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Analog & Digital VLSI Design Handout - Revised PDF
Analog & Digital VLSI Design Handout - Revised PDF
Learning Outcomes:
After successful completion of the course student will be able to
1. Design & Analyze any CMOS Circuits such as Arithmetic and Logic Blocks.
2. Design any Logic Circuit and their stick diagrams in all formats of design.
3. Design Layout with Design Constraints using MICROWIND hardware design software.
4. Analyze Circuits in advanced circuits of the current trends.
5. Visualize practically the fabrication process of the Intel Processors, IBM Processors.
Lecture-wise plan:
Reference
Lecture (Chapter/Sec./Page
Learning Objective Topics to be covered
Nos. Nos. of Text/Ref.
Books)
Introduction to VLSI Design Introduction to VLSI Design
1 Ch.1.1- T
Flow concepts and methods Methodologies
Basic steps in MOS
Fabrication, Layout MOS Processing, Design rules,
2-4 Ch 2.1-2.5-T
design rules and effect stick diagrams
of MOS Capacitances
Structure & operation of MOS,
5-6 MOSFET Transistor Ch.3.3,3.6- T
MOS Capacitances
Non-saturation and saturation, Gradual
MOSFET Current -voltage
7-8 Channel approximation, Channel length Ch 3.4-T Ch.1 R4
characteristics
modulation
Understanding the operation
VTC, Resistive load inverter, Inverters
and DC characteristics of the
9-11 with n-Type MOSFET load, CMOS Ch 5.1-5.4- T
MOS Inverters with different
inverter
loads
Switching characteristics of
MOS inverters , delay MOS Inverter - Switching
12-15 Ch 6.1-6.6 T
estimation and the effect of Characteristics and interconnect effects
interconnects
Implementation of
16,18 combinational circuits using NMOS Combinational logic circuits Ch 7.1-7.3 T
NMOS depletion loads
Implementing CMOS logic
19-21 gates, Layout of CMOS logic CMOS Combinational logic circuits Ch 7.4-7.5 T
circuits, Pass Gates
CMOS
Implementation of Dynamic Logic Gates and Flip-
22-25 sequential circuits, Flops: Design of Sequential Ch 8.1-8.5 T
Introduction to circuits
dynamic logic circuits
Semiconductor memories
26-30 Understanding the operation (i) Introduction, DRAM ,
Ch 10.1-10.6 T
of semiconductor memories SRAM
(ii) Flash Memory and FRAM
Power consumptions
31-34
i)switching power dissipation&
Introduction to the Low
reduction Ch 11.1-11.3 T
power CMOS logic circuits
ii)Short circuit power dissipation
ii) Leakage power dissipation
MOS small-signal model,
Introduction to Analog (i)Common source Amplifier
35-38 Ch 1.1-1.4 R1
Circuits (ii)CMOS inverter as an Amp.
(iii)Current Mirrors
Basic Operational amplifier
39-41 Operational Amplifiers Ch 1.5-1..6 R1
design
DAC and ADC converter Analog to Digital converter
42-45 Ch 1.7- 1.9 R1
Basics Digital to Analog converter
Evaluation Syllabus
Duration Weightage Date Remarks
Component (Lec.No.)
Test1 50 Minutes 20M 07/02/2020 1-15 CB
Test2 50 Minutes 20M 06/03/2020 1-30 CB
Test3 50 Minutes 10M 17/04/2020 1-45 OB
Unannounced
20 Minutes 10M
Quizzes(2)
Comprehensive
3 hours 40M 14/05/2020 1-45 CB
Exam
Make-up Policy: Prior and proper information to the concerned instructor is a must and the student
should maintain a minimum attendance.
General: All students are advised to attend classes regularly and strictly maintain an attendance of
75% at least. Students failing to maintain the required percentage of theory/practical attendance will
not be permitted to appear for the tests and examinations.
It is expected that students refrain from using cell phones during lectures and in the labs. The cell
phone must be kept switched off and used only during recess or outside class hours.