East West University

Post Lab Report for EEE 102

Course No: EEE 102
Experiment No: 03
Name of the Experiment: Parameters and I-V characteristics measurement of an N-
channel MOSFET

Prepared by:
Student Name: MD. Abdul Gaffar
Student ID: 2015-3-80-003
Date of performance: 24.10.2016
Date of submission: 31.10.2016
Submitted to: Mariam B salim
Group No: 04
Group ID: 2015-3-80-003
2015-2-80-003
2015-2-80-006
OBJECTIVE: By this experiment is well measure the parameters, namely the threshold voltage,
Vt and the process trans conductance Kn(W/L), and the output (ID vs VDS) of an N-channel
enhancement MOSFET .

CIRCUIT DIAGRAM:

Fig.02: Measurement of Vt and Kn (W/L) of an a NMOS

Fig.03: Circuit to measure I-V characteristics of an N-channel MOSFET

EXPERIMENTAL DATASJHEET:

Measurement of Vt and kn (W/L)

R1 0.95 KΩ
R2 3.05 MΩ
VGS 5.13V
Vt 1.54V
ID 5.4 mA
Kn (W/L) mA
0.837[ 2 ]
V

I-V MEASUREMENT:

VGG= (Vt+2V) =(1.54+2) V=3.54V:

VDD (V) VDS (V) VRD (V) V RD

ID = (mA)
RD
0 0 0.03 0.031
1 0.18 0.79 0.83
2 0.42 1.58 1.66
3 0.76 2.31 2.43
4 1.29 2.71 2.85
5 2.10 2.84 2.98
6 2.98 2.91 3.06
6.5 3.44 2.94 3.09
7 3.9 2.96 3.11
7.5 4.49 3.0 3.14
8 4.98 3.02 3.17
8.5 5.41 3.04 3.2
9 5.89 3.06 3.22
9.5 6.37 3.09 3.14
10 6.77 3.10 3.26

VGG= (Vt+3V) =(1.54+2) V=4.54V:

VDD (V) VDS (V) VRD (V) V RD

ID = (mA)
RD
0 0 0.03 0.031
1 0.12 0.77 0.81
2 0.28 1.62 1.70
3 0.46 2.46 2.58
4 0.64 3.27 3.54
 5 0.89 4.08 4.29
6 1.17 4.77 5.02
7 1.64 5.36 5.64
8 2.33 5.63 5.92
9 3.16 5.77 6.07
10 4.09 5.87 6.17
11 5.07 5.99 6.30
12 5.95 6.04 6.35
12.5 6.41 6.07 6.38
13 6.93 6.11 6.43

ANSWER TO THE POST LAB REPORT:

ANSWER TO THE QUESTION NO 1:

In step 3 of fig. 02 to find process Trans conductance we use have the current expression in
saturation. In saturation current is constant and from the equation of process trans conductance,
2I
Kn (W/L) = D , we see that there changes of I D change process trans conductance. we see that
¿¿¿
gate and drain are in short circuit. We know that in a NMOS if gate and drain are in short then
the MOSFET must operate in saturation.That’s why we use the current expression in saturation.

ANSWER TO THE QUESTION NO 2:

 I-DVS VDS
4.5

4 X: 5.85 X: 6.84
X: 1.31 X: 4.85
X: 3.91 Y: 4.141 Y: 4.172
Y: 3.697 X: 3.03 Y: 4.101
Y: 4.05
Y: 4

3.5
X: 0.89
Y: 3.141

X: 0.605
Y: 2.414
2.5
I-D

X: 6.08 X: 7.07
X: 4.07 X: 5.08
X: 1.726 X: 2.67 Y: 1.929 Y: 1.959
X: 1.1 Y: 1.889 Y: 1.909
2 Y: 1.831 Y: 1.848
Y: 1.772

1.5

0.5

0
0 1 2 3 4 5 6 7 8
VDS

ANSWER TO THE QUESTION NO 3:

In graph here the line in in saturation region is not straight because the value of I D is not constant
in saturation region. In calculated graph the ID is in saturation region and the line in saturation
region is straight.

In theoretical when DS = V V
OV the channel is pinched-off and VDS has no effect on current
in saturation region . But in real because of channel length modulation pinch-off point move
slightly away from drain and reduce effective channel length and the line in saturation region
creates a slope.

ANSWER TO THE QUESTION NO 4:

1
Here ,Slope = r o

Y 2−Y 1
=
X 2− X 1

4.05−4
=
3.91−3.03

0.05
=
0.88
 = 0.0568 mA/V

So,
r o = 17.605 KΩ

1 Kn
Again, r o = λ
( )[
2
V GS −V t ]
2

1 Kn
⇒ λ = ro ( )[
2
V GS −V t ]
2

1
⇒ λ = V A = 49.45V = Early voltage

ANSWER TO THE QUESTION NO 5:

30mA

20mA

10mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
ID(M1)
V_VDD

CONCLUSION: By doing this experiment we learn how to find the VD and VR in parameters and
I-V characteristics of an N-channel MOSFET. In this experiment we learn about the T .We
measure the parameters threshold voltage Vt and the process trans conductance Kn (W/L).This
experiment we knew how determine and plot the I-V characteristics and modeling of of an N-
channel MOSFET. How to calculate and compare the all data.