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ASSIGNMENT PHYSICS CLASS - XII CBSE

TOPIC : ELECTRONIC DEVICES

SECTION - A
SINGLE CORRECT QUESTIONS [01 Mark Each]

1. In the depletion region of a p-n junction, there (b) electrons move from higher energy level to
is ashortage of …….. lower energy level in the conduction band.
(a) Acceptor ions (c) holes in the valence band move from higher
(b) Holes and electrons energy level to lower energy level.

(c) Donor ions (d)None of the above (d) holes in the valence band move from lower
energy level to higher energy level.
2. For a pure semiconductor the Fermi level is:
6. The reverse bias current ______ with the
(a) in the conduction band
increase of temperature.
(b) near the centre of the gap between the
(a)decreases (b) increases
valence and conduction bands
(c) remains same (d) none of the above
(c) in the valence band
7. Which one of the following represents forward
(d )well below the valence band
bias diode?
3. Hole is
(a). an anti-particle of electron
(b). a vacancy created when an electron leaves (a)
a covalent bond
(c). absence of free electron (b)
(d). an artificially created particle
(c)
4. At room temperature relation between number
of holes and electrons in pure silicon crystal is
(d)
(a)ne>nh (b)ne<nh
(c)ne= nh (d)ne e” nh 8. In an unbiased p-n junction, holes diffuse from
5. When an electric field is applied across a p- region to n-region because
semiconductor (a) free electrons in the n-region attract them.
(a) electrons move from lower energy level to (b) they move across the junction by the
higher energy level in the conduction band. potential difference.

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 (c) D1 is reverse biased and D2 is forward biased
(c) hole concentration in p-region is more as
compared to n-region. (d) D2 is reverse biased and D1 is forward biased

(d) all the above. 14. The diffused impurities with ______________
valance electrons are called acceptor atoms.
9. The I-V characteristics of an LED is
(a) 0 (b) 3
(c) 4 (d) 5
15. At what temperature would an intrinsic
semiconductor behave like a perfect insulator?
16. Name the two processes involved in the
formation of p-n junction
17. Draw V-I characteristics of a p-n junction diode
in
(a) forward bias (b) reverse bias
18. In reverse biasing condition barrier potential of
p-n junction diode_________.
19. Draw input and output waveforms for full-
wave rectifier.
10. When semiconductor is heated its resistance 20. Why would photodiode be operated at reverse
(a)Increases (b) Decreases bias?

(c)Remains constant (d) nothing is definite. 21. Draw the symbol indicating (i) Zenerdiode (ii)
photodiode
11. The current obtain from simple filter less full
wave rectifier is 22. Why Si and GaAs are most commonly used in
making of a solar cell?
(a) Varying direct current
23. Draw energy band diagram for a (i) p- type
(b) Constant direct current extrinsic semiconductor (ii) n-type extrinsic
(c) Half current semiconductor.
(d) Eddy current 24. The device used to obtain steady d c voltage
from pulsating voltage is called__________.
12. The symbol of photocell:
25. Majority charge carriers in p type
(a) (b) semiconductor are ________.
26. The depletion width of p- n junction
(c) (d) _____________ in the forward bias condition.
27. Addition of _____________impurity to a
13. In the following diode circuit
semiconductor creates many holes.
28. A rectifier converts ________ to __________.
29. The colour of light emitted by a LED depends
on its __________.
30. The reverse saturation current level is typically
measured in _________.
(a) D1 and D2 are reverse biased
(b) D1 and D2 are forward biased

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 SECTION - B
Short Answer type Question: [02 Marks Each]
1. In half-wave rectification, what is the output frequency if the input frequency is 50 Hz. What is the
output frequency of a full-wave rectifier for the same input frequency.
2. State the factor, which controls : (i) wavelength of light, and (ii) intensity of light emitted by an
LED.
3. Distinguish between a conductor, a semiconductor and an insulator on the basis of energyband
diagrams.
4. Write two characteristic features to distinguish between n-type and p-type semiconductors.
5. Write the main use of the (i) photo diode (ii) Zener diode
6. Give reason to explain why n and p regions of a Zener diode are heavily doped. Find the current
through the Zener diode in the circuit given below : (Zener breakdown voltage is 15 V)

7. Using suitable diagram, show How is forward biasing different from reverse biasing  in a p-n
junction diode?
8. What is the reason to operate photodiodes in reverse bias ? A p-n photodiode is fabricated from a
semiconductor with a band gap 2·8 Evcan it detect a wavelength of 6000nm? justfy.
9. The circuit shown in the figure contains two diodes each with a forward resistance of 50 ohm and
infinite backward resistance. Calculate the current in the 100ohmresistance?

10. Diode used in the figure has a constant voltages drop at 0.5V at all currents and a maximum power
rating of 100mW. What should be the value of the resistance R connected in series for maximum
current?

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Long Answer type Question: [04 Marks Each]
1. With the help of a suitable diagram, explain the formation of depletion region in a p-n junction.How
does its width change when the junction is (i) forward biased, and (ii) reverse biased?
2. How is forward biasing different from reverse biasing in a p-n junction diode?
3. On the basis of energy band theory define valence band, conduction band and energy gap. For a
extrinsic semiconductor, indicate on the energy band diagram the donor and acceptor levels?
4. Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave
rectifier.
5. Why does the reverse current in pn-junction show a sudden increase at the critical voltage? Name
any semiconductor device which operates under the reverse bias in the breakdown. Draw its V-I
characteristics.

Long Answer Type Questions : [06 Mark Each]

1. Distinguish between a conductor, an insulator and a semiconductor on the basis of energy band
diagrams.
2. What is p-n junction ? Explain briefly, with the help of suitable diagram, how a p-n junction is
formed. Define the term Potential barrier and depletion region
3. Identify the semiconductor diode whose I-V characteristics are as shown. Draw its symbol. De-
scribe briefly using necessary circuit diagram, three basic processes involved in the generation of
emf

4. Draw a labelled circuit diagram of a full-wave rectifier and briefly explain its workingprinciple.
5. (a) Write the important considerations which are to be taken into account while fabricating a p-n
junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap
of an LED, if it is required to emit light in the visible range? Draw a circuit diagram and explain its
action.
(b) Draw the V-I characteristics of an LED. State two advantages of LED lamps over
conventional incandescent lamps.

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