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D3SBA10 ~ D3SBA80 SILICON BRIDGE RECTIFIER

PRV : 100 ~ 800 Volts 0.150 (3.8)


0.134 (3.4)
C3
0.996 (25.3) 0.189 (4.8)
Io : 4.0 Amperes

0.134(3.4)
0.122(3.1)
0.972 (24.7) 0.173 (4.4)

0.603(15.3)
0.579(14.7)
FEATURES :

0.383(9.7)
0.367(9.3)
* High current capability
* High surge current capability
* High reliability + ~ ~
0.075 (1.9)
* Low reverse current

0.130(3.7)
0.146(3.3)
0.060 (1.5)

0.709 (18)
0.669 (17)
* Low forward voltage drop
* Ideal for printed circuit board 0.043 (1.1)
* Very good heat dissipation 0.035 (0.9)
* Pb / RoHS Free 0.114 (2.9)
0.303 (7.7)
MECHANICAL DATA : 0.287 (7.3)
0.098 (2.5)
0.032 (0.8)
* Case : Reliable low cost construction 0.043 (1.1)
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per Dimensions in inches and (millimeters)
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 4.28 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS


Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

D3SBA D3SBA D3SBA D3SBA D3SBA


RATING SYMBOL UNIT
10 20 40 60 80
Maximum Reverse Voltage V RM 100 200 400 600 800 V
Maximum Average Forward Current 4 (With heatsink, Tc = 108°C)
IF(AV) A
(50Hz Sine wave, R-load) 2.3 (Without heatsink, Ta = 25°C)
Maximum Peak Forward Surge Current
IFSM 80 A
( 50 Hz, Half-cycle, Sinwave, Single Shot )
Current Squared Time at 1ms ≤ t < 10 ms, Tc=25°C I2 t 32 A2S
Maximum Forward Voltage per Diode at I F = 2.0 A. VF 1.05 V
Maximum DC Reverse Current, V R=VRM
IR 10 µA
( Pulse measurement, Rating of per diode)
Maximum Thermal Resistance, Junction to case RθJC 5.5 (With heatsink) °C/W
Maximum Thermal Resistance, Junction to Ambient RθJA 30 (Without heatsink) °C/W
Operating Junction Temperature Range TJ 150 °C
Storage Temperature Range T STG - 40 to + 150 °C

Page 1 of 2 Rev. 02 : March 25, 2005


RATING AND CHARACTERISTIC CURVES ( D3SBA10 ~ D3SBA80)

FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK


RECTIFIED CURRENT FORWARD SURGE CURRENT
6 120

PEAK FORWARD SURGE CURRENT,


Non-repetitive
AVERAGE FORWARD OUTPUT

5 Sine wave, R-load on heatsink 100 TJ = 25°C


CURRENT, AMPS

4 80

AMPS
3 60

2 40

1 20

0 0
80 90 100 110 120 130 140 150 1 2 4 6 10 20 40 60 10

CASE TEMPERATURE, ( °C) NUMBER OF CYCLES

FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - POWER DISSIPATION


PER DIODE
100 14
POWER DISSIPATION , WATTS

Sine wave
12
TJ = 150 °C
FORWARD CURRENT, AMPS

10
10

1.0
4
TL = 25 °C
2

0.1 0
0 1 2 3 4 5 6 7
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

FORWARD VOLTAGE, VOLTS AVERAGE RECTIFIED


CURRENT, AMPS

Page 2 of 2 Rev. 02 : March 25, 2005

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