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Fourth Semester
(Regulation 2017)
1. Draw the V-I characteristics of a PN junction diode and reason out Why does
the reverse current show a sudden increase at the critical voltage?
2. Name any semiconductor device which operates under the reverse bias in the
breakdown region.
3. Conduct suitable experiment and draw the hybrid π model of a transistor in CE
configuration. Also calculate H-parameters.
4. Conduct suitable experiment and draw the input and output characteristics of a
transistor in CE configuration
5. Conduct suitable experiment and draw the output characteristics of a transistor
in CE configuration. Also mark the active, cutoff and saturation region.
6. Draw the JFET Gate transfer characteristic by conducting suitable experiment.
7. Design and verify JFET as a switch with suitable example.
8. Draw the static emitter characteristic of a transistor with single junction by
conducting suitable experiments.
9. Design a relaxation oscillator using UJT and plot the output characteristic.
10.Design an oscillator and observe the effect of variation in R & C on oscillator
frequency.
11. Implement and verify the truth tables of i. AND ii. OR iii. NOT logic gates
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Amplifier.