Chapter

32
Thyristors

Topics Covered in Chapter 32

32-1: Diacs
32-2: SCRs and Their Characteristics
32-3: Triacs
32-4: Unijunction Transistors

© 2007 The McGraw-Hill Companies, Inc. All rights reserved.

 32-1: Diacs
 A diac is a three-layer, two-junction semiconductor
device that has only two leads.
 A diac is also referred to as a bi-directional diode
thyristor because it can conduct current in either
direction.
 Diacs are often used in conjunction with triacs to
provide symmetrical triggering.

McGraw-Hill © 2007 The McGraw-Hill Companies, Inc. All rights reserved.

 32-1: Diacs

 Fig. 32-1 (a) shows the basic

construction of a diac, and Fig. 32-1
(b) shows the schematic symbol.

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Fig. 32-1
 32-2: SCRs and Their Characteristics

 The silicon controlled rectifier (SCR) is a four-layer

pnpn device with three leads, the anode, gate, and
cathode.
 An SCR will not conduct until the forward breakover
voltage is reached, even though its anode-cathode is
forward-biased.
 The gate current in an SCR controls the forward
breakover voltage.
 Once an SCR turns on, the gate loses all control.
 The only way to turn an SCR off is to reduce the anode
current below the holding current, IH.
 32-2: SCRs and Their Characteristics

 A silicon controlled rectifier

(SCR) is a four-layer pnpn
device.
 Fig. 32-3 (a) shows the basic
construction of an SCR, and Fig.
32-3 (b) shows the schematic
symbol.
 The SCR has three external
leads: the anode, cathode, and
gate.

Fig. 32-3
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 32-2: SCRs and Their Characteristics
 SCRs are frequently used to control the amount of power that is
delivered to a load.
 Fig. 32-5 (a) shows a circuit where an SCR is used to control the
amount of load current supplied to a lamp.

Fig. 32-5 (a)

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 32-2: SCRs and Their Characteristics

 Fig. 32-5 (b) shows the load

and SCR voltage waveforms
for R2 (in Fig. 32-5 a) set so
that the SCR fires when the
input signal reaches its peak
value at 90°.

Fig. 32-5 (b)

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 32-2: SCRs and Their Characteristics

 Fig. 32-5 (c) shows the

load and SCR voltage
waveforms for R2 (in Fig. 32-
5 a) set so that the SCR fires
when the input signal
reaches 45°.

Fig. 32-5 (c)

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 32-2: SCRs and Their Characteristics

 Fig. 32-5 (d) shows the

load and SCR voltage
waveforms for R2 (in Fig. 32-
5 a) set at its maximum
value so that the SCR fires
when the input signal is near
0°.

Fig. 32-5 (d)

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 32-3: Triacs
 A triac is a bi-directional thyristor used to control the
power in ac circuits.
 A triac has two leads designated MT1, and MT2 or A1
and A2.
 A triac has a gate lead which is used to control its
conduction.
 A triac is equivalent to two SCRs in parallel.
 32-3: Triacs

 The schematic symbol for

a triac is shown in Fig. 32-7
(a).
 There are two anode
terminals, A2 and A1, and a
gate lead.
 The triac is the equivalent
of two SCRs connected in
parallel, as shown in Fig.
32-7 (b).

Fig. 32-7
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 32-3: Triacs

A2 Gate Mode
 Fig. 32-8 shows the four operating
modes for a triac.
 When the anode 2 (A2) terminal is + + 1
positive, the triac can be turned on
with either a positive or negative
gate voltage. + − 2
 When the anode 2 (A2) terminal is
negative, the triac can be turned on
− + 3
with either a positive or negative
gate voltage.
− − 4

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig. 32-8
 32-3: Triacs

 Fig. 32-9 shows a very

effective way to provide a wide
range of control over load
current.
 R1-C1 and R2-C2 provide the
required phase shift necessary
for full control of the load current.

Fig. 32-9
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 32-4: Unijunction Transistors
 The unijunction transistor (UJT) is a three-terminal
semiconductor device that has only one p-n junction.
 The unijunction transistor (UJT) has two base leads,
B1 and B2 and an emitter (E) lead.
 The interbase resistance, RBB of a UJT is the
resistance of its n-type silicon bar.
 The ratio RB1/(RB1 + RB2) is called the intrinsic standoff
ratio, designated η.
 UJTs are used in conjunction with SCRs and Triacs to
control their conduction angle.
 32-4: Unijunction Transistors

 Construction of a UJT is shown

in Fig. 32-10 (a).
 A bar of n-type silicon (Si) is
placed on two separate pieces of
ceramic.
 Each piece of ceramic is bonded
by a gold film to each end of the n-
type Si bar, which forms a very
low resistance contact.
 each end of the Si bar is called a
base.

Fig. 32-10 (a)

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 32-4: Unijunction Transistors

 Negative resistance is
illustrated in the emitter
characteristic curve shown in
Fig. 32-12.

 Once VP is reached, the

emitter voltage, VE, decreases
as IE increases.

Fig. 32-12
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 32-4: Unijunction Transistors

 Fig. 32-13 shows

how a UJT can be
used as a relaxation
oscillator.
 Because the
voltage waveform,
VB1 is a sharp pulse
of short duration, it is
the ideal gate
triggering source for
either an SCR or
triac.
Fig. 32-13
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 32-4: Unijunction Transistors
 Fig. 32-14 shows how the firing of an SCR can be controlled by a UJT.

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Fig. 32-14