Chip Schottky Barrier Diodes

FM220-LN THRU FM2100-LN

Formosa MS
Silicon epitaxial planer type
SMA-LN
Features 0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound. 0.110(2.8)
0.094(2.4)

For surface mounted applications.

0.181(4.6)
Exceeds environmental standards of MIL-S-19500 / 0.165(4.2)

228

0.075(1.9)
Low leakage current. 0.067(1.7)

0.040(1.0) Typ. 0.040 (1.0) Typ.

0.067(1.7)
0.053(1.3)

Mechanical data
Dimensions in inches and (millimeters)
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0017 ounce, 0.057 gram

MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)

PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT

Forward rectified current See Fig.1 IO 2.0 A

8.3ms single half sine-wave superimposed on

Forward surge current IFSM 50 A
rate load (JEDEC methode)

VR = VRRM TA = 25o C 0.5 mA

Reverse current IR
VR = VRRM TA = 125o C 10 mA
o
Thermal resistance Junction to ambient Rq JA 75 C / w

Diode junction capacitance f=1MHz and applied 4vDC reverse voltage CJ 160 pF
o
Storage temperature TSTG -55 +150 C

*1 *2 *3 *4 Operating
MARKING V RRM V RMS VR VF temperature
SYMBOLS
CODE
(V) (V) (V) (V) (o C)
FM220-LN SK22 20 14 20
FM230-LN SK23 30 21 30 0.50 -55 to +125

FM240-LN SK24 40 28 40
FM250-LN SK25 50 35 50 *1 Repetitive peak reverse voltage
0.70
FM260-LN SK26 60 42 60 *2 RMS voltage
-55 to +150
FM280-LN SK28 80 56 80 *3 Continuous reverse voltage
0.85
FM2100-LN S210 100 70 100 *4 Maximum forward voltage
 RATING AND CHARACTERISTIC CURVES (FM220-LN THRU FM2100-LN)

FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL FORWARD

CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)

2.4

2.0 50

1.6

INSTANTANEOUS FORWARD CURRENT,(A)

LN
10

0-
FM

1.2
FM

4
2

M2
22

50

LN
~F
0-

-L

0-
LN

N~

LN

26
0.8
~F

0-
FM

M
22

N
~F
3.0
M2

-L
10

FM

LN

00
40

0-

0-

21
-L

0.4
LN

25
N

M
FM

~F
LN
0 1.0

0-
28
0 20 40 60 80 100 120 140 160 180 200

FM
AMBIENT TEMPERATURE,( C) Tj=25 C
Pulse Width 300us
1% Duty Cycle

FIG.3-MAXIMUM NON-REPETITIVE FORWARD 0.1

SURGE CURRENT
50
PEAK FORWARD SURGE CURRENT,(A)

40 .01
.1 .3 .5 .7 .9 1.1 1.3 1.5

30
FORWARD VOLTAGE,(V)

Tj=25 C 8.3ms Single Half

20 Sine Wave

JEDEC method

10
FIG.5 - TYPICAL REVERSE
0 CHARACTERISTICS
1 5 10 50 100
100
NUMBER OF CYCLES AT 60Hz

FIG.4-TYPICAL JUNCTION CAPACITANCE 10

REVERSE LEAKAGE CURRENT, (mA)

700

600
JUNCTION CAPACITANCE,(pF)

500 1.0
Tj=75 C

400

300
.1
200
Tj=25 C

100

0 .01
.01 .05 .1 .5 1 5 10 50 100
0 20 40 60 80 100 120 140
REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)