Professional Documents
Culture Documents
DATA SHEET
M3D176
BB119
Variable capacitance diode
Product specification 1996 May 03
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
Philips Semiconductors Product specification
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package k
handbook, halfpage a
LIMITING VALUES
DESCRIPTION
In accordance with the Absolute Maximum Rating System (IEC 134).
The BB119 is a variable capacitance
diode, fabricated in planar SYMBOL PARAMETER MIN. MAX. UNIT
technology, and encapsulated in the VR continuous reverse voltage − 15 V
hermetically sealed leaded glass IF continuous forward current − 200 mA
SOD27 (DO-35) package.
Tstg storage temperature −55 +150 °C
Tj operating junction temperature − 150 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
Note
1. VR = 4 V.
1996 May 03 2
Philips Semiconductors Product specification
GRAPHICAL DATA
MBH194
40
handbook, full pagewidth
Cd
(pF)
30
20
10
0
10−1 1 VR (V) 10
f = 1 MHz.
MBH193 MLC815
4
10halfpage 10 3
handbook, halfpage
handbook,
IR
(nA) TC d
(K−1)
103
10 4
102
10 10 5
0 50 100 Tj (oC) 150 10 1 1 10 102
VR (V)
1996 May 03 3
Philips Semiconductors Product specification
PACKAGE OUTLINE
Dimensions in mm.
DEFINITIONS
1996 May 03 4