are the majoritycarriersandthe holesare the minority In thiscasethe electrons holes. Becausethe tive-electronatomshavean extraelectronto "donate". carriers. - they are donoratoms. called Thepurpose (luping: Ptype 0f p-type istocreate dGPing of holes. anabundance In the caseofsilicona trivalentatom. suchas boron. is substituted into the crystallattice.The resulliSthatan electronis missingfrom oneofthe four possiblecovalentbonds.Thusthe atomcanacceptanelectron from thevalence bandtocompletethefourthbond.resulting of a hole.Suchdopants intheforthatlon Whena sufficiently arecalledacceptors. large number0i acceptorsare added the holes greatly outnumberthe excited electrons.Thus. the arethemalorlty while carrieis, aretheminority electrons inp-type carriers holes materIa s
3 16-Explainphysically asa rectiner.
howa p-njunctionfunctions [Model Question] Answer: Whena P-N junction diode is forward-biasedand the applied voltage is increasedfrom zero.hardly any current flows through the device in the beginning. It is so becausethe externalvoltage is being opposed by the internal barrier voltage VB whose value is 0.7 V for Silicon and 0.3 V for Ge. As soon as VB is neutralized, current through the diode increasesrapidly with increasing applied battery voltage. So, in forward bias condition, the P-N junction diode behaves like a closed switch. When a P-N junction diode is reversebiased, majority carriers are blocked and only a small. current (due to minority carriers)flows through the diode. It is of the order of nanoamperes (nA) for Si and microamperes(ttA) for Ge. For all practical purposes,this current is almost negligible. So.in Reversebias condition..the P-N junction diode behaveslike an open switch. So. theabovediscussionshows that the P-N junction functions as a rectifier.
3 17.Write short noteson the following:
a) Forward Voltage drop b) Peak inverse Voltage c) Maximum forward current d) Leakage current e) Junction Capacitance. [Model Question] Answer: 2) Forward voltage drop (Vf) Anyelectronicsdevice passingcurrent will develop a resultingvoltage acrossit and this diodecharacteristicIS of great importance, especially for power rectitIcation where power will be higher for a high forward voltage dr0p. Also RF diodes often need a small losses forwardvoltagedrop as signalsmay be small but still needto overcome it. Thevoltageacrossa PN junctiondiodearisesfor two reasons.The first of the natureof PN junctionand resultsfrom the turn-onvoltagementionedabove.t semiconductor the. ThIsvoltageenablesthe depletionlayer to be overcomeand for currentto flow. The Secondarises from the nonnal resistive losses in the device. As a result a figure for the