HIGHER SECONDARY SECOND YEAR-PHYSICS

NAME :
STANDARD : 12 SECTION :
SCHOOL :
EXAM NO :

victory R. SARAVANAN. M.Sc, M.Phil, B.Ed.,

PG ASST (PHYSICS)
GBHSS, PARANGIPETTAI - 608 502
12 PHYSICS UNIT - 10 ELECTRONICS AND COMMUNICATION MULTIPLE CHOICE QUESTIONS & ANSWERS

UNIT - 10 ELECTRONICS AND COMMUNICATION 5. The zener diode is primarily used as

MULTIPLE CHOICE QUESTIONS & ANSWERS WITH SOLUTIONS (a) Rectifier (b) Amplifier
(c) Oscillator (d) Voltage regulator
1. The barrier potential of a silicon diode is approximately,
Solution:-
(a) 0.7 V (b) 0.3V (c) 2.0 V (d) 2.2V
 Zener diode working in the breakdown region can serve as a voltage regulator
Solution:-
 A thin region formed near the PN-junction which is free from charge carriers Answer (d) Voltage regulator
(free electrons and holes) is called depletion region. The difference in potential 6. The principle based on which a solar cell operates is
across the depletion layer is called the barrier potential (𝑉𝑏 ) . (a) Diffusion (b) Recombination
 At 250C, this barrier potential is approximately 0.7 V for silicon and 0.3 V for (c) Photovoltaic action (d) Carrier flow
germanium Solution:-
 A solar cell, also known as photovoltaic cell, works on the principle of
Answer (a) 0.7 V
photovoltaic effect. Accordingly, the p-n junction of the solar cell generates emf
2. Doping a semiconductor results in
when solar radiation falls on it.
(a) The decrease in mobile charge carriers (b) The change in chemical properties
(c) The change in the crystal structure (d) The breaking of the covalent bond Answer (c) Photovoltaic action
Solution:- 7. The light emitted in an LED is due to
 The process of adding impurities to the intrinsic semiconductor is called doping. (a) Recombination of charge carriers
It increases the concentration of charge carriers (electrons and holes) in the (b) Reflection of light due to lens action
semiconductor and in turn, its electrical conductivity. (c) Amplification of light falling at the junction
Answer (c) The change in the crystal structure (d) Large current capacity.
Solution:-
3. In an unbiased p-n junction, the majority charge carriers (that is, holes) in the
 The excess minority carriers formed due to diffusion recombine with oppositely
p -region diffuse into n-region because of
charged majority carriers in the respective regions. During recombination
(a) the potential difference across the p-n junction
process, energy is released in the form of light (radiative) or heat (non-
(b) the higher hole concentration in p-region than that in n-region
radiative).
(c) the attraction of free electrons of n-region
(d) the higher concentration of electrons in the n-region than that in the p-region Answer (a) Recombination of charge carriers
Solution:- 8. The barrier potential of a p-n junction depends on (i) type of semiconductor
 Whenever p-n junction is formed, some of the free electrons diffuse from the material (ii) amount of doping (iii) temperature. Which one of the following is
n-side to the p-side while the holes from the p-side to the n-side. The diffusion of correct?
charge carriers happens due to the fact that the n-side has higher electron (a) (i) and (ii) only (b) (ii) only
concentration and the p-side has higher hole concentration. (c) (ii) and (iii) only (d) (i) (ii) and (iii)
Solution:-
(b) the higher hole concentration in p-region than  Barrier potential (𝑉𝑏 ) is 0.7 V for Si and 0.3 V for Ge
that in n-region
Answer the higher concentration of electrons in the n-  If concentration of dopping is increased, number of charged carrier also
(d) region than that in the p-region increases. Due to this width of depletion region decreases and hence potential
4. If a positive half –wave rectified voltage is fed to a load resistor, for which part barrier increases.
of a cycle there will be current flow through the load?  As temperature increases, the value of barrier potential decreases, because the
(a) 00–900 (b) 900–1800 temperature affects the kinetic energy of the charge carriers.
(c) 00–1800 (d) 00–3600 Answer (d) (i) (ii) and (iii)
Solution:-

Answer (c) 00–1800

victory R. SARAVANAN. M.Sc., M.Phil., B.Ed PG ASST [PHYSICS], GBHSS, PARANGIPETTAI - 608 502
12 PHYSICS UNIT - 10 ELECTRONICS AND COMMUNICATION MULTIPLE CHOICE QUESTIONS & ANSWERS
9. To obtain sustained oscillation in an oscillator, 13. The output of the following circuit is 1 when the input ABC is
(a) Feedback should be positive (b) Feedback factor must be unity
(c) Phase shift must be 0 or 2π (d) All the above
Solution:-
 The following conditions called Barkhausen conditions should be satisfied for
sustained oscillations in the oscillator.
i. There should be positive feedback.
ii. The loop phase shift must be 00 or integral multiples of 2π. (a) 101 (b) 100
iii. The loop gain must be unity. That is, A =1. (c) 110 (d) 010
Answer (d) All the above Solution:-
10. If the input to the NOT gate is A = 1011, its output is  Output ; 𝑌 = (𝐴 + 𝐵) . 𝐶
(a) 0100 (b) 1000 (i) If ABC = 1 0 1, then 𝑌 = (1 + 0) . 1 = 1
(c) 1100 (d) 0011 (ii) If ABC = 1 0 0, then 𝑌 = (1 + 0) . 0 = 0
Solution:- (iii) If ABC = 1 1 0, then 𝑌 = (1 + 1). 1 = 0
(iv) If ABC = 0 1 0, then 𝑌 = (0 + 1) . 0 = 0
 Output of NOT gate ; 𝑌 = 𝐴̅ = ̅̅̅̅̅̅̅
1011 = 0100
Answer (a) 0100 Answer (a) 101
14. The variation of frequency of carrier wave with respect to the amplitude of the
11. Which one of the following represents forward bias diode?
modulating signal is called
(a) Amplitude modulation (b) Frequency modulation
(a) (b) (c) Phase modulation (d) Pulse width modulation
Solution:-
(c) (d)  If the amplitude of the carrier signal is modified in accordance with amplitude
Solution:- of the baseband signal, then it is called amplitude modulation (AM).
 If the positive terminal of the external voltage source is connected to the p-side  If the frequency of the carrier signal is modified in proportion to the amplitude
and the negative terminal to the n-side, it is called forward bias of the baseband signal, then it is called frequency modulation (FM).
 If the phase of the carrier signal is modified in proportion to the amplitude of
Answer (a) the baseband signal, then it is called phase modulation (PM).
12. The given electrical network is equivalent to Answer (b) Frequency modulation
15. The frequency range of 3 MHz to 30 MHz is used for
(a) Ground wave propagation (b) Space wave propagation
(c) Sky wave propagation (d) Satellite communication
Solution:-
(a) AND gate (b) OR gate
 Ground wave (or) surface wave propagation (nearly 2 kHz to 2 MHz)
(c) NOR gate (d) NOT gate
 Sky wave propagation (or) ionospheric propagation (nearly 3 MHz to 30 MHz)
Solution:-
 Space wave propagation (nearly 30 MHz to 400 GHz)
Answer (c) Sky wave propagation

Answer (c) NOR gate

victory R. SARAVANAN. M.Sc., M.Phil., B.Ed PG ASST [PHYSICS], GBHSS, PARANGIPETTAI - 608 502
12 PHYSICS UNIT - 10 ELECTRONICS AND COMMUNICATION MULTIPLE CHOICE QUESTIONS & ANSWERS
11. Which one of the following represents forward bias diode?
UNIT - 10 ELECTRONICS AND COMMUNICATION
MULTIPLE CHOICE QUESTIONS & ANSWERS WITH SOLUTIONS (a) (b)

1. The barrier potential of a silicon diode is approximately,

(a) 0.7 V (b) 0.3V (c) (d)
(c) 2.0 V (d) 2.2V 12. The given electrical network is equivalent to
2. Doping a semiconductor results in
(a) The decrease in mobile charge carriers (b) The change in chemical properties
(c) The change in the crystal structure (d) The breaking of the covalent bond
3. In an unbiased p-n junction, the majority charge carriers (that is, holes) in the (a) AND gate (b) OR gate
p -region diffuse into n-region because of (c) NOR gate (d) NOT gate
(a) the potential difference across the p-n junction 13. The output of the following circuit is 1 when the input ABC is
(b) the higher hole concentration in p-region than that in n-region
(c) the attraction of free electrons of n-region
(d) the higher concentration of electrons in the n-region than that in the p-region
4. If a positive half –wave rectified voltage is fed to a load resistor, for which part
of a cycle there will be current flow through the load?
(a) 00–900 (b) 900–1800
(c) 00–1800 (d) 00–3600 (a) 101 (b) 100
5. The zener diode is primarily used as (c) 110 (d) 010
(a) Rectifier (b) Amplifier 14. The variation of frequency of carrier wave with respect to the amplitude of the
(c) Oscillator (d) Voltage regulator modulating signal is called
6. The principle based on which a solar cell operates is (a) Amplitude modulation (b) Frequency modulation
(a) Diffusion (b) Recombination (c) Phase modulation (d) Pulse width modulation
(c) Photovoltaic action (d) Carrier flow 15. The frequency range of 3 MHz to 30 MHz is used for
7. The light emitted in an LED is due to (a) Ground wave propagation (b) Space wave propagation
(a) Recombination of charge carriers (c) Sky wave propagation (d) Satellite communication
(b) Reflection of light due to lens action
(c) Amplification of light falling at the junction
(d) Large current capacity.
8. The barrier potential of a p-n junction depends on (i) type of semiconductor
material (ii) amount of doping (iii) temperature. Which one of the following is
correct?
(a) (i) and (ii) only (b) (ii) only
(c) (ii) and (iii) only (d) (i) (ii) and (iii)
9. To obtain sustained oscillation in an oscillator,
(a) Feedback should be positive (b) Feedback factor must be unity
(c) Phase shift must be 0 or 2π (d) All the above
10. If the input to the NOT gate is A = 1011, its output is
(a) 0100 (b) 1000
(c) 1100 (d) 0011

victory R. SARAVANAN. M.Sc., M.Phil., B.Ed PG ASST [PHYSICS], GBHSS, PARANGIPETTAI - 608 502