SG250HX MTBF Calculation

SG250HX MTBF Calculation

Version Date Author Approved by
V11 Jul.20.2019, Jul.26,2019 Liu B Shi CP

1.Introduction

This document describes the MTBF calculation for Sungrow inverter SG250HX based on SR-332, Issue 4.
This document is intended to be used by the specific addressees. No part of this document may be reproduced or
distributed in any form or by any means, without the prior written permission of Sungrow Power Supply Co., Ltd.

2.List of MTBF Calculation

Reference Standard: Telcordia SR-332, Issue 4, the Telcordia Technologies Special Report for reliability prediction
procedure for electronic equipment.

2.1. Analysis Method

Failure rate of device in SR-332 Issue 4 is defined as:

𝜆𝑆𝑆𝑖 = 𝜆𝐺𝑖 𝜋𝑄𝑖 𝜋𝑆𝑖 𝜋 𝑇𝑖

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Where 𝜆𝑆𝑆𝑖 : Steady-state failure rate for device i, Failure rate=Failures/10 Hours=Failures *FITs
𝜆𝐺𝑖 : Mean generic steady-state failure rate for device i
𝜋𝑄𝑖 : Quality Factor of device i
𝜋𝑆𝑖 : Electrical Stress Factor of device i
𝜋 𝑇𝑖 : Temperature Factor of device i

The failure rate prediction for a unit is based on the failure rates predicted for its device components. This prediction
technique is commonly known as the “Parts Count” method in which the mean unit failure rate 𝜆𝑆𝑆 is assumed to be
equal to the sum of the device failure rates.
𝑛

𝜆𝑆𝑆 = ∑ 𝑁𝑖 𝜆𝑆𝑆𝑖
𝑖=1

Where 𝜆𝑆𝑆 : Unit steady-state failure rate, 𝜆𝑆𝑆𝑖 : Steady-state failure rate for device i
𝑁𝑖 : Quantity of device i in the unit, n : Number of device categories in the unit

The relationship between failure rate and MTBF (Mean Time Between Failures) (hours) is:
1
MTBF =
𝜆
2.2. MTBF Calculation

Series Configuration: All items must work for the system to work. As shown below, the system fails if either Block A
or Block B fails.

λSYS(S)
λA λB

Block A Block B

Fig.1 Series Configuration

𝜆𝑆𝑌𝑆(𝑆) = 1 − (1 − 𝜆𝐴 )(1 − 𝜆𝐵 )

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SG250HX MTBF Calculation

Parallel Configuration: Items are considered to be redundant. As shown below, the system will continue to function if
either Block A or Block B fails.

Block A

λA
λSYS(P)

λB

Block B

Fig.2 Parallel Configuration

𝜆𝑆𝑌𝑆(𝑃) = 𝜆𝐴 𝜆𝐵

Where 𝜆𝑆𝑌𝑆(𝑆) : The total serial system failure rate,𝜆𝑆𝑌𝑆(𝑃) : The total parallel system failure rate.

2.3. Calculation Result

λssi_40℃
QTY λssi・Ni_40℃
Classification Part Name
(Ni) (FIT)

Silicon Diode（>20A) 4.6 48 220.8

Silicon Diode（≤ 20A) 0.33 297 98.01
1 Diode
Schottky diode 0.33 103 33.99
LEDS(Single LED/LCD Segment) 0.25 57 14.25
Power transistor (IGBT) 3.2 42 134.4
2 Transistor Transistor (NPN/PNP) 1.77 123 217.71
MOSFET 3.44 60 206.4
Triac Triac（> 1.5 W) 9.3 8 74.4
3 (Voltage
Regulator) Triac（≤ 1.5 W) 0.9 53 47.7

IC 1.2 154 184.8

3-terminal regulator
72 0 0
4 IC (Thyristor)（> 1A）
3-terminal regulator 13 0 0
(Thyristor)（≤ 1A）
Film（Carbon、Metal）resistor 0.08 2625 210
Powertype resistor 0.3 29 8.7
Power type
0.8 13 10.4
5 Resistor wirewound resistor
Variable resistor 7.3 8 58.4
Thermistor
(Polymetric Positive Temperature 5.1 10 51
Coefficient Device)
Aluminum electroytic capacitor
0.73 131 95.63
（＜400uF）
Aluminum electroytic capacitor
1.5 91 136.5
6 Capacitor （≥400uF）
Tantalim electroytic capacitor 3.6 0 0
Film capacitor 0.46 142 65.32
Ceramic capacitor 0.1 1793 179.3
Transformer for
7 Inductor 11 27 297
Electric power(> 1W)

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SG250HX MTBF Calculation

Reactor for electric power(Power Filter) 0.24 61 14.64

Transformer for
0.1 23 2.3
small electric power
Ferrite Beads 0.1 44 4.4

Fuse(≤ 30A) 0.4 4 1.6

8 Fuse Thermal cutoff 0.4 0 0
Thermal cutoff with resistor 0.4 0 0
Toggle switch 10.3 3 30.9
Pushbutton 1.99 0 0
Relay(General Purpose) 1.9 23 43.7
9 Switch Contactor 140 0 0
AC Load Switch
50 0 0
(Circuit Breaker)
DC Switch (Circuit Breaker) 50 4 200
Connector 0.19 387 73.53
Fan (Equipment Fan) 300 7 2100
Quartz Crystal 3.14 5 15.7
10 Others Opto 2.1 53 111.3
Gas discharge Tube 60 4 240
SPD 50 25 1250
Battery（Lithium） 25 1 25
Total Σ λssi・Ni（FIT） 6458
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MTBF(H) 1/(Σλssi・Ni×10 ） 154852

Temperature inside
Inverter Failure rates(FITs) Predicted MTBF(Hours)
chamber
SG250HX 40℃ 6458 154852

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