EC8553 Electron Devices and Circuits Question Bank

EC8351 – Electron Devices & Circuits
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
UNIT-I PN JUNCTION DEVICES
PART-A
1. State any two disadvantages of half wave rectifier. (ND 2018)
Disadvantage of Half Wave Rectifier:
 Since, power is delivered only during one half of the cycle of the input alternating
voltage, therefore, its power output and rectification frequency is low.
 Transformer utilization factor is also low.
 The DC output power produced from the half wave rectifier is not satisfactory to
make a general power supply.
2. An a.c voltage of peak value 20 V is connected in series with a silicon diode and load
resistance of 500 Ω. If the forward resistance of diode is 10 Ω find the peak current
through the diode. (ND 2018)
 If you have 20V AC source and 500ohm resistor to connect the si diode which have
10ohm forward bias resistance. Then if you connected in series then the effective
voltage will be 500+10=510 ohm
Then from V=IR
V=20v ; R= 510 ohm so the current will be
I= 20/510
I= 0.039A
The current will flow only in positive or negative half cycle as you connected the
diode.
But if you connect in parallel then the diode will damage.
3. State few applications of Zener diode.

 The applications of Zener diode:
 It is used as voltage regulator
 It is used as voltage reference
 It is used as voltage clamper
 It is used for meter protection
4. A silicon diode has a saturation current of 7.5μA at room temperature 300K.

Calculate the saturation current at 460 K.
Given: I01 = 7.5μA = 7.5 X 10-6
T1 = 300 K,
T2 = 460 K
Solution:
a. ΔT = T2 – T2 = 460 – 300
b. ΔT = 160 K
c. I02 = 2(ΔT/10) x I01
d. = 2(160/10)X7.5 10-6 I02
e. = 0.49152A
EDC 1
KCE/EEE/QB/II YR/EDC
5. Draw the symbol of the following devices.PN Diode (b)Zener Diode (C)LED (d) UJT
(a)PN Diode: (b)Zener Diode:
(c)LED: (d)UJT:
6. What is the transition and diffusion capacitance?

 When P-N junction is reverse biased the depletion region acts as an insulator or as
a dielectric medium and the P-type an N-type region have low resistance and act as
the plates. Thus this P-N junction can be considered as a parallel plate capacitor.
This junction capacitance is called transition capacitance and is denoted as C T.
 When the junction is forward biased, a capacitance comes into play that is known
as diffusion capacitance. It is much greater than the transition capacitance. It is
denoted as CD.
7. What is rectifier? List its types.

 A rectifier is an electrical device composed of one or more diodes that converts
alternating current (AC) to direct current (DC).
 This process is called rectifier.
 There are various types of rectifiers:
 Half wave rectifier
 Full wave rectifier
 Bridge rectifier.
8. What is meant by dynamic resistance of diode?

 Dynamic resistance of a diode can be defined as the ratio of change in voltage
across the diode to the change in current through the diode.
r=V/I
where
r - Dynamic resistance of a diode (Ω)
V - Change in voltage across the diode (V)
I - Change in current through the diode.(A)
9. Distinguish between Zener breakdown and Avalanche breakdown.

Zener break down Avalanche breakdown
 Breakdown occurs due to  Breakdown occurs due to
heavily doped junction and avalanche multiplication between
applied strong electric field thermally generated ions
 Doping level is high  Doping level is low
 Breakdown occurs at lower  Break down occurs at higher
voltage compared to voltage
avalanche breakdown
EDC 2
10.What is peak inverse voltage?

 Peak inverse voltage (PIV) is the maximum voltage applied across the diode when
it is reverse biased without destroying it.
 The peak inverse voltage is either the specified maximum voltage that a diode rectifier
can block, or, alternatively, the maximum that a rectifier needs to block in a given
application.
11.Define knee voltage of a diode.

 When diode is forward biased, some voltage is necessary to overcome the barrier
potential, to make diode conduct. This is called knee voltage of a diode.
 It is also called as cut-in-voltage or threshold voltage.
12.What is meant by doping in a semiconductor?

 The process of adding impurity to pure semiconductor to increase the electrical
characteristics of semiconductor is known as doping.
 Normally trivalent and pentavalent elements are used to dope Silicon and Germanium.
When an intrinsic semiconductor is doped with trivalent impurity it becomes a P-type
semiconductor.
13.What is diffusion capacitance?

 The diffusion capacitance of forward biased diode is defined as the rate of change
of injected charge with voltage.
CD= dq/dv
14.Give the diode current equation.

I=Io [eV / ηVT – 1]
I = Diode current
Io = Reverse saturation current in amperes
V = Applied voltage
η = 1 for germanium diode, 2 for silicon diode
VT=Threshold Voltage
15.What is heat sink? List out the merits of heat sink.

 A heat sink is a passive heat exchanger that transfers the heat generated by an
electronic or a mechanical device into a coolant. The most common heat sink
materials are aluminium alloys.
 The merits of heat sink:
 Heat sink can dissipate heat more rapidly than the electronic component.
 It has more surface area.
 This compound can be purchased at any electronics parts store
16.Define the transition capacitance of the diode.

 A capacitance existing at the PN junction when the diode is reverse biased where
the two regions act as the plates while the depletion region acts as dielectric is
called a transition capacitance of a diode.
EDC 3
17.Explain the terms knee voltage & break down voltage with respect to diodes.
 Knee voltage: It is the forward voltage of a PN diode at which the current through
the junction starts increasing rapidly.
 Breakdown Voltage: It is the reverse voltage of a PN junction diode at which the
junction breaks down with sudden rise in the reverse current.
18.Why Si is preferred over Ge in the manufacture of semiconductor devices?

 The Si is preferred over Ge in the manufacture of semiconductor device because,
 Silicon has low leakage current
 Silicon has higher temperature stability
 The peak inverse voltage for Si is higher.
19.State any four application of LCD.

 LCDs are generally applicable in the field of medical, domestic and industrial
electronics. Some of the applications of LCD are:
 Wrist watches.
 Telephones and cellular phones.
 Digital panel meters.
 PCO monitors.
20.What is the static resistance of a diode?

 Static resistance is the normal ohmic resistance in accordance with Ohm's Law. It
is the ratio of voltage to current. Static resistance is a constant at a given
temperature.
R = V/ I
where
R - Static resistance of a diode(Ω)
V - Voltage across the diode(V) I - current across the diode(A)
21.What are the limitations of LCD?

 The limitations of LCD:
 It requires an external or internal light source
 Temperature range is limited to about 60oC
 Life time is limited due to chemical degeneration.
22.What is the forbidden gap?

 Forbidden gap is the energy gap between valence and conduction bands. For
insulators, the gap will be more and for conductors it is nil.
 The term "band gap" refers to the energy difference between the top of the valence band
and the bottom of the conduction band
23.What is biasing?
 Applying external DC voltage to any electronic devices is called biasing.
 Depending upon the polarity of the DC voltage externally applied to it, the biasing is
classified as forward and reverse biasing.
24.List the diode parameters.

 Bulk resistance
 Static resistance
 Dynamic resistance
 Reverse resistance
EDC 4
25.What are the advantages of laser diodes?

 Laser diodes are very compact.
 Relatively efficient when compared to gas lasers.
 Rugged and long life
26.What are the categories of laser diodes?

 Surface emitting laser diodes.
 Edge emitting laser diodes.
27.Define Peak Inverse Voltage (PIV).

 PIV is defined as the maximum reverse voltage that a diode can withstand without
destroying the junction.
PART-B
1. Explain the working of Zener diode as voltage regulator. (07)
2. For the following circuit, find the maximum and minimum values of zener diode current.
(06)
3. Explain the working of a bridge rectifier.
4. In a bridge rectifier circuit, input supply is 230 V, 50 Hz. Primary to secondary turns ratio
is 4:1, load resistance is 200Ω. The diodes are ideal. Find the dc output voltage, PIV and
output signal frequency. (07)
5. Derive the expression for space charge or transition capacitance of PN diode under
reverse bias with a neat diagram. (13)
6. Explain the operation of a Half wave rectifier and derive its various parameters. (13)
7. Explain the forward & reverse characteristics of PN Junction diode. (13)
8. Briefly explain about the following: (13)
a) Laser diodes
b) Zener diode as voltage regulator
9. With neat sketch, explain the construction operation and its characteristics of PN junction
diode. Also list its advantages, disadvantages and list its applications. (13)
10. Explain the working of bridge rectifier. Give the expression for RMS current, PIV, ripple
factor and efficiency. (13)
11. Explain the working of a PN Junction diode and Zener diode and explain their VI
characteristics. (13)
12. Explain the working of centre tapped full wave rectifier (with and without filter) with neat
diagrams. (13)
13. With neat diagram explain the construction and working of LED. (08)
14. Explain the operation of FWR with centre tap transformer. Also derive the following for
this transformer. (15)
a) DC output voltage
b) DC output current
c) RMS output voltage
15. Explain the following regulator circuits : (15)
a) Transistorized shunt regulator
b) Zener diode shunt regulator
16. Discuss the working principle, characteristics and applications of LED in detail. (07)
EDC 5
17. Draw the circuit diagram and explain the operation of full wave rectifier using centre tap
transformer and using bridge rectifier without centre tap transformer. Obtain the
expression for peak inverse voltage. (13)
18. Explain the operation of a full wave rectifier and derive its ripple factor. (08)
19. Show that a PN junction diode can be used as rectifier. (08)
20. Explain the construction and principle of operation of the following diodes with neat
sketches. (i)Varactor diode (ii)Tunnel diode. (08)
UNIT-II
TRANSISTORS
PART-A
1. State any two differences between JFET and BJT. (ND 2018)
Parameters Bipolar Junction Junction Field Effect
Transistor (BJT) Transistor (JFET)
JFET offers large input
Input BJT offers low input resistance order
Resistance resistance. of 1MΩ1MΩ to 5MΩ5MΩ.
Biasing used Fixed bias, Collector base Self bias& Voltage divider
Operating Active, Saturation & Cut Ohmic & Pinch off region
Thermal Thermal runaway occurs No thermal runaway.
Type of Current controlled device. Voltage controlled device.
Terminals Base, Emitter & Collector. Gate, Drain & Source.
Input Input current is order of Gate current is order of nA
Applications Low Current application. Low voltage application.
2. When VGS of a JFET changes from -3.1 V to -3V, the drain current changed from 1 mA
to 1.3 m.A. Find the value of transconductance. (ND 2018)
3. Define early effect.

 The early effect, named after its discoverer James M. Early, is the variation in the
width of the base in a Bipolar Junction Transistor (BJT) due to a variation in the
applied base-to-collector voltage.
 A greater reverse bias across the collector–base junction, for example, increases the
collector base depletion width, decreasing the width of the charge carrier portion of
the base. This is also known as base width modulation.
4. Determine the base current for the CE transistor circuit if Ic=80mA & β=170
Given : Ic=80mA & β=170
Solution : β=IC/IB
Base Current = IC/β
= 80mA/170
=0.4mA
5. What is meant by biasing of transistor?

 To use the transistor in any application it is necessary to provide sufficient voltage
and current to operate the transistor.
 This is called biasing.
EDC 6
 Biasing in electronics is the method of establishing predetermined voltages or

currents at various points of an electronic circuit for the purpose of establishing
proper operating conditions in electronic components.
6. Compare BJT and JFET.

BJT JFET
 Bipolar device  Unipolar device
 Gain is characterized by  Gain is characterized by trans
voltage gain conductance.
 High noise level  Low noise level
 Low input impedance due to  High input impedance due to
forward bias reverse bias
7. Mention the two disadvantages of JFET over BJT.

The disadvantages of JFET over BJT:
 Voltage gain is low
 JFET is costlier than BJT.
 Easily damaged by static.
 More expensive than bipolar
 Difficult to bias.
8. What is pinch-off voltage in FET?

 In the VI characteristics of JFET, at some value of V DS, drain current ID cannot be
increased further, due to reduction in channel width.
 Any further increase in VDS does not increase the drain current I D. ID approaches the
constant saturation value.
 The voltage VDS at which the current ID reaches to its constant saturation level is
called “Pinch-off voltage”, Vp.
9. Define amplification factor in JFET.

 The amplification factor in JFET is defined as the ratio of change in drain-source
voltage VDS to the change in gate-source voltage VGS at constant drain current ID.
 It is also called mutual conductance.
μ = ΔVDS/ΔVGS: ID constant
10.Define intrinsic stand-off ratio of UJT and draw its equivalent circuit.
 The resistance ratio RB1/RBB is an important characteristic of UJT.
 It is known as the “intrinsic stand-off ratio” and is designated by “η”.
 Hence η = RB1/RBB= RB1 / RB1+ RB2.
a.
11.In a bipolar transistor which region is wider and which region is thinner? Why?
 The middle region of bipolar junction transistor is called as the base of the
transistor. Input signal of small amplitude is applied to the base.
EDC 7
 This region is thin and lightly doped. The magnified output signal is obtained at the
collector. This region is thick and heavily doped.
12.Mention some applications of UJT.

Applications of UJT:
 UJT can be used as trigger device for SCRs and TRIACs.
 Other applications include non-sinusoidal oscillators, saw tooth generators, phase
control and timing circuits generators.
13.List the JFET parameters.

The JFET parameters:
 Transconductance (gm)
 Input resistance and capacitance(ri&cin)
 Drain to source resistance (rd)
 Amplification factor.(µ)
14.Define pinch off voltage with respect to JFET

 When a drain to source voltage increases continuously after certain extent, the
channel width reduced or closed results in the charge carrier flow from source to
drain is pinched off.
 The minimum voltage required to obtain this condition is known as pinch off
voltage.
15.State the advantages of FET over the BJT.

The advantages of FET over BJT:
 FET is a unipolar device.
 FET is less noisy than BJT.
 It is a voltage controlled device.
 FET has very high voltage gain.
16.Mention the applications of FET.

The applications of FET:
 FET acts as an amplifier
 FET acts asa modulator
 FET acts as an oscillator
 FET acts as a switch in a digital circuit
17.Give the drain current equation of JFET.

ID = IDSS (1 – VGS) 2
ID = drain current(mA)
IDSS = saturation drain current(mA)
VGS = gate source voltage (V)
VP = pinch-off voltage (V)
18.Define transistor action.

 A transistor consists of 2 coupled PN junctions.
 The base is a common region to both junctions and makes a coupling between
them.
 Since the base regions are smaller, a significant interaction between junctions will
be available. This is called transistor action.
19.What is the difference between DIAC and TRIAC?

DIAC TRIAC
EDC 8
 DIAC is a two terminal  TRIAC is the three terminal device.

device.
 It is made of two zener  It consists of two thyristors connected
diodes connected back to in parallel but in opposite directions.
back.
20.Define power transistors.

 Power transistors are those which handle a large amount of current and also
dissipates large amount of power across collector base junction.
 A transistor is a semiconductor device used to amplify and switch electronic signals
and electrical power.
21.What are the types of breakdown in transistor?

 The types of breakdown in tranisistor:
 Avalanche multiplication (or) Divalanche breakdown,
 Reach through (or) Punch through.
22.Compare N-channel and P-channel JFET.

N-Channel JFET P-Channel JFET
 Majority carriers are  Majority carriers are holes
electrons
 Low input noise  High input noise
 High transconductance  Low transconductance
 Mobility of electrons  Mobility of holes
23.Explain NPN and PNP transistor.

NPN Transistor:
 InNPN transistor, P-type semiconductor is sandwiched between two n-type
semiconductors.
 The emitter region is made up of n-type semiconductor base region is made of p-
type semiconductor collector region is made of n-type semiconductor.
PNP Transistor:
 In PNP transistor, n-type semiconductor is sandwiched between two P-type
semiconductors.
 Emitter region is made of P-type, collector region is made of P-type and the base
region is made of n-type, semiconductor.
24.Define the different operating regions of transistor.

 Active Region: The current from collector to emitter is proportional to the current
flowing into the base.
 Cutoff Region: The region in which the collector and emitter functions are both
reverse biased.
 Saturation Region: The region in which both the collector and emitter functions
are forward biased.
25.Which is the most commonly used transistor configuration? Why?

The CE Configuration is most commonly used. The reasons are
 High Current gain
 High voltage gain
 High power
 Moderate input to output ratio.
EDC 9
26.Define holding current and latching current.

 The holding current (IH) is the minimum value of forward current which required
tomaintain the conduction of device.
 The latching current (IL) is the minimum value of anode current required to turn
ON a device from its OFF state.
27. What is Q point?

 The level of current and voltages fixed in a transistor define the point at which the
transistor operates.
 This point is called Q point.
PART-B
1. A germanium transistor is to be operated at zero signal IC = 1 mA. If the collector supply
voltage VCC = 12 V, what is the value of RB in the base resistor method? Assume β = 100. If
another transistor of same batch with β = 50 is used, what will be new value of zero signal
IC for same RS? Comment on the results. (13)(ND 2018)
2. Discuss the characteristics of UJT. (07)(ND 2018)
3. The intrinsic stand-off ratio for a UJT is 0.6. If the inter base resistance is 10 kΩ, what are
the value of RB1 and RB2? (04)(ND 2018)
4. State two applications of UJT. (02)(ND 2018)
5. With neat sketch, explain the construction and operation of SCR. (13)
6. Describe the operation of UJT as a relaxation oscillator and derive its
frequency oscillation. (13)
7. Explain the selection of Q point for a transistor bias circuit and discuss the
limitations on the output voltage swing. (13)
8. Explain the construction and operation of NPN transistor with neat sketch. Also
comment on the characteristics of NPN transistor. (13)
9. With neat sketch, explain the construction and operation of SCR. (13)
10. Explain the construction and working principle of DIAC and TRIAC with diagrams. (08)
11. Draw the low frequency equivalent model of FET. With a neat sketch, explain the
construction and characteristics of enhancement MOSFET. (13)
12. Draw the high frequency equivalent model of FET with a neat sketch; explain the
construction and characteristics of depletion MOSFET. (13)
13. Draw the circuit diagram of common source FET amplifier and give the design steps to
find the component values used in the circuit. (13)
14. Explain the construction and working of enhancement MOSFET and depletion MOSFET.
Draw the characteristics. (13)
15. Explain how the transconductance of a JFET varies with drain current and gate voltage
characteristics and transfer characteristics. (08)
16. JFET has the following parameters IDDS = 32 mA, VGS (off) = -8 Volts, VGS = -4.5 Volts. Find
the values of drain current. (08)
17. Explain the working of n-channel enhancement type MOSFET. Sketch its typical
characteristics. (08)
18. Explain the application of FET as a voltage variable resistor. (08)
19. Describe the operation of common drain FET amplifier and derive the equation
for voltage gain. (08)
20. In the common drain FET amplifier, evaluate the voltage gain V. (08)
EDC 10
21. Explain in detail the construction and working principle of depletion MOSFET. Also
explain how depletion MOSFET acts both in enhancement and depletion mode. (13)
22. With a neat circuit diagram explain the operation of a common source amplifier. (08)
23. From the low frequency model, determine the input and output impedances and
the voltage gain of a JFET. (08)
24. Differentiate JFET from MOSFET. Explain the difference. (08)
UNIT-III
AMPLIFIERS
PART-A
1. For a certain D-MOSFET , IDSS = 10 mA and VGS(off) = - 8 V. Check if it is an n

channel or p channel device/ Justify your answer. (ND 2018)
In a MOSFET, there is no gate current.
Therefore, there is no voltage drop across resistor RG .
Thus, VGS = 0. Further,
when VGS =0, ID = IDSS, the maximum drain current.
Summing up voltages in the output loop and using ID = IDSS,
We have, IDSS .RD + VDS = VDD
or
VDS = VDD – IDSS . RD = 18 – 10 X 10-3 X 0.68 X 103 = 18 – 6.8
or
VDS = 11.2 V
2. State the phase relationships between input/output currents and phase

relationships between input/ output voltages of various transistor configurations.
(ND 2018)
3. State Miller’s theorem.

 Miller’s theorem refers to the process of creating equivalent circuits.
 It asserts that a floating impedance element, supplied by two voltage sources
connected in series, may be split into two grounded elements with corresponding
impedances.
 There is also a dual Miller theorem with regard to impedance supplied by two
current sources connected in parallel.
 The two versions are based on the two Kirchhoff's circuit laws.
4. Draw the hybrid small signal model of CB configuration.
5. Draw the small signal equivalent circuit of a CS JFET.
EDC 11
6. What is the need of coupling capacitors in amplifier design?

 A coupling capacitor is inserted in series with the measured voltage signal to
eliminate any vertical offset of the displayed waveform due to DC voltage combined
with the signal.
 This works fine when the AC component of the measured signal is of a fairly high
frequency, and the capacitor offers little impedance to the signal.
7. Define the four h-parameters.

The four hybrid parameters h11, h12, h21 and h22 are defined as follows.
h11 = [V1 / i1] with V2 = 0, = Input Impedance with output part short circuited.
h22 = [i2 / V2] with i1 = 0, = Output admittance with input part open circuited.
h12 = [V1 / V2] with i1 = 0, = reverse voltage transfer ratio with input part open
circuited.
h21 = [i2 / i1] with V2 = 0, = Forward current gain with output part short circuited.
8. Define α and β of a transistor.

 α is defined as the ratio of the collector current resulting from carrier injection to
the total emitter current
α = IC/IE
 β is defined as the ratio of collector current to base current. β = IC/IB.
9. Which is the most commonly used transistor configuration? Why?
The most commonly used transistor configuration is common emitter due to the following
reasons:
 High Current gain
 High power
 Moderate input to output ratio.
10.State the advantages of optocoupler.

The advantages of optocoupler:
 It is compact and has less weight
 Much faster than isolation transformers and relays
 Has wide band signal transmission capability
 Easy to interface with logic devices.
11.What is thermal runaway?

 In a power transistor the increase in collector current increases the power
dissipated at the collector junction.
 The process is cumulative and it is referred to as self-heating. The excess heat
produced at the collector base junction may even burn and destroy the transistor.
The situation is called “Thermal runaway” of the transistor.
12.Why FET is called unipolar device?

 In FET (Field Effect Transistor) current is carried by only one type of charge
particles, either electrons or holes.
 Hence FET is called unipolar device.
13.List the advantages of CC configuration.

 The advantages of CC configuration:
 High input impedance.
 Low output impedance.
 Voltage gain is nearly 1, hence it is used as impedance matching circuit.
EDC 12
14.Which of the BJT configuration is suitable for impedance matching applications?

Why?
 CC configuration is suitable for impedance matching applications.
 Its driving low impedance load from a high impedance source. Because it has unity
voltage gain.
15.Give the current gain expression for a common emitter transistor configuration.
 Current gain is defined as the ratio between the output current I c to input current Ib,
when output voltage Vce is zero.
hfe= Ic/Ib
16.What is reverse saturation current?

 The current due to the minority carriers in reverse bias is said to be reverse
saturation current.
 This current is independent of the value of the reverse bias voltage.
17.What are the advantages of FET?

The advantages of FET:
 Input impedance is very high.
 This allows high degree of isolation between the input & output circuit.
 Current carriers are not crossing the junctions hence noise is highly reduced.
 It has a negative temperature co-efficient of resistance. This avoids the thermal
runaway.
18.What are the applications of JFET?

The application of JFET:
 FET is used as a buffer in measuring instruments and receivers.
 FET is used in RF amplifiers. .
 FET is used in communication equipment.
19.Mention the three regions that are present in the drain source characteristics of
JFET.
The three region in drain source source characteristics of JFET:
 Saturation region
 Break down region
 Ohmic region
20.Give the drain current equation of JFET.

 ID = IDSS (1 – VGS )^2/ Vp
 ID = drain current (mA)
 IDSS = saturation drain current (mA)
 VGS = gate source voltage (V)
 VP = pinch-off voltage (V)
21.Comparison between JFET and MOSFET

JFET MOSFET
 Gate is insulated from channel by a
 Gate is not insulated from channel
thin layer ofSiO2
 Four types - P-channel enhancement,
 There are two types N-channel
P-channel depletion, N-channel
and P-channel
enhancement, N-channel depletion
EDC 13
 Cannot be operated in depletion

 Can be operated in depletion and
and
enhancement modes
 enhancement modes
 There is a continuous channel only in
 There is a continuous channel depletion type, but not in
enhancement type
22.Difference between voltage and power amplifier.

Voltage Amplifier Power Amplifier
 Voltage amplifiers are devices that  Power amplifiers are devices that
amplify the input voltage. amplify the input power.
 Current gain is very low  Significant current gain
 Higher power efficiency  Lower power efficiency
 Voltage amplifier does not require  Power amplifiers require additional
additional cooling mechanism due cooling mechanism due to more heat
to less heat dissipation. dissipation.
23.What are the benefits of h-parameters?

 Real numbers at audio frequency.
 Easy to measure
 Can be obtained from the transistor state characteristics curves.
 Convenient to use in circuit analysis and design.
24.What are the characteristics of common emitter follower?

 Large current gain
 Large voltage gain
 Large power gain
 Voltage phase shift is about 180
25.What are the characteristics of common collector amplifier?

 High current gain
 Unity voltage gain
 Large power gain
 High input impedance
26.What are the characteristics of common collector amplifier?

 Low current gain
 High power gain
 Low input impedance
27.Mention two important characteristics of CC circuit.

 A CC circuit has a voltage gain of 1,high input impedance and low output
impedance
 No phase shift between input and output.
PART B
1. For the circuit shown below, find (i) dc bias levels (ii) dc voltages across the capacitors
(iii) ac emitter resistance (iv) voltage gain and (v) state of the transistor.
(13) (ND 2018)
EDC 14
2. Explain the working of a n-channel MOSFET. Discuss its transfer characteristics.

(13) (ND 2018)
3. Explain the common drain MOSFET amplifier and derive its input impedance, output
impedance and voltage gain. (13)
4. Determine input impedance, output impedance, voltage gain and current gain of common
emitter configuration by using hybrid model. (13)
5. Discuss the factors involved in the selection of IC, RC and RE for a single stage common
emitter BJT amplifier circuit, using voltage divider bias. (07)
6. Draw the h parameter equivalent circuit for a typical common emitter amplifier and
derive expression for Ri,Ai,Av and Ro. (13)
7. Derive the expression for voltage gain of CS amplifier. (08)
8. For CS amplifier, the operating point is defined by V gsq=-205v, Vp=-6V,Idq=2.5 mA with
IDss=mA. Also RG = 1MΩ, RS = 1kΩ, RD=2.2kΩ and VDD=15V.Calculate gm,rd,Zi,Zo and Av.
(08)
9. Explain the input and output characteristics of a CE transistor configuration. List out the
comparisons between CE, CB and CC configurations. (13)
10.Draw the hybrid model of transistor in CE and CB configurations. Explain how h-
parameters can be determined from the transistor characteristics. (13)
11.Draw the h-parameter equivalent circuit of a transistor in CE configuration. (13)
12.Describe the methods of determination of h-parameters from its static input and
output characteristics. (13)
13.Describe the static input and output characteristics of a CB transistor with neat
circuit diagram. (13)
14.Derive the expression for current gain, input impedance and voltage gain of a CE
Transistor amplifier. (13)
15.Explain the important characteristics of optocoupler. (08)
16.Explain the switching characteristics of transistor with neat sketch. (08)
17.Draw and explain the input and output characteristics of a BJT in CE configuration. (08)
18.Write a note on optocouplers. (08)
19.Compare the three transistor configuration with regard to input and output
resistance, current and voltage gain. (08)
20.Draw the circuit for determining the transistor common base characteristics and
explain how the characteristics are measured and draw the graphs. (13)
21.For a common emitter circuit draw the h-parameter equivalent circuit and write the
expressions for input impedance, output impedance and voltage gain. (13)
22.Draw the Hybrid model of CE configuration and also derive the expressions for its
input and output impedances, current and voltage gain. (13)
UNIT-IV
MULTISTAGE AMPLIFIERS AND DIFFERENTIAL AMPLIFIER
PART-A
1. A multistage amplifier employes five stages each of which has a power gain of 30.
What is the total gain of the amplifier in db? (ND 2018)
2. Define differential mode signals of a differential amplifier. (ND 2018)

 In the differential mode, the signals v1 and v2 are different
 Differential mode gain : Vd = (V1-V2)
3. Define conversion efficiency of power amplifier.

 The conversion efficiency (η) is defined as the ratio of ac power delivered to the
load to the dc power supplied by the source.
RE << Rload,
 so that VCEQ ≈ VCC and
ICQ ≈ VCC/Rload,
EDC 15
4. CMRR of an amplifier is 100 dB, calculate common mode gain, if the differential gain
is 1000.(AU ND 2016)
Given: CMRR=100dB, Ad=1000
Solution: CMRR=Ad/Ac
Ac=Ad/CMRR
Ac=1000/100
Ac=10
5. What is the need for neutralization?

 The neutralization is needed for the following two causes:
 To achievement of stable and consistent operation for conditions of changing bias
that are encountered as a result of transistor parameter variation, temperature
change or applied gain control.
 Tendency of transistor amplifiers to oscillate as a result of regeneration through
the inherent internal capacity of the transistors. This tendency neutralization is
required.
6. What is cascade amplifier?

 A multistage amplifier using two or more single stage common emitter amplifier is
called as casesade amplifier.
 The casecade amplifier is a wider frequency bandwidth than the common emitter
circuit.
7. Draw the ideal tuned circuit and write the expression for its resonant frequency.
fr=1/2π(LC)1
fr = resonant frequency (Hz) L = inductance (H) C=Capacitance (F)
8. Write down the need of cascading the amplifiers.

 The need of cascading the amplifier:
 To increase the voltage gain of the amplifier.
 To increase the current gain of the amplifier.
9. What are the types of multivibrators?

There are two types of multivibrators:
 Astable multi vibrator: which the circuit is not stable in either state, it continually
switches from one state to the other. It functions as a relaxation oscillator.
 Monostable multi vibrator: which one of the states is stable, but the other state is
unstable (transient).
 A trigger pulse causes the circuit to enter the unstable state. After entering the
unstable state, the circuit will return to the stable state after a set time.
10. What are the advantages of differential amplifier?

The advantages of differential amplifier:
 Differential amplifier helps to increase CMRR.
 Differential amplifier provides immunity to external noise.
 Differential amplifier reduces second order harmonics.
EDC 16
11. What is the significance of CMRR in differential amplifier?

 The ability of differential amplifier to reject a common mode signal is expressed by
a ratio called common mode rejection ratio, denoted as CMRR.
 The significance of CMRR is that larger the value of CMRR, better the differential
amplifier.
12. Mention the operating modes of MOSFET.

 When VGS< VT, no conductive channel is present and ID= 0, the cutoff region.
 If VGS< VT and VDS<VDSsat, the device is in the triode region of operation. Increasing
VDS increases the lateral field in the channel, and hence the current. Increasing V GS
increases the transverse field and hence the inversion layer density, which also
increases the current
 If VGS< VT and VDS> VDS sat, the device is in the saturation region of operation. Since
the drain end channel density has become small, the current is much less
dependent on VDS, but is still dependent on VGS, since increased VGS still increases
the inversion layer density.
13. Define CMRR.

 The ability of differential amplifier to reject a common mode signal is expressed by
a ratio called common mode rejection ratio denoted as CMRR.
CMRR = ρ = Ad/Ac
Ad=differential mode gain
Ac=common mode gain
14. What are the parameters associated with multistage amplifier?
The parameters associated with multistage amplifier:
 Input impedance (Zin)
 Output impedance (Zout)
 Voltage gain(Av)
15. What is differential amplifier?

An amplifier which amplifies the difference between two input signals is called differential
amplifier. Some features of differential amplifier:
 High differential voltage gain.
 Low common mode gain.
 High CMRR.
 Two input terminals.
16. What are the DC characteristics of op-amp?

The DC characteristics of op-amp:
 Input bias current
 Input offset current
 Input offset voltage
 Thermal drift
17. List out the some features of a differential amplifier.

The features of a differential amplifier:
 Two input terminals.
 High input impedance.
 Large bandwidth.
 Low offset voltages and currents.
EDC 17
18. What are the limitations of h-parameters?

 The limitations of h-parameters:
 Obtaining the exact value of h-parameters for a particular transistor is quite
difficult.
 Highly suitable only for small AC signals.
19. Mention some of the linear applications of op amps.

The linear applications of op-amps:
 Adder
 Subtractor
 Voltage –to- current converter
 Current –to- voltage converters
 Instrumentation amplifier
 Analog computation
 Power amplifier
20. What are the various methods used for transistor biasing?
The various methods used for transistor biasing:
 Base resistor method
 Biasing with feedback resistor
 Voltage divider bias
21. What is bootstrap technique? Mention its advantages also.

The bootstrap was introduced by Efron (1979) as a computer based method to estimate
the standard deviation.
 Advantages of bootstrap technique:
 It is completely automatic
 Requires no theoretical calculations
 Not based on asymptotic results
 Available no matter how complicated the estimator θ is.
22. What is meant by bandwidth and gain bandwidth product?

 The range of frequencies between the upper cut off frequencies and lower cut off
frequencies is known as bandwidth.
 The product of gain and bandwidth of an amplifier is always constant. If gain
increases, bandwidth decreases and vice versa.
23. Compare the efficiency of class A and class B amplifiers.

 Efficiency of class- A = 25% to 50%
 Efficiency of class- B = 78.5%
24. How are amplifiers classified based on the biasing condition?

Based on biasing conditions, the amplifiers are classified in the following
 Class -A
 Class- B
 Class- C
 Class- AB
25. Define Class- C operation of power amplifier.
EDC 18
 A power amplifier is said to be class-C operation if its output is obtained for less
than a half cycle period of the input ac signal.
26. What are the applications of tuned amplifiers?

 Tuned amplifiers are used in high power, high frequency applications such as radio
frequency transmitters.
23.Two amplifier having gain 20dB and 40dB are connected. Find the overall gain in
dB?
 Overall gain in dB = 20+40 =60 dB.
PART-B
1. A parallel resonant circuit has a capacitor of 250 pF in one branch and inductance of
1.2mH and a resistance of 10 Ω in the parallel branch. Find(1) resonant frequency (2)
importance of the circuit at resonance (3) Q –factor of the circuit.
(06)(ND 2018)
2. Draw the frequency response of an ideal and a practical tuned amplifier and discuss their
characteristics. (07) (ND 2018)
3. Compare voltage and power, amplifiers. (06) (ND 2018)
4. Explain the working of a single ended input differential amplifie. (07) (ND 2018)
5. Explain the common mode and differential mode analysis of differential amplifier and
derive its CMRR. (13)
6. What is neutralization? Explain any two methods of neutralization. (13)
7. With neat sketch, explain the BJT differential amplifier with active load and derive for A d,
Ac and CMRR. How CMRR can be improved? (13)
8. Explain with circuit diagram class B power amplifier and derive for its efficiency. (07)
9. With neat circuit, explain and derive the gain and bandwidth of a single tuned amplifier.
(06)
10.With neat sketch, explain two stage cascaded amplifier and derive it. (13)
11.Draw a differential amplifier and its AC equivalent circuit. Derive for A d and Ac. (13)
12.Explain the working of a Schmitt trigger with a neat sketch. (13)
13.Explain the construction, equivalent circuit and operation of UJT. Draw the characteristics
of UJT. (13)
14.Explain how UJT is used to generate saw tooth waveform. (13)
15.Explain the concept of negative feedback in amplifier. Derive the expressions for voltage
gain, input impedance and output impedance. (13)
16.Sketch the responses of RC high pass filter for Ramp & Pulse input and explain it. (13)
17.Explain the operation of a bistablemultivibrator circuit with neat sketch. (08)
18.Derive the equation for differential mode gain and common mode gain of a differential
amplifier. (13)
19.Explain the working of UJT as a relaxation oscillator with necessary wave forms and
equations. (13)
20.Discuss the various topologies of feedback amplifier. (08)
21.Describe the operation of a typical voltage shunt feedback amplifier. (08)
UNIT-V
FEEDBACK AMPLIFIERS AND OSCILLATORS
PART-A
1. The overall gain of a multistage amplifier is 140.When negative voltage feedback

is applied the gain is reduced to 17.5. Find the fraction of the output that is feedback
to the input. (ND 2018)
Solution. Av = 140, Aνf = 17.5
EDC 19
Let mv be the feedback fraction.

Voltage gain with negative feedback is Aνf = Av / (1 + Av mv )
or 17.5 = 140 / (1 + 140 mν )
or 17.5 + 2450 mν = 140
∴ m ν = (140 - 17.5) / 2450 = 1/ 20
2. In the phase shift oscillator, R1=R2=R3 = 1 M Ω and C1=C2=C3= 68 pF. At what

frequency does the circuit oscillate? (ND 2018)
Solution.
R1 = R2 = R3 = R = 1 MΩ = 106 Ω
C1 = C2 = C3 = C = 68 pF = 68 × 10−12 F
Frequency of oscillations is
f o = 1 / (2 π RC √ 6 )
= 1/ 2 π x 10 6 x 68 10-12 √6 Hz
= 954 Hz
3. Differentiate oscillator and amplifier.

OSCILLATOR AMPLIFIER
 The term oscillation is defined  An amplifier is a device which
as the periodic motion around increases the amplitude of a
a fixed point. certain electronic signal.
 In electronics, the oscillator is  It does not generate any
a generator of the periodic periodic signal.
electronic signal.
 Oscillator acts as a source.  Amplifier acts as a multiplier.
4. What is the Barkhausen criterion for feedback oscillators?

-Aβ = 1
The magnitude of the product of the open loop gain of the amplifier (A) and the feedback
factor β is unity .
5. What are the advantages of a Colpitts oscillator compared to a phase shift oscillator?
The advantages of a Colpitts oscillator compared to a phase shift oscillator
 Good wave purity
 Fine performer at high frequency
 Good stability at high frequency
 Wide operation range from 1 to 60 MHz
6. List the advantages of negative feedback.

 The advantages of negative feedback:
 Less frequency distortion
 Less amplitude distortion
 Less harmonic distortion
 Band width is increased
7. What is the expression for the frequency of oscillations of a Wien-bridge oscillator?

The expression for the frequency of oscillations of a Wien-bridge oscillator is
fo=1/2π(R1R2C1C2)1/2
fo=1/(2πRC)
if R1=R2=R and C1=C2=C
8. Which is the most commonly used feedback arrangement in cascaded amplifier?

Why?
The CE configuration is most commonly used. The reasons are:
EDC 20
 High current gain

 High power
 Moderate input to output ratio
9. Write the effects of negative feedback.

 Negative feedback also has effects of reducing distortion.
 Sensitivity to external changes as well as improving system bandwidth and input
and output impedances
10.What is a clamper?
 The circuit with which the waveform can be shifted, such that, a particular part of it
(say positive or negative peak) is maintained at a specified level.
 It is called a clamping circuit or simply a clamper.
11.Mention the types of feedback amplifier connections.

The types of feedback amplifier connections:
 Voltage series feedback amplifier
 Voltage shunt feedback amplifier
 Current series feedback amplifier
 Current shunt feedback amplifier
12.What are the advantages of crystal oscillator?

The advantages of crystal oscillator:
 Good frequency stability
 Good temperature stability
 Quartz crystal is used which is inexpensive and easily available in nature.
13.Mention any two high frequency LC oscillators.

High frequency LC oscillators:
 Hartley oscillator ,
 Colpitts oscillator
 Clapp oscillator
14.Mention any two audio frequency oscillators.

Two Audio frequency oscillators are :
 RC phase shift oscillator
 Wein bridge oscillator
15.What is schmitt trigger?

 A schmitt trigger is a comparator circuit with hysteresis, implemented by applying
positive feedback to the non-inverting input of a comparator or differential
amplifier.
 It is an active circuit which converts an analog input signal to a digital output
signal.
 The circuit is named as "trigger" because the output retains its value until the input
changes sufficiently to trigger a change.
16.What is a multivibrator?
EDC 21
 Multivibrators are a group of regenerative circuits that are used extensively in

timing applications.
 It is a wave shaping circuit which gives symmetric or asymmetric square output. It
has two states stable or quasi- stable depending on the type of multivibrator.
17.Mention the classification of feedback oscillators.

Classification of feedback oscillators:
 Sinusoidal or Harmonic oscillators
 Non-sinusoidal or relaxation oscillators
 Bistablemultivibrator
18.List the advantages of phase shift oscillator.

The advantages of phase shift oscillator:
 The phase shift oscillator does not require conductance or transformers.
 The upper frequency is limited because the impedance of RC network may become
so small that it loads the amplifier heavily.
19.Write the frequency equation of an astable multivibrator.

The period of each half of the multivibrator is therefore given by t = ln(2)RC.
The total period of oscillation is given by:
T = t1 + t2 = ln (2) R2 C1 + ln(2)R3 C2
where
f is frequency in Hertz R2 and R3 are resistor values in Ω
C1 and C2 are capacitor values in F T is the period in S
20.What is monostable multivibrator?

 Monostable multivibrators or “One-Shot Multivibrators” as they are also called are
used to generate a single output pulse of a specified width, either “HIGH” or “LOW”
when a suitable external trigger signal or pulse T is applied.
 This trigger signal initiates a timing cycle which causes the output of the
monostable to change its state at the start of the timing cycle and will remain in this
second state.
21.What is a bistable multivibrator?

 Bistable multivibrator is one that maintains a given output voltage level unless an
external trigger is applied.
 Application of an external trigger signal causes a change of state, and this output
level is maintained indefinitely until a second trigger is applied.
 Thus, it requires two external triggers.
22.What is an astable multivibrator?
 Astable multivibrator is a free running oscillator having two quasi-stable states.
 Thus, there is an oscillation between these two states and no external signal is
required to produce the change in state.
23.Give any two applications of multivibrators.

The applications of multivibrators:
 Can be used to create a fixed duration timing period with regard to some external
event.
 They are useful as frequency dividers.
EDC 22
24.Write the application of bistable multivibrator.

The applications of bistable multivibrator:
 The bistable multivibrator is used as memory element in shift registers and
counters.
 It is used to generate square waves of symmetrical shape by sending regular
triggering pulses to the input.
25.Write the main drawback of LC oscillators.

The main drawback of LC oscillators:
 The frequency stability is not very good.
 They are too bulky and expensive and cannot be used to generate low frequencies.
26.What are the constituent parts of an oscillator?

The constituent parts of an oscillator:
 An amplifier
 A frequency determining network
 Positive or Regenerative feedback.
27.Define Piezo electric effect.

 When an a.c voltage is applied across a quartz crystal, it vibrates at the frequency of
the applied voltage.
 Alternatively, if a mechanical force is applies to vibrate a quartz crystal, it generates
an a.c voltage.It is called piezo electric effect.
PART-B
1. A 1 mH inductor is available. Find the capacitor values of a Colpitts oscillator so that f=1
MHz and feedback fraction = 0.25. (05)(ND 2018)
2. Explain the working of phase shift oscillator. (08)(ND 2018)
3. An amplifier is required with a voltage gain of 100 which does not vary by more than 1 %.
If it is to use negative feedback with a basic amplifier the voltage gain of which can vary by
20%, find the minimum voltage gain of which can vary by 20%, find the minimum voltage
gain required and the feedback factor. (06)(ND 2018)
4. Discuss the advantages of negative feedback in amplifiers. (07)(ND 2018)
5. Draw the block diagram of a voltage series feedback amplifier and derive the equation for
input impedance, output impedance and the voltage gain. (13)
6. With neat diagram explain Wien-bridge oscillator and derive an expression for frequency
of oscillation. (13)
7. Sketch the circuit diagram of a two stage capacitor coupled BJT amplifier that uses series
voltage negative feedback. Briefly explain how the feedback operates. (13)
8. Design a Wien bridge oscillator circuit to oscillate at a frequency of 20kHz. (13)
9. Describe and explain the operation of crystal oscillator. (13)
10. Explain the operation of Colpitts oscillator with neat circuit diagram. Also derive the
expression for the frequency of oscillation and the condition for maintenance of
oscillation. (13)
11. Draw circuit of CE amplifier with current series feedback and obtain the expression for
feedback ratio, voltage gain, input and output resistances. (13)
12. Determine Rif, Rof, Av and Avf of the following: (13)
voltage shunt feedback amplifier
current shunt feedback amplifier
EDC 23
13. Explain the following with neat diagram: (13)

RC Phase shift oscillator
Hartley oscillator
14. Explain the construction and working of Hartely oscillator with neat diagrams. (13)
15. Explain the operation of collector coupled monostable multivibrator with neat
circuit diagram and draw the various waveforms. (13)
16. Explain the construction and working of BJT RC phase shift oscillator. (08)
17. Calculate the voltage gain, input and output resistances of a voltage series feedback
amplifier having AV = 300, Ri= 1.5kΩ, Ro= 50kΩ and β = 1/15. (08)
18. Draw the circuit of a monostable multivibrator and explain. (13)
19. Distinguish between astable and bistable multivibrators. Mention some applications.(08)
EDC 24

EC8553 Electron Devices and Circuits Question Bank

Uploaded by

Document Information

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

EC8553 Electron Devices and Circuits Question Bank

Uploaded by

Copyright:

Available Formats

EC8351 – Electron Devices & Circuits

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

UNIT-I PN JUNCTION DEVICES

3. State few applications of Zener diode.

4. A silicon diode has a saturation current of 7.5μA at room temperature 300K.

(a)PN Diode: (b)Zener Diode:

6. What is the transition and diffusion capacitance?

7. What is rectifier? List its types.

8. What is meant by dynamic resistance of diode?

9. Distinguish between Zener breakdown and Avalanche breakdown.

10.What is peak inverse voltage?

11.Define knee voltage of a diode.

12.What is meant by doping in a semiconductor?

13.What is diffusion capacitance?

14.Give the diode current equation.

15.What is heat sink? List out the merits of heat sink.

16.Define the transition capacitance of the diode.

18.Why Si is preferred over Ge in the manufacture of semiconductor devices?

19.State any four application of LCD.

20.What is the static resistance of a diode?

21.What are the limitations of LCD?

22.What is the forbidden gap?

24.List the diode parameters.

25.What are the advantages of laser diodes?

26.What are the categories of laser diodes?

27.Define Peak Inverse Voltage (PIV).

3. Define early effect.

5. What is meant by biasing of transistor?

 Biasing in electronics is the method of establishing predetermined voltages or

6. Compare BJT and JFET.

7. Mention the two disadvantages of JFET over BJT.

8. What is pinch-off voltage in FET?

9. Define amplification factor in JFET.

12.Mention some applications of UJT.

13.List the JFET parameters.

14.Define pinch off voltage with respect to JFET

15.State the advantages of FET over the BJT.

16.Mention the applications of FET.

17.Give the drain current equation of JFET.

18.Define transistor action.

19.What is the difference between DIAC and TRIAC?

 DIAC is a two terminal  TRIAC is the three terminal device.

20.Define power transistors.

21.What are the types of breakdown in transistor?

22.Compare N-channel and P-channel JFET.

23.Explain NPN and PNP transistor.

24.Define the different operating regions of transistor.

25.Which is the most commonly used transistor configuration? Why?

26.Define holding current and latching current.

27. What is Q point?

1. For a certain D-MOSFET , IDSS = 10 mA and VGS(off) = - 8 V. Check if it is an n

2. State the phase relationships between input/output currents and phase

3. State Miller’s theorem.

4. Draw the hybrid small signal model of CB configuration.

5. Draw the small signal equivalent circuit of a CS JFET.

6. What is the need of coupling capacitors in amplifier design?

7. Define the four h-parameters.

8. Define α and β of a transistor.

10.State the advantages of optocoupler.

11.What is thermal runaway?

12.Why FET is called unipolar device?

13.List the advantages of CC configuration.

14.Which of the BJT configuration is suitable for impedance matching applications?

16.What is reverse saturation current?