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Abstract— We present a vertical gate-all-around Si nanowire smaller natural length λ can be reached, and the wrapped
(SiNW) metal–oxide–semiconductor field-effect transistor with gate design provides optimal electrostatic control [3]–[7].
high-κ dielectric and TiN metal gate. The process flow is fully Therefore, vertical-channel nanowire gate-all-around metal–
compatible with CMOS technologies. SiNWs are fabricated by
deep Si reactive ion etching, gate-stack is formed by atomic layer oxide–semiconductor field-effect transistors (MOSFETs),
deposition, and metal salicide is utilized as drain contact. The fab- which are fabricated about a cylindrical pillar of Si, benefit
ricated p-type gate-all-around SiNW metal–oxide–semiconductor from both reduced short-channel effects and improved SS, as
field-effect transistors that have a gate length of 320 nm exhibit well as potentially higher packing densities. Extensive simu-
excellent characteristics with ION /IOFF > 104 , subthreshold lation and modeling studies have been done on 1-D nanowire
slope of 87 mV/decade, and 25 mV/V of drain-induced barrier
lowering. Low-temperature characteristics are also presented. FETs [8]. Simulation shows that the low DIBL and SS
The demonstrated devices have potential applications in novel can be maintained if scaling laws are followed [9], [10],
low-power logic circuits and as selection transistors for 4F 2 e.g., simulation based on Boltzmann transport equation
cross-point memory cells. indicates that silicon body diameter should be smaller than
Index Terms— CMOS technology, deep Si etching, gate-all- roughly 2/3 of the channel length to maintain an SS below
around, high-κ/metal gate, nanowire, salicide. 80 mV/decade [11]. Modeling of mobilities in silicon
nanowire (SiNW) and simulation of nanowire FET with
I. I NTRODUCTION high-κ dielectrics have also been reported [12], [13].
Vapor–liquid–solid nanowire growth is one well-known
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ZHAI et al.: HIGH-PERFORMANCE VERTICAL GATE-ALL-AROUND SiNW FET 3897
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3898 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 11, NOVEMBER 2014
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ZHAI et al.: HIGH-PERFORMANCE VERTICAL GATE-ALL-AROUND SiNW FET 3899
Fig. 8. Illustration of 3-D architecture that has an NVM plane above the
logic plane.
Fig. 6. Transconductance of SiNW MOSFET measured at VDS = −0.2 V.
(from 10−11 to 10−13 A). The threshold voltage magnitude
|Vth | increases ∼0.24 V at 77 K.
We briefly describe some potential applications. These gate-
all-around nanowire MOSFETs can be utilized as selection
transistors for 4F 2 cross-point memory cells, where F is the
minimum lithographic dimension. The memory cells lie above
the selection transistors at the intersections of word lines and
bit lines. Another novel way of using these transistors could
be in vertical Flash nonvolatile memory (NVM) cells.
A novel 3-D architecture can also be envisioned with an
NVM plane using such SiNWs above a CMOS logic plane
for low-power computing. One could imagine storing the logic
values in registers or static random access cache memories in
the logic level in the NVM memory cells above, and shutting
off the logic blocks if they are not performing computing to
Fig. 7. Low-temperature transfer characteristics compared with room- conserve power. Subsequently, as needed, the logic values can
temperature results and output characteristics (inset).
be restored from the NVM plane to the logic plane. What
often makes such ideas impractical is the necessity to have
and plotted in Fig. 6 at VDS = −0.2 V. The maximum gm is very high alignment accuracy between fully random access
achieved at VGS = −0.56 V. The carrier mobility μ can be memory cells, with the underlying logic devices. We propose
approximately estimated by an innovative variation of this theme, by envisioning an ultra-
dense array of memory cells, which would have a much tighter
gm L pitch than the underlying logic nodes that have to be stored.
μ= (1)
W Cox VDS Metal-filled via holes would project above the logic plane,
where L is the channel length and W is the channel width. providing access to nodes that would be necessary for instantly
Cox is the gate oxide capacitance. The extracted hole mobility restoring the logic states in the underlying subcircuit. These
is 2.2 cm2 /V · s, which we believe is lower than the true value logic nodes could have a somewhat random and sparse spatial
because we cannot correct for source/drain series resistance in arrangement, depending on the subcircuit. If the memory cell
our test structure. We believe we have high contact resistance density above is much higher than the density of the required
at the top of the nanowire to drain electrode, as the nanowire logic nodes, one could guarantee that at least one memory
top was exposed to a sequence of etching processes. It should cell would be in contact with each logic node. The second
be improved by further optimization of the process flow. innovation is to recognize that if one simply needs to store the
The low-temperature performance of the fabricated devices logic state locally in a nonvolatile fashion in the immediate
was also characterized at 77 K. The sample was cooled vicinity of the logic node, it is not necessary to have truly
down by liquid nitrogen (LN2 ), and the transfer character- random access to each of these memory nodes. Fig. 8 shows
istic was measured. Fig. 7 shows the comparison of the the design of such a 3-D architecture with NVM Flash cells
low-temperature and room-temperature transfer characteristics made in vertical SiNW MOSFETs. For such a scheme, all the
with VDS = −0.2 V. Compared with the room-temperature NVM memory cells would be connected in parallel, with a
performance, steeper subthreshold slope, lower drive current, global word line and a global bit line (the universal source
and larger threshold voltage magnitude |Vth | are observed contact in Fig. 8).
at 77 K. The extracted SS at 77 K is 65 mV/decade, compared
with 87 mV/decade that was extracted at room tempera- IV. C ONCLUSION
ture. The ON-state drive current at VGS = −2 V reduces We have presented the process integration and device
from 2.58 μA at room temperature to 0.73 μA at 77 K, characterization of a gate-all-around SiNW-based p-type
and the OFF-state current has a reduction of two magnitude MOSFET. Nanowires are patterned by e-beam lithography
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3900 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 11, NOVEMBER 2014
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