Power IGBT

Insulated Gate Bipolar Transistor

 Evocation

Comparison of Power BJT and MOSFET

 Switching Frequency

 Conduction Loss

 Unipolar and Bipolar device

 Temperature

 secondary breakdown
Evocation
 Introduction
 IGBT is a combination of BJT and MOSFET.

 It is a voltage controlled device and requires only a

small input current.

 IGBT has high input impedance like a MOSFET and a

low on state power loss as in a BJT.

 IGBT is free from secondary breakdown.

 It is widely used in medium power applications.

Constructional Features of a Power IGBT
IGBT Symbol
Characteristics for IGBT
Switching characteristics of a IGBT
 Ratings of Power IGBT

 Voltage rating-1200V

 Current rating-400 A

 Switching Frequency upto10 kHz

 Turn on time-<1µs

 Turn off time-2 µs

 Applications
 Medium Power applications

 UPS systems

 Inverters

 Power supplies for solenoids, relays and contactors.

 Switched mode Power supplies

 AC and DC motor drives

 Summary
 Construction
 Operation : VI and switching characteristics
 MOSFET – High switching frequency
 IGBT – Medium switching frequency
 Applications : High switching frequency,
Inverters, UPS, Converters, Chopper