AMPLIFIERS 3.1. INTRODUCTION ‘The equivalent circuit fora transistor ean be drawn using simple approximations by rtainiag __ its important features, athe same time neglecting is les important features. These equiva. circuits wil be helpfil in analysing transistor ciruits easily. In this unt, small signal equivalent circuits of the transistor are derived ‘When signal level is too small, the nced for amplification arises to raise the signal leet ta desired level. For low input signals, the output swing of the active devices js also small and the deviees are considered to operat in the region. Hence for smal signl analysis, the active devs isreplaced by its small signal equivalent model, that, either the h-parametr or the remodel sll sigual operation isthat in which th ac input signal voltages and current are in the order of 10% ‘of Q point voltages and currents, 3.2. TWO-PORT DEICES AND HYBRID MODEL. BIT satwo-por devie in which one terminal is common o both the input and output por, ‘Thebehavior ofthe two-port networks analysed using the current and voltage parameters inpst and outpt ports, namely input current, input voltage, output current and output voltage. Out of these four parameters, two parameters are considered independent and the remaining tno parameters are dependent. The dependent parameters are expressed interns of the independent peranteters. Coser the two-port network shown in figure 3.1, The terminal behavior ofenytwo-prt network canbe specified bythe terminal voltages V, and V, at ports | and 2 respectively, arc arent, and, entering ports! and 2 respestivly Put (oeereag (me a f Tho ra ot ate hw mf eit 4+ wipdgat Fig, 4: Atwo port network a - eBlectronie Deviees & Circaite 2 ‘the input current is andthe output voltage V, are taken as independent varibles, the input voltage V, and output current i can be written as i Ve hy it ha Ve hy Vy. a hy, an, are defined ws follows, = output admittance with iaput port open circuited, [4] win : \ fe] = reverse voliage transfer ratio with input port open circuited forrward current gain with output port short circuited. (che dimensions of parameters are as follows: hy =D 4, ~ mos (©) Tig hy = dimensiones. is tin ine aT (ie) they are hybrid in nature, these parameters are called as hybrid Parameters.) : An alternative ubseript notation recommended by IEEE is commonly used input = output f= 21 = forward transfer = 12> reverse transfer Incase of transistors, another subseript (6, or) isadded to indicate thetype of configuration. Forexample. ci Anplifers an Ah, 4. * h,.™ output admittance in common-collector configiration, Based on the definition of hybrid parameters the mathematical model for two-port networks known as parameter model can be developed, as shown in Figure 3.2 V=hi thy, ae hi ‘| Fig, 82 Th hybrid model forthe two-port network ‘Thetnodelstisy these two cquations and itcanbe verified by writing Kirchof’'s voltage lav ‘equation in the input loop and KCL equation forthe output node, ‘The input circuit haveadependent voltage generator and the output circuit contains a dependent ‘current generator, 32.1 h-Parameter Model of BJT for CE Configuration In case of commen-emitter (CE) configuration, the emitter of the transistor is common to both input and output terminals. Base of the transistor isthe input terminal and collector ofthe ‘ransistor isthe ouput terminal. The variables ri Vg (= Vg dV (= Vy and Va ‘considered as independent variables. Vandi are considered as dependent viable, Va=F le Vo) fh Vo. Therefore, the equations for CE configuration can be written as Wahi th Ve ci Lehith, Ve ‘The I-parameter model for CE configuation is ‘The suber ‘e” indicates that the A-parameters are for CE configuration, 24, Input impedance when collectr-emitter terminals short circuitedElectronic Devices & Circuits M “ers voltage gain when base-emitter terminal s open created is shor circuited ard current gain when the collector-emitier te 1,,= output admittance when the base-emitter terminalis open circuited, Mle Fig, 3.3: Hybrid moda for transistor in CE configuration 2.22 h-Porometer Model af 81 for CB Configuration J ts ofthe itr is coro th nase of common se (CB) conigraton, he spt utagalcntnats nitrates tninptesedoletrofetrnssr sutton ts te qos oC cefgationcan be wrens VerhyicthaYe Lect Ye ‘The F-parameter model for CB configuration is Fig. 24: Hybrid mod for transistor In CB configures “The subscript ‘6° indicates that the f-parameters are for CB configuration. ‘h,~inut impedance when the colietor-bas terminal is sor-cireuited 2h, = reverse voltage gain when the emitter terminal is open-iruited 2h, = forward curt gun when the calletr-ese erninal is short-cireited fag" ouput sdinitance whes the emiter terminal i open-ciruited, Anplifers 3.2.3 h-Parameter model of BIT for CC Configuration {ncase ofommon-colleetor (CC) configuration, the collector of the ansistoris common to both input and output terminals. Base ofthe transistor isthe input terminal and emiter of the transistors the output terminal. Therefore, the equations for CC configuration ean be written vs Wahi th, Lag theVe ‘The parameter model for CC configuration i shown in Fig. 3.5. 2 ne a i ay , . | e f ‘ % we Se le a “de Fig: 35: Hybrid model for transistor in CC configuration ‘The subscript ‘c indicates that the I-perameters are for CC configuration. ‘4, input impedance when the emiiter