IGBT

HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery
anti-paralleldiode

IKW40N120H3
1200Vhighspeedswitchingseriesthirdgeneration

Datasheet

IndustrialPowerControl
 IKW40N120H3
Highspeedswitchingseriesthirdgeneration

HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast
recoveryanti-paralleldiode

Features: C

TRENCHSTOPTMtechnologyoffering
•verylowVCEsat
•lowEMI
•Verysoft,fastrecoveryanti-paralleldiode
•maximumjunctiontemperature175°C G
•qualifiedaccordingtoJEDECfortargetapplications E
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:

•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
G
C
E

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IKW40N120H3 1200V 40A 2.05V 175°C K40H1203 PG-TO247-3

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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

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MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value Unit

Collector-emitter voltage VCE 1200 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C IC 80.0 A
TC=100°C 40.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 160.0 A
TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 160.0 A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C IF 40.0 A
TC=100°C 20.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 160.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC≤600V
Allowed number of short circuits < 1000 tSC µs
Time between short circuits: ≥ 1.0s
Tvj=175°C 10
PowerdissipationTC=25°C 483.0
Ptot W
PowerdissipationTC=100°C 220.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
°C
wave soldering 1.6mm (0.063in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
Rth(j-c) 0.31 K/W
junction - case
Diode thermal resistance,
Rth(j-c) 1.11 K/W
junction - case
Thermal resistance
Rth(j-a) 40 K/W
junction - ambient

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ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V
VGE=15.0V,IC=40.0A
Tvj=25°C - 2.05 2.40
Collector-emitter saturation voltage VCEsat V
Tvj=125°C - 2.50 -
Tvj=175°C - 2.70 -
VGE=0V,IF=20.0A
Diode forward voltage VF Tvj=25°C - 1.80 2.35 V
Tvj=175°C - 1.85 -
VGE=0V,IF=40.0A
Tvj=25°C - 2.40 3.05
Diode forward voltage VF V
Tvj=125°C - 2.60 -
Tvj=175°C - 2.60 -
Gate-emitter threshold voltage VGE(th) IC=1.00mA,VCE=VGE 5.0 5.8 6.5 V
VCE=1200V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 250.0 µA
Tvj=175°C - - 2500.0
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA
Transconductance gfs VCE=20V,IC=15.0A - 20.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 2330 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 185 - pF
Reverse transfer capacitance Cres - 130 -
VCC=960V,IC=40.0A,
Gate charge QG - 185.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case
Short circuit collector current VGE=15.0V,VCC≤600V,
Max. 1000 short circuits IC(SC) tSC≤10µs - - A
139
Time between short circuits: ≥ 1.0s Tvj=175°C

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SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 30 - ns
Rise time tr VCC=600V,IC=40.0A, - 57 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=12.0Ω,RG(off)=12.0Ω, - 290 - ns
Fall time tf Lσ=70nH,Cσ=67pF - 16 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 3.20 - mJ
Turn-off energy Eoff diode reverse recovery. - 1.20 - mJ
Total switching energy Ets - 4.40 - mJ

DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr Tvj=25°C, - 355 - ns
Diode reverse recovery charge Qrr VR=600V, - 1.90 - µC
IF=40.0A,
Diode peak reverse recovery current Irrm diF/dt=500A/µs - 12.8 - A
Diode peak rate of fall of reverse
dirr/dt - -150 - A/µs
recoverycurrentduringtb

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) Tvj=175°C, - 29 - ns
Rise time tr VCC=600V,IC=40.0A, - 49 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=12.0Ω,RG(off)=12.0Ω, - 366 - ns
Fall time tf Lσ=70nH,Cσ=67pF - 48 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 4.40 - mJ
Turn-off energy Eoff diode reverse recovery. - 2.60 - mJ
Total switching energy Ets - 7.00 - mJ

DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time trr Tvj=175°C, - 639 - ns
Diode reverse recovery charge Qrr VR=600V, - 4.30 - µC
IF=40.0A,
Diode peak reverse recovery current Irrm diF/dt=500A/µs - 16.0 - A
Diode peak rate of fall of reverse
dirr/dt - -105 - A/µs
recoverycurrentduringtb

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160
100

140
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
tp=1µs
120
10µs
10
100 50µs

100µs
80
200µs

500µs
60
1 DC
TC=80°
40
TC=110°

TC=80°
20
TC=110°

0 0.1
1 10 100 1000 1 10 100 1000
f,SWITCHINGFREQUENCY[kHz] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching Figure 2. Forwardbiassafeoperatingarea
frequency (D=0,TC=25°C,Tj≤175°C;VGE=15V)
(Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V,
rG=12Ω)

500 80

400
60
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]

300

40

200

20
100

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase Figure 4. Collectorcurrentasafunctionofcase
temperature temperature
(Tj≤175°C) (VGE≥15V,Tj≤175°C)

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140 180

VGE=20V 160 VGE=20V

120
17V 17V
140
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
15V 15V
100
13V 120 13V

11V 11V
80 100
9V 9V

60
7V 80 7V

5V 5V
60
40
40

20
20

0 0
0 1 2 3 4 5 6 0 2 4 6 8
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaloutputcharacteristic
(Tj=25°C) (Tj=175°C)

150 5.0
Tj=25°C IC=20A
Tj=175°C IC=40A
VCE(sat),COLLECTOR-EMITTERSATURATION[V]

4.5 IC=80A

4.0
IC,COLLECTORCURRENT[A]

100
3.5

3.0

2.5
50

2.0

1.5

0 1.0
5 10 15 0 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic Figure 8. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)

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1000 1000
td(off) td(off)
tf tf
td(on) td(on)
tr tr
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
100 100

10 10
5 15 25 35 45 55 65 75 0 10 20 30 40
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V, (ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=12Ω,testcircuitinFig.E) IC=40A,testcircuitinFig.E)

1000 7
td(off) typ.
tf min.
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

td(on) max.
tr
6
t,SWITCHINGTIMES[ns]

100

10 2
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C] Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof Figure 12. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(ind.load,VCE=600V,VGE=15/0V,IC=40A, (IC=1mA)
rG=12Ω,testcircuitinFig.E)
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20 12
Eoff Eoff
Eon Eon
18
Ets Ets
10
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
16

14
8

12

10 6

4
6

4
2

0 0
5 15 25 35 45 55 65 75 0 10 20 30 40
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V, (ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=12Ω,testcircuitinFig.E) IC=40A,testcircuitinFig.E)

8 10
Eoff Eoff
Eon Eon
Ets Ets
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

8
6

2
2

0 0
25 50 75 100 125 150 175 400 500 600 700 800
Tj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(indload,VCE=600V,VGE=15/0V,IC=40A, (ind.load,Tj=175°C,VGE=15/0V,IC=40A,
rG=12Ω,testcircuitinFig.E) rG=12Ω,testcircuitinFig.E)
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16
240V
960V
14
VGE,GATE-EMITTERVOLTAGE[V]

12 1000
Cies
Coes

C,CAPACITANCE[pF]
Cres
10

6 100

0 10
0 40 80 120 160 200 0 10 20 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge Figure 18. Typicalcapacitanceasafunctionof
(IC=40A) collector-emittervoltage
(VGE=0V,f=1MHz)

300 50
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]

tSC,SHORTCIRCUITWITHSTANDTIME[µs]

250 40

200 30

150 20

100 10

50 0
10 12 14 16 18 10 12 14 16 18 20
VGE,GATE-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa Figure 20. Shortcircuitwithstandtimeasafunctionof
functionofgate-emittervoltage gate-emittervoltage
(VCE≤600V,startatTj=25°C) (VCE≤600V,startatTj≤150°C)

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1
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
0.1 D=0.5 D=0.5
0.2 0.2
0.1 0.1
0.05 0.1 0.05
0.02 0.02
0.01 0.01
single pulse single pulse

0.01

0.01

i: 1 2 3 4 i: 1 2 3 4
ri[K/W]: 0.06414 0.074055 0.162315 10.0E-3 ri[K/W]: 0.290775 0.43377 0.363015 0.02781
τi[s]: 3.7E-4 3.9E-3 0.01916724 0.3399433 τi[s]: 2.7E-4 2.6E-3 0.01477471 0.1784607

0.001 0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 21. IGBTtransientthermalimpedance Figure 22. Diodetransientthermalimpedanceasa
(D=tp/T) functionofpulsewidth
(D=tp/T)

800
Tj=25°C, IF = 40A
Tj=175°C, IF = 40A
4
700
Qrr,REVERSERECOVERYCHARGE[µC]
trr,REVERSERECOVERYTIME[ns]

Tj=25°C, IF = 40A
Tj=175°C, IF = 40A

600 3

500
2

400

1
300

200 0
200 400 600 800 1000 200 400 600 800 1000
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverytimeasafunction Figure 24. Typicalreverserecoverychargeasa
ofdiodecurrentslope functionofdiodecurrentslope
(VR=600V) (VR=600V)

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22 0
Tj=25°C, IF = 40A Tj=25°C, IF = 40A
Tj=175°C, IF = 40A Tj=175°C, IF = 40A
20
-50
Irr,REVERSERECOVERYCURRENT[A]

dIrr/dt,diodepeakrateoffallofIrr[A/µs]
18

-100
16

14 -150

12
-200

10

-250
8

6 -300
200 400 600 800 1000 200 400 600 800 1000
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 25. Typicalreverserecoverycurrentasa Figure 26. Typicaldiodepeakrateoffallofreverse
functionofdiodecurrentslope recoverycurrentasafunctionofdiode
(VR=600V) currentslope
(VR=600V)

4.0
Tj=25°C IF=10A
120 Tj=175°C IF=20A
IF=40A
3.5
100
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]

3.0
80

2.5
60

2.0
40

20 1.5

0 1.0
0 1 2 3 4 0 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 27. Typicaldiodeforwardcurrentasafunction Figure 28. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature

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PG-TO247-3

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vGE(t) I,V
90% VGE
dI/dt a b

a b
10% VGE
t
IC(t)
dI

90% IC
90% IC

10% IC 10% IC
t Figure C.

vCE(t)

td(off) tf td(on) tr
t

Figure A.
vGE(t)
90% VGE

Figure D.

10% VGE
t
IC(t)

CC

2% IC
t

vCE(t)
Figure E.

parasitic
t2 t4
relief
E = VCE x IC x dt E = VCE x IC x dt
off on
t1 t3 2% VCE
t1 t2 t3 t4
t

Figure B.

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RevisionHistory
IKW40N120H3

Revision:2014-11-26,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2009-12-03 -
1.2 2010-02-10 -
2.1 2014-11-26 Final data sheet

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Publishedby
InfineonTechnologiesAG
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81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.

LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.
Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,
includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

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Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon
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Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin
question,pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon
Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain
and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.

16 Rev.2.1,2014-11-26