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PII: S0960-1481(17)30164-7
DOI: 10.1016/j.renene.2017.02.078
Reference: RENE 8585
Please cite this article as: Kahoul N, Chenni R, Cheghib H, Mekhilef S, Evaluating the reliability of
crystalline silicon photovoltaic modules in harsh environment, Renewable Energy (2017), doi: 10.1016/
j.renene.2017.02.078.
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Nabil Kahoula , Rachid Chennia , Cheghib hocineb , Saad Mekhilefc
a
University Constantine 1, Faculty of Technology, Department of Electrical Engineering,
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MoDERNa Laboratory, Constantine 25000, Algeria.
b
Laboratoire des systèmes électromécaniques, Université Badji mokhtar. Annaba.
c
Power Electronics And Renewable Energy Research Laboratory (PEARL), Department
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of Electrical Engineering, University of Malaya, Malaysia.
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Abstract
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Electricity generated using photovoltaic system can only be commercial
2 if the photovoltaic modules operate reliably for 20-25 years under field condi-
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3 tions. Understanding the performance degradation of photovoltaic modules
4 is critical for optimizing its financial viability. Performance degradation of
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11 This evaluation usually consists of I-V curve field measurements and visual
12 inspections.
Keywords:
c-Si PV modules, Degradation, Failure, Desert, Performance evaluation.
Emailsubmitted
Preprint address: to Renewable Energy (Nabil Kahoul)
nabil_ka@yahoo.fr February 27, 2017
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1. INTRODUCTION
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13 Crystalline silicon PV cells are manufactured from thin silicon wafers.
14 for the production of mono-c-Si cells, silicon is shaped in a cylindrical ingot
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15 form. Thin slices with thickness of (0,2-0,3)mm are cut from these ingots and
16 then formed into usually hexagonal shapes in order to cover as much of the
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17 modules aperture area as possible. Mass produced monocrystalline cells have
18 an efficiency of 13% to 19% and are the most efficient cells yet to enter the
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19 PV market [1, 2] . Polycrystalline silicon is also produced from high purity
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21
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molten silicon, only in this case it is formed through a casting process. A
comparison between poly-c-Si and mono-c-Si cells in terms of efficiency shows
that monocrystalline are (1,5-2,0)% more efficient than polycrystalline, but
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23 the latter are cheaper to produce [2, 3]. This is one of the main reasons that
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26 and the environmental conditions of the site where the modules are installed
27 [4, 5]. In the photovoltaic technology, it is clear that c-Si PV modules do
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30 ity after 20 years [7, 8]. This is not quite as impressive as it seems. It’s
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31 likely the panels output decrease within a few years, as, some modules are
32 prone to degrading much more quickly or even fail when operating outdoors
33 [4, 7]. Degradation mechanisms may involve either a gradual reduction in
34 the output power of a PV module over time or an overall reduction in power
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37 ters and/or by defects that was created by physical material defects and/or
38 structural defects [4, 9]. These defects can also appear when module has
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39 been exposed to extreme hail or heat stress for extended period [10], as the
case of PV modules deployed outdoors under extreme weather conditions of
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40
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48 term outdoor exposure for over 11 years in harsh climates (Saharan Algeria).
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49 Thereafter they have been tested for assessing their long-term reliability. Ob-
50 tained results show a great disparity compared to the results obtained in the
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51 literature and that due to extreme weather conditions of this particular ge-
52 ographic region, where the panels have been installed, as shown in figure 2
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53 and 3, the sun at maximum power that the modules are often exposed to the
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59 Figure 1 presents the photovoltaic platform that has been used in this
60 study. It is installed at Adrar in Algeria, Adrar is located on the extreme
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61 southern Algeria (27 52 00 Nord, 0 17 00 West). It presents a dry climate.
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70
Tmin
Tmax
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50
Temperature (°C)
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30
20
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10
0
Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Month
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Figure 2: The monthly average of the maximum and minimum temperatures.
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67 The site climate data reported from research unit of renewable energy in
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68 Saharan middle, Adrar www.urerms.dz. Measurements were carried out at
69 Adrar.
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1000 1000
Irradiation solaire (w/m²)
800 800
600 600
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400 400
200 200
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0 0
8 9 10 11 12 13 14 15 16 17 18 8 9 10 11 12 13 14 15 16 17 18
Heur (h) Heur (h)
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74 ules have been used for different application such as water pumping system
75 and public lighting at research unit. The technical characteristics of PV
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76 modules provided by the manufacturers are given in Table 1.
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Table 1: Technical characteristics of PV modules
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Parameters Mono-crystalline UDTS-50 Poly-crystalline PWX500
Open-circuit voltage Voc V 21.6 21.6
Short-circuit current Isc
Voltage at MPP Vmp
A
V
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3.18
17.5
3.2
17.2
Current at MPP Imp A 2.9 2.9
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Maximum power Pm W 50 50
Ns 36 36
Fill factor FF % 72 72.34
Efficiency ȵ
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% 12.83 10.40
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84 nected in series and two bypass diodes connected in series, with a maximum
85 power of 50 Wc. Module dimensions: 1042 x 462 x 39 mm.
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86 Measurements (I-V and P-V curves, FF and Pmax ) are made with ’MP-
87 160 I-V tracer’. The MP-160 tracer carries out the field measurement of the
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88 I-V characteristic and of the main characteristic both of a single module and
of module strings, also the values of its temperature and incident irradiation.
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90 It offers a high level of flexibility. The calculation accuracy for current and
voltage values of I-V curve is 0.5% against full scale.
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93 tinuous data retrieval and make an automatic STC conversion of the measur-
94 able modules parameters, as shown in figure 3. This operation corresponds
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95 to the translation to standard conditions, it allow comparing the I-V charac-
96 teristics obtained experimentally and those provided by the manufacturer.
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97 3. PV modules performance evaluation
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98 An I-V curve can clearly describe the PV module performance under dif-
ferent climatic conditions such as temperature and solar irradiation [11, 12].
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100
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The characteristic equation I-V is given by:
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V + IR
s V + IRs
I = Iph − I0 exp −1 − (1)
AVt Rp
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103 recording of measurements such as: voltage and current at the maximum
104 power point (MPP) of the panel, Vmp , Imp , Maximum power Pm , open-circuit
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105 voltage, Voc , short-circuit current, Isc , fill factor, F F , series resistance, Rs ,
106 shunt resistance, Rsh , from I-V curves of modules and the meteorological
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108 T . This evaluation will give a diagnosis of electrical parameters that con-
109 tribute to the degradation effect [4, 13, 14]. Therefore, a degradation factor
110 was defined for various PV module performance parameters to estimate the-
111 oretically, the change rate of its value according to the initial value. The
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V Pdeg
F D(%) = 1 − .100 (2)
V Pini
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113 Where
∗ FD : Degradation factor (Degradation rate) for the considered parameter.
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114 ∗ V Pini : Initial value of the considered parameter (Pm , Rs ,...).
∗ V Pdeg : Parameter value after degradation.
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116 The degradation factor is used to evaluate the long term changes in the
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118 losses.
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performance. It provides important information about the overall effect of
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119 4. Results and discussion
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120 The following section presents the electrical degradation of different pa-
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123 (Pm), maximum voltage (Vmp), maximum current (Imp), fill factor (FF),
124 are summarized in table 2.
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126 The I-V curve of a PV module describes its energy conversion capability
127 at the existing conditions of solar irradiation and temperature [13, 17]. The
128 modification of such characteristic can be expected when there is a change
129 in the PV module state [4, 18].
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50 4
45 3.5
MV04
40 MV01
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Reference 3
35
2.5
Current I(A)
30
Power (W)
MV01
25 2 MV04
Reference
20 1.5
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10
0.5
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0 0
0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22
Voltage (V) Voltage (V)
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3.5
50
45
40
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PV02
PV03
PV04
PV05
PV06
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2.5
PV07
30
Current (A)
Power (W)
Reference 2
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25 PV02
PV03
1.5
20 PV04
PV05
15 1 PV06
PV07
10 Reference
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0.5
5
0 0
0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22
Voltage (V) Voltage (V)
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130 Figure 5 shows a comparison of I-V and PV curves of the three monocrystalline-
131 silicon PV modules studied between the initial state (Reference) and after 11
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132 years of operation in field. Is noted that the maximum power (Pm) is reduced
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133 for all PV modules. The maximum power point have moved further from the
134 inflection point of the initial characteristic. We can already note this change,
135 that due to these modules have been longer exposed for 11 years. Other per-
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136 formance parameters such as open circuit voltage (Voc),short circuit current
137 (Isc) and Fill factor(FF), degradation rates are different and show no corre-
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138 lation one technology to another. Indeed, the degradation is higher in open
139 circuit voltage Voc for the module (Poly-c-Si) while short circuit current Isc
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140 is more degraded with module (mono-Si). No major visual defects have been
reported. Visual inspection on polycristalline silicon modules PWX-500 re-
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141
142 vealed that the power loss may caused by defects as yellowing and browning,
as shown in figure 1, This phenomenon usually consists of a degradation of
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144 the EVA or the adhesive material between the cells and the glass [19, 20].
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The modules PV05, PV06 and PV07 have the highest degradation rates for
146 all parameters; they have a longer operating time (11 years).
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147 4.2. Degradation of electrical parameters
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148 The following section presents the degradation rate (FD) for the different
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151 The degradation rate differs from one module to another. A negative
152 value implies increased performance over time. The PV modules with larger
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154
155 parameters. From table 2, the average power loss is equal to 1,05%/year.
156 These modules have high reliability, this reliability may due to the stability
157 of crystalline silicon solar cells, indeed, the PV modules UDTS-50 have a
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MV01 45.25 8.59
𝑉𝑚𝑝 (V) 14.53 16.97
𝐼𝑚𝑝 (A) 3.12 -7.59
𝐹𝐹 (%) 61.47 14.62
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61.45 14.65
𝐹𝐹 (%)
MV06
𝑃𝑚 (W)
50 6.38 87.11
Mono-c-Si 11 𝑉𝑚𝑝 (V) 17.5 3.35 80.86
UDTS-50 years 𝐼𝑚𝑝 (A) 2.9 1.91 34.14
𝐹𝐹 (%) 72 32.56 54.78
MV07
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𝑃𝑚 (W) 9.86 80.08
𝑉𝑚𝑝 (V) 4.83 72.40
𝐼𝑚𝑝 (A) 2.04 29.65
𝐹𝐹 (%) 33.62 53.31
MV03 𝑃𝑚 (W)
𝑉𝑚𝑝 (V) 23.21 51.22
𝐼𝑚𝑝 (A) 4.10 74.92
Adrar, 5.66 -94.51
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𝐹𝐹 (%)
Algeria 22.64 67.87
PV03 𝑃𝑚 (W) 31.56 36.88
𝑉𝑚𝑝 (V) 12.45 27.62
𝐼𝑚𝑝 (A) 2.53 12.76
11
years
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PV04
𝐹𝐹 (%)
𝑃𝑚 (W)
𝑉𝑚𝑝 (V)
𝐼𝑚𝑝 (A)
𝐹𝐹 (%)
62.64
32.28
12.5
2.57
62.35
13.41
35.44
27.33
11.38
13.81
PV02
𝑃𝑚 (W)
50 33.32 33.36
𝑉𝑚𝑝 (V)
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17.2 12.94 24.77
Poly-c-Si 𝐼𝑚𝑝 (A) 2.9 2.57 11.38
PWX500 𝐹𝐹 (%) 72.34 65.40 9.59
PV06 𝑃𝑚 (W) 36.08 27.84
𝑉𝑚𝑝 (V) 15.33 10.87
𝐼𝑚𝑝 (A) 2.35 18.97
𝐹𝐹 (%) 68.24 5.67
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PV07
𝑃𝑚 (W)
39.16 21.68
𝑉𝑚𝑝 (V) 15.58 9.42
𝐼𝑚𝑝 (A) 2.51 13.45
𝐹𝐹 (%) 68.71 5.02
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158 good electrical insulation against extreme weather conditions of desert envi-
ronment. For MV06, MV07 and MV03, The results show a large disparity
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159
161 represent almost a full failure. for MV06 and MV07, the visual inspection
162 revealed some defects as cracks in cells and anti-reflection coating deteriora-
163 tion, that appear in the cells after it has been exposed to heat stress for 11
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164 years in field or due to physical material defects formed during processing
165 and assembly. Crack in the cell removes a part of the cell from its electrical
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166 circuit resulting in a relatively decrease in voltage produced [7, 18]. Cracked
167 cell could reduce more than 10% of the cell’s area from electrical circuit of
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168 the module [7, 18, 20]. For MV03, the visual inspection revealed a corrosion
of cell-interconnect busbar that appears in module and led to separate the
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169
170 affected cell from others, hence it have the effect of large mismatch in current
produced by the module , as shown in figure 7.
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171
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174 the operating point of the module, as a result, PV module configuration has
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175 been changed from series connection to parallel due to internal configuration
176 of bypass diode, as shown in figure 8.
177 From table 2, evaluation of performance parameters of polycrystalline sil-
178 icon modules PWX-500 showed the high effect of heat stress on the efficiency
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1
1
1
V12Cell
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1
13
13
13
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25
12
Equivalent Equivalent
25
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24
24
24
36
25
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36
V
Panel = 12.V Cell
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36
36
I =2I
Total
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179 and performance of this technology with time. power losses analysis shows
180 that these modules do not have a reliability in desert environment and do
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181 not respect guaranty conditions. After six operation years in field, modules
182 PV05, PV06 and PV07 present the average degradation rate of 4,11%/year,
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183 that shows the early degradation of polycrystalline silicon cells after few op-
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184 eration years under Saharan environment that may due to the instability of
185 polycrystalline solar cells. For PV02, PV03 and PV04 the average degrada-
186 tion rate is equal to 3,20%/year, after 11 yaers in the same field. Indeed, the
187 degradation is higher in maximum voltage Vmp for modules have more op-
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188 eration years, while maximum current is more degraded with modules have a
189 few operation years under desert environment. No major visual defects have
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190 been reported for this technology.
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191 5. Summary and conclusion
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192 Performance measurements of outdoor testing of crystalline silicon pho-
193 tovoltaic modules in desert environment have been performed. Eleven PV
modules (5 monocrystalline silicon and 6 polycrystalline silicon) were exposed
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195 during a years on the site of research unit of renewable energy in Saharan
196
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Middle (URER/MS), Adrar, Algeria. The degradation impact on the IV
197 and PV characteristics of PV modules after exposition years under desert
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198 environment was highlighted. Performance analysis of modules provides an
insight in the operational behavior of this technology. This study shows that,
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199
201 icon PV modules present mean degradation rates ranging from 3.33 %/year
202 to 4.64%/year and therefore this technology do not has any reliability in
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203 desert environment, some monocrystalline silicon modules have failed due to
204 physical material defects and/or structural defects. Degradation rates mea-
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205 surements are essential in assessing the reliability and the effective life span
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209 Acknowledgments
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210 The authors would like to thank research unit of renewable energy in
211 Saharan middle, (http://urerms.cder.dz/), Adrar, for their kind availability
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212 and for the possibility to access data and equipment utilization.
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Highlights
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- Obtained results show a great disparity compared to the literature
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