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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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 FAN7387 — Self-Oscillated, High-Voltage Gate Driver
March 2014

FAN7387
Self-Oscillated, High-Voltage Gate Driver

Features
 Internal Clock Using RCT
 External Sync Function Using RCT
 Dead Time Control Using Resistor
 Shut Down (Disable Mode)
 Internal Shunt Regulator
 UVLO Function, High and Low Side
Applications
Description
The FAN7387 is a simple control IC for common half-
bridge inverters, SMPS, and ballast for fluorescent and
HID lamps. The FAN7387 has an oscillating circuit using
an external resistor and capacitor.
The frequency variation is very stable across a wide
temperature range. The FAN7387 has an external pin
for dead-time control and shutdown. Using this resistor,
the designer can choose the optimum dead time to
reduce power loss on switching devices, such as
transistors and MOSFETs.

 Half-Bridge Inverter
 SMPS 8-DIP 8-SOP
 Ballast Solution for High-Intensity Discharge
(HID) Lamp
 Ballast for Fluorescent Lamp

Ordering Information
Part Number Package Operating Temperature Packing Method
(1)
FAN7387MX 8-SOP -40 to +125°C Tape & Reel
Note:
1. These device passed wave soldering test by JESD22A-111.

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN7387 • 1.0.4
 FAN7387 — Self-Oscillated, High-Voltage Gate Driver
Typical Applications Diagrams

C1 VDC
D1
VDD C2

CT D2
1 RCT VB 8

FAN7387
R1 C3
RT1 RDT 2 VDD HO 7 M1
C5
C4
3 DT/ SD VS 6
R2 D3
Q1 Q2 4 GND LO 5 M2

Cb* RT2 C6
Frequency
Control Shutdown

GND
* Note: This capacitor, Cb, is for system stability and must use at least 470nF. FAN7387 Rev1.0
Figure 1. Typical Application Circuit for SMPS (Self Oscillation Method)

Figure 2. Typical Application Circuit for SMPS by Using External Signal

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN7387 • 1.0.4 2
 FAN7387 — Self-Oscillated, High-Voltage Gate Driver
Typical Application Diagrams (Continued)

FAN7387
FAN7387

Figure 3. Typical Application Circuit for Full-Bridge Converter

Figure 4. Typical Application Circuit for Fluorescent Lamp Ballast

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN7387 • 1.0.4 3
 FAN7387 — Self-Oscillated, High-Voltage Gate Driver
Internal Block Diagram

Shunt
15V

SHORT-PULSE
GENERATOR
Generation

First Logic
Dead-time

Low-Side
Figure 5. Functional Block Diagram

Pin Configuration

Figure 6. Pin Configurations (Top View)

Pin Definitions
Pin # Name Description
1 RCT Oscillator frequency set resistor and capacitor.
2 VDD Supply Voltage.
3 DT/SD Dead-time control and shutdown (active LOW).
4 GND Signal Ground.
5 LO Low-Side Output.
6 VS High-Side floating supply return.
7 HO High-Side output.
8 VB High-Side floating supply.

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN7387 • 1.0.4 4
 FAN7387 — Self-Oscillated, High-Voltage Gate Driver
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In
addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified.

Symbol Parameter Min. Typ. Max. Unit

VB High-Side Floating Supply Voltage -0.3 625.0 V
VS High-Side Offset Voltage -0.3 600.0 V
VRCT RCT Pins Input Voltage VCL V
ICL Clamping current level(2) 25 mA
dVS/dt Allowable Offset Voltage Slew Rate 50 V/ns
TA Operating Temperature Range -40 +125 °C
TSTG Storage Temperature Range -65 +150 °C
PD Power Dissipation 0.625 W
JA Thermal Resistance (Junction-to-Air) 200 °C/W
Note:
2. Do not supply a low-impedance voltage source to the internal clamping Zener diode between the GND and the
VDD pin of this device.

Recommended Operating Ratings

The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.

Symbol Parameter Min. Max. Unit.

VB High-Side Floating Supply Voltage VS+11 VS+14 V
VS High-Side Offset Voltage 6-VDD 600 V
VDD Low-Side Supply Voltage 11 14 V
VHO High-Side (HO) Output Voltage GND VDD V
VLO Low-Side (LO) Output Voltage GND VDD V
VIH Logic “1” Input Voltage of RCT (3/4 VDD)+1 V
VIL Logic “0” Input Voltage of RCT (3/5 VDD)-1 V
RT Timing Resistor Value of RCT 2 k
CT Timing Capacitor Value of RCT 100 pF
TA Ambient Temperature -40 +125 °C

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN7387 • 1.0.4 5
 FAN7387 — Self-Oscillated, High-Voltage Gate Driver
Electrical Characteristics
VBIAS (VDD, VB -VS)=14.0 V, CL=1 nF, RT=50 kΩ and CT=330 pF and TA=25C, unless otherwise specified.

Symbol Parameter Conditions Min. Typ. Max. Unit

Low-Side Supply Characteristics (VDD)
VDDUV+ VDD Supply Under-Voltage Positive-Going Threshold VDD Increasing 9.50 11.00 12.50 V
VDDUV- VDD Supply Under-Voltage Negative-Going Threshold VDD Decreasing 7.5 9.0 10.5 V
VDDUVH VDD Supply Under-Voltage Lockout Hysteresis 2 V
VCL Supply Camping Voltage IDD=10 mA 14.8 15.4 V
IQDD Low-Side Quiescent Supply Current RDT=100 kΩ 220 500 µA
IST Startup Supply Current VDD=9 V 50 130 µA
ILK Offset Supply Leakage Current VB=VS=600 V 10 µA
IPDD Low-Side Dynamic Operating Supply Current 0.8 mA
High-Side Supply Characteristics (VB-VS)
VBSUV+ VBS Supply Under-Voltage Negative-Going Threshold VB-VS Increasing 7.7 9.2 10.7 V
VBSUV- VBS Supply Under-Voltage Negative-Going Threshold VB-VS Decreasing 7.1 8.6 10.1 V
VBSUVH VBS Supply Under-Voltage Lockout Hysteresis 0.6 V
IQBS High-Side Quiescent Supply Current 50 130 µA
IPBS High-Side Dynamic Operating Supply Current 400 800 µA

Oscillator Characteristics
RT=50 kΩ,
fosc1 Oscillation Frequency 1 18 20 22 kHz
CT=330 pF
fosc2 Oscillation Frequency 2 RT=1 kΩ, CT=1 nF 210 250 290 kHz
D Duty Cycle Running Mode 47.5 49.0 %
VRCT+ Upper Threshold Voltage of RCT Running Mode VDD V
VRCT- Lower Threshold Voltage of RCT Running Mode VDD /4 V
3/4
VIH Logic “1” Input Voltage of RCT Running Mode V
VDD
3/5
VIL Logic “0” Input Voltage of RCT Running Mode V
VDD
tD Dead-Time RDT=100 kΩ 500 600 700 ns
tDMIN Minimum Dead-Time VDT/SD=VDD 300 400 500 ns

Output Characteristics
IO+ Output High, Short-Circuit Pulse Current(3) PW≤10 µs 350 mA

IO- Output Low, Short-Circuit Pulse Current(3) PW≤10 µs 650 mA

Allowable Negative VS Pin voltage for Input Signal (VRCT)

VS -9.8 -7.0 V
Propagation to HO

Continued on the following page...

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN7387 • 1.0.4 6
 FAN7387 — Self-Oscillated, High-Voltage Gate Driver
Electrical Characteristics (Continued)
VBIAS (VDD, VB -VS)=14.0 V, CL=1 nF, RT=50 kΩ and CT=330 pF and TA=25C, unless otherwise specified.

Symbol Parameter Conditions Min. Typ. Max. Unit

Output Characteristics
VDD=VBS=14 V, VDT/SD=VDD,
tON Turn-On Propagation Time 550 ns
VRCT=4 V~VDD, fOSC=20 kHz
VDD=VBS=14 V, VDT/SD=VDD,
tOFF Turn-Off Propagation Time 160 ns
VRCT=4 V~VDD, fOSC=20 kHz
tR Turn-On Rising Time CL=1000 pF 50 120 ns
tF Turn-Off Falling Time CL=1000 pF 30 70 ns

Protection Characteristics
/SD+ Shutdown “1” Input Voltage 2.7 V
/SD- Shutdown “0” Input Voltage 1 V
ISD Shutdown Current VDT/SD=0 After Running Mode 250 µA
tSD Shutdown Propagation Delay 180 ns
Note:
3. These parameters, although guaranteed, is not 100% tested in production.

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN7387 • 1.0.4 7
 FAN7387 — Self-Oscillated, High-Voltage Gate Driver
Switching Definitions

RCT

FAN7387
10 F

10 F LO

DT

HO

Figure 7. Test Circuit for Self-Oscillation Method Figure 8. Basic Operating Waveforms of
Self-Oscillation

FAN7387
10 F

10 F

Figure 9. Shutdown Delay Definition Figure 10. Test Circuit for Forced-Oscillation Method
Using External Signal

Figure 11. Basic Operation Waveforms of Forced-oscillation Method Using External Signal

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN7387 • 1.0.4 8
 FAN7387 — Self-Oscillated, High-Voltage Gate Driver
Typical Performance Characteristics

200 12.5

12.0
150

VDDUV+ [V]
11.5
IST [A]

100 11.0

10.5
50
10.0

0 9.5
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [°C] Temperature [°C]

Figure 12. Startup Current vs. Temperature Figure 13. VDD UVLO+ vs. Temperature

10.5 10.0

9.6
10.0
9.2
9.5
VBSUV+ [V]
VDDUV- [V]

8.8
9.0
8.4

8.5 8.0

8.0 7.6

7.2
7.5
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [°C] Temperature [°C]

Figure 14. VDD UVLO- vs. Temperature Figure 15. VBS UVLO+ vs. Temperature

10.0 16.0

9.6
15.8
9.2
15.6
VBSUV- [V]

VCL [V]

8.8
15.4
8.4

8.0 15.2

7.6
15.0
7.2
14.8
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [°C] Temperature [°C]

Figure 16. VBS UVLO- vs. Temperature Figure 17. VCL vs. Temperature

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN7387 • 1.0.4 9
 FAN7387 — Self-Oscillated, High-Voltage Gate Driver
Typical Performance Characteristics (Continued)

2.5 500

2.0 400
IPDD [mA]

IQDD [A]
1.5 300

1.0 200

0.5
100

0.0
-40 -20 0 20 40 60 80 100 120 0
-40 -20 0 20 40 60 80 100 120
Temperature [°C]
Temperature [°C]

Figure 18. IPDD vs. Temperature Figure 19. IQDD vs. Temperature

500 3.0

2.5
400
2.0
VSD+ [V]
ISD [A]

300
1.5

200
1.0

100 0.5

0.0
0 -40 -20 0 20 40 60 80 100 120
-40 -20 0 20 40 60 80 100 120
Temperature [°C]
Temperature [°C]

Figure 20. ISD vs. Temperature Figure 21. VSD+ vs. Temperature

3.0 23

22

2.5
21
VSD- [V]

fOSC1[kHz]

2.0 20

19
1.5
18

1.0 17
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120

Temperature [°C] Temperature [°C]

Figure 22. VSD- vs. Temperature Figure 23. Operating Frequency 1 vs. Temperature

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN7387 • 1.0.4 10
 FAN7387 — Self-Oscillated, High-Voltage Gate Driver
Typical Performance Characteristics (Continued)

280
500

270 475

260 450
fOSC2[kHz]

tDMIN[ns]
425
250
400
240
375

230 350

220 325

300
210 -40 -20 0 20 40 60 80 100 120
-40 -20 0 20 40 60 80 100 120
Temperature [°C]
Temperature [°C]

Figure 24. Operating Frequency 2 vs. Temperature Figure 25. tDMIN vs. Temperature

50 52

Duty at High-Side Output [%]

40
51
tDMIN_mismatch[ns]

30
50

20
49

10

48

0
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature [°C] Temperature [°C]

Figure 26. Dead-Time Mismatch vs. Temperature Figure 27. High-Side Duty Ratio vs. Temperature

52
Duty at Low-Side Output [%]

51

50

49

48
-40 -20 0 20 40 60 80 100 120
Temperature [°C]

Figure 28. Low-Side Duty Ratio vs. Temperature Figure 29. Frequency vs. RT

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN7387 • 1.0.4 11
 FAN7387 — Self-Oscillated, High-Voltage Gate Driver
Functional Description
1. Under-Voltage Lockout (UVLO) Function where, t is the discharging time of the RCT voltage and
FAN7387 has a UVLO circuit for a low-side and high- tfix is constant value about 450 ns of IC.
side block. When VDD reaches to the VDDUV+, the UVLO 3. Programming Dead-Time Control / Shutdown
circuit is released and the FAN7387 operates normally.
At UVLO condition, the FAN7387 has a low supply A multi-function pin controls dead-time using an external
current of less than 130 µA. Once UVLO is released, resistor (RDT) and protects abnormal condition using an
FAN7387 operates normally until VDD goes below external switch. This pin should be connected to an
VDDUV-, the UVLO hysteresis. external capacitor to maintain stable operation.
FAN7387 also has a high-side gate driver. The supply If the voltage of DT/SD is decreased under 1 V by an
for the high-side driver is applied between VB and VS. To external switch, such as the TR or MOSFET, the
prevent malfunction at low supply voltage between VB FAN7387 enters shutdown mode. In this mode, the
and VS, FAN7387 provides an additional UVLO circuit. If FAN7387 doesn’t have any output signal.
VB-VS is under VBSUV+, the driver holds LOW state to
turn off the high-side switch. Once the voltage of VB-VS
is higher than VBSUVH, after VB-VS exceeds VBSUV-, the
operation of driver resumes.
2. Oscillator
The running frequency is determined by an external
timing resistor (RT) and timing capacitor (CT). The
charge time of capacitor CT from 1/4 VDD to VDD
determines the running frequency of LO and HO gate
driver output. Figure 30 shows connection configuration. Figure 32. External Shutdown Circuit
VDD
RCT
1 8 VB

CT
VDD
2 7 HO

DT/SD 3 6 VS

RT GND
4 5 LO

Figure 30. Typical Connection Method

Figure 31 shows the typical waveforms of RCT, LO, and
HO. From the circuit analysis, the discharging time of
RCT, t, is given by Equation 1:
Figure 33. Adjustable Dead Time
t (1)
VRCT  VDD  In( ) 4. Gate Driver Operation
Rt  Ct
Equation 1 enables calculation of discharging time, t, The FAN7387 has a two operating modes. One is the
from VDD to 1/4 VDD by substituting VRCT(t) with 1/4 VDD. self-oscillation mode by using external timing resistor
(RT) and external timing capacitor (CT) and the other is
t  1.38  Rt  Ct (2) the forced oscillation mode by external PWM signal
comes from U-com and the other devices.
The running frequency of IC is determined by 1/T and is
approximately given as: Figure 33 shows operation of the IC using an external
PWM circuit with additional resistors (R1 and R2) for
1 1 (3) internal limitation of the IC. The input signal range from
frunning  
T 2(t  Tfix ) an external circuit must be within 3/5 VDD and 3/4 VDD.
The external signal produces the HO and LO output and
HO signal is in-phase with the external input signal.

Figure 31. Typical Waveforms of RCT,LO and HO Figure 34. Gate Driver Using External PWM Signal

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN7387 • 1.0.4 12
 FAN7387 — Self-Oscillated, High-Voltage Gate Driver
Physical Dimensions

0.65
4.90±0.10 A
(0.635)
8 5
B

1.75
6.00±0.20 5.60
3.90±0.10

PIN ONE 1 4
INDICATOR
1.27
1.27
0.25 C B A LAND PATTERN RECOMMENDATION

SEE DETAIL A
0.175±0.75

0.22±0.30
1.75 MAX C

0.10
0.42±0.09 OPTION A - BEVEL EDGE

(0.86) x 45°
R0.10 GAGE PLANE
OPTION B - NO BEVEL EDGE
R0.10 0.36
NOTES: UNLESS OTHERWISE SPECIFIED
8°
0° A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AA.
SEATING PLANE B) ALL DIMENSIONS ARE IN MILLIMETERS.
0.65±0.25 C) DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS.
(1.04) D) LANDPATTERN STANDARD: SOIC127P600X175-8M.
DETAIL A E) DRAWING FILENAME: M08Arev15
SCALE: 2:1
F) FAIRCHILD SEMICONDUCTOR.

Figure 35. 8-Lead Small Outline Package (SOP)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/M0/M08A.pdf.

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN7387 • 1.0.4 13
 FAN7387 — Self-Oscillated, High-Voltage Gate Driver

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FAN7387 • 1.0.4 14
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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