ELECTRONIC HAND NOTE

ETO 2nd BATCH

***What is P-type & N-type semiconductor?
N-type semiconductor: When a small amount of pentavalent impurity is added to a pure
semiconductor, it is known as n-type semiconductor.

P-type Semiconductor: When a small amount of trivalent impurity is added to a pure

semiconductor, it is called p-type semiconductor.

***What is depletion region?Why it is formed?

Depletion region : When a region build up due to diffusion between n-type & p-type in the
PN junction is called depletion region.
It is formed due to diffusion.

***Draw F.B & R.B connection and V-I characteristics of a diode ?

Ans: F.B & R.B connection is given below,

V-I curve:-

Breakdown voltage. It is the minimum reverse voltage at which pn junction breaks

down with sudden rise in reverse current.
Knee voltage. It is the forward voltage at which the current through the junction starts
to increase rapidly
 Rectrifier
Types of rectifier:

Difference :
S. Particulars Half-wave Centre-tap Bridge type
No.
1 No. of diodes 1 2 4
2 Transformer necessary no yes no
3 Max. efficiency 40.6% 81.2% 81.2%
4 Ripple factor 1.21 0.48 0.48
5 Output frequency fin 2 fin 2 fin
6 Peak inverse voltage Vm 2 Vm Vm
***Draw the wave diagram of a rectifier(half & full wave)?

Full wave diagram & output wave:

Half wave diagram & output wave:

 Zener Diode
***Zenaer diode: A properly doped crystal diode which has a sharp breakdown voltage is
known as a zener diode
**NOTE:
Zener diode is used to control voltage.
It always work reverse bias .If we connected forward bias it work as like a normal diode.
SYMBOL: A K

Zener V-I curve:

Avalanche breakdown voltage. It is the maximum reverse voltage at which pn

junction breaks down and flow the reverse current rapidly ..
Zener breakdown voltage. It is the minimum reverse voltage at which the reverse
current through the zener diode starts to increase rapidly.
Zener Diode as Voltage Stabiliser:

Condition: R,IL,E=0
Example 6.25. For the circuit shown in Fig. 6.61 find :
(i) the output voltage (ii) the voltage drop across series resistance
(iii) the current through zener diode.

Solution. If we remove the zener diode, the voltage V across the open-circuit is
given by :
V= =80V
Since voltage across zener diode is greater than VZ (= 50 V), the zener is in the “on” state.
(i) Referring to Fig,
Output voltage = VZ = 50 V
(ii) Voltage drop across R = Input voltage − VZ = 120 − 50 = 70 V
(iii) Load current, IL = VZ/RL = 50 V/10 kΩ = 5 mA
Current through R, I =(70 V/5 kΩ)= 14 mA

Applying Kirchhoff’s first law, I = IL + IZ

∴ Zener current, IZ = I − IL = 14 − 5 = 9 mA
 SCR
Silicon Controlled Rectifier (SCR) is a unidirectional semiconductor device made of silicon.
Basically SCR is a three-terminal, three pn junctions and four-layer semiconductor device . The
figure below shows an SCR with the layers p-n-p-n. Three terminals are Anode(A), Cathode(K)
and Gate(G). The Gate terminal(G) is attached to the p-layer nearer to the Cathode(K) terminal.

NOTE: If three junction are at forward bias it will be conduction mode otherwise scr will not
performed.

The SCR basically works in three modes. Such as ,

 Forward Blocking Mode

 Reverse Blocking Mode
 Forward Conduction Mode
Working process:

 Forward Blocking Mode

Here,
 =0
 J1&J3 = F.B
J2 = R.B

 Reverse Blocking Mode

Here,
 =0
 J1&J3 = R.B
J2 = F.B

 Forward Conduction Mode

Here,
 >0
 J1&J3 =F.B
J2 = F.B
***Why controlled diode needed?
COZ: In normal diode the conduction begins just after knee voltage. So we cannot get
output as we want. If we can control the conduction period of diode. We can
manipulate our output as we want. So control diode is needed

SCR V-I curve :

GTO: GTO means gate turn off. A Gate Turn off Thyristor or GTO is a three
terminal, bipolar semiconductor switching device. It is used as alternative of
thyristor. The GTO has faster switching speed than the thyristor.
V-I curve

FET
*****FET means Field effect transistor.It is a voltage-controlled device.It`s classification is given
below,
 JFET
JFET means Junction Field effect transistor.A JFET consists of a p-type or n-type silicon bar
containing two pn junctions at the sides as shown in Figure. The bar forms the conducting channel
for the charge carriers. If the bar is of n-type, it is called n-channel JFET as shown in Fig.(i) and if the
bar is of p-type, it is called a p-channel JFET as shown in Fig.(ii). The two pn junctions forming diodes
are connected *internally and a common terminal called gate is taken out. Other terminals are
source and drain taken out from the bar as shown. Thus a JFET has essentially three terminals such
as, gate (G), source (S) and drain (D).

Working process:

When VGS=0V,
If we supply VDD voltage ,then ID current will start flow .As a result pn junction get
reverse bias . In this case depletion layer become wide.If we continuously increase
VDD voltage depletion layer become more & more wider.For this reason I D current
reaches saturation stage.And the voltage at which the I D current is reached
saturation stage is called pinch of voltage .
When Vgs >0
In this case pn junction is first widened due to the reverse bias .For this reason I D
current will reach the saturation faster than previous stage .If we are changing the
vgs voltage ,we can change ID current of the device.
V-I curve:

Pinch off Voltage (VP): It is the minimum drain-source voltage at which the drain
current essentially becomes constant.
MOSFET
MOSFET means Metal Oxide Semiconductor Field Effect Transistor. It is basically two types such
as (a) E-MOSFET (b) D-MOSFET.
Structure & Working principal of a E-MOSFET:-
**Structure : Basically a substrate of lightly doped p-type semiconductor forms the main body of
the device. Two heavily doped n-type regions are there in the body separated by a certain distance.
Now there is a thin layer of silicon dioxide (SiO2) on the top of the substrate. This layer on the
substrate behaves as a dielectric. There is an aluminum plate fitted on the top of this SiO2 dielectric
layer. Now the aluminum plate, dielectric and semiconductor substrate form a capacitor on the
device. The terminals connected to two n-type regions are the source (S) and drain (D) of the device
respectively. The terminal projected from the aluminum plate of the capacitor is gate (G) of the
device. We also connect the source and body of the mosfet to earth. The figure is given below,
Working principal: When we apply +VE voltage at gate terminal , capacitor is
formed . As a result negative charge(free electron/minority carriers) gets accumulated just below
the dielectric(SiO2)layer.If we continually increase the positive gate voltage more free electrons
starts to gather below SiO2 layer and creates a conductive channel of free electrons.Now if we
apply a positive voltage at the drain,currents starts flowing through the channel .If we are
changing the positive voltage on the gate, we can change the conductivity of the channel..CKT
diagram & V-I curve is given below.

V-I curve:

****The minimum value of VGS that turns the E-MOSFET ON is called

threshold voltage [VGS (th)].
Structure & Working principal of a D-MOSFET:

Working Process:

V-I curve: