Practice Problems

(Instructor: Monica Katiyar)

Surfaces:

1. Draw the atomic structure of (100), (110) and (111) planes of a Si unit cell.
2. Draw the structure of a (100) surface of Si which was cut at 1o angle.

Gas kinetics:

1 Estimate the impinging flux of air at 10-6 torr and 298 K. Assume only N2 (28gm/mole) in
ambient? What is the residence time for molecular nitrogen if desorption energy is 0.5 eV?
What will be steady state coverage of N2 on Si (100) surface. (νs = 1013/sec) (k = 1.38 x 10-23
J/K)

2 If we are doing Si (100) epitaxy at the rate of 1 micron/min, what will be the N impurity
content? (Use other data from previous problem and assume sticking coefficient for Si and
N2 flux to be 1)

3 For Si epitaxial growth rate of one monolayer per sec, we require purity of 100 ppm for the
deposited films. What should be the required vacuum level in the chamber? (Assume
residual gas is mainly N2 at 298K)

4 For (111) Si epitaxial growth rate of one monolayer per sec, we require purity of 100 ppm for
the deposited films. What should be the required vacuum level in the chamber? (Assume
residual gas is mainly N2 at 300K; and sticking coefficient is one for Si and N2). (Si :a=
0.543 nm.) (5)

5 Explain why average kinetic energy of atom impinging on a substrate is higher than average
energy of the gas atom.