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The electromagnetic property of chemically reduced graphene oxide and its

application as microwave absorbing material


Chao Wang, Xijiang Han, Ping Xu, Xiaolin Zhang, Yunchen Du et al.

Citation: Appl. Phys. Lett. 98, 072906 (2011); doi: 10.1063/1.3555436


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APPLIED PHYSICS LETTERS 98, 072906 共2011兲

The electromagnetic property of chemically reduced graphene oxide and


its application as microwave absorbing material
Chao Wang,1 Xijiang Han,1,a兲 Ping Xu,1 Xiaolin Zhang,1 Yunchen Du,1 Surong Hu,1
Jingyu Wang,1 and Xiaohong Wang2
1
Department of Chemistry, Chemistry Laboratory Center, Harbin Institute of Technology, Harbin 150001,
People’s Republic of China
2
Beijing Institute of Aeronautical Materials, Beijing 100095, People’s Republic of China
共Received 4 December 2010; accepted 5 January 2011; published online 18 February 2011兲
The residual defects and groups in chemically reduced graphene oxide cannot only improve the
impedance match characteristic and prompt energy transition from contiguous states to Fermi level,
but also introduce defect polarization relaxation and groups’ electronic dipole relaxation, which are
all in favor of electromagnetic wave penetration and absorption. The chemically reduced graphene
oxide shows enhanced microwave absorption compared with graphite and carbon nanotubes, and
can be expected to display better absorption than high quality graphene, exhibiting a promising
prospect as microwave absorbing material. © 2011 American Institute of Physics.
关doi:10.1063/1.3555436兴

Graphene is a two-dimensional sheet of carbon atoms demonstrates that the residual defects and groups may be
that bonded together in a hexagonal lattice. The extended beneficial for the electromagnetic wave absorption, which is
honeycomb network of graphene is the basic building block an interesting and valuable exploration in the physical appli-
of other important allotropes including fullerenes, nanotubes, cation of r-GO.
and graphite.1,2 The development of graphene has attracted Briefly, graphite oxide 共GO兲 was first synthesized from
much attention due to its remarkable physical and chemical graphite powder by a modified Hummers method, then it was
properties since it was discovered by mechanical exfoliation reduced with hydrazine to prepare r-GO according the re-
in 2004.3 For example, graphene is a promising candidate in ported procedure.14 The permittivity real part 共␧⬘兲 and imagi-
the applications such as paperlike materials,4,5 liquid crystal nary part 共␧⬙兲 of graphite increase with the increase in fre-
devices,6 super capacitor,7 and polymer composites.8,9 quency from 2 GHz due to Maxwell–Wagner polarization
Graphene can usually be made by four different methods effect, till reaching the peaks at 2.5 GHz for ␧⬘ and 4 GHz
including chemical vapor deposition,10 micromechanical ex- for ␧⬙ as shown in Fig. 1共a兲. Then, the permittivity starts to
foliation of graphite,11 epitaxial growth,12 and chemical re- decrease as the frequency increasing, exhibiting obvious
duction from graphene oxide.13,14 In this research, we pre-
frequency-dependent dielectric response. This may arise
pare chemically reduced graphene oxide 共r-GO兲 due to its
from the lag of the induced charges to follow the reversing
scalability, high yield, and the easiness of chemical function-
external field at high frequencies and finally causes a reduc-
alization. These advantages mean the r-GO would be used
tion in the electronic oscillations.25 The two permittivity
for a wide range of applications.
peaks of graphite indicate a resonance behavior, which usu-
The microwave absorbing material has received much
ally emerges when the material is highly conductive.19
attention because of their prospective applications in elec-
tronic instruments in industry, commerce, and military After strong oxidation, sp2-bonded carbon network of
affairs.15 Most of the microwave absorbing materials are graphite is intensively disrupted and a significant fraction of
composed of magnetic loss powders such as ferrite,16 the carbon network is bonded to hydroxyl, epoxide, carboxy-
nickel,17 cobalt,18 and dielectric loss materials such as carbon lic, and carbonyl groups.26 Here, we do not list the permit-
nanotubes 共CNTs兲 and conducting polymers.19–21 Though the tivity and permeability of GO due to its nonconductive and
microwave absorbing ability of CNTs is extremely weak, nonmagnetic property. For r-GO, the excellent hexagonal
previous reports demonstrate that the composites of CNTs “graphene” framework cannot be completely recovered after
and magnetic materials would exhibit excellent microwave reduction due to the existence of residual groups and defects
absorbing property.15,22,23 Therefore, first, as a kind of new such as the missing carbon atoms and sheet corrugation, so
carbon material, r-GO may also be a potential microwave the conductivity of r-GO would be decreased compared with
absorbing material just as CNTs. Second, though the pub- that of graphite.13,26 Therefore, the ␧⬘ and ␧⬙ resonance peaks
lished work shows that r-GO can be used as electromagnetic of r-GO disappear. According the free electron theory, low
interface shielding material,24 little research has concerned conductivity would result in low permittivity,21,27 that’s why
the electromagnetic wave absorbing property of r-GO. The the ␧⬘ and ␧⬙ of r-GO are low and exhibit a slightly decrease
above two reasons motivate us to investigate the electromag- as the frequency increasing compared with those of graphite.
netic wave absorbing ability of r-GO. There is a traditional Figure 1共b兲 exhibits the permeability real part 共␮⬘兲 and
view that the residual defects and groups in r-GO would imaginary part 共␮⬙兲 of graphite and r-GO, which demon-
degrade the device performance,5 however, our research strates that both ␮⬘ and ␮⬙ are very low due to the weak
magnetic characteristic. Especially, the ␮⬘ and ␮⬙ of graphite
a兲
Author to whom correspondence should be addressed. Electronic mail: vary little from 4 to 18 GHz, and ␮⬘ of r-GO increases while
hanxj63@yahoo.com.cn. ␮⬙ of r-GO decreases compared with those of graphite.

0003-6951/2011/98共7兲/072906/3/$30.00 98, 072906-1 © 2011 American Institute of Physics

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072906-2 Wang et al. Appl. Phys. Lett. 98, 072906 共2011兲

FIG. 1. 共Color online兲 共a兲 Frequency dependence of relative complex per- FIG. 3. Typical Cole–Cole semicircles 共␧⬙ vs ␧⬘兲 for graphite 共a兲 and r-GO
mittivity real part 共␧⬘兲 and imaginary part 共␧⬙兲. 共b兲 Frequency dependence of 共b兲 in the frequency range of 2–18 GHz.
relative complex permeability real part 共␮⬘兲 and imaginary part 共␮⬙兲.
r-GO, so the problem is why the r-GO with lower ␧⬙ owns
The dependence of microwave absorption 共reflection stronger microwave absorption than graphite?
loss兲 property on permittivity and permeability can be evalu- First, based on previous reports,21,29 apart from dielectric
ated by the following equation: loss and magnetic loss, another important concept relating to
microwave absorption is impedance match characteristic, too
RL = 20 log兩共Zin − Z0兲/共Zin + Z0兲兩, 共1兲
high permittivity of absorber is harmful to the impedance
where Z0 is the impedance of free space and Zin is the input match and results in strong reflection and weak absorption.19
characteristic impedance, which can be expressed as That is one of the reasons why r-GO with low permittivity
Zin = Z0冑共␮r/␧r兲tanh兵j共2␲ fd/c兲冑␮r␧r其,
exhibits stronger microwave absorption than graphite. Sec-
共2兲 ond, energy transition of microwave band involves the elec-
where c is the velocity of light and d is the thickness of an tronic spin, which means greater spin states are required for
absorber. Figure 2 apparently demonstrates that r-GO exhib- microwave absorption. It has been documented that localized
its much better microwave absorbing ability than graphite. states near to the Fermi level could be created via introduc-
Generally, the real parts of relative complex permittivity and ing lattice defects30 and electromagnetic energy can be ab-
permeability symbolize the storage ability of electromagnetic sorbed by the transition from contiguous states to Fermi level
energy, and the imaginary parts represent the electromagnetic when the irradiation is incident on the absorber surface.31
energy loss ability.28 Due to the magnetism is weak, dielec- Therefore, the existence of defects in r-GO is in favor of the
tric loss is the main microwave absorbing mechanism of electromagnetic energy absorption, which is another reason
why r-GO exhibits better absorbing ability.
Third, an important mechanism for dielectric loss mate-
rial to absorb electromagnetic wave arises from the relax-
ation process. According to the Debye relaxation expression,
the complex permittivity can be written as

共␧⬘ − ␧⬁兲2 + 共␧⬙兲2 = 共␧s − ␧⬁兲2 , 共3兲


where ␧s and ␧⬁ are the static dielectric constant and the
dielectric constant at infinite frequency, respectively. Thus,
the plot of ␧⬙ versus ␧⬘ would be a single semicircle, which
can be defined as the Cole–Cole semicircle.21,32 Figure 3
shows the curve characteristic of ␧⬙ versus ␧⬘, which pre-
sents a clear segment of three overlapped Cole–Cole semi-
circles for r-GO but only one semicircle for graphite. This
FIG. 2. Microwave absorption characteristics of graphite and r-GO at the suggests that there is sole relaxation process for graphite and
thickness of 2 mm. ternary relaxation processes for r-GO, with each semicircle

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072906-3 Wang et al. Appl. Phys. Lett. 98, 072906 共2011兲

corresponding to one Debye relaxation process. shows enhanced microwave absorption compared with
The sole relaxation process of graphite may arise as fol- graphite and CNTs, and can be expected to display better
lowing: under the alternating electromagnetic field, the lag of absorption than high quality graphene.
induced charges which counters the external applied field
1
results in the relaxation and transfers the electromagnetic en- S. J. Park and R. S. Ruoff, Nat. Nanotechnol. 4, 217 共2009兲.
2
ergy to heat energy, so the microwave is attenuated.33,34 Be- G. F. Zou, M. K. Jain, H. Yang, Y. Y. Zhang, D. Williams, and Q. X. Jia,
Nanoscale 2, 418 共2010兲.
cause of numerous delocalized electrons in conductive 3
K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V.
graphite, this dielectric relaxation process is obvious and a Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 共2004兲.
big Cole–Cole semicircle emerges as shown in Fig. 3共a兲. 4
H. B. Li, L. Zou, L. K. Pan, and Z. Sun, Environ. Sci. Technol. 44, 8692
Hence, the dielectric relaxation is the main reason for graph- 共2010兲.
5
ite to absorb microwave. M. J. Allen, V. C. Tung, and R. B. Kaner, Chem. Rev. 共Washington, D.C.兲
It is well-known that there are residual defects and 110, 132 共2010兲.
6
P. Blake, P. D. Brimicombe, R. R. Nair, T. J. Booth, D. Jiang, F. Schedin,
groups in r-GO.1,5,13,26 As to r-GO, carbon framework is L. A. Ponomarenko, S. V. Morozov, H. F. Gleeson, and E. W. Hill, Nano
partly reconstructed, so the dielectric relaxation process that Lett. 8, 1704 共2008兲.
7
caused by the lag of induced charges occurs just as it hap- Y. W. Zhu, S. Murali, M. D. Stoller, A. Velamakanni, R. D. Piner, and R.
pens in graphite, but it is not as obvious as that in graphite S. Ruoff, Carbon 48, 2118 共2010兲.
8
for the existence of disrupted graphene lattice. Therefore, the S. Stankovich, D. A. Dikin, G. H. B. Dommett, K. M. Kohlhaas, E. J.
Zimney, E. A. Stach, R. D. Piner, S. T. Nguyen, and R. S. Ruoff, Nature
corresponding Cole–Cole semicircle becomes smaller. 共London兲 442, 282 共2006兲.
The additional two relaxation processes of r-GO are ob- 9
T. Ramanathan, A. A. Abdala, S. Stankovich, D. A. Dikin, M. Herrera-
viously arising from defects and groups. First, defects can act Alonso, R. D. Piner, D. H. Adamson, H. C. Schniepp, X. Chen, R. S.
as polarization centers, which would generate polarization Ruoff, S. T. Nguyen, I. A. Aksay, R. K. Prudhomme, and L. C. Brinson,
relaxation under the altering electromagnetic field and at- Nat. Nanotechnol. 3, 327 共2008兲.
10
A. Ismach, C. Druzgalski, S. Penwell, A. Schwartzberg, M. Zheng, A.
tenuate electromagnetic wave, resulting a profound effect on
Javey, J. Bokor, and Y. G. Zhang, Nano Lett. 10, 1542 共2010兲.
the loss of microwave.19 Second, there are residual oxygen- 11
J. Moser, A. Verdaguer, D. Jimenez, A. Barreiro, and A. Bachtold, Appl.
containing chemical bonds such as C u O, C v O in the Phys. Lett. 92, 123507 共2008兲.
r-GO.26 The different ability to catch electrons between car- 12
C. Berger, Z. M. Song, X. B. Li, X. S. Wu, N. Brown, C. Naud, D. Mayou,
bon atom and oxygen atom results in electric dipole polar- T. B. Li, J. Hass, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. A.
ization, while this kind of dipole polarization is absent for de Heer, Science 312, 1191 共2006兲.
13
S. Stankovich, D. A. Dikin, R. D. Piner, K. A. Kohlhaas, A. Klein-
graphite. Therefore, the electron motion hysteresis in these hammes, Y. Y. Jia, Y. Wu, S. T. Nguyen, and R. S. Ruoff, Carbon 45, 1558
dipoles under alternating electromagnetic field induces addi- 共2007兲.
tional polarization relaxation process which is favorable in 14
D. Li, M. B. Muller, S. Gilje, R. B. Kaner, and G. G. Wallace, Nat.
enhancing microwave absorbing ability. Nanotechnol. 3, 101 共2008兲.
15
Finally, we should compare the microwave absorbing L. J. Deng and M. G. Han, Appl. Phys. Lett. 91, 023119 共2007兲.
16
C. L. Zhu, M. L. Zhang, Y. J. Qiao, G. Xiao, F. Zhang, and Y. J. Chen, J.
ability between r-GO and high quality graphene, CNTs. The
Phys. Chem. C 114, 16229 共2010兲.
high quality graphene made by mechanical exfoliation 17
Y. D. Deng, L. N. Li, B. Shen, L. Liu, and W. B. Hu, J. Appl. Phys. 100,
method would introduce little defect and chemical group,5 014304 共2006兲.
18
which is obviously more conductive than r-GO. As discussed C. Wang, X. J. Han, X. L. Zhang, S. R. Hu, T. Zhang, J. Y. Wang, Y. C.
above, high conductivity can result in high permittivity, Du, X. H. Wang, and P. Xu, J. Phys. Chem. C 114, 14826 共2010兲.
19
which is harmful for microwave absorption according to the R. C. Che, L. M. Peng, X. F. Duan, Q. Chen, and X. L. Liang, Adv. Mater.
共Weinheim, Ger.兲 16, 401 共2004兲.
impedance match characteristic. Hence, though we cannot 20
H. T. Zhao, X. J. Han, M. F. Han, L. F. Zhang, and P. Xu, Mater. Sci. Eng.,
measure real microwave absorbing ability of high quality B 167, 1 共2010兲.
21
graphene because of its low yield, it is reasonable to accept P. Xu, X. J. Han, C. Wang, D. H. Zhou, Z. S. Lv, A. H. Wen, X. H. Wang,
that high quality graphene with little defect and group will and B. Zhang, J. Phys. Chem. B 112, 10443 共2008兲.
22
display poor microwave absorption compared with r-GO. R. T. Lv, A. Y. Cao, F. Y. Kang, W. X. Wang, J. Q. Wei, J. L. Gu, K. L.
Wang, and D. H. Wu, J. Phys. Chem. C 111, 11475 共2007兲.
In addition, previous reports demonstrate that CNTs display 23
R. T. Lv, F. Y. Kang, J. L. Gu, X. C. Gui, J. Q. Wei, K. L. Wang, and D.
very poor microwave absorption no less than ⫺2 dB, but H. Wu, Appl. Phys. Lett. 93, 223105 共2008兲.
the composites of CNTs and magnetic metals 共Fe, Co, and 24
J. J. Liang, Y. Wang, Y. Huang, Y. F. Ma, Z. F. Liu, J. M. Cai, C. D. Zhang,
Ni兲 would exhibit much enhanced microwave H. J. Gao, and Y. S. Chen, Carbon 47, 922 共2009兲.
25
absorption.15,19,20,22,23 In this research, the r-GO exhibits mi- V. Panwar and R. M. Mehra, Polym. Eng. Sci. 48, 2178 共2008兲.
26
J. I. Paredes, S. Villar-Rodil, P. Solis-Fernandez, A. Martinez-Alonso, and
crowave absorbing intensity as much as ⫺6.9 dB at 7 GHz,
J. M. D. Tascon, Langmuir 24, 10560 共2008兲.
which is obviously stronger than the reported CNTs,19,20 so 27
X. F. Zhang, X. L. Dong, H. Huang, Y. Y. Liu, W. N. Wang, X. G. Zhu, B.
we believe r-GO/magnetic metals composites will display Lv, J. P. Lei, and C. G. Lee, Appl. Phys. Lett. 89, 053115 共2006兲.
28
excellent microwave absorbing property. Further experiment X. F. Zhang, P. F. Guan, and X. L. Dong, Appl. Phys. Lett. 96, 223111
is undergoing. 共2010兲.
29
J. P. Berenger, J. Comput. Phys. 114, 185 共1994兲.
In summary, there is only one dielectric relaxation pro- 30
V. V. Belavin, A. V. Okoyrub, and L. G. Bulusheva, Phys. Solid State 44,
cess for graphite and its impedance match characteristic is 663 共2002兲.
poor, which result the weak microwave absorbing ability. 31
P. C. P. Watts, W. K. Hsu, A. Barnes, and B. Chambers, Adv. Mater.
However, the residual defects and groups in r-GO not only 共Weinheim, Ger.兲 15, 600 共2003兲.
32
can improve the impedance match characteristic but also in- X. L. Dong, X. F. Zhang, H. Huang, and F. Zuo, Appl. Phys. Lett. 92,
troduce the transition from contiguous states to Fermi level, 013127 共2008兲.
33
T. J. Imholt, C. A. Dyke, B. Hasslacher, J. M. Perez, D. W. Price, J. A.
defect polarization relaxation, and groups’ electronic dipole Roberts, J. B. Scott, A. Wadhawan, Z. Ye, and J. M. Tour, Chem. Mater.
polarization relaxation, which are all in favor of electromag- 15, 3969 共2003兲.
34
netic wave penetration and absorption. As a result, r-GO E. Vázquez and M. Prato, ACS Nano 3, 3819 共2009兲.

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