* BEGIN *

0.18 um Mixed-Mode and RFCMOS 1.8 V/3.3 V

Triple-Well Metal Metal Capacitor Process SPICE
Model

(Ver. 1.5_P. 1)
P-Sub, Mixed-Mode and RFCMOS Process

DSM NO. : G-05-MIXED_MODE/RFCMOS18-1.8V/3.3V-TRI_WELL/M

MC-SPICE
Total Pages : 10 (INCLUDING THIS COVER PAGE)
Approve Date : 2009/10/29

TECHNICAL INFORMATION CENTER

UNITED MICROELECTRONICS CORPORATION GROUP
No. 3 Li-Hsin Rd. 2, Science-Based Industrial Park, Hsin-Chu City, Taiwan, R.O.C.
Tel:+886-3-578-2258 Fax:+886-3-577-8271
ALL RIGHTS STRICTLY RESERVED ANY PORTION IN THIS DOCUMENT SHALL NOT BE
REPRODUCED COPIED OR TRANSFORMED TO ANY OTHER FORMS WITHOUT PERMISSION.
DSM NO: G-05-MIXED_MODE/RFCMOS18-1.8V/3.3V-TRI_WELL/MMC-SPICE
Ver:1.5 Phase:1 Approved Date: 10/29/2009

1. Contents Page
____________________________________________
1. Content 2
2. Revision History 3
3. Model Description 7
3.1 Model Description 7
3.2 N/PMOS Model 7
3.2.1 Description 7
3.3 Resistor Model 8
3.3.1 Description 8
3.4 BJT Model 8
3.4.1 Description 8
3.5 Diode Model 9
3.5.1 Description 9
3.6 MIM Model 9
4. Appendix 10

____________________________________________

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DSM NO: G-05-MIXED_MODE/RFCMOS18-1.8V/3.3V-TRI_WELL/MMC-SPICE
Ver:1.5 Phase:1 Approved Date: 10/29/2009

2. Revision History:
Ver. Phase Approved From To Remark
Date (Purpose)

0.1 10/06/2000 - Original release Original

1.1 0 03/16/2001 - Process Frozen

1.2 1 11/06/2002 (1). separate model card (1). modified and unified These models
format: model card format: are for 8C only.

G-05-MIXEDMODE/RFCMOS G-05-MIXED_MODE/RFCM
18-1.8V-SPICE OS18-1.8V/3.3V-TRIPLE_W Modified and
G-05-MIXEDMODE/RFCMOS ELL/MMC-SPICE-8C unified model
18-1.8V-TRIW-SPICE card format and
G-05-MIXEDMODE/RFCMOS device model
18-3.3V-SPICE name .
G-05-MIXEDMODE/RFCMOS
18-3.3V-TRIW-SPICE Triple well
G-05-MIXEDMODE/RFCMOS 1.8V/3.3V
18-1.8V-ZEROVT-SPICE regular Vt
NMOS device
models are
replaced by twin
(2). Delete (2). New device model name well 1.8V/3.3V
1.8V/3.3V NMOS/TW 1.8V N/PMOS regular Vt
1.8V LOW VT N/P MOS N_BPW_18_MM NMOS device
3.3V LOW VT N/PMOS 3.3V N/PMOS models.
1.8V/3.3V ZERO VT NMOS N_BPW_33_MM
salicide N+/P-well diode
(2). Change device model DION_MM Revised some
name salicide P+/N-well diode typo for diode
1.8V N/PMOS DIOP_MM model.
N salicide N_well/P-sub diode
3.3V N/PMOS DIONW_MM Add
N temperature
salicide N+/P-well diode (3).Replace triple well parameters for
DN 1.8V/3.3 V regular vt NMOS diode model.
salicide P+/N-well diode device model by twin well
DP 1.8V/3.3V regular vt NMOS Add resistor
salicide N_well/P-sub diode device model model.
DNW
(3). No resistor model (4). Add resistor model

(4).Revise Diode Model

parameter value typo:

Salicide N+/P-well diode:

IBV=125
TLEV=0
XTI=3.3

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DSM NO: G-05-MIXED_MODE/RFCMOS18-1.8V/3.3V-TRI_WELL/MMC-SPICE
Ver:1.5 Phase:1 Approved Date: 10/29/2009

Ver. Phase Approved From To Remark

Date (Purpose)

1.2 1 11/06/2002 Salicide P+/N-well diode: (5).New Diode Model

IBV=125 parameter value :
TLEV=0
Salicide N+/P-well diode:
Salicide N_well/P-sub diode: IBV=1E-03
IBV=59 TLEV=1
TLEV=0 TLEVC=1
XTI=3.0

(5)Diode Models have no Salicide P+/N-well diode:

temperature parameters. IBV=1E-03
TLEV=1
TLEVC=1

Salicide N_well/P-sub
diode:
IBV=1E-03
TLEV=1
TLEVC=1

(6). Add temperature

parameters for Diode Model
:
Salicide N+/P-well diode:
CTP = 0.000914
TPHP= 0.000924
CTA = 0.000919
TPB= 0.00158

Salicide P+/N-well diode:

CTA = 0.001
CTP = 7.53E-04
TPB = 1.55E-03
TPHP = 1.24E-03

1.3 1 04/30/2003
(1)DLC=4.00E-8,LLC=-6.64E- (1)Revised DLC=2.9E-8
15 for 1.8V regular Vt NMOS ,LLC=-2.14E-15 for 1.8V
model regular Vt NMOS model Add ADS
simulator model
(2)No ADS simulator model (2)Add ADS sumulator format
format model format
Typo fixed
(3)No TRM1 parameter in (3)Add TRM1=0.0035 in
both PNP_V50X50_MM and PNP_V50X50_MM BJT
PNP_V100X100_MM BJT model and TRM1=0.004 in
model PNP_V100X100_MM BJT
model
(4)Typo CTA=1.0E-3,
CTP=7.53E-4, PTA=1.55E-3 , (4)Revise CTA=9.19E-4,
PTP=1.24E-3 in N+/PWELL CTP=9.14E-4,PTA=1.58E-3
SPECTRE Diode Model , PTP=9.24E-4 inN+/PWE
LL SPECTRE Diode Model

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DSM NO: G-05-MIXED_MODE/RFCMOS18-1.8V/3.3V-TRI_WELL/MMC-SPICE
Ver:1.5 Phase:1 Approved Date: 10/29/2009

Ver. Phase Approved From To Remark

Date (Purpose)
1.3 2 03/26/2004 1. Separate model card 1. Modified and unified The ADS model
format:G-05-MIXED_MODE/ model card change only has
RFCMOS18-3.3V-TRI_WELL/ format:G-05-MIXED_MODE a little effect on
NOISE-SPICE /RFCMOS18-1.8V/3.3V-TRI AC side, but it
G-05-MIXED_MODE/RFCMO _WELL/MMC-SPICE-8C won’t effect DC
S18-1.8V-TRI_WELL/NOISE- side.
SPICE
G-05-MIXED_MODE/RFCMO
S18-1.8V/3.3V-TRI_WELL/M
MC-SPICE-8C
2.Revised HR poly resistor HSPICE and
equation to align with EDR SPECTRE didn't
have any change
3.Use Star-Hspice version in device model.
2003.3 to generate electrical
performance table.

4.For the ADS model:

(1)Removed MJSWG =0.33,
ADS sets MJSWG to its
default value after
conversion from HSPICE,
but HSPICE defaults
MJSWG to MJSW if it was
not specified.
(2) Changed PBSWG into
PBSW, it is an bug of ADS
conversion.
(3) Removed the default
flick noise parameters.
5.Change typo parameter
name from
xx_n_33_bpw_mm and
xx_N_BPW_33_MM to
xx_n_bpw_33_mm in
SPECTRE model card for
3.3V NMOS.
1.4 1 11/02/2005 1. Add BJT layout database
2. Add MIMCAP device

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DSM NO: G-05-MIXED_MODE/RFCMOS18-1.8V/3.3V-TRI_WELL/MMC-SPICE
Ver:1.5 Phase:1 Approved Date: 10/29/2009

Ver. Phase Approved From To Remark

Date (Purpose)
1.4 2 05/30/2006
.subckt rnnpo_mm n2 n1 pw .subckt rnnpo_mm n2 n1 pw
wr=1 lr=1
.param vcr1=-0.00376e-6
vcr2=-0.08474e-12 tc1=-1.6e-4 .param vcr1=-0.00376e-6
tc2=4.18e-7 temp= 'temper' vcr2=-0.08474e-12 tc1=-1.6e-4
wr=1 lr=1 tc2=4.18e-7 temp= 'temper'
1.5 1 10/29/2009 G-05-MIXED_MODE/RFCMOS1 G-05-MIXED_MODE/RFCMOS
8-1.8V/3.3V-TRI_WELL/MMC-SP 18-1.8V/3.3V-TRI_WELL/MMC-
ICE-8C SPICE
MM180_RES_V133.lib.net: MM180_RES_V141.lib.net:
SDD:r1 n2 n1 n1 n2 I[2,0]=0 SDD:r1 n2 n1 n1 n2 I[2,0]=0
I[1,0]=(_v1)/(((2*rend/(wr+dw))+(r I[1,0]=(_v1)/(((2*rend/(wr+dw))+
s*lr/(wr+dw)))*(1.0+vcr1*abs(_v2/ (rs*lr/(wr+dw)))*(1.0+vcr1*abs(_
lr)+vcr2*abs(_v1/lr)*abs(_v1/lr))*t v2/lr)+vcr2*abs(_v1/lr)*abs(_v1/
coef) lr))*tcoef) \
SDD:r1 n2 n1 n1 n2 I[2,0]=0 SDD:r1 n2 n1 n1 n2 I[2,0]=0
I[1,0]=(_v1)/(((2*rend/(wr+dw))+(r I[1,0]=(_v1)/(((2*rend/(wr+dw))+
s*(lr-0.4e-6)/(wr+dw)))*(1.0+vcr1* (rs*(lr-0.4e-6)/(wr+dw)))*(1.0+v
abs(_v2/ cr1*abs(_v2/(lr-0.4e-6))+vcr2*a
(lr-0.4e-6))+vcr2*abs(_v1/(lr-0.4e bs(_v1/(lr-0.4e-6))*abs(_v1/(lr-0
-6))* abs(_v1/(lr-0.4e-6)))*tcoef) .4e-6)))*tcoef) \

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 DSM NO: G-05-MIXED_MODE/RFCMOS18-1.8V/3.3V-TRI_WELL/MMC-SPICE
Ver:1.5 Phase:1 Approved Date: 10/29/2009

3. Model Description
3.1 Model Description
3.1.1 Simulators : HSPICE Version 2003.3 SP1 , SPECTRE Version 4.4.6 and ELDO Version 5.6 and ADS Version
2002C.200

3.1.2 UMC Model Version : version 1.5 phase 1

3.1.3 Application : 0.18um MIXED_MODE/RFCMOS 1.8V/3.3V Triple-Well Process

3.1.4 Temperature Range : -55C ~ 125C

3.2 N/PMOS Model

3.2.1 Description

MODEL : HSPICE LEVEL=49, ELDO LEVEL 53 and Cadence SPECTRE BSIM3V3.2

Please refer to N/PMOS model in MM180_TRIPLEWELL_V141_D121203.zip.

A. Linking-all file name :

MM180_HSPICE_MAIN_V142.lib
Please use .LIB '/home/users/UMC/MM180_HSPICE_MAIN_V142.lib' TT statement
in the SPICE netlists to include all the 0.18um mixed mode model, except resistor model,
which are shown there.If you want to use resistor model, please include it individually.

B. 1.8V/3.3V BPW Regular Vt NMOS Model:

File Name :
a. 1.8V Device :
MM180_REG18BPW_V123.lib
MM180_REG18BPW_V123.mdl
MM180_REG18BPW_V123.pdf

b. 3.3V Device :
MM180_REG33BPW_V123.lib
MM180_REG33BPW_V123.mdl
MM180_REG33BPW_V123.pdf

Usage :

Please use .LIB statement in the SPICE netlists.

e.g. .LIB '/home/users/UMC/MM180_REG33BPW_V123.lib'' TT

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 DSM NO: G-05-MIXED_MODE/RFCMOS18-1.8V/3.3V-TRI_WELL/MMC-SPICE
Ver:1.5 Phase:1 Approved Date: 10/29/2009

3.3 Resistor Model

3.3.1 Description

File Name :
MM180_RES_V141 .lib
MM180_RES_V141 .mdl
MM180_RES_V141 .pdf

Usage :

Please use .LIB statement in the SPICE netlists.

e.g. .LIB '/home/users/UMC/MM180_RES_V141 .lib'' res_typ

Define subcircuit condition by 'Xxx' statement;

e.g. X1 nd ns rsnd_mm wr=20E-6 lr=100E-6

3.4 BJT Model

3.4.1 Description

File Name :

MM180_BJT_V112.mdl
MM180_BJT_V112.pdf

Usage :

Please use .include statement in the SPICE netlists.

e.g. .include '/home/users/UMC/MM180_BJT_V112.mdl'

Layout issue :
Users should notice that the model is non-scalable,the model
doesn't guarantee the behavior if using other sizes.

Layout GDSII File name

0.18um Mixed-Mode BJT 5umX5um cell layout:018mm_5x5_080405.db

0.18um Mixed-Mode BJT 10umX10um cell layout:018mm_10x10_080405.db
0.18um Mixed-Mode BJT pattern layout table:umc.tab

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 DSM NO: G-05-MIXED_MODE/RFCMOS18-1.8V/3.3V-TRI_WELL/MMC-SPICE
Ver:1.5 Phase:1 Approved Date: 10/29/2009

3.5 Diode Model

3.5.1 Description

File Name :

MM180_DIODE_V113.mdl
MM180_DIODE_V113.pdf

Usage :

Please use .include statement in the SPICE netlists.

e.g. .include '/home/users/UMC/MM180_DIODE_V113.mdl'

3.6 MIM Model

3.6.1Description
File Name :

MM180_ MIMCAP _V101.mdl

MM180_MIMCAP_V101.lib
MM180_MIMCAP_V101.pdf
Usage :

Please use .include statement in the SPICE netlists.

e.g. .LIB '/home/users/UMC/MM180_MIMCAP_V101.lib ' mimcaps_typ

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 DSM NO: G-05-MIXED_MODE/RFCMOS18-1.8V/3.3V-TRI_WELL/MMC-SPICE
Ver:1.5 Phase:1 Approved Date: 10/29/2009

4. Appendix
4.1 Warning message VS Ignore highlight
Model name HSPICE SPECTRE ELDO ADS Ignore
Highlight
MIM model mimcaps_mm -- -- -- --
Resistor model rnnpo_mm -- -- -- --
rnppo_mm -- -- -- --
rnhr1000_mm -- -- -- --
Diode model DION_MM -- -- -- --
DIOP_MM -- -- -- --
DIONW_MM -- -- -- --
MOS model N_BPW_18_MM device Warning.xckt.m -- Please ignore
geometries will 1: `Pdiblc2' = the warning in
not be checked -15.6508e-03 is the hspice
against the negative. simulation
limits set by xckt.m1: `Cdscd' t’s necessary
lmin, lmax, = -500e-06 is to get good fit,
wmin and negative. but would
wmax. To cause a
enable this harmless
check, add a warning in
period(.) SPECTRE.
to the model
name(i.e.
enable model
selector).
large.
N_ BPW_33_MM -- -- --
BJT model pnp_v50x50_mm -- Warning -- -- Please ignore
pnp_v100x100_mm xckt.q1: the warning in
Parasitic theSPECTRE
resistor `re' has simulation
been deleted
because its
value of 1
mOhm ( R /
(Area *
MFactor) ) was
smaller than
`minr'.

* END *

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