RU1H140R

N-Channel Advanced Power MOSFET

Features Pin Description

•100V/140A,
RDS (ON) =7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)

G
D
S
TO220
Applications D
• High Efficiency Synchronous Rectification in SMPS
• High Speed Power Switching
G

S
N-Channel MOSFET
Absolute Maximum Ratings
Symbol Parameter Rating Unit

Common Ratings (TC=25°C Unless Otherwise Noted)

VDSS Drain-Source Voltage 100

V
VGSS Gate-Source Voltage ±25
TJ Maximum Junction Temperature 175 °C
TSTG Storage Temperature Range -55 to 175 °C
IS Diode Continuous Forward Current TC=25°C 140 A

Mounted on Large Heat Sink

① 300μs Pulse Drain Current Tested TC=25°C 560 A
IDP
TC=25°C 140
② Continuous Drain Current(VGS=10V) A
ID
TC=100°C 99
TC=25°C 300
PD Maximum Power Dissipation W
TC=100°C 150
RθJC Thermal Resistance-Junction to Case 0.5 °C/W
RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W

Drain-Source Avalanche Ratings

③ Avalanche Energy, Single Pulsed 552 mJ
EAS

Ruichips Semiconductor Co., Ltd

Rev. A– NOV., 2013 1 www.ruichips.com
 RU1H140R

Electrical Characteristics (TC=25°C Unless Otherwise Noted)

RU1H140R
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 100 V
VDS=100V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=125°C 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 2 4 V
IGSS Gate Leakage Current VGS=±25V, VDS=0V ±100 nA
④ Drain-Source On-state Resistance VGS=10V, IDS=70A 7 9 mΩ
RDS(ON)
Diode Characteristics
④ Diode Forward Voltage ISD=70A, VGS=0V 1.2 V
VSD
trr Reverse Recovery Time 43 ns
ISD=70A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge 67 nC
⑤
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1 Ω
Ciss Input Capacitance VGS=0V, 6800
VDS=50V,
Coss Output Capacitance 630 pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance 350
td(ON) Turn-on Delay Time 24
tr Turn-on Rise Time VDD=50V,IDS=70A, 91
ns
td(OFF) Turn-off Delay Time VGEN=10V,RG=5Ω 75
tf Turn-off Fall Time 65
⑤
Gate Charge Characteristics
Qg Total Gate Charge 130
VDS=80V, VGS=10V,
Qgs Gate-Source Charge 32 nC
IDS=70A
Qgd Gate-Drain Charge 55

Notes: ①Pulse width limited by safe operating area.

②Calculated continuous current based on maximum allowable junction temperature. The package
limitation current is 75A.
③Limited by TJmax, IAS =47A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
④Pulse test ; Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.

Ruichips Semiconductor Co., Ltd

Rev. A– NOV., 2013 2 www.ruichips.com
 RU1H140R

Ordering and Marking Information

Device Marking Package Packaging Quantity Reel Size Tape width

RU1H140R RU1H140R TO220 Tube 50 - -

Ruichips Semiconductor Co., Ltd

Rev. A– NOV., 2013 3 www.ruichips.com
 RU1H140R

Typical Characteristics
Power Dissipation Drain Current
350 160

300 140
PD - Power (W)

ID - Drain Current (A)

120
250
100
200
80
150
60
100
40
50 20
VGS=10V
0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
TJ - Junction Temperature (°C) TJ - Junction Temperature (°C)

Drain Current
Safe Operation Area 25
RDS(ON) - On - Resistance (mΩ)

1,000.00
Ids=70A
20
RDS(ON) limited
ID - Drain Current (A)

100.00 10µs 15
100µs
1ms
10ms 10
DC
10.00
5

TC=25°C
1.00 0
0.1 1 10 100 1000 0 1 2 3 4 5 6 7 8 9 10
VDS - Drain-Source Voltage (V) VGS - Gate-Source Voltage (V)

Thermal Transient Impedance

ZthJC - Thermal Response (°C/W)

Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse

0.1

Single Pulse
0.01

RθJC=0.5°C/W
0.001
1E-05 0.0001 0.001 0.01 0.1 1

Square Wave Pulse Duration (sec)

Ruichips Semiconductor Co., Ltd

Rev. A– NOV., 2013 4 www.ruichips.com
 RU1H140R

Typical Characteristics
Output Characteristics Drain-Source On Resistance
60 15
VGS=7,8,10V

RDS(ON) - On Resistance (mΩ)

ID - Drain Current (A)

50
12

40
10V
9
30 5V
6
20
3V
3
10

0 0
0 1 2 3 4 5 0 30 60 90 120 150
VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Drain-Source On Resistance Source-Drain Diode Forward

2.5 100
VGS=10V
ID=70A
Normalized On Resistance

2.0
IS - Source Current (A)

TJ=175°C
10
1.5

1.0
1 TJ=25°C

0.5
TJ=25°C
Rds(on)=7mΩ 0.1
0.0
0.2 0.4 0.6 0.8 1 1.2 1.4
-50 -25 0 25 50 75 100 125 150 175
VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)

Capacitance Gate Charge

8000 10
VGS - Gate-Source Voltage (V)

Frequency=1.0MHz VDS=80V
C - Capacitance (pF)

7000 9
IDS=70A
6000 8
Ciss
7
5000
6
4000
5
3000
4
2000 3
Coss
1000 2
Crss 1
0
1 10 100 0
0 50 100 150
VDS - Drain-Source Voltage (V)
QG - Gate Charge (nC)

Ruichips Semiconductor Co., Ltd

Rev. A– NOV., 2013 5 www.ruichips.com
 RU1H140R

Avalanche Test Circuit and Waveforms

Switching Time Test Circuit and Waveforms

Ruichips Semiconductor Co., Ltd

Rev. A– NOV., 2013 6 www.ruichips.com
 RU1H140R

Package Information
TO220
E
A
E1
A1
p
Q
H1

L2 θ1

D P1

DEP
D1

θ2
θ1
L1

b2
L

e A2

e1

E2

SYMBOL MM INCH SYMBOL MM INCH

MIN NOM MAX MIN NOM MAX MIN NOM MAX MIN NOM MAX
A 4.40 4.55 4.70 0.173 0.179 0.185 Φp1 1.40 1.50 1.60 0.055 0.059 0.063
A1 1.20 1.30 1.40 0.047 0.051 0.055 e 2.54 BSC 0.10 BSC
A2 2.23 2.38 2.53 0.088 0.094 0.100 e1 5.08 BSC 0.20 BSC
b 0.75 0.80 0.85 0.030 0.031 0.033 H1 6.40 6.50 6.60 0.252 0.256 0.260
b2 1.17 1.28 1.39 0.046 0.050 0.055 L 12.70 13.18 13.65 0.500 0.519 0.537
c 0.40 0.50 0.60 0.016 0.020 0.024 L1 * * 3.95 * * 0.156
D 15.40 15.60 15.80 0.606 0.614 0.622 L2 2.50 REF 0.098 REF
D1 8.96 9.21 9.46 0.353 0.363 0.372 Φp 3.50 3.60 3.70 0.138 0.142 0.146
DEP 0.05 0.13 0.20 0.002 0.005 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113
E 9.66 9.97 10.28 0.380 0.393 0.405 θ1 5° 7° 9° 5° 7° 9°
E1 * 8.70 * * 0.343 * θ2 1° 3° 5° 1° 3° 5°
E2 9.80 10.00 10.20 0.386 0.394 0.402

Ruichips Semiconductor Co., Ltd

Rev. A– NOV., 2013 7 www.ruichips.com
 RU1H140R

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NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA

TEL: (86-755) 8311-5334

FAX: (86-755) 8311-4278
E-mail: Sales-SZ@ruichips.com

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