2N2914

SEME 2N2916

LAB 2N2918

MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.335)
9.40 (0.370)
7.75 (0.305)
DUAL NPN
8.51 (0.335)
PLANAR TRANSISTORS IN
TO77 PACKAGE
6.10 (0.240)
6.60 (0.260)

1.02
(0.040)
Max.
12.7 (0.500)
Min.

0.41 (0.016)
0.53 (0.021)

5.08
(0.200)
2.54
(0.100)

2.54 4
(0.100) 5
0.74 (0.029)
3 6 1.14 (0.045)
2
1

45˚ 0.71 (0.028)

0.86 (0.034)

TO–77 PACKAGE
PIN 1 – Collector 1 PIN 4 – Emitter 2
PIN 2 – Base 1 PIN 5 – Base 2
PIN 3 – Emitter 1 PIN 6 – Collector 2
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25°C unless otherwise stated) EACH SIDE TOTAL DEVICE
VCBO Collector – Base Voltage 45V
VCEO Collector – Emitter Voltage 1 45V
VEBO Emitter – Base Voltage 6V
IC Continuous Collector Current 30
PD Total Device Dissipation TAMB = 25°C 300mW 500mW
Derate above 25°C 1.72mW / °C 2.86W / °C
PD Total Device Dissipation TC = 25°C 750mW 1.5W
Derate above 25°C 4.3mW / °C 8.6mW / °C
TSTG Storage Temperature Range –65 to 200°C
TL Lead temperature (Soldering, 10 sec.) 300°C

NOTES
1. Base – Emitter Diode Open Circuited.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 9/95
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
 2N2914
SEME 2N2916

LAB 2N2918

ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)

Parameter Test Conditions 1 Min. Typ. Max. Unit
INDIVIDUAL TRANSISTOR CHARACTERISTICS
V(BR)CBO Collector – Base Breakdown Voltage IC = 10mA IE = 0 45
V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 10mA IB = 0 45 V
V(BR)EBO Emitter – Base Breakdown Voltage IE = 10mA IC = 0 6
VCB = 45V IE = 0 10 nA
ICBO Collector Cut-off Current
TA = 150°C 10 mA
ICEO Collector Cut-off Current VCE = 5V IB = 0 2
nA
IEBO Emitter Cut-off Current VEB = 5V IC = 0 2
VCE = 5V IC = 10mA 150 600
TA = –55°C 30
hFE DC Current Gain —
VCE = 5V IC = 100mA 225
VCE = 5V IC = 1mA 300
VBE Base – Emitter Voltage VCE = 5V IC = 100mA 0.70
V
VCE(sat) Collector – Emitter Saturation Voltage IB = 100mA IC = 1mA 0.35
hib Small Signal Common – Base VCB = 5V IC = 1mA
25 32 W
Input Impedance f = 1kHz
hob Small Signal Common – Base VCB = 5V IC = 1mA
1 mmho
Output Admittance f = 1kHz
|hfe| Small Signal Common – Base VCE = 5V IC = 500mA
3 —
Current Gain f = 20MHz
Cobo Common – Base Open Circuit VCB = 5V IE = 0
6 pF
Output Capacitance f = 140kHz to 1MHz
* Pulse Test: tp = 300ms , d £ 1%.

2N2916 2N2918
Parameter Test Conditions Min. Typ. Max. Min. Typ. Max. Unit
TRANSISTOR MATCHING CHARACTERISTICS
hFE1 Static Forward Current VCE = 5V IC = 100mA
0.9 1 0.8 1 —
hFE2 Gain Balance Ratio See Note 2.
Base – Emitter Voltage VCE = 5V IC = 100mA 3 5
|VBE1 – VBE2| mV
Differential VCE = 5V IC = 10mA to 1mA 5 10
|D(VBE1 – VBE2)DTA| VCE = 5V IC = 100mA
0.8 1.6
Base – Emitter Voltage TA1 = 25°C TA2 = –55°C
mV
Differential Change With VCE = 5V IC = 100mA
1 2
Temperature TA1 = 25°C TA2 = 125°C
NOTES
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as hFE1.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 9/95
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk