392

IEEE Transactions on Electron Devices, vol. ED-11(8), pp. 392-397, Aug. 1964.

IEEIE Standard Letter Symbols

for Semiconductor

CONTENTS Examples: io,, I,,, IC,,

1) Electrical Quantities 1.2.4 Symbols t o be used as subscripts. (For example,
1.1 Quantity Symbols
1.2 Subscripts for Quantity Symbols see Fig. 1 and Basic Symbols Chart 1.2.5.)
1.3 TheSubscript SequenceConforms to the Mathematical
Convention for Writing DeterminantsfromaSet of E, e = emitter terminal
Fundamental Kirchhoff's Equations B, b = base terminal
2) Electrical Parameters c, c = coIIector terminal
2.1 Parameter Symbols J, j = terminal, general
2.2 Subscript for Parameter Symbols
A, a = anode terminal
3) Letter Symbols in Alphabetical Order
K, k = cathode terminal
G, g = gate terminal
1. ELECTRICAL
QUANTITIES
x, x = circuit node
1 .I Quantity Symbols M, m = maximum value
Min, min = minimum value
1.1.1 Instantaneous values of current, voltage, and (AV) = average value
power, that vary with time, are represented by the lower-
case letter of the proper symbol. 1.2.5 A final subscript may be used t o identify the
Examples: i, u, p termination of the port other than the one to which the
quantity is referred :
1.1.2 Maximum (peak), average (direct-current), and
root-mean-square values of current, voltage, and power
O = Open-circuit termination
are represented by the upper-case letter of the appropriate
S = Short-circuit termination
X = General termination
symbol.
Examples: I, V , P R = Resistive termination
V = Bias-Voltage termination.
1-2 Subscripts for Quantity Symbols
1.2.1 Direct-current values andinstantaneoustotal
values are indicated by upper-case subscripts.
Examples: &, IC, vEB, V E B , PC, PC
1.2.2 Alternating-component values are indicated by
lower-case subscripts.
Examples: io, I,, Veb, Veh,P , , PC
1.2.3 T o distinguish betweenmaximum (peak), aver-
age, and root-mean-squarevalues,maximum values are
represented by the addition of a subscript M or m, and
average by (AV).
Note: Where this distinction is not necessary, the ad- PEAK)
UUE
ditional subscript may be omitted.

Copies of this Standard may be purchased from the Institute

of Electrical and ElectronicsEngineers, Box A, Len- Hill Station,
New York, N. Y., 10021, at $1.00 per copy t o members, and $3.00
per copy t o nonmembers. Fig. I-Illustration of proper symbol usage.
1964 Devices
Symbols for Semiconductor
This subscript should be upper case if the-other subscripts
are upper case, and lower case if the other subscripts are
are lower case.
Example: IC,,, I C E s, V(BR)CER
1.2.6 Basic Symbols Chart (Table I)
e
b Instantaneous Root-Mean-Square Valueof
C Value ?f Alternating Component
j Alternatmg
a Component With additional subscriptm,
k Maximum (peak) Value of
g Akernating Component
-
Direct-current Value
E resistances, impedances, admittances, etc., inherent in the
B With additional subscript M ,
C Instantaneous Maximum (Peak)
J Total Value Total Value
A
K With additional subscript (AV)
G Direct-current Value m t h
Alternating Component
1.2.7 Examples of application of basic symbols chart.
emitter direct-current (no alternating coxn-
ponent)
root-mean-square value of alternating com-
ponent of emitter current
instantaneous value of alternating compo-
ent of emitter current
instantaneous total value of emitter current
average of emitter current with alternating
component
maximum (peak) value of the alternating
component of emitter current
maximum total (peak) value of the emitter
current
1.3 The Subscript Sequence Conforms tothe Mathematical
Concention for Writing Determinants from a Set of Funda-
mental Kirchhofs Equations
1.3.1 The first subscript designates the terminal at
which the current is measured, orwhere the terminal
potential is measured with respect to the reference ter-
minal, or circuit node, designated by the second subscript.
(Conventional current flow intothe terminal from the
external circuit is positive.) When the reference terminal
or circuit node is understood, the second subscript may
be omitted where its use is not required to preserve the
meaning of the symbol.
1.3.2 Supply voltage may be indicated by repeating the
terminal subscript. The reference terminal may then be
designated by the third subscript.
Examples: V E X , Vcc, VBB, VEEB, VCCB, VBBC,VKE
1.3.3 In devices having more than one terminal-of the
393
same type, the terminal subscripts are modified by adding
a number following the subscript and on the same line.
Example: VBI-Bz
In multiple-unit devices, the terminal subscripts are
modified by a number preceding the subscript.
Example: V 1 B - 2 ,
1.3.4 When necessary t o distinguish betweencompo-
nents of current or voltage, the symbols may be used as
shown in Fig. 1. The illustration shows a case where a
small alternating component is developed in the collector
circuit of a transistor.
2. ELECTRICAL
PARAMETERS
2.1 Parameter Xymbols
2.1.1Value of four-pole matrix parameters, or other
device, may be represented by the lower-case symbol with
the proper subscripts.
Examples: h,,,, Z a b , Y Z l b , ~ I I B hz,,
,
2.1.2 The four-pole matrix parameters of external cir-
cuits and of circuits in which the device forms only a part
shall be represented by upper-case symbols with appro-
priate subscripts.
Examples: H,,! Z,,, Yzl, Y,,
2.2 Subscript for Parameter Xymbols
2.2.1 Static’ values of parameters are indicated by the
upper-case subscript.
Examples: h,,,, zZ1B,yz2c
2.2.2 Small-signal values of parameters are indicated by
the lower-case subscript.
Examples: h,,,,ZZlb) yZzc
2.2.3 The first subscript or subscript pair, in matrix
notation, identifies the element of the four-pole matrix.
11 or i = input
22 or o = output
21 or f = forward transfer
12 or r = reverse transfer
Examples: V , = h1J, 3- h,,V, Vi = hiIi $- h,V,
I2 hzJl 3- h2zVz Io h,Ii +hoFo
Note 1) Voltage and current symbols in matrix nota-
tions are designated with a single-digit sub-
script 1 = input and subscript 2 = output.
Note 2 ) The quantities and parameters in these equa-
tions may be complex.
2.2.4 The subscript following the numeric pair identifies
the circuit configuration, When the common terminal is
understood, it may be omitted.
1 The static value is the slope of the line from the origin t o the
operatingpoint on the appropriatecharacteristiccurve, i.e., the
quotient of the appropriate electrical quantities a t t.he operating
point.
394
e = emitter terminal, common Note: This is the frequency a t which the modulus of
b = base terminal, common hzleis extrapolated t o unitmy.
C ” collector terminal, common
h,lB, h,,,, h,,,, h,,, hFE,hFc-The static value o€ the
j = general terminal, common
short-circuit forward current transfer ratio.
a = mode terminal, common
k = cathode terminal, common Note: Use of the symbols a g g , L Y F C , a F E is not recom-
mended.
g = gate terminal, common
Examples: (common-base transistor) hz1b, h,,,, h,,,, hfbrhr,, h,,--The small-signal short-cir-
cuit forward current transfer ratio.
I
1 = Yllbvlb + YlZbvZb ri = Yibvib + Yrbvob
Note: Use of the symbols afb1mfc, CYfe is not recom-
I 2 = YZlbVlb + YZZbVZb I, = YfbVib + YobVob mended.
2.2.5 The subscript “0” or “s” following the subscript h,lB, h,,,, h,,,,hIB, h,,, h,,-The static value of the
identifying circuit configuration for a two-port parameter ,&ort-circuit input resistance.
identifies the termination of the port opposite from the h I l bh,,,,
, h,,,, hib, hi,, hi,-The small-signal value of
one to which the parameter is referred: the short-circuit input impedance.
o = opposite port open-circuited hzzB,hZzE, h,,,, hoB,ho,, hoc-The static value of the
s = opposite port short-circuited. open-circuit output conductance.
This subscript should be upper case if the other sub- hZzb,h,,,,h,,,, hob,hoe,h,,-The small-signal value of
scripts arc upper case and should be lower case if the the open-circuit output admittance.
other subscripts are lower case. him, hym,hl,,,hRB,hRE,hR,-The Static vahe Of the
ExampIe: Cllbs, C,,, open-circuit reverse voltage t r a d e r ratio.
hlzb, h,,,, h,,,, hrb7
h,,, h,,-The small-signal value of the
3. LETTERSYMBOLS IN ALPHABETICAL ORDER open-circuit reverse voltage transfer ratio.
The following list has been compiled according to the Re(hllb), Re(hZlh),Re(h2zb)-Real part of the small-
conventions set forth in Sections 1 and 2 of this Standard. signal value of the parameter within the parenthesis.
111many of the symbols that follow onlythe direct-current 1m(hllb),Im(hzlb), Irn(h,,,)-Imaginary part of the
versions are listed, e.g., I,,,. Other symbols are easily small-signal value of the parameter within the parenthesis.
generated by application of the rules of Sections 1 and 2. IF^, IRo--The current through the collector junction in
CII,,Cllbs) cllGs)ClleslGibs, Ciea,Ci,,-The capacitance a PNPN-type switch when the switch is in the forward
measured across the input terminals with the output ter- (reverse) blocking state and the gate terminal, if any, is
minals short-circuited to alternating current. open-circuited.
Note: The use of the upper-case symbol is an exception IAGO, IGAO, IGKO, ICBO, IKGO,
ICBO,IEBO, I E c O , IBEO,
to the rules set forth in Section 2.1.1. IBCo-The current into the terminal indicated by the first
CZZ,,C2Zbo,C2zoo, Co,,,-The capacitance subscript when it is biased in the reverse direction with
C z z e o , Gobo, Coco,
measured across the outputterminals with the inputopen- respect to the reference terminal and the other terminal is
circuited to alternating current. open-circuited.
I F s, lR s-The current through the collector junction in
Note: The use of the upper-case symbol is an exception
to the ruIes set forth in Section 2.1.1. a PNPN-type switch when it is in the forward (reverse)
blocking state and the gate terminal is short-circuited t o
f h Z l b ) fhZle, fhalo-The lowest frequency at which the
the terminal of the adjacent region.
magnitude of the parameter indicated by the subscript
is 0.707 of its low-frequency value. I A G S, I G K S G , IKKG $9 rGA SG, ICB
S J I C E ST I E B S) I E C S7 I B I S SI
I,, s-The current into the terminal indicated by the first
Note: The use of the symbol f a is not recommended. subscript when it is biased in the reverse direction with
fmaa-The maximum frequency of oscillation of the respect to thereference terminal and the other terminal is
device. short-circuited t o the terminal indicated by the subscript
fl-The frequency at which the modulus of the common- following the subscript S.
emitter small-signal short-circuit forward current transfer Note: When the last subscript is omitted, the other ter-
ratio, Ihzl,(,has decreased to unity. minal is short-circuited t o the reference terminal.
fT-The product of the modulus of the common-emitter I,,, I,,-The current through the collector junction in
small-signal short-circuit forward current transfer ratio, a PNPN-type switch when the switch is in the forward
Ihzlel,multiplied by the frequency of measurement when (reverse) blocking state and the gate terminal is returned
this latteris sufficiently high so that themodulus of hsl, is to the terminal of the adjacent region through a stated
decreasingwith a slope approximately 6 decibels per octave. impedance and/or bias voltage.
1964 Devices
Symbols for Semiconductor 395
Note: When the return is through a resistance, the sub- I(BR)AGX, I(BR)GKXG, I(BR)KGx) I(BR)GAXG,
I(BR)CBX,
script “X” should bereplaced by the subscript ICBR)CEX, I(BR)EBx, I(BR)ECX, I(BR)BEX,
ImwBcx-The
“R.”When the return is through a stated bias current into the terminal indicated by the first subscript
voltage, the subscript “X” should be replaced by when it is biased at the breakdown voltage with respect
the subscript “V.” t o the reference terminal and the other terminal is returned
t o the terminal indicated by the subscript following the
I,,,, I G K X G , IKGX, , IEBX,
IGAXG,I c E xICBX, IECX, IBEX,
subscript “X” through a stated impedance and/or bias
IBCx-The current into the terminal indicated by the first
voltage.
subscript when it is biased in the reverse direction with
respect t o the reference terminal and the other terminal is Note: When the last subscript is omitted, the other ter-
returned t o the terminal indicated by the subscript follow- minal is returned t o the reference terminal. When
ing the subscript “X” through a stated impedance and/or the return is through a resistance, the subscript
bias voltage. “X” shouldbereplaced by the subscript “R.”
Note: When the last subscript is omitted, the other ter- When the return is through a stated bias voltage,
minal is returned to the,referenceterminal. When the subscript “X” should be replaced by the sub-
the return is through a resistance, the subscript script “V.”
“X” shouldbereplaced by the subscript “R.” IF-The forward current of a diode or the current
When the return is through a statedbias voltage, through the collector junction of a PNPN-type switch
the subscript “X” should be replaced by the sub- when the switch is in the ON state.
script “V.”
Note: If necessary to specify terminal currentsina
I(,,,-The currentthrougha diode at breakdown PNPN-type switch when the switch is in the ON
voltage. state, the symbols I,,, IxF shall be used.
I ( B R ) F I(BR)RO-The
O, currentthrough theco~~ector IGF-The forward gate current in a PNPN-typeswitch.
junction in a PNPN-type switch at forward breakover
(reverse breakdown) voltage when the gate terminal, if IGQ-The gate turn-off current in a PNPN-type switch.
any, is open-circuited. IGR-The reverse gate current in a PNPN-type switch.
I(BR)AGO, I ( B R ) GI A
( BoR
, )GKo, I(BR)KGo, I(BR)CBO,
IGT-The gate trigger current in a PNPN-type switch.
I(BR)CEO,
I(BR)EBo, I(BR)ECO,
I(BR)BEO,
I(BR)Bco-ThC
current into the terminal indicated by the first subscript I=-The holding current in a PNPN-type switch.
when it is biased at the breakdown (breakover) voltage
with respect t o the reference terminal and the other Note: If necessary t o state gate conditions, the appro-
terminal is open-circuited. priate additional subscript shall be used.

I(,,),s, I(,,),s-The current through the collector IR-ReVerSe current of a diode.

junction in a PNPN type switch at forward breakover M-The multiplication factor which is equal to theratio
(reverse breakdown) voltage when the gate terminal is of the total current through a reverse biased junction to
short-circuited t o the terminal of the adjacent region. the minority carrier current arriving at the junction.
I(BR)AGS, I(BR)GKSG, I(BR)KGs, I(BR)GASG, I(BR)CB s,
rCEsatr r B E s s t , rCBsat, rAGsst, r A K s a t , TKGsst-The saturation
I(BR)CE S, J ( B R ) E B s, I ( B R ) E C S , I ( B R ) B E s, I ( B R ) B C ,-The
resistance is the resistance between the terminal indicated
current into the terminal indicated by the first subscript
by the first subscript and the reference terminal for the
when it is biased at the breakdown voltage with respect saturation conditions stated.
to the reference terminal and the other terminal is short-
circuited t o the terminal indicated by the subscript follow- TA-hnbient temperature
ing the subscript s. Tc-Case temperature
Note: When the last subscript is omitted, the other ter- T J-Junction temperature
minal is short-circuited to the reference terminal.
&-The delay time is the time interval between the ap-
I { B R ) F x , I(BR),x-The current through the collector
plication of an input pulse and the time when the resulting
junction in a PNPN-type switch at forward breakover
minority carrier generated output pulse attains 10 per cent
(reverse breakdown) voltage when the gate terminal is
of its maximum amplitude.
returned to the terminal of the adjacent region through
a stated impedance and/or bias voltage. tf-The fall time, which is the time interval (following
the storage time) during which the output pulse decays to
Note: When the return is through a resistance, the sub-
10 per cent of the constant value that existed during the
script “X” shouldbereplaced by the subscript
storage interval.
“R.”When the return is through a stated bias
voltage, the subscript “X” should be replaced by tf,-The forward recovery time of a semiconductor
the subscript “V.” device.
396 IEEE TRANSACTIONS ON ELECTRON DEVICES August
t,-The rise time, which is the time interval during respect to the reference terminal and the other terminal is
which the output pulse increases from 10 per cent to 90 short-circuited t o the terminal indicated by the subscript
per cent of its maximum amplitude. following the subscript S.
&,-The reverserecovery time of a semiconductor Note 1 ) When the last subscript is omitted, the other
device. terminal is short-circuited t o the reference ter-
t,-The storage time, which is the time interval between minal.
the application of a turnoffpulse and the time when Note 2 ) The abbreviation BV is in common use for this
the resulting output pulse decays to 90 per cent of its quantity.
amplitude.
V{BR)FX, V(BR)Rx-The forward breakover (reverse
VFo, VRo-The voltage between the anode and cathode breakdown) voltage in a PNPN-type switch between the
terminals of a PNPN-type switch for a given current anode and cathode terminals when the gate terminal is
through the collector junction when the switch is in the returned to the terminal of the adjacent region through
forward (reverse)blocking state and the gate terminal, a stated impedance and/or bias voltage.
if any, is open-circuited.
Note: When the return is through a resistance, the sub-
VF S, VR,-The voltage between the anode and cathode script “X” shouldbereplaced by the subscript
terminals of aPNPN-type switch fora given current “R.” When the return is through a stated bias
through the collector junction when the switch is in the voltage, the subscript “X” should be replaced by
forward (reverse) blocking state and the gate terminal is the subscript “V.”
short-circuited to the terminal of the adjacent region.
V(BR)AGX,~ ( B R ) G K x G , ~ ( B R I K G X , ~ [ B R I G A X G ,V(BR)CBX,
VFX, p-Rx-The voltage between the anode and cathode V(BR)CEX, V c B R I E B X , V ( B R ) E C X , V(BRIBEX7 V,BR,BCx-The
terminals of aPNPN-type switch for a given current breakdown (breakover) voltage between the terminals in-
through the collector junction when the switch is in the dicated by the subscripts when the terminal indicated by
forward (reverse) blocking state and the gate terminal is the first subscript is biased in the reverse direction with
returned to the terminal of the adjacent region through a respect t o the reference terminal and the other terminal is
stated impedance and/or bias voltage. returned t o the terminal indicated by the subscript follow-
Note: When the return is through a resistance, the sub- ing the subscript “X” through a stated impedance and/or
script “X” shouldbereplaced by the subscript bias voltage.
“R.” When the return is through a stated bias Note I) When the last subscript is omitted, the other
voltage, the subscript “X” should be replaced by terminal is returned t o the reference terminal.
the subscript “V.”
Note 2) The abbreviation BV is in common use for this
V(BR)-The breakdown voltage of a diode. quantity.
V<BR)FO, V(BR)RO-The forward breakover (reverse Note 3) When the return is through a resistance, the
breakdown) voltage in a PNPN-type switch between the subscript “X” should be replaced by the sub-
anode and cathode terminals when the gate terminal, if script “R.” When the return is through a stated
any, is open-circuited. bias voltage, the subscript “X” should be re-
V ~ B R ) A GVOc B~R ) G A O , V(BR)GKO, V(BR)KGO, V(BR)CBO,
placed by the subscript “V.”
V<BR)CEO,
V(BR)EBO,
~ ( B R I E G O , V[BR)BEO,
V(BR)BCo-The V C B ( f I ) , V C E ( f I ) , v E B ( f i ) , VEC(fi),v B E ( f l ) , vBC(fl)-The
breakdown (breakover) voltage between the terminals in- direct-current open-circuit voltage (floating potential) be-
dicated by the subscripts when the terminal indicated by tween the terminal indicated by the first subscript and the
the first subscript is biased in the reverse direction with reference terminal when the other terminal is biased in the
respect to the reference terminal and the other terminal reverse direction with respect to the reference terminal.
is open-circuited.
VGESat-The direct-current voltage between the collec-
Note: The abbreviation BV is in common use for this tor and the emitter terminals for stated saturation con-
quantity. ditions.
V ( B R ) F s, V(BR)Rs-The forward breakover (reverse V,-Forward voltage of a diode or the anode-to-cathode
breakdown) voltage in a PNPN-type switch between the voltage of a PNPN-type switch when the switch is in the
anode and cathode terminals when the gate terminal is ON state.
short-circuited to the terminal of the adjacent region. VGF-The forward gate voltage in a PNPN-type switch.
V(BR)AGS) V C B W G K S G , V[BR)KGS,V ( B R ) G A ~ ~G( B, R ) C B
5, VGR-The reverse gate voltage in a PNPN-type switch.
V ( B R ) E B S , V ~ B R ) E C S , V(BR)BE
~ ( B R ) C S,
E S, V ( B R ) B C ,-The VGT-The gate trigger voltage in a PNPN-type switch.
breakdown (breakover) voltage between the terminals in-
dicated by the subscripts when the terminal indicated by VGQ-The gate turn-off voltage in a PNPN-type switch.
the first subscript is biased in the reverse direction with V , -Reverse voltage of a diode.
I964 for Semiconductor Devices 397
V(RT)-The reach-through voltage (sometimes referred AIEE Rectifier Device Working Group
t o as “punch-through” voltage) is that value of reverse
voltage at which the space charge region of the collector- J. R. Thurell, Chairman
base junction extends to the space-charge region of the R. P. Lyon, Secretary
emitter-base junction. P. W. Clarke
A. L. DiVenuti
ACKNOWLEDGMENT L. H. Dixon
The Institute wishes to acknowledge its indebtedness Alfred Ertel
to those who have so freely given of their time and know- J. Gramels
ledge and have conducted experimental workonwhich J. Priest
many of the IEEE publications are based. F. S. Stein
This publication was prepared jointly by Task Group
28.4.12 of the Semiconductor Devices Subcommittee of IRE Symbols Committee
the IRE Solid-state Devices Committee, the IRESymbols
Committee, and the Rectifier Device Working Group of J. M. Carroll, Chairman
the Component Subcommittee of the AIEE Semiconductor C. A. Frieke, Vice-Chairman
Rectifiers Committee. H. L. Cook, Secretary
IRE Task Group 28.4.12 T. N. Anderson L. A. Meadows
J. M. Goldey, Chairman D. Dsusdow C. D. Mitchell
F. P. Burns, Secretary, 1959-61 H. J. Elschner R. V. Rice
W. T . Matzen, Secretary, 1961-63 W. J. Everts S. V. Soanes
R. S. Biesele D. M. Faller R. M. Stern
N. Holonyak, Jr. R. T. Haviland R. G. Stranix
F. S. Stein D. Howell H. R. Terhune
Howard Starke K. K. Kuller L. N. Warren