Assignment #

1. In a silicon lattice, where should you look if you want to find (a) a conduction electron,
(b) a valence electron, and (c) an electron associated with the 2p subshell of the isolated
silicon atom?

2. If the temperature of a piece of a metal is increased, does the probability of occupancy

0.1 eV above the Fermi level increase, decrease, or remain the same?

3. The occupancy probability at a certain energy E1 in the valence band of a metal is 0.60
when the temperature is 300 K. Is E1 above or below the Fermi energy?

4. Is the drift speedvd of the conduction electrons in a current-carrying copper wire about
equal to, much greater than, or much less than the Fermi speed vf for copper?

5. An isolated atom of germanium has 32 electrons, (a) Write the electronic configuration of
it (i.e. arrange these electrons subshells according to the scheme: 1S 2S2P 3S3P3D and so
on). This element has the same crystal structure as silicon and, like silicon, is a
semiconductor. (b) Which of these electrons form the valence band of crystalline
germanium?

6. What is the Fermi energy of gold (a monovalent metal with molar mass 197 g/mol and
density I9.3 g/cm3)?

7. Using modify form of Ampere law and find the speed of light (EM wave).

8. In Fig, a beam of unpolarized light, with intensity 43W/m 2, is sent into a system of two
polarizing sheets with polarizing directions at angles θ1= 70o" and θ2= 90o" to the y axis.
What is the intensity of the light transmitted by the system?

9. Discuss the following

i. Total internal reflection (Critical angle)

ii. Polarization by reflection (Brewster Angle)

Due Date: 15/7/19