CTT49

Thyristor-Thyristor Modules

Dimensions in mm (1mm=0.0394")
Type VRSM VRRM
VDSM VDRM
V V
CTT49GK08 900 800
CTT49GK12 1300 1200
CTT49GK14 1500 1400
CTT49GK16 1700 1600
CTT49GK18 1900 1800

Symbol Test Conditions Maximum Ratings Unit

ITRMS, IFRMS TVJ=TVJM 80
A
ITAVM, IFAVM TC=85oC; 180o sine 49
TVJ=45oC t=10ms (50Hz), sine 1150
VR=0 t=8.3ms (60Hz), sine 1230
ITSM, IFSM A
TVJ=TVJM t=10ms(50Hz), sine 1000
VR=0 t=8.3ms(60Hz), sine 1070
TVJ=45oC t=10ms (50Hz), sine 6600
2 VR=0 t=8.3ms (60Hz), sine 6280
i dt A2s
TVJ=TVJM t=10ms(50Hz), sine 5000
VR=0 t=8.3ms(60Hz), sine 4750
TVJ=TVJM repetitive, IT=150A 150
f=50Hz, tp=200us
(di/dt)cr VD=2/3VDRM A/us
IG=0.45A non repetitive, IT=ITAVM 500
diG/dt=0.45A/us
TVJ=TVJM; VDR=2/3VDRM
(dv/dt)cr 1000 V/us
RGK= ; method 1 (linear voltage rise)
TVJ=TVJM tp=30us 10
PGM W
IT=ITAVM tp=300us 5
PGAV 0.5 W
VRGM 10 V
TVJ -40...+125
TVJM 125 o
C
Tstg -40...+125
50/60Hz, RMS t=1min 3000
VISOL _ V~
IISOL<1mA t=1s 3600
Mounting torque (M5) 2.5-4.0/22-35
Md Nm/lb.in.
Terminal connection torque (M5) 2.5-4.0/22-35
Weight Typical including screws 90 g

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 CTT49
Thyristor-Thyristor Modules

Symbol Test Conditions Characteristic Values Unit

IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM 5 mA
o
VT, VF IT, IF=200A; TVJ=25 C 1.75 V
VTO For power-loss calculations only (TVJ=125oC) 0.85 V
rT 5.3 m
o
VD=6V; TVJ=25 C 1.5
VGT V
TVJ=-40oC 1.6
VD=6V; TVJ=25oC 100
IGT mA
TVJ=-40oC 200
VGD TVJ=TVJM; VD=2/3VDRM 0.2 V
IGD 10 mA
o
TVJ=25 C; tp=10us; VD=6V
IL 450 mA
IG=0.45A; diG/dt=0.45A/us
IH TVJ=25oC; VD=6V; RGK= 200 mA
o
TVJ=25 C; VD=1/2VDRM
tgd 2 us
IG=0.45A; diG/dt=0.45A/us
TVJ=TVJM; IT=120A; tp=200us; -di/dt=10A/us typ.
tq 150 us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
QS TVJ=TVJM; IT, IF=50A; -di/dt=0.64A/us 90 uC
IRM 11 A
per thyristor/diode; DC current 0.53
RthJC K/W
per module 0.265
per thyristor/diode; DC current 0.73
RthJK K/W
per module 0.365
dS Creeping distance on surface 12.7 mm
dA Strike distance through air 9.6 mm
a Maximum allowable acceleration 50 m/s2

FEATURES APPLICATIONS ADVANTAGES

* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
* UL registered, E 72873
* Gate-cathode twin pins for version 1
* DC motor control
* Softstart AC motor controller
* Light, heat and temperature
control
* Space and weight savings
* Simple mounting with two screws
* Improved temperature and power
cycling
* Reduced protection circuits

DEECorp.
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 CTT49
Thyristor-Thyristor Modules

Fig. 1 Surge overload current Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current
ITSM, IFSM: Crest value, t: duration at case temperature
10
o
1: IGT, TVJ = 125 C
o
V 2: IGT, TVJ = 25 C
o
3: IGT, TVJ = -40 C
VG

3
1 2 6
5
1
4

4: PGAV = 0.5 W
o 5: PGM = 5W
IGD, TVJ = 125 C
6: PGM = 10 W
0.1
100 101 102 103 mA 104
IG

Fig. 3 Power dissipation versus on-state current and ambient temperature Fig. 4 Gate trigger characteristics
(per thyristor or diode)
1000
o
TVJ = 25 C

s
tgd
typ. Limit
100

10
3 x CTT49

1
10 100 mA 1000
IG

Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current Fig. 6 Gate trigger delay time
and ambient temperature

DEECorp.
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 CTT49
Thyristor-Thyristor Modules

Fig. 7 Three phase AC-controller:

Power dissipation versus RMS
output current and ambient
temperature

3 x CTT49

CTT49
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.53
o
180 C 0.55
o
120 C 0.58
o
60 C 0.6
o
30 C 0.62

Constants for ZthJC calculation:

i Rthi (K/W) ti (s)
1 0.015 0.0035
2 0.026 0.02
3 0.489 0.195

Fig. 9 Transient thermal impedance

junction to heatsink (per thyristor
CTT49 or diode)
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.73
o
180 C 0.75
o
120 C 0.78
o
60 C 0.8
o
30 C 0.82

Constants for ZthJK calculation:

i Rthi (K/W) ti (s)
1 0.015 0.0035
2 0.026 0.02
3 0.489 0.195
4 0.2 0.68

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