® DB3 DB4 SMDB3

DIAC

FEATURES
■ VBO : 32V and 40V
■ LOW BREAKOVER CURRENT

DO-35
DESCRIPTION (DB3 and DB4)
Functioning as a trigger diode with a fixed voltage
reference, the DB3/DB4 series can be used in
conjunction with triacs for simplified gate control
circuits or as a starting element in fluorenscent 2
lamp ballasts. 3

A new surface mount version is now available in

1
SOT-23 package, providing reduced space and
compatibility with automatic pick and place
equipment. SOT-23
(SMDB3)*
Pin 1 and 3 must be shorted
together

ABSOLUTE MAXIMUM RATINGS (limiting values)

Symbol Parameter Value Unit

ITRM Repetitive peak on-state current SMDB3 1.00 A

tp = 20 µs F= 120 Hz
DB3 / DB4 2.00

Tstg Storage temperature range - 40 to + 125 °C

Tj Operating junction temperature range

Note: * SMDB3 indicated as Preliminary spec as product is still in development stage.

October 2001 - Ed: 2B 1/5

DB3 DB4 SMDB3

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)

Symbol Parameter Test Conditions SMDB3 DB3 DB4 Unit

VBO Breakover voltage * C = 22nF ** MIN. 28 28 35 V

TYP. 32 32 40
MAX. 36 36 45
I VBO1 - VBO2 I Breakover voltage C = 22nF ** MAX. 3 V
symmetry
∆V Dynamic breakover VBO and VF at 10mA MIN. 10 5 V
voltage *
VO Output voltage * see diagram 2 MIN. 10 5 V
(R=20Ω)
IBO Breakover current * C = 22nF ** MAX. 10 50 µA
tr Rise time * see diagram 3 MAX. 0.50 2 µs
IR Leakage current * VR = 0.5 VBO max MAX. 1 10 µA
IP Peak current * see diagram 2 (Gate) MIN. 1 0.30 A
* Applicable to both forward and reverse directions.
** Connected in parallel to the device.

PRODUCT SELECTOR

Part Number VBO Package

SMDB3 28 - 36 SOT-23

DB3 28 - 36 DO-35

DB4 35 - 45 DO-35

ORDERING INFORMATION

SM DB 3
Surface Breakover voltage
Mount 3: VBO typ = 32V
Version 4: VBO typ = 40V

Diac Series

2/5
 DB3 DB4 SMDB3

OTHER INFORMATION

Part Number Marking Weight Base Quantity Packing Mode

SMDB3 DB3 0.01 g 3000 Tape & Reel

DB3 DB3 (Blue Body Coat) 0.15 g 5000 Tape & Reel

DB4 DB4 (Blue Body Coat) 0.15 g 5000 Tape & Reel

Diagram 1: Voltage - current characteristic curve. Diagram 2: Test circuit.

10 kΩ 500 kΩ D.U.T Rs=0

220 V I
+ IF C=0.1µF P
50 Hz
Vo
10mA
T410

R=20 Ω

IBO
-V IB + V Diagram 3: Rise time measurement.
0,5 VBO
V
lp
VF
90 %
VBO

- IF

10 %
tr

3/5
 DB3 DB4 SMDB3
Fig. 1: Relative variation of VBO versus junction Fig. 2: Repetitive peak pulse current versus pulse
temperature (typical values). duration (maximum values).

VBO [Tj] / VBO [Tj=25°C] ITRM(A)

1.10 20.0
F=120Hz
Tj initial=25°C
DB3/DB4 10.0
1.05
DB3/DB4

1.00

0.95 SMDB3
1.0 SMDB3

0.90

0.85
Tj(°C) tp(µs)
0.80 0.1
25 50 75 100 125 1 10 100

Fig. 3: Time duration while current pulse is higher

50mA versus C and Rs (typical values).

tp(µs)
40
Tj=25°C 68Ω
35
30 47Ω

25 33Ω

20
15
22Ω
10
10Ω
5
0Ω C(nF)
0
10 20 50 100 200 500

PACKAGE MECHANICAL DATA (in millimeters)

DO-35

REF. DIMENSIONS

C A C / B
O
Millimeters Inches

Min. Max. Min. Max.

A 3.05 4.50 0.120 0.177

B 1.53 2.00 0.060 0.079

/D
O /D
O
C 28.00 1.102

D 0.458 0.558 0.018 0.022

4/5
 DB3 DB4 SMDB3

PACKAGE MECHANICAL DATA (in millimeters)

SOT-23

E A REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
e
A 0.89 1.4 0.035 0.055
e1 D
B
A1 0 0.1 0 0.004
B 0.3 0.51 0.012 0.02
S
c 0.085 0.18 0.003 0.007
A1
D 2.75 3.04 0.108 0.12
e 0.85 1.05 0.033 0.041
L
e1 1.7 2.1 0.067 0.083
H E 1.2 1.6 0.047 0.063
H 2.1 2.75 0.083 0.108
L 0.6 typ. 0.024 typ.
c
S 0.35 0.65 0.014 0.026

FOOTPRINT

0.9 0.9
0.035 0.035
0.043
1.1

1.9
0.075
2.35
0.92

mm
1.45
inch
0.037
0.043
1.1

0.9
0.035

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com

5/5