TEMT7100X01

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Vishay Semiconductors
Silicon Phototransistor in 0805 Package
FEATURES
• Package type: surface-mount
• Package form: 0805
• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
• AEC-Q101 qualified
• High photo sensitivity
• Daylight blocking filter matches with 830 nm
to 950 nm IR emitters
• Angle of half sensitivity: ϕ = ± 60°
• Package matched with IR emitter series
20043-1 VSMB1940X01
• Floor life: 168 h, MSL 3, according to J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
DESCRIPTION please see www.vishay.com/doc?99912
TEMT7100X01 is a silicon NPN epitaxial planar
phototransistor with daylight blocking filter in a miniature, APPLICATIONS
black 0805 package for surface mounting. Filter bandwidth • Detector in automotive applications
is matched with 830 nm to 950 nm IR emitters. • Photo interrupters
• Miniature switches
• Counters
• Encoders
• Position sensors

PRODUCT SUMMARY
Ica (μA)
COMPONENT ϕ (°) λ0.5 (nm)
at Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V
TEMT7100X01 225 to 675 ± 60 750 to 1010
Note
• Test condition see table “Basic Characteristics”

ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TEMT7100X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805
Note
• MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage VCEO 20 V
Emitter collector voltage VECO 7 V
Collector current IC 20 mA
Power power dissipation Tamb ≤ 55 °C PV 100 mW
Junction temperature Tj 100 °C
Operating temperature range Tamb -40 to +100 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature According to reflow profile Fig. 8 Tsd 260 °C
Thermal resistance junction-to-ambient According to J-STD-051 RthJA 270 K/W

Rev. 1.3, 30-Jul-2020 1 Document Number: 81770

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120
PV - Power Dissipation (mW)

100

80

60
RthJA = 270 K/W
40

20

0
0 10 20 30 40 50 60 70 80 90 100
21331-1 Tamb - Ambient Temperature (°C)

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage IC = 0.1 mA VCEO 20 - - V
Collector dark current VCE = 5 V, E = 0 ICEO - 1 100 nA
Collector emitter capacitance VCE = 0 V, f = 1 MHz, E = 0 CCEO - 25 - pF
Ee = 1 mW/cm2, λ = 950 nm,
Collector light current ICA 225 450 675 μA
VCE = 5 V
Angle of half sensitivity ϕ - ± 60 - °
Wavelength of peak sensitivity λp - 870 - nm
Range of spectral bandwidth λ0.5 - 750 to 1010 - nm
Collector emitter saturation voltage IC = 0.05 mA VCEsat - - 0.4 V
Ee = 1 mW/cm2, λ = 950 nm,
Temperature coefficient of Ica TkIca - 1.1 - %/K
VCE = 5 V

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

10 000 10
Ica - Collector Light Current (mA)
ICE0 - Collector Dark Current (nA)

IF = 0

1000 1
VCE = 70 V
VCE = 25 V

100 VCE = 5 V 0.1

VCE = 5 V
10 0.01

1 0.001
0 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10
20594 21551-1 Ee - Irradiance (mW/cm²)
Tamb - Ambient Temperature (°C)

Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Collector Light Current vs. Irradiance

Rev. 1.3, 30-Jul-2020 2 Document Number: 81770

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 TEMT7100X01
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Vishay Semiconductors

Axis0°Title 10° 20°

100 10000
30°
90

Ie, rel. - Relative Radiant Intensity

tr / tf - Rise / Fall Time (µs)

80

φ - Angular Displacement
70 RL = 100 Ω
1000
40°
60 1.0

2nd line
2nd line
50 0.9
50°
40 0.8
tf 100
60°
30
tr
20 0.7 70°

10 80°
10
0
0.6 0.4 0.2 0
0 250 500 750 1000 1250 1500 1750 2000
94 8013 1st line
20599 IC - Collector Current (µA)

Fig. 4 - Rise/Fall Time vs. Collector Current Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement

1.2 2.0
S(λ)rel - Relative Spectral Sensitivity

Ica rel - Relative Collector Current

1.0 1.8
VCE = 5 V,
1.6 Ee = 1 mW/cm2,
0.8  = 950 nm
1.4
0.6
1.2

0.4
1.0

0.2 0.8

0 0.6
600 700 800 900 1000 1100 0 20 40 60 80 100
948239-1 Tamb - Ambient Temperature (°C)
21552 λ - Wavelength (nm)

Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Fig. 7 - Relative Collector Current vs. Ambient Temperature

REFLOW SOLDER PROFILE DRYPACK

Axis Title Devices are packed in moisture barrier bags (MBB) to
300 10000 prevent the products from moisture absorption during
Max. 260 °C transportation and storage. Each bag contains a desiccant.
250 255 °C
245 °C
240 °C
FLOOR LIFE
217 °C
Temperature (°C)

200 1000 Floor life (time between soldering and removing from MBB)
Max. 30 s must not exceed the time indicated on MBB label:
2nd line
2nd line

1st line

150 Floor life: 168 h

Max. 120 s Max. 100 s Conditions: Tamb < 30 °C, RH < 60 %
100 100 Moisture sensitivity level 3, acc. to J-STD-020.
Max. ramp down 6 °C/s

50 Max. ramp up 3 °C/s DRYING

In case of moisture absorption devices should be baked
0 10 before soldering. Conditions see J-STD-033D or label.
0 50 100 150 200 250 300
Devices taped on reel dry using recommended conditions
19841 Time (s)
192 h at 40 °C (+ 5 °C), RH < 5 %.
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020

Rev. 1.3, 30-Jul-2020 3 Document Number: 81770

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 TEMT7100X01
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PACKAGE DIMENSIONS in millimeters

19757

Rev. 1.3, 30-Jul-2020 4 Document Number: 81770

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 TEMT7100X01
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Vishay Semiconductors
BLISTER TAPE DIMENSIONS in millimeters

Quantity per reel: 3000 pcs

20690

Rev. 1.3, 30-Jul-2020 5 Document Number: 81770

For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 TEMT7100X01
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Vishay Semiconductors
REEL DIMENSIONS in millimeters

8.4 +2.5

8.4 +0.15

Ø 177.8 max.
Ø 55 min.
Z

Form of the leave open

of the wheel is supplier specific.
14.4 max.
Z 2:1
1.5 min.

Ø 20.2 min.
+ 0.5
Ø 13 - 0.2

Drawing-No.: 9.800-5096.01-4
technical drawings
Issue: 2; 26.04.10 according to DIN
specifications
20875

Rev. 1.3, 30-Jul-2020 6 Document Number: 81770

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2024 1 Document Number: 91000

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000