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APM2556NU: Pin Description Features
APM2556NU: Pin Description Features
• 25V/60A,
RDS(ON)=4.5mΩ (typ.) @ VGS=10V
RDS(ON)=7.5mΩ (typ.) @ VGS=4.5V G D
Applications
G
• Power Management in Desktop Computer or
DC/DC Converters
S
N-Channel MOSFET
Package Code
APM2556N U : TO-252
Assembly Material Operating Junction Temperature Range
C : -55 to 150 ° C
Handling Code Handling Code
Temperature Range TR : Tape & Reel
Assembly Material
Package Code L : Lead Free Device
G : Halogen and Lead Free Device
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
APM2556NU
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 25 V
VDS=20V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.3 1.8 2.5 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V ±100 nA
VGS=10V, IDS=40A 4.5 5.7
RDS(ON) a Drain-Source On-state Resistance mΩ
VGS=4.5V, IDS=20A 7.5 10
Diode Characteristics
VSDa Diode Forward Voltage ISD=40A, VGS=0V 0.7 1.1 V
trr Reverse Recovery Time 28 ns
IDS=40A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge 14 nC
APM2556NU
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
b
Gate Charge Characteristics
Qg Total Gate Charge 25 35
VDS=15V, VGS=4.5V,
Qgs Gate-Source Charge 6 nC
IDS=40A
Qgd Gate-Drain Charge 16
b
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V, F=1MHz 0.5 1.3 2.6 Ω
Ciss Input Capacitance 2230 2900
VGS=0V,
Coss Output Capacitance VDS=15V, 485 pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance 435
td(ON) Turn-on Delay Time 16 30
tr Turn-on Rise Time VDD=15V, RL=15Ω, 18 33
IDS=1A, VGEN=10V, ns
td(OFF) Turn-off Delay Time RG=6Ω 58 105
tf Turn-off Fall Time 32 59
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Typical Characteristics
60
50
50
40
40
30
30
20
20
10
10
o o
TC=25 C TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160
1 Duty = 0.5
Normalized Effective Transient
100
0.2
it
ID - Drain Current (A)
Lim
1ms
0.1
n)
s(o
10ms
Rd
0.05
0.1
10 100ms 0.02
1s 0.01
DC
0.01 Single Pulse
1
2
Mounted on 1in pad
O o
TC=25 C RθJA :50 C/W
0.1 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 100
VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)
9
100
8
4V
80 7
6
60 VGS=10V
5
3.5V
40 4
3V 3
20
2
0 1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 160
14
1.2
12
10 1.0
8 0.8
6
0.6
4
0.4
2
0 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150
1.6 o
Tj=150 C
1.4
0.8
0.6
0.4
0.2 1
o
RON@Tj=25 C: 4.5mΩ
0.0 0.5
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
8
3000
7
C - Capacitance (pF)
2500
6
Ciss
2000 5
1500 4
3
1000
2
Crss Coss
500
1
0 0
0 5 10 15 20 25 0 10 20 30 40 50
VDS
L VDSX(SUS)
tp
DUT VDS
IAS
RG
VDD
VDD
tp IL EAS
0.01Ω
tAV
VDS
RD
VDS
DUT
90%
VGS
RG
VDD
10%
tp
VGS
td(on) tr td(off) tf
Package Information
TO-252
E A
b3 c2 E1
L3
D1
D
H
L4
c
b e
SEE VIEW A
0
VIEW A
S TO-252
Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094
A1 0.13 0.005
b 0.50 0.89 0.020 0.035
b3 4.95 5.46 0.195 0.215
c 0.46 0.61 0.018 0.024
c2 0.46 0.89 0.018 0.035
D 5.33 6.22 0.210 0.245
D1 4.57 6.00 0.180 0.236
E 6.35 6.73 0.250 0.265
E1 3.81 6.00 0.150 0.236
e 2.29 BSC 0.090 BSC
H 9.40 10.41 0.370 0.410
L 0.90 1.78 0.035 0.070
L3 0.89 2.03 0.035 0.080
L4 1.02 0.040
0 0° 8° 0° 8°
E1
F
W
B0
K0 A0 OD1 B A
B
SECTION A-A
T
SECTION B-B
d
H
A
T1
Application A H T1 C d D W E1 F
330.0± 16.4+2.00 13.0+0.50
2.00 50 MIN. -0.00 -0.20 1.5 MIN. 20.2 MIN. 16.0±0.30 1.75±0.10 7.50±0.05
TO-252 P0 P1 P2 D0 D1 T A0 B0 K0
4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 1.5 MIN. 0.6+0.00 6.80±0.20 10.40± 2.50±0.20
-0.00 -0.40 0.20
(mm)
TP tp
Critical Zone
TL to TP
Ramp-up
TL
Temperature
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
t 25 °C to Peak
25
Time
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindian City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838