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RLS4148 / RLS4150 / RLS4448

Diodes

Switching diode
RLS4148 / RLS4150 / RLS4448
∗This product is available only outside of Japan.

!Applications !External dimensions (Units : mm)


High-speed switching

CATHODE BAND

0.4 0.4
!Features
1) Small surface mounting type. (LLDS)

φ1.4±0.1
2) High speed.
+0.2

3) For surface mounting.


3.4 −0.1
φ1.5Max.

4) High reliability.

ROHM : LLDS
EIAJ : −
!Construction
JEDEC : LL-34
Silicon epitaxial planar

!Absolute maximum ratings (Ta = 25°C)


IFSM Tstg
Type VRM VR IFM IO IF 1µs P Tj Topr
(V) (V) (mA) (mA) (mA) (A) (mW) (°C) (°C) (°C)

RLS4148 100 75 450 150 200 2 500 200 −65~+200 −65~+200


RLS4150 50 50 600 200 250 4 500 200 −65~+200 −65~+200
RLS4448 100 75 450 150 200 2 500 200 −65~+200 −65~+200

!Electrical characteristics (Ta = 25°C)


VF (V) BV (V)Min. IR (µA)Max. Cr (pF) trr (ns)
VR=6V
Type @ @ @ @ @ @ @ @ @25°C @150°C VR=0 IF=10mA
1mA 5mA 10mA 50mA 100mA 200mA 5µA 100µA VR (V) VR (V) f=1MHz RL=100Ω
0.025 20
RLS4148 75 100 50.0 20 4 4
1.0 5.0 75
0.54 0.66 0.76 0.82 0.87
RLS4150 − 50 0.1 50 100.0 50 2.5 4
0.62 0.74 0.86 0.92 1.0
0.62 0.025 20
RLS4448 − 100 50.0 20 4 4
0.72 1.0 5.0 75
The upper figure is the minimum VF and the lower figure is the maximum VF value.
RLS4148 / RLS4150 / RLS4448
Diodes

!Electrical characteristic curves (Ta = 25°C)


100 3.0

CAPACITANCE BETWEEN TERMINALS : CT (pF)


50 f=1MHz
100°C
3 000 2.5
FORWARD CURRENT : IF (mA)

REVERSE CURRENT : IR (nA)


20 1 000
70°C
2.0
10
300
5
50°C 1.5
100
2
30 1.0
Ta=25°C
5°C

°C
°C

1
Ta=25°C
Ta=−25
Ta=75
Ta=12

10 0.5
0.5

3
0.2 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 0 5 10 15 20 25 30
FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V)

Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between


terminals characteristics

3 100
REVERSE RECOVERY TIME : trr (ns)

PULSE
SURGE CURRENT : Isurge (A)

VR=6V 50 Single pulse


Irr=1/10IR

2 20

10

5
1

0 1
0 10 20 30 0.1 1 10 100 1 000 10 000

FORWARD CURRENT : IF (mA) PULSE WIDTH : Tw (ms)

Fig.4 Reverse recovery time Fig.5 Surge current characteristics


characteristics

0.01µF D.U.T.

5Ω
PULSE GENERATOR SAMPLING
50Ω
OUTPUT 50Ω OSCILLOSCOPE

INPUT

100ns

OUTPUT
trr
0
0.1IR
IR

Fig.6 Reverse recovery time (trr) measurement circuit


This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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