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Electronic Circuits
Frequency Response
rx Cf
B or G C or D
rin v1 Cin gm v1 gmb v2 ro B
v2
E or S
Cµo
Cµ = n
V
1 −
ψo
Cπ Cµ
2
MOS: Cgs = WLCox
3
Cgs Cgd
io io
ii ii
rx Cf
ii rin v1 Cin gm v1 ro io
io gmrin
(s) ≈
ii 1 + rin(Cin + Cf )s
io gmrin
(jω ) ≈
ii 1 + rin(Cin + Cf )jω
At high frequencies:
io gm
(jω ) ≈
ii (Cin + Cf )jω
io
gm
(jω ) =1 ⇒ =1
ii
ω =ωT (Cin + Cf )ωT
gm ωT
ωT = , fT =
Cin + Cf 2π
gm gm
BJT: ωT = MOS: ωT =
C π + Cµ Cgs + Cgd
RL RL
Vo Vo
RS RS
Vi Vi
RS rx Cf
vi vo
rin v1 Cin g m v1 ro RL
Cf
vo 1−s
(s) = K gm
vi 1 + a1s + a2s2
gmROLR rin
K=− = −gmROL
RS + rx RS + rx + rin
a2 = ROLRCf Cin
ROL = ro k RL
s s
s gm
N(s) = 1 − ⇒ z1 =
z1 Cf
Zx
Vi −A Vo
Zi
Vi Vi Vi ZxVi Zx
Zi = = V −V = = =
Ii i o Vi − (− AVi ) (A + 1)Vi A+1
Zx Zx
1 1 1
Zx = ⇒ Zi = = 0
, C0 = (A + 1)C
sC s(A + 1)C sC
RS +rx Cf
vi vo
rin v1 Cin gm v1 ro RL
⇓ Miller Approximation ⇓
RS +rx
vi vo
rin v1 Cin CM gm v1 ro RL
vo
CM = (A + 1)Cf , A=− = gm(ro k RL)
v1
RS +rx
vi vo
1
rin k
vo s(Cin + CM)
= −gmROL
1
vi RS + rx + rin k
s(Cin + CM)
rin 1
= −gmROL
RS + rx + rin 1 + s(Cin + CM)R
Miller approximation:
1
p1 = −
R(Cin + Cf (1 + gmROL))
Exact derivation:
1
p1 = −
ROL
p2 = − + + +
ROLCf RCin ROLCin Cin
gm
z1 =
Cf
1
p1 = −
ROL
gm
z1 =
Cµ
gm
ωT =
C π + Cµ
1
p1 = −
ROL
gm
z1 =
Cgd
gm
ωT =
Cgs + Cgd
RL RL
vod vod
vid RS 2 vid RS 2
2 2
vod
Dominant pole of (s) :
vid
1
p1 = −
ROL
RL RL
voc voc
RS RS
vic vic
2RT CT /2 2RT CT /2
RL 1 2RT
Acm(s) ≈ − , ZT = 2RT k =
ZT sCT/2 1 + sCTRT
RL
Acm(s) ≈ − (1 + sCTRT)
2RT
Acm
dB
+20 dB/dec
ω
log scale
Adm 1
ω1 ≈
dB −20 dB/dec RTCT
ω 1
log scale
ω2 ≈
R(Cin + CM)
CMRR
dB
ω
ω1 ω2 log scale
Vi Vi
RS Vo RS Vo
RL RL
RS rx
vi
rin v1 Cin gm v1
vo
1
ro RL gmb
0 R0L s
gmRL + 1−
vo rin z1
(s) =
vi 0 R0S + R0L 1 − s
1 + gmRL + p1
rin
1
gm +
1 rin
p1 = − , z1 = −
R1Cin Cin
R0S = RS + rx
1
R0L = ro k RL k
gmb
R0S + R0L
R1 = rin k
1 + gmR0L
1
gm +
z1 = − rπ ≈ − gm ≈ −ω
T
Cπ Cπ
1 R0S + R0L
p1 = − , R1 = rπ k
R1Cπ 1 + gmR0L
R0S = RS + rb , R0L = ro k RL
gm
z1 = − ≈ −ωT
Cgs
1 RS + R0L
p1 = − , R1 =
R1Cgs 1 + gmR0L
1
R0L = ro k RL k
gmb
rx rx
Cin
rin v1 Cin gm v1 (1+ gm R’L )rin
Zi Zi 1+gm R’L
R’L R’L
1
Z i = rx + R k + R0L
sC
Cin
R = (1 + gmR0L)rin , C=
1 + gmR0L
1
R0L = ro k RL k
gmb
BJT:
1
Zi = rb + R k + R0L
sC
Cπ
R = (1 + gmR0L)rπ , C=
1 + gmR0L
R0L = ro k RL
MOS:
1
Zi = + R0L
sC
Cgs
C=
1 + gmR0L
1
R0L = ro k RL k
gmb
vo
R’S
zin 1
v1 = 0 vo , zin = rin k
zin + RS sCin
0 zin + R0S
zin + R
Zo = (zin + R0S) k
S k 0
RL = k R0L
gmzin 1 + gmzin
1
R0S = RS + rx , R0L = ro k RL k
gmb
Zo = R0L
k
1 + gmrin 1 + sC 1 k r
in in
gm
1
> R0S ⇒ Zo is capacitive
gm
1
< R0S ⇒ Zo is inductive
gm
1
= R0S ⇒ Zo is resistive
gm
1
Practical design goals: rx RS , = RS
gm
BJT:
rπ + RS + rb 1 + sCπ ((RS + rb) k rπ )
Zo = ro k RL k
1
β+1 1 + sCπ
k rπ
gm
MOS:
1
1 1 + sCgsRS
Zo = ro k RL k k
gm 1 + s Cgs
gmb
gm
RS RS
Vi Vo Vi Vo
RL RL
gmb v1
gm v1
io
vo
vi
=i RS v1 rin Cin Cf RL
RS i
io 1
(s) = K s
ii 1−
p1
vo RL 1 1
(s) = K s s
vi RS 1− 1−
p1 p2
gm + gmb
K=
1 1
gm + gmb + +
RS rin
1 1
gm + gmb + +
RS rin 1
p1 = − , p2 = −
Cin Cf RL
BJT:
vo RL gm 1 1
(s) =
vi RS gm + 1 1 − s 1 − s
α RS p1 p2
gm 1
+
α RS 1
p1 = − , p2 = −
Cπ CµRL
MOS:
vo RL gm + gmb 1 1
(s) = s s
vi RS g + g 1
m mb + 1− 1−
RS p1 p2
1
gm + gmb +
RS 1
p1 = − , p2 = −
Cgs CgdRL
K
A(s) =
1 + b1s + b2s2 + · · · + bnsn
K
=
s
s
s
1− 1− · · · 1 −
p1 p2 pn
1
n
b1 = −
X
i=1 pi
If |p1| |p2|, |p3|, ... then
1 K
b1 ≈ , |A(jω )| ≈
v
p 2
u
ω
u
1 u
u
1+
u
u
p1
t
Circuit with
Circuit with
C3 no capacitors
no capacitors
k
v
Ck Rko
C4
ik
vk
Rko = , Tko = RkoCk
ik
n
b1 = RkoCk = R1oC1 + R2oC2 + · · · + RnoCn
X
k=1
1 1
ωH ≈ |p1| ≈ ≈
b1 Tko
X
Circuit with
Circuit with
C3 no capacitors
no capacitors
k
v
Ck Rks
C4
ik
vk
Rks = , τks = RksCk
ik
n 1
ωL ≈
X
k=1 τks
vk
Rks = , τks = RksCk , k = 1, 2
ik
2 1
p2 ≈ −
X
k=1 τks
RL RL
vo vo
Q2 M2
vi Q1 vi M1
VDD
M3 M4
Vo
M1 M2
Vid Vid
2 IT 2
Vid Vid
v1 gm1 v1 gm2 v2 v2
2 2