methods are used for simulating
the structure at 1550 nm wavelength. The forbidden gap of 0.0425
in the range of 0.316417 ” (1/Ȝ) ” 0.358938 has been obtained for
Transverse Magnetic (TM) mode. The obtained contrast ratio is
10dB for this design which makes it advantageous as a basic
component for the design of high-speed optical communication
devices.
Keywords—Photonic Crystal, OR gate, FDTD, Opti-FDTD
I. INTRODUCTION
Photonic crystals are made of dielectrics (periodic or metallo-
dielectrics) or even sometimes made of semiconductors.
Photonic crystals have periodically regulated dielectric
constants which go high and low. Photonic crystals are placed
on the dielectric crystal lattice. The light waves travel inside
the photonic crystal due to which reflection and refraction
occur resulting in interference. The interference is the reason
why frequencies close to the periodicity of the dielectric
cannot propagate through the photonic crystals. This
frequency is also known as the photonic band gap (PBG). The
PBG is responsible for the routing of the optical wave and
flow of the light. The photonic crystals may be fabricated
according to the PBG. The photonic crystal may be altered by
doping, where a dielectric rod if inserted or removed from
certain regions [1-4].
In the recent years, researchers are attracted towards the
design of all-optical logical gates based on two dimensional
photonic crystals due to the requirement of high-speed
switching operation. Logic gates based on photonic crystals
have several advantages such as compact space, low power
requirement, quick response times and faster recovery rates in
comparison to conventional electronic logic gates[5-12].
In this paper design of all-optical logical OR gate is proposed
based on two-dimensional photonic crystals. The paper is
arranged as in following: Section II presents the proposed
design of logical OR gate. Section III elaborates the simulated
Ved Prakash Dubey
Department of ECE
GEHU, Deharadun, India
dubeyved07@gmail.com
results and discussion and finally, section IV concludes the
paper.
II. PROPOSED STRUCTURE
The proposed structure of all optical OR gate is shown in the
Fig. 1. Τhe wafer size used is 20μm x 20μm. Since an OR gate
has minimum two inputs, two linear waveguides were used
with a central cavity. The structure is designed using two-
dimensional 15μm×18μm arrays of cylindrical rods of 0.2a,
where ‘a’ represents the lattice constant. The lattice constant is
the distance between two dielectric rods and was kept at 1μm.
Two waveguides were made by removing dielectric rods. The
central cavity was made at the intersection points of the two-
quasi waveguides. Line defect in the structure has been
achieved by removing the dielectric rods which may be treated
as equivalent to the linear waveguide. Point defect has been
obtained by increasing the size of the rod or removing the rod.
Four elliptical rods of dimension 0.2μmx0.5μm were also
used. A central defect of the 0.7μm radius was also used. Fig.
2 represents the three-dimensional view of the proposed
structure.
To obtain the functionality of logical OR gate, point defect
optimization of a rod has been done in the structure. Logic 0 is
defined by low power level and Logic 0 is defined by high
power level for simulating the structure. It has been assumed
that if obtained power at the output port is 50% below than
applied at input port it is considered as Logic. If the obtained
power at the output port is 50% above than applied at input
port the same is considered as logic 1.
C
A
B
Fig 1: Proposed structure of Logical OR gate
 The shaded blue region indicates the forbidden band gap. The
bandgap ranges from 0.316417 ” (1/Ȝ) ” 0.358938 having a
bandgap width of 0.0425.

Fig 4: Simulation Result of proposed OR gate for the inputs A=0 and B=0

Fig. 4 shows the simulated optical field pattern of the

proposed OR gate for the input combination A=0 and B=0 i.e.
FIG 2: 3-D view of proposed structure of Logical OR gate when both inputs are low. The obtained output power is
0.054703 W/m which is 50% lower than the applied power at
Table 1: parameters of the proposed structure of OR gate: the input port and may be treated as logic 0. Fig. 5 shows the
simulated optical field pattern of the proposed OR gate for the
Parameters Material/value input combination A=1 and B=1 i.e. when both inputs are
Dielectric Rods Silicon high. The obtained output power is 0.547027 W/m which is
50% above than the applied power at the input port and may
Wafer Size 20μmx20μm be treated as logic 1. Table 2 summarizes the output power
Size of crystal lattice 15x18 levels obtained for different input combinations.
Contrast ratio (CR) which is defined as the ratio of the signal
Refractive index of the rods 3.4 power level for Logic 1 with the signal power level for logic 0
Radius of Rods 0.2μm and represents the quality of design. The contrast ratio
obtained for the proposed structure is 10dB.
Lattice constant 1μm

III. RESULTS AND DISCUSSION

The proposed structure is simulated using finite difference
time domain(FDTD) method by applying the different
combination of inputs with TM mode polarization[10-11]. Fig.
3 shows the band diagram of the proposed structure of OR
gate.

FIG 5: Simulation Result of proposed OR gate for the inputs A=1 and B=1

Fig. 3: Band diagram of the proposed structure of OR gate

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We would like to thank Ms. Bani Gandhi, Ph. D. Scholar Theory, 1st ed.; In Tech publisher, Italy, 2012.
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“Enhanced of Photonic Bandgaps in One-Dimensional Plasma Photonic
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