BPW24R

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Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): Ø 4.7
• Radiant sensitive area (in mm2): 0.78
• High photo sensitivity
• High radiant sensitivity

948642
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity:  = ± 12°
• Hermetically sealed package
DESCRIPTION • Cathode connected to package
BPW24R is a high sensitive silicon planar photodiode in a • Central chip alignment
standard TO-18 hermetically sealed metal case with a glass • Compliant to RoHS Directive 2002/95/EC and in
lens. accordance with WEEE 2002/96/EC
A precise alignment of the chip gives a good coincidence of
mechanical and optical axes. The device features a low APPLICATIONS
capacitance and high speed even at low supply voltages. • High speed photo detector

PRODUCT SUMMARY
COMPONENT Ira ( A)  (deg) 0.1 (nm)
BPW24R 60 ± 12 400 to 1100
Note
• Test condition see table “Basic Characteristics”

ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW24R Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18
Note
• MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR 60 V
Power dissipation Tamb  25 °C PV 210 mW
Junction temperature Tj 125 °C
Operating temperature range Tamb - 40 to + 125 °C
Storage temperature range Tstg - 40 to + 125 °C
Soldering temperature t5s Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 350 K/W

Rev. 1.6, 11-Aug-11 1 Document Number: 81520

For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 BPW24R
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Vishay Semiconductors

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 200 V
Reverse dark current VR = 50 V, E = 0 Iro 2 10 nA
VR = 0 V, f = 1 MHz, E = 0 CD 11 pF
Diode capacitance VR = 5 V, f = 1 MHz, E = 0 CD 3.8 pF
VR = 20 V, f = 1 MHz, E = 0 CD 2.5 pF
Open circuit voltage Ee = 1 mW/cm2,  = 950 nm Vo 450 mV
Temperature coefficient of Vo Ee = 1 mW/cm2,  = 950 nm TKVo -2 mV/K
Short circuit current Ee = 1 mW/cm2,  = 950 nm Ik 55 μA
Temperature coefficient of Ik EA = 1 klx TKIk 0.1 %/K
Ee = 1 mW/cm2,  = 950 nm,
Reverse light current Ira 45 60 μA
VR = 20 V
VR = 5 V,  = 870 nm s() 0.60 A/W
Absolute Spectral Sensitivity
VR = 5 V,  = 900 nm s() 0.55 A/W
Angle of half sensitivity  ± 12 deg
Wavelength of peak sensitivity p 900 nm
Range of spectral bandwidth 0.1 400 1100 nm
Rise time VR = 20 V, RL = 50 ,  = 820 nm tr 7 ns
Fall time VR = 20 V, RL = 50 ,  = 820 nm tf 7 ns

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

10 4 1.4
I ra rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)

V R = 50 V
10 3 1.2 VR = 5 V
λ = 950 nm

10 2 1.0

10 1 0.8

10 0 0.6
20 40 60 80 100 120 0 20 40 60 80 100
94 8454 Tamb - Ambient Temperature (°C) 94 8409 Tamb - Ambient Temperature (°C)

Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

Rev. 1.6, 11-Aug-11 2 Document Number: 81520

For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 BPW24R
www.vishay.com
Vishay Semiconductors

1000

S (λ)rel - Relative Spectral Sensitivity

1.0
Ira - Reverse Light Current (µA)

100
0.8

0.6
10

V R = 10 V 0.4
1 λ = 950 nm
0.2

0.1 0
0.01 0.1 1 10 350 550 750 950 1150
94 8455 Ee - Irradiance (mW/cm2) 94 8458 λ - Wavelength (nm)

Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Spectral Sensitivity vs. Wavelength

0° 10° 20°
100
1 mW/cm2 30°
Ira - Reverse Light Current (µA)

0.5 mW/cm2
Srel - Relative Sensitivity

ϕ - Angular Displacement
λ = 950 nm 40°
0.2 mW/cm2 1.0
10 0.9
0.1 mW/cm2 50°

0.8 60°
0.05 mW/cm2
70°
0.7
0.02 mW/cm2 80°
1
0.1 1 10 100 0.6 0.4 0.2 0
94 8456 VR - Reverse Voltage (V) 94 8459

Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement

12
CD - Diode Capacitance (pF)

10

8 E=0
f = 1 MHz

0
0.1 1 10 100
94 8439 VR - Reverse Voltage (V)

Fig. 5 - Diode Capacitance vs. Reverse Voltage

Rev. 1.6, 11-Aug-11 3 Document Number: 81520

For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 BPW24R
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters

A C

± 0.15
2.54 nom.

5.5
+ 0.02
Ø 4.69 - 0.07

± 0.25
6.15
Chip position
(2.5)

± 0.7
13.2

+0.02
Ø 0.45 -0.05

technical drawings
according to DIN
specifications
± 0.05

Lens
4

Drawing-No.: 6.503-5022.02-4
Issue: 1; 24.08.98
14487

Rev. 1.6, 11-Aug-11 4 Document Number: 81520

For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12 1 Document Number: 91000