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Vanadium Oxide Nanorods
Vanadium Oxide Nanorods
Vanadium oxide is one of the most versatile oxides capable of Vanadium oxide (VOx ) nano and microsized rods were grown
existing in various forms such as V2 O5 , VO2 , V3 O5 , V3 O7 , V2 O3 , using pulsed laser deposition technique with V2 O5 as the target.
VO, V5 O9 to name a few. Most of these compounds, belong to the An n-type Si (100) was used as the substrate. A frequency tripled
Magneli phase which has a generic formula V2 O3 + (n − 2)VO2 = pulsed Nd:YAG laser (wavelength 355 nm, pulse width of ∼19 ns
Vn O2n−1 , which are structurally related. Among these, the most and repetition rate of 10 Hz) with a fluence of 1.5 J/cm2 was
well studied are V2 O3 and VO2 because of their sharp metal to used for ablation. The substrate temperature was maintained at
insulator transition [1,2]. These materials are found to have many 635 °C. The target–substrate distance was fixed at 4 cm. The oxygen
uses especially as thermochromic coatings, electromechanical pressure (O2pp ) was varied from 0.1 mbar to 0.5 mbar during
devices, catalysts etc. [3–5]. In view of the importance of vanadium deposition. Oxygen pressures below 0.1 mbar were seen to result
in smooth films and above 0.5 mbar in morphologies similar to
oxides in different technological applications, the fabrication of
that of 0.5 mbar sample. The time of deposition was 20 min, which
this material in nanostructured form is a particularly attractive
yielded an approximate thickness of 2000 Å. Phase analysis was
goal. Nanostructures of vanadium oxides have been grown using
done using X-ray diffraction (PANalytical, Philips). HRSEM was
various techniques such as sol–gel route [6,7], hydrothermal
used for finding out the surface morphology (FEI, Philips). Room
route [8,9], atmospheric pressure chemical vapor deposition with
temperature Raman spectra (Lab Ram Jobin Vyon) was measured
VOCl3 [10], gas phase synthesis [11] etc. In this paper, we have
using a He–Ne laser in the range of 100 to 1000 cm−1 . Magnetic
grown micro and nanoneedles of vanadium oxide (VOx ) using studies were done using a VSM in Physical Property Measurement
pulsed laser deposition (PLD) technique. Though PLD has been System (Quantum Design, USA) in field cooled mode in an applied
widely used for growing nanostructures of other materials such as field of 1000 Oe while magnetic hysteresis was measured from −7
ZnO [12], it has not been used much in these vanadium systems. To to 7 T on the 0.5 mbar oxygen pressure grown sample. A home-
our knowledge, this is the first report on growth of vanadium oxide made resistivity setup was used to measure resistivity from 400 to
based nanorods using PLD and also without using any catalysts or 77 K in the linear four probe configuration on the 0.5 mbar oxygen
further heat treatment. pressure grown sample.
Fig. 2. HRSEM pictures of the rods grown at (a) 0.1 mbar (b) 0.2 mbar (c) 0.3 mbar (d) 0.4 mbar (e) 0.500 mbar and of droplets (f) in 0.2 mbar. Inset in (f) shows the magnified
picture of the droplets.
N. Rama, M.S. Ramachandra Rao / Solid State Communications 150 (2010) 1041–1044 1043
a c
Fig. 3. Room temperature Raman spectra of the rods. Fig. 4. (a) Temperature variation of electrical resistivity. (b) Temperature variation
of magnetization in field cooled mode of 1000 Oe. (c) Magnetic hysteresis from
−7 kOe to +7 kOe at 6 K.
interwoven mesh similar to that for the 0.5 mbar sample. This
tunability of the size of the vanadium oxide rods with oxygen
to a rutile tetragonal structure. The transition occurs because of
pressure and also their multivalent nature will help in its various
the displacement of V atoms perpendicular to the C axis [21].
applications where specific dimensions of the rods are required
This structural transition is disrupted due to the presence of other
and in electrochemical applications, catalysis etc.
phases like V3 O7 . A similar behavior was reported by Okimura et al.
Raman spectra of our VOx nanorods synthesized by PLD are
in VO2 thin films [22]. This is also corroborated from our Raman
shown in Fig. 3. The nanorods show characteristic peaks of
data where modes corresponding to a disordered V–O–V network
vibrations corresponding to both VO2 phase and V3 O7 phase or in
are seen.
general the VOx phase. Since the relative concentrations of VO2
Magnetization and magnetic hysteresis of the sample deposited
and V3 O7 are different in each case because of different oxygen
at 0.5 mbar is shown in Fig. 4(b) and (c). V3 O7 is paramagnetic and
pressure during growth, the peak intensities are different. It is seen
semiconducting down to 5 K [23] while VO2 is paramagnetic above
that in the range of 100 to 1000 cm−1 , the dominant peaks are 340 K and diamagnetic below [24,25]. It is seen from Fig. 4 that
at 146, 225, 256, 695 and 944 cm−1 while the peaks at 305, 437, the 0.5 mbar sample shows a paramagnetic behavior up to 5 K. For
622, 823 and 992 cm−1 are somewhat less intense. The mode at the other samples the signals were very weak and therefore noisy.
992 cm−1 corresponds to the terminal oxygen (V = O) stretching The hump like behavior around 350 K and 50 K could be due to
mode which results from an unshared oxygen [17] while the mode the presence of other vanadium oxide phases like V4 O7 and V7 O13
at 944 cm−1 corresponds to V4+ –O [18]. The mode at 695 cm−1 is which have Neel temperature around that region [26]. Magnetic
assigned to the double coordinated oxygen (V2 –O) stretching mode hysteresis at 6 K shows that the magnetic moment does not even
which results from corner shared oxygen’s in common to two saturate at 7 T showing that it is a robust paramagnet.
pyramids [19]. The peaks at 256, 437 and 823 cm−1 corresponds to In conclusion we have grown micro and nanosized VOx rods
the Bg modes of VO2 [20] or could be due to the bending vibration using pulsed laser deposition method under different oxygen
modes of the V3 –O, V2 –O and V = O bonds in a disordered V–O–V partial pressures. Raman spectra shows all modes which corre-
framework. The modes at 225, 305 and 622 cm−1 corresponds to spond to VOx groups. Electrical resistivity measurement shows
the Ag modes of VO2 [20]. The lower frequency Raman peak at that the samples are highly resistive. Magnetic measurements on
146 cm−1 is assigned to the stretching mode of (V2 O2 )n which the 0.5 mbar grown show that they are in a robust paramagnetic
correspond to the chain translation [19]. The fact that all the state down to 5 K.
observed peaks could be identified implies that the samples do
not contain any other contamination and are only because of VOX Acknowledgements
phase.
Electrical resistivity of the 0.5 mbar oxygen partial pressure NR would like to thank the Department of Science and
deposited sample was measured from 400 to 80 K and is shown Technology (DST), SERC, New Delhi for the award of a project under
in Fig. 4(a). It was seen that sample was highly resistive and shows the Scheme for Young Scientists (SR/FTP/PS-16/2006). MSR would
a semiconducting behavior through out the measured temperature like to thank the Department of Science and Technology for the
range. Similar behavior was observed in other samples also, project ‘‘Establishment of Nano Functional Materials Technology
with the samples being too resistive to measure. The high Center’’ at IIT-Madras.
resistance value could be due to the fact that these rods are
not interconnected (as seen from Fig. 2) with each other and so References
inter rod scattering is expected to be high. Since the sizes of the [1] N.F. Mott, Metal-Insulator Transitions, Taylor & Francis, London, 1990.
rods are much smaller than this sample in other cases, the inter [2] M. Imada, A. Fujimori, Y. Tokura, Rev. Modern Phys. 70 (1998) 1039.
rod scattering is expected to be higher resulting in such large [3] P. Jin, G. Xu, M. Tazawa, K. Yoshimura, Appl. Phys. A 47 (2003) 455;
G.C. Granqvist, Sol. Energy Mater. Sol. Cells 91 (2007) 1529.
resistances. However it is interesting to note that it does not show [4] L.Q. Mai, W. Chen, Q. Xu, J.X. Zheng, M.Z. Ke, Mater. Rev. 16 (2002) 39.
TMI corresponding to VO2 (TMI = 340 K) even though VO2 phase is [5] N. Magg, J.B. Giorgi, M.M. Frank, B. Immaraporn, T. Schroeder, M. Baumer,
present albeit in small proportion compared to V3 O7 . This can be H.J. Freund, J. Am. Chem. Soc. 126 (2004) 3616.
[6] Sudip Mukherjee, Arun Kumar Pal, J. Phys.: Condens. Matter 20 (2008) 255202.
explained as follows: The TMI in VO2 is thought to occur because [7] G.T. Chandrappa, N. Steunou, S. Cassaignon, C. Bauvais, P.K. Biswas, J. Livage,
of a first order structural transition from a monoclinic structure Sol-Gel Sci. Technol. 26 (2003) 593.
1044 N. Rama, M.S. Ramachandra Rao / Solid State Communications 150 (2010) 1041–1044
[8] F. Sediri, N. Gharbi, Mater. Lett. (2008), doi:10.1016/j.matlet.2008.08.022. [17] J.H. Clark, The Chemistry of Titanium and Vanadium, Elsevier Press, New York,
[9] Beibei Li, Xiaomin Ni, Fu Zhou, Jing Cheng, Huagui Zheng, Mingrong Ji, Solid 1968.
State Sci. B 8 (2006) 1168. [18] Se-Hee Lee, Hyeonsik M. Cheong, Maeng Je Seong, Ping Liu, C. Edwin Tracy,
[10] U. Qureshi, T.D. Manning, I.P. Parkin, J. Mater. Chem. 14 (2004) 1190. Angelo Mascarenhas, J. Roland Pitts, Satyen K. Deb, Solid State Ionics 165
[11] O.P. Vinogradova, A.I. Sidorov, V.A. Klimov, E.B. Shadrin, A.V. Nashcheki, (2003) 111.
S.D. Khanin, V.Yu. Lyubimov, Phys. Solid State 50 (2008) 1227. [19] C. Juloen, G.A. Nazri, O. Bergstrom, Phys. Stat. Solidi B 201 (1997) 319.
[12] D. Valerini, A.P. Caricato, M. Lomascolo, F. Romano, A. Taurino, T. Tunno, [20] P. Schilbe, D. Maurer, Mater. Sci. Eng. A 370 (2004) 449.
M. Martino, Appl. Phys. A 93 (2008) 729. [21] A. Zylbersztjen, N.F. Mott, Phys. Rev. B 11 (1975) 4383.
[13] P. Barboux, N. Baffier, R. Morineau, J. Livage, Solid State Protonic Conductors [22] Kunio Okimura, Naotaka Kubo, Thin Solid Films 515 (2007) 4992.
III, Odense University Press, Paris, 1985, p. 173. [23] Michel Bayard, Jean-Claude Grenier, Michel Pouchard, Paul Hagenmuller,
[14] J. Livage, Mater. Res. Soc. Symp. Proc. 32 (1984) 125. Mater. Res. Bull. 9 (1974) I137.
[15] Guicun Li, Kun Chao, Hongrui Peng, Kezheng Chen, Zhikun Zhang, Inorg. Chem. [24] M. Abbate, Braz. J. Phys. 24 (1994) 785.
46 (2007) 5787. [25] H. Abe, M. Terauchi, M. Tanaka, S. Shin, Y. Ueda, Jpn. J. Appl. Phys. 36 (1997)
[16] R.Q. Guo, J. Nishimura, M. Matsumoto, D. Nakamura, T. Okada, Appl. Phys. A 93 165.
(2008) 843. [26] A.C. Gossard, J.P. Remeika, T.M. Rice, H. Yasuoka, Phys. Rev. B 9 (1974) 1230.