SEMICONDUCTOR https://quizizz.

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SEMICONDUCTOR
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15 Questions

1. 1. The resistivity of a semiconductor lies between 

A (d) none of these B n(b) 108 Ωm to1014 Ωm

C (a)10 -6 Ωm to10-8 Ωm D (c) 10 -2 Ωm to104 Ωm

2. 2. The forbiddenn energy gap for Germanium is of the order of

A (d) 10 eV B (a) 0.7 eV

C (b) 0.3 eV D (c) 1.1 eV

3. 3. Which of the following is a pentavalent impuity added while forming an extrinsic

semiconductor ?

A Indium B Arsenic

C (a) Boron  D Gallium

4. The reverse saturation current in a PN Junction diode is only due to 

A donor ions B acceptor ions

C minority carriers D majority carriers

5. Doping of Semiconductors

The process of adding of a certain amount

A of specific impurities atoms in the pure B when 4 electrons in outermost orbit.
semiconductor.

materials which can conduct electricity

C better than insulator, but not as well as
conductors.

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6. which statement is correct? (the dark circles represent the

electrons)

p-type of the diode is connected to the

A reverse biased circuit B
negative terminal.

Electron moves across the p-n junction,

C current will not flow in the circuit D
makes the diode forward biased

7. The characteristics of p-type semiconductors is includes

A Majority carriers are electron B Has tendency to donor electron

C Has tendency to gain electron D Easy to conduct electricity

8. The process of adding an impurity to an intrinsic semiconductor is called

A Atomic modification B Doping

C Recombination D Ionization

9. Which of the following statements is NOT the diode application in electronic circuit?

A Diode as Amplifier B Diode as voltage regulator

C Diode as Rectifier D Diode as solar cell

10. A full-wave rectifier consist of _______________________________

A 2 Diode B 1 Diode

C 3 Diode D 4 Diode

11. The minority carriers in P-type silicon are called _________________

A Proton B Neutron

C Hole D Electron

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12. Basic building blocks of all electronic circuits are

devices in which there is an uncontrolled Devices in which there is a flow of

A B
flow of electrons electrons

devices in which there is a controlled flow devices in which there is no flow of

C D
of electrons electrons

13. conductivity of semiconductor increases with increase in temperature, because

number density of free charge carriers

A relaxation time increases B
increases

number density of free charge carriers

increases relaxation time decreases but
both number density of free charge
C effect of decrease in relaxation time is D
carriers and relaxation time increases
much less than increase in number
density

14. Let np and ne be the number density of holes and conduction electrons respectively in a
semiconductor. Then,

np > ne in an intrinsic semiconductor, I < Ip np = ne in an extrinsic semiconductor, I > Ip

A B
+ Ie + Ie

np > ne in an intrinsic semiconductor, I = 0(

np = ne in an intrinsic semiconductor, I = Ip
C Here, Ip = current due to holes,Ie= current D
+ Ie
due to electrons, I= total current)

15. During formation of p-n junction

A an electron diffuses from n to p side B a hole diffuses from p to n side

C an electron diffuses from p to n side D a hole diffuses from n to p side

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Answer Key

1.d 2.b 3.b 4.c

5.a 6.d 7.a 8.b

9.a 10.a 11.d 12.c

13.c 14.d 15.a

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